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公开(公告)号:US06185238B2
公开(公告)日:2001-02-06
申请号:US09026913
申请日:1998-02-20
IPC分类号: H01S319
CPC分类号: B82Y20/00 , H01L2224/16225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01S5/0213 , H01S5/0224 , H01S5/02272 , H01S5/2213 , H01S5/2219 , H01S5/3211 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要: In a nitride compound semiconductor laser including an active layer sandwiched by semiconductor layers of different conduction types on a sapphire substrate, layers of polyimide for current blocking and light confinement are formed on side surfaces of a mesa-type current confining structure with and under the p-side electrode. The laser ensures efficient, uniform carrier injection into the active layer, suppresses higher-order modes other than the fundamental transverse mode, and thereby promises a high reliability ensuring continuous pulsation under a low threshold current and a low operation voltage with low noise characteristics.
摘要翻译: 在蓝宝石衬底上包含由不同导电类型的半导体层夹持的有源层的氮化物化合物半导体激光器中,在p型和p型的台面型限流结构的侧面形成用于电流阻挡和光限制的聚酰亚胺层 侧电极。 激光器确保有源层中有效均匀的载流子注入,抑制基本横模以外的高次模,从而保证高可靠性,确保在低阈值电流和低噪声特性的低工作电压下连续脉动。
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公开(公告)号:US6125862A
公开(公告)日:2000-10-03
申请号:US942019
申请日:1997-10-01
摘要: Cleaning apparatus provide for the cleaning of a workpiece by first immersing the workpiece in a cleaning tank having a cleaning liquid therein for a predetermined period of time, removing the workpiece from the cleaning tank, moving the workpiece through air for a pre-selected period of time, and supplying the workpiece to a drying device which then dries the workpiece. As the workpiece is moved through the air, the workpiece may be vibrated, moved at an incline then a decline, and/or have air blasted at it, so that any liquid, e.g. rinsing solution, remaining thereon is caused to fall off, such occurring prior to the drying of the workpiece by the drying device.
摘要翻译: 清洁装置通过首先将工件浸入其中具有清洁液体的清洗槽中预定的时间段,从而将工件从清洗槽中移出,将工件移动通过空气预先选定的时间段 时间,并将工件供应到干燥装置,然后干燥工件。 当工件移动通过空气时,工件可以振动,以倾斜方式移动然后下降,和/或在其上进行空气喷射,使得任何液体,例如, 残留在其上的冲洗溶液脱落,这在干燥装置干燥工件之前发生。
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33.
公开(公告)号:US6121634A
公开(公告)日:2000-09-19
申请号:US27490
申请日:1998-02-20
申请人: Shinji Saito , Genichi Hatakoshi , Masaaki Onomura , Hidetoshi Fujimoto , Norio Iizuka , Chiharu Nozaki , Johji Nishio , Masayuki Ishikawa
发明人: Shinji Saito , Genichi Hatakoshi , Masaaki Onomura , Hidetoshi Fujimoto , Norio Iizuka , Chiharu Nozaki , Johji Nishio , Masayuki Ishikawa
CPC分类号: H01L33/32 , B82Y20/00 , H01L33/025 , H01S5/34333
摘要: In a nitride compound semiconductor light emitting device, an In.sub.0.3 Ga.sub.0.7 N/GaN multi-quantum well active layer 105 or an In.sub.0.1 Ga.sub.0.9 N/GaN multi-quantum well adjacent layer 104 is made as a saturable absorptive region so that self-pulsation occurs there. Thus, the device ensures self-pulsation with a high probability with a simple structure, and satisfies requirements for use as an optical head for reading data from an optical disc.
摘要翻译: 在氮化物化合物半导体发光器件中,将In0.3Ga0.7N / GaN多量子阱有源层105或In0.1Ga0.9N / GaN多量子阱相邻层104制成为可饱和吸收区域,使得自身 脉搏发生在那里。 因此,该装置以简单的结构以高概率确保自脉动,并且满足用作从光盘读取数据的光学头的要求。
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公开(公告)号:US6031858A
公开(公告)日:2000-02-29
申请号:US925764
申请日:1997-09-09
申请人: Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
发明人: Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
CPC分类号: H01S5/32341 , H01S2301/166 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2219 , H01S5/2231 , H01S5/4043 , H01S5/405 , H01S5/4087
摘要: A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.
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公开(公告)号:US6031310A
公开(公告)日:2000-02-29
申请号:US13856
申请日:1998-01-27
申请人: Masayuki Ishikawa , Shinichi Niwa
发明人: Masayuki Ishikawa , Shinichi Niwa
CPC分类号: H02K1/2786 , H02K15/03 , H02K21/22 , Y10T156/1038
摘要: A spindle motor comprises a rotor, which is rotatably supported by a stator, a rotor yoke, which is made up of a magnet fixed onto the rotor and a drive magnet, which is made of a bonded magnet which is adhesively fixed onto the rotor. A first metallic layer is formed onto a surface on the rotor yoke facing the drive magnet. A second metallic layer is formed on a surface of the drive magnet facing the rotor yoke.
摘要翻译: 主轴电动机包括由定子可旋转地支撑的转子,由固定在转子上的磁体和由固定在转子上的粘结磁体制成的驱动磁体构成的转子磁轭。 第一金属层形成在面向驱动磁体的转子磁轭的表面上。 第二金属层形成在面向转子轭的驱动磁体的表面上。
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36.
公开(公告)号:US6017807A
公开(公告)日:2000-01-25
申请号:US60068
申请日:1998-04-15
IPC分类号: H01L21/205 , H01L33/06 , H01L33/32 , H01L33/36 , H01L31/18
CPC分类号: H01L33/325 , H01L33/007
摘要: After p-type gallium nitride compound semiconductor layers, to which p-type impurity is added, are formed by virtue of chemical vapor deposition, the p-type gallium nitride compound semiconductor layers are thermally annealed at more than 400.degree. C. or more than 700.degree. C. while supplying a flow of an inert gas in parallel to a substrate surface at a predetermined flow rate or more. Otherwise, the p-type gallium nitride compound semiconductor layers are thermally annealed at more than 400.degree. C. or more than 700.degree. C. in an inert gas atmosphere having a predetermined pressure or more. According to the annealing process, the p-type impurity can be more effectively activated, so that p-type gallium nitride compound semiconductor layers which have fewer crystal defects, etc. and have lower resistivity can be formed.
摘要翻译: 在通过化学气相沉积形成p型杂质的p型氮化镓化合物半导体层之后,p型氮化镓系化合物半导体层在400℃以上热退火, 同时以预定的流速或更多的流量平行于衬底表面供应惰性气体流。 否则,在具有预定压力或更大压力的惰性气体气氛中,p型氮化镓化合物半导体层在大于400℃或高于700℃下热退火。 根据退火处理,可以更有效地激活p型杂质,从而可以形成具有较少的晶体缺陷等并且具有较低电阻率的p型氮化镓化合物半导体层。
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公开(公告)号:US5732098A
公开(公告)日:1998-03-24
申请号:US611460
申请日:1996-04-11
申请人: Katsuhiko Nisitani , Kazumi Unno , Masayuki Ishikawa , Ryo Saeki , Takafumi Nakamura , Masanobu Iwamoto
发明人: Katsuhiko Nisitani , Kazumi Unno , Masayuki Ishikawa , Ryo Saeki , Takafumi Nakamura , Masanobu Iwamoto
CPC分类号: H01L33/30 , H01L33/145
摘要: A semiconductor light emitting device has a double heterostructure. The device is composed of an active layer and clad layers that sandwich the active layer. At least one of the clad layers has a multilayer structure having at least two element layers. The Al mole fraction of an element layer, which is proximal to the active layer, of the multilayer structure is smaller than that of the other element layer thereof distal from the active layer. This arrangement improves the crystal quality of an interface between the active layer and the clad layer of multilayer structure and effectively confines carriers in the active layer.
摘要翻译: 半导体发光器件具有双异质结构。 该器件由有源层和夹层有源层的覆层组成。 至少一个包覆层具有至少两个元件层的多层结构。 多层结构中邻近活性层的元素层的Al摩尔分数小于远离活性层的其它元素层的Al摩尔分数。 这种布置提高了有源层和多层结构的包层之间的界面的晶体质量,并有效地限制了有源层中的载流子。
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公开(公告)号:US5696389A
公开(公告)日:1997-12-09
申请号:US402659
申请日:1995-03-13
申请人: Masayuki Ishikawa , Hideto Sugawara , Yukie Nishikawa , Masaaki Onomura , Shinji Saito , Peter James Parbrook , Genichi Hatakoshi , Koichi Nitta , John Rennie , Hiroaki Yoshida , Atsushi Kamata
发明人: Masayuki Ishikawa , Hideto Sugawara , Yukie Nishikawa , Masaaki Onomura , Shinji Saito , Peter James Parbrook , Genichi Hatakoshi , Koichi Nitta , John Rennie , Hiroaki Yoshida , Atsushi Kamata
IPC分类号: H01L27/15 , H01L33/06 , H01L33/08 , H01L33/10 , H01L33/16 , H01L33/20 , H01L33/28 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/56 , H01S5/042 , H01S5/183 , H01S5/40 , H01L29/41 , H01S3/19
CPC分类号: H01L33/38 , B82Y20/00 , H01L33/20 , H01S5/18341 , H01L27/153 , H01L33/0079 , H01L33/145 , H01L33/382 , H01S2301/203 , H01S5/0422 , H01S5/0425 , H01S5/1835 , H01S5/347 , H01S5/4087
摘要: A light-emitting semiconductor device comprising an n-type cladding layer provided on a surface of a substrate and having concentric first and second parts, a first electrode mounted on the first part of the n-type cladding layer, a p-type cladding layer provided above the surface of the substrate and surrounding the first electrode and the second part of the n-type cladding layer, and a second electrode provided on the p-type cladding layer.
摘要翻译: 一种发光半导体器件,包括设置在基板的表面上并具有同心的第一和第二部分的n型覆层,安装在n型覆层的第一部分上的第一电极,p型覆层 设置在基板的表面上并且包围n型包覆层的第一电极和第二部分,以及设置在p型覆层上的第二电极。
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公开(公告)号:US5518323A
公开(公告)日:1996-05-21
申请号:US91210
申请日:1993-07-14
申请人: Hiroshi Sakaino , Hideaki Ishimizu , Mitsuru Kishimoto , Noboru Ooishi , Masayuki Ishikawa , Chihiro Komori , Naoji Akutsu , Jiro Tanuma , Tadashi Kasai
发明人: Hiroshi Sakaino , Hideaki Ishimizu , Mitsuru Kishimoto , Noboru Ooishi , Masayuki Ishikawa , Chihiro Komori , Naoji Akutsu , Jiro Tanuma , Tadashi Kasai
IPC分类号: B41J2/30 , B41J11/20 , B41J25/308 , B41J29/46
CPC分类号: B41J25/3082 , B41J25/308
摘要: According to a method of adjusting a head gap, a wire dot head is set to a predetermined position of a reference head gap; a printing pattern for detecting printing time is printed by a plurality of pins; reference printing times of respective pins are detected. Next, a test printing is performed with test printing dots previously selected from printing data, and printing time of the test printing is detected. Then, the thickness of the printing media is calculated based on the reference printing time and the printing time of the test printing. At that time, a rule of thumb in which the difference of the printing time corresponds to the difference of the head gap, is used. Then, a shift amount of the wire dot head is calculated for setting the head gap to an optimum value according to the thickness of the printing media, and gap shifting mechanism shifts the wire dot head by the shift amount. This leads to highly accurate detection of the head gap and improves printing quality thereof.
摘要翻译: 根据调整头部间隙的方法,将丝点头设定在基准头间隙的预定位置; 用于检测打印时间的打印图案由多个针打印; 检测相应引脚的参考打印时间。 接下来,使用先前从打印数据中选择的测试打印点执行测试打印,并且检测打印测试打印时间。 然后,基于参考打印时间和测试打印的打印时间来计算打印介质的厚度。 此时,使用其中打印时间的差异对应于头部间隙的差异的经验法则。 然后,根据打印介质的厚度,计算出打印头间隙的最佳值的位移量,并且间隙移动机构使丝网头移动移位量。 这导致头间隙的高精度检测并提高其打印质量。
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公开(公告)号:US5160447A
公开(公告)日:1992-11-03
申请号:US313612
申请日:1989-02-21
IPC分类号: C04B35/26 , C04B35/634 , H01F1/26 , H01F1/37 , H01F3/08 , H02K1/02 , H02K41/035
CPC分类号: C04B35/63424 , C04B35/26 , C04B35/634 , C04B35/63452 , C04B35/63472 , H01F1/26 , H01F1/37 , H01F3/08 , H02K1/02 , H02K41/0354 , Y10S264/54
摘要: A compressed powder magnetic corer is disclosed in which the mixing ratio (vol %) of the parts occupied by binder resin, ferromagnetic powder and void formed therebetween is set for a specified value so as to obtain desired magnetic characteristics.
摘要翻译: 公开了一种压缩粉末磁芯,其中由粘合剂树脂,铁磁性粉末和其间形成的空隙所占的部分的混合比(体积%)设定为规定值,以获得所需的磁特性。
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