公开(公告)号：US20200168466A1

公开(公告)日：2020-05-28

申请号：US16744022

申请日：2020-01-15

Applicant: Lam Research Corporation

Inventor： Nagraj Shankar ,  Kapu Sirish Reddy ,  Jon Henri ,  Pengyi Zhang ,  Elham Mohimi ,  Bhavin Jariwala ,  Arpan Pravin Mahorowala

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/67 ,  C23C16/455 ,  C23C16/40

Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

公开(公告)号：US20200066607A1

公开(公告)日：2020-02-27

申请号：US16503270

申请日：2019-07-03

Applicant: Lam Research Corporation

Inventor： Seshasayee Varadarajan ,  Aaron R. Fellis ,  Andrew John McKerrow ,  James Samuel Sims ,  Ramesh Chandrasekharan ,  Jon Henri

IPC: H01L21/66 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677 ,  H01L21/02 ,  C23C16/50 ,  C23C16/52

Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).

公开(公告)号：US20170117134A1

公开(公告)日：2017-04-27

申请号：US15399637

申请日：2017-01-05

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Bart J. van Schravendijk ,  Shane Tang ,  Karl F. Leeser

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/52 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/045 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0262

Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.

公开(公告)号：US09589790B2

公开(公告)日：2017-03-07

申请号：US14552245

申请日：2014-11-24

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Shane Tang ,  James S. Sims

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40

CPC classification number: H01L21/0217 ,  C23C16/303 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45542 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation.

Abstract translation: 本文提供了通过暴露于无卤素，不含N-H键的无碳氧化硅和前体如乙硅烷，使用原子层沉积来沉积共形氮化硅膜的方法，清洗前体，暴露于 氮等离子体，以及在低温下清除等离子体。 使用高频等离子体，例如频率至少为13.56MHz或至少27MHz的等离子体。 方法产生适合于在半导体器件中沉积的基本上纯的共形氮化硅膜，例如在沟槽或特征中，或用于存储器封装。

公开(公告)号：US20160293398A1

公开(公告)日：2016-10-06

申请号：US14678736

申请日：2015-04-03

Applicant: Lam Research Corporation

Inventor： Michal Danek ,  Jon Henri ,  Shane Tang

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  C23C16/52 ,  C23C16/455 ,  C23C16/505

CPC classification number: H01L21/0228 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32091 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/0234 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/67207

Abstract: Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.

Abstract translation: 提供了在原子层沉积期间使用含卤素蚀刻剂沉积保形膜的方法。 方法包括在将衬底暴露于第一前体之前将衬底暴露于含卤素蚀刻剂如三氟化氮，并将衬底暴露于第二等离子体活化反应物。 可以沉积的保形膜的实例包括含硅膜和含金属膜。 还提供了相关装置。

公开(公告)号：US20160148806A1

公开(公告)日：2016-05-26

申请号：US14552245

申请日：2014-11-24

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Shane Tang ,  James S. Sims

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  C23C16/303 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45542 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation.

Abstract translation: 本文提供了通过暴露于无卤素，不含N-H键的无碳氧化硅和前体如乙硅烷，使用原子层沉积来沉积共形氮化硅膜的方法，清洗前体，暴露于 氮等离子体，以及在低温下清除等离子体。 使用高频等离子体，例如频率至少为13.56MHz或至少27MHz的等离子体。 方法产生适合于在半导体器件中沉积的基本上纯的共形氮化硅膜，例如在沟槽或特征中，或用于存储器封装。

公开(公告)号：US20160148800A1

公开(公告)日：2016-05-26

申请号：US14552011

申请日：2014-11-24

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Bart J. van Schravendijk ,  Shane Tang ,  Karl F. Leeser

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/045 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0262

Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.

Abstract translation: 提供了选择性地抑制通过原子层沉积沉积的含硅膜沉积的方法。 选择性抑制包括将含硅前体的吸附层暴露于含氢抑制剂，并且在一些情况下，在将吸附层暴露于第二反应物之前。 可以用等离子体进行暴露于含氢抑制剂，并且方法适合于选择性抑制含硅薄膜的热或等离子体增强的原子层沉积。

公开(公告)号：US09076646B2

公开(公告)日：2015-07-07

申请号：US14144107

申请日：2013-12-30

Applicant: Lam Research Corporation

Inventor： James S. Sims ,  Jon Henri ,  Kathryn M. Kelchner ,  Sathish Babu S. V. Janjam ,  Shane Tang

IPC: H01L21/02 ,  C23C16/515 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/67 ,  H01L21/762 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/515 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76829

Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.

Abstract translation: 本文的实施例集中于使用脉冲等离子体的等离子体增强原子层沉积（PEALD）工艺。 虽然常规PEALD工艺在等离子体曝光/转换操作期间使用连续波等离子体，但是本文的实施例在此操作期间利用脉冲等离子体来实现具有高质量侧壁的膜。 因为传统的PEALD技术导致在特征的底部和顶部具有高质量的膜，而在侧壁上具有低质量，因此在所公开的方法中增加的侧壁质量对应于整体上在质量上更均匀的膜， 常规连续波等离子体技术。