公开(公告)号：US06686071B2

公开(公告)日：2004-02-03

申请号：US09873753

申请日：2001-06-04

申请人： Hiroshi Sakakima ,  Hideaki Adachi ,  Mitsuo Satomi ,  Yasuhiro Kawawake ,  Yasunari Sugita ,  Kenji Iijima

发明人： Hiroshi Sakakima ,  Hideaki Adachi ,  Mitsuo Satomi ,  Yasuhiro Kawawake ,  Yasunari Sugita ,  Kenji Iijima

IPC分类号： G11B566

CPC分类号： G11B5/66 ,  G11B5/82 ,  G11B2005/0002 ,  G11B2005/001 ,  Y10S428/90 ,  Y10T428/115 ,  Y10T428/12465

摘要： A magnetic recording medium includes a magnetic film for signal recording and a film containing M2Oy as a main component that is magnetically exchange-coupled to the magnetic film to increase the effective V and Ku of the magnetic film and to suppress thermal fluctuation. Herein, M is at least one element selected from Fe, Co, Ni, alkaline earth elements, Y, lanthanoids and Bi and includes at least one selected from Fe, Co and Ni as an essential element, and y is a value satisfying 2.8

摘要翻译： 磁记录介质包括用于信号记录的磁性膜和含有M 2 O y作为主要成分的膜，该膜与磁性膜磁交换耦合，以增加磁性膜的有效V和Ku并抑制热波动。 这里，M是选自Fe，Co，Ni，碱土金属元素，Y，镧系元素和Bi中的至少一种元素，并且包括选自Fe，Co和Ni中的至少一种作为必需元素，y是满足2.8 < Y <3.2。

公开(公告)号：US06562486B2

公开(公告)日：2003-05-13

申请号：US09834716

申请日：2001-04-13

申请人： Hiroshi Sakakima ,  Eiichi Hirota ,  Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita

发明人： Hiroshi Sakakima ,  Eiichi Hirota ,  Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3948 ,  G11B5/3954 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/32 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121

摘要： An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8

摘要翻译： 本发明的交换耦合膜包括铁磁层和钉扎层，该钉扎层与铁磁层接触以固定铁磁层的磁化方向，钉扎层包括（AB）2Ox层，其中：O表示 氧原子; 2.8

公开(公告)号：US06256222B1

公开(公告)日：2001-07-03

申请号：US09612805

申请日：2000-07-10

申请人： Hiroshi Sakakima ,  Yousuke Irie ,  Mitsuo Satomi ,  Yasuhiro Kawawake

发明人： Hiroshi Sakakima ,  Yousuke Irie ,  Mitsuo Satomi ,  Yasuhiro Kawawake

IPC分类号： G11C1100

CPC分类号： H03F7/02 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3925 ,  G11B2005/3996 ,  G11C11/16 ,  G11C11/5607 ,  G11C2211/5616 ,  H01L27/222 ,  H01L43/10

摘要： A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.

摘要翻译： 本发明的磁阻效应器件包括：衬底; 以及形成在基板上的多层结构。 多层结构包括硬磁膜，软磁膜和用于从硬磁膜分离硬磁膜的非磁性金属膜。 硬磁性膜的磁化曲线具有良好的正方形特征，硬磁性膜的磁化容易轴的方向基本上与要检测的磁场的方向一致。

公开(公告)号：US06198610B1

公开(公告)日：2001-03-06

申请号：US09477989

申请日：2000-01-05

申请人： Yasuhiro Kawawake ,  Mitsuo Satomi ,  Hiroshi Sakakima

发明人： Yasuhiro Kawawake ,  Mitsuo Satomi ,  Hiroshi Sakakima

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3268 ,  H01L43/08

摘要： A magnetoresistive device of the present invention includes: a soft magnetic layer; a hard magnetic layer; a non-magnetic layer formed between the soft magnetic layer and the hard magnetic layer; and an interface magnetic layer, provided at an interface between the soft magnetic layer and the non-magnetic layer, for enhancing magnetic scattering, wherein the soft magnetic layer includes an amorphous structure.

摘要翻译： 本发明的磁阻装置包括：软磁性层; 硬磁层; 形成在软磁性层和硬磁性层之间的非磁性层; 以及设置在所述软磁性层和所述非磁性层之间的界面处的用于增强磁散射的界面磁性层，其中所述软磁性层包括无定形结构。

公开(公告)号：US6077618A

公开(公告)日：2000-06-20

申请号：US983514

申请日：1998-01-28

申请人： Hiroshi Sakakima ,  Mitsuo Satomi ,  Shinji Nagamachi ,  Masahiro Ueda

发明人： Hiroshi Sakakima ,  Mitsuo Satomi ,  Shinji Nagamachi ,  Masahiro Ueda

IPC分类号： G11B5/48 ,  G11C11/15 ,  H01L43/08 ,  G11B5/39

CPC分类号： G11B5/48 ,  G11C11/15 ,  H01L43/08 ,  Y10T428/1143

摘要： A magnetoresistance effect element, a head of the magnetoresistance effect type and a memory element in each of which a larger MR change can be acquired in a smaller magnetic field, and a method of producing the magnetoresistance effect element. In a magnetoresistance effect element, the basic structure comprises a lamination body of a magnetic layer/a nonmagnetic insulating layer/a magnetic layer, and a nonmagnetic insulating layer has, at an exposed part thereof, a conductive portion sufficiently smaller than the contact portion of the nonmagnetic insulating layer with respect to the magnetic layers, the conductive portion electrically connecting the magnetic layer to each other. Electrode lead portions are disposed at the upper and lower magnetic layers. In the lamination body, there may be formed, in the nonmagnetic insulating layer, a column-like conductive portion which is sufficiently smaller than the contact portion of the nonmagnetic insulating layer with respect to the magnetic layers. The nonmagnetic insulting layer may be formed of an oxide or nitride of a conductive material, and the conductive portion may be lower in oxide concentration or nitride concentration than the nonmagnetic insulating layer. Further, the basic structure may include a lamination body consisting of a conductive magnetization-reversal restraining layer/a magnetic layer/a nonmagnetic insulating layer/a magnetic layer in which the conductive magnetization-reversal restraining layer is formed on the surface of one of the magnetic layers for restraining the one magnetic layer from being reversed in magnetization direction.

摘要翻译： PCT No.PCT / JP97 / 01830 Sec。 371日期1998年1月28日 102（e）日期1998年1月28日PCT提交1997年5月28日PCT公布。 公开号WO97 / 45883 日期1997年12月4日磁阻效应元件，磁阻效应类型的磁头和存储元件，其中每个磁能效应元件可以在较小的磁场中获得较大的MR变化，以及制造磁阻效应元件的方法。 在磁电阻效应元件中，基本结构包括磁性层/非磁性绝缘层/磁性层的层压体，非磁性绝缘层在其暴露部分具有足够小于 所述非磁性绝缘层相对于所述磁性层，所述导电部将所述磁性层彼此电连接。 电极引线部设置在上下磁性层。 在层叠体中，可以在非磁性绝缘层中形成比非磁性绝缘层相对于磁性层的接触部充分小的列状导体部。 非磁性绝缘层可以由导电材料的氧化物或氮化物形成，并且导电部分的氧化物浓度或氮化物浓度可以低于非磁性绝缘层。 此外，基本结构可以包括由导电磁化反转抑制层/磁性层/非磁性绝缘层/磁性层构成的层叠体，其中导电磁化反转抑制层形成在其中的一个的表面上 用于限制一个磁性层在磁化方向上反转的磁性层。

公开(公告)号：US06005798A

公开(公告)日：1999-12-21

申请号：US120690

申请日：1998-07-22

申请人： Hiroshi Sakakima ,  Yousuke Irie ,  Mitsuo Satomi ,  Yasuhiro Kawawake

发明人： Hiroshi Sakakima ,  Yousuke Irie ,  Mitsuo Satomi ,  Yasuhiro Kawawake

IPC分类号： G01R33/09 ,  G06K19/06 ,  G11B5/39 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H03F7/02 ,  H03F15/00 ,  G11C11/00

CPC分类号： H03F7/02 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01F10/3281 ,  H01L27/222 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/3925 ,  G11C2211/5616

摘要： A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.

公开(公告)号：US5637392A

公开(公告)日：1997-06-10

申请号：US31726

申请日：1993-03-15

申请人： Hiroshi Sakakima ,  Mitsuo Satomi ,  Hiroshi Takeuchi

发明人： Hiroshi Sakakima ,  Mitsuo Satomi ,  Hiroshi Takeuchi

IPC分类号： G11B5/39 ,  G01R33/09 ,  H01L43/08 ,  B32B5/16 ,  G11B5/66

CPC分类号： B82Y25/00 ,  G01R33/093 ,  Y10S428/90 ,  Y10T428/1129 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12917 ,  Y10T428/12931 ,  Y10T428/265

摘要： Disclosed is a magneto-resistance effect element indicating a larger magneto-resistance effect at room temperature under impression of low magnetic field is obtained with the construction wherein the characteristics of artificial metallic lattice membrane are exploited.

公开(公告)号：US4578728A

公开(公告)日：1986-03-25

申请号：US445721

申请日：1982-11-30

申请人： Hiroshi Sakakima ,  Mitsuo Satomi ,  Yukihiro Yanagiuchi ,  Harufumi Senno

发明人： Hiroshi Sakakima ,  Mitsuo Satomi ,  Yukihiro Yanagiuchi ,  Harufumi Senno

IPC分类号： G11B5/127 ,  G11B5/31

CPC分类号： G11B5/127 ,  G11B5/3106

摘要： The invention provides a magnetic head having a core which includes a thin amorphous alloy film having a composition of Co.sub.a M.sub.b T.sub.c X.sub.d, for 70.ltoreq.a.ltoreq.95, 0.ltoreq.b.ltoreq.20, 3.ltoreq.c.ltoreq.20, 0.ltoreq.d

摘要翻译： 本发明提供了一种磁头，其具有芯，其包括具有CoaMbTcXd组成的薄的非晶态合金膜，其中70≤i≤95,0≤b≤20，3≤c< = 20,0

公开(公告)号：US07079361B2

公开(公告)日：2006-07-18

申请号：US11060028

申请日：2005-02-16

申请人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

发明人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

IPC分类号： G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3231 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T428/115

摘要： The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2cX3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.

摘要翻译： 本发明提供了一种磁阻（MR）元件，它具有优异的MR比和热稳定性，并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层， / SUB>。 这里，M是选自Fe，Co和Ni中的至少一种，X由X 1表示，X 2， （X 1以上）选自Cu，Ru，Rh，Pd，Ag，Os，Ir中的至少一种， Pt和Au，X 2是选自Al，Sc，Ti，V，Cr，Mn，Ga，Ge，Y，Zr，Nb，Mo，Hf，Ta，W，Re中的至少一种 ，Zn和镧系元素，X 3是选自Si，B，C，N，O，P和S中的至少一种），a，b，c和d满足0.05 < a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20，a = b + c + d。

公开(公告)号：US06954372B2

公开(公告)日：2005-10-11

申请号：US10250811

申请日：2002-01-18

申请人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita

发明人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/66 ,  G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F10/3213 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/222 ,  H01L29/66984

摘要： A magnetic memory device that includes a magnetoresistive element, a conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element, and at least one ferromagnetic member through which the magnetic flux passes. The ferromagnetic member forms a magnetic gap at a position where the magnetic flux passes through the magnetoresistive element. A length of the magnetoresistive element that is measured in a direction parallel to the magnetic gap is less than or equal to twice the length of the magnetic gap. A length of a path traced by the magnetic flux in the ferromagnetic member is less than or equal to 1.0 μm. The length of the path is also greater than or equal to five times the thickness of the ferromagnetic member and/or is greater than or equal to a length of the ferromagnetic member in the direction of the drawing of the conductive wire divided by five.

摘要翻译： 一种磁存储器件，包括磁阻元件，用于产生改变磁阻元件的电阻值的磁通的导线以及磁通通过的至少一个铁磁部件。 铁磁构件在磁通量通过磁阻元件的位置处形成磁隙。 在与磁隙平行的方向上测量的磁阻元件的长度小于或等于磁隙长度的两倍。 由铁磁部件中的磁通量追踪的路径的长度小于或等于1.0μm。 路径的长度也大于或等于铁磁构件的厚度的五倍和/或大于或等于铁磁构件沿导线方向除以五的长度。