Abstract:
Implementations of Data Bus Inversion (DBI) techniques within a memory system are disclosed. In one embodiment, a set of random access memory (RAM) integrated circuits (ICs) is separated from a logic system by a bus. The logic system can contain many of the logic functions traditionally performed on conventional RAM ICs, and accordingly the RAM ICs can be modified to not include such logic functions. The logic system, which can be a logic integrated circuit intervening between the modified RAM ICs and a traditional memory controller, additionally contains DBI encoding and decoding circuitry. In such a system, data is DBI encoded and at least one DBI bit issued when writing to the modified RAM ICs. The RAM ICs in turn store the DBI bit(s) with the encoded data. When the encoded data is read from the modified RAM ICs, it is transmitted across the bus in its encoded state along with the DBI bit(s). The logic integrated circuit then decodes the data using the DBI bit(s) to return it to its original state.
Abstract:
Methods and apparatuses for providing multi-level encoded signals are disclosed. An apparatus may include an encoding circuit and a multi-level encoder. The encoding circuit may be configured to receive data and provide encoded data based, at least in part on the data. The multi-level encoder may be coupled to the encoding circuit and configured to receive the encoded data. The multi-level encoder may be further configured to provide the encoded data to a bus as multi-level signal responsive, at least in part, to receipt of the encoded data.
Abstract:
Apparatuses and methods for driving input data signals onto signal lines as output data signals are disclosed. An example apparatus includes a detection circuit, a driver adjust circuit, and a data driver. The detection circuit is configured to detect a characteristic(s) of a group of input data signals to be driven onto adjacent signal lines. A characteristic could be, for example, a particular combination of logic levels and/or transitions for the group of input data signals. The driver adjust circuit is configured to provide a driver adjustment signal based at least in part on a detection signal, that is provided by the detection circuit. A data driver is configured to drive a respective one of the group of input data signals as a respective one of the output data signals, wherein the data driver is adjusted based at least in part on the driver adjustment signal.
Abstract:
A decision counter circuit is used in a self-adaptation circuit to apply digital averaging to input signals to obtain adaptive settings of circuit parameters for a memory chip of a memory device during the operation. Individual adaptive settings of the parameters (e.g., impedance, capacitance, equalization parameters) during operation are obtained for each of the memory chips in the memory device. The self-adaptation enables equalization adjustment across temperature and voltage drift.
Abstract:
Systems and methods include self-training an equalizer of a semiconductor device using the semiconductor device. The semiconductor device receives an indication of a condition for re-training of the equalizer. The semiconductor device operates the equalizer based on trained values derived during the self-training. The semiconductor device also determines that the condition has been met, and in response, the semiconductor device re-trains the equalizer without invocation of re-training by a host device coupled to the semiconductor device.
Abstract:
Methods, apparatuses, and systems related to an apparatus for managing on-die inter-symbol interference (ISI) are described. The apparatus may include (1) a single communication path with a set of drivers and (2) an on-die ISI prevention circuit coupled to the communication path in parallel. The single communication path may be used to propagate a slower speed signal and a higher speed signal. The on-die ISI prevention circuit may be configured to adjust the propagated signal for one of the speeds to reduce the ISI in the communicated signal.
Abstract:
Systems may include a central processing unit (CPU), a graphics processing unit (GPU), or a field programmable gate array (FPGA), or any combination thereof. At least one memory device may be connected to the CPU, the GPU, or the FPGA. The memory device(s) may include a device substrate including a microelectronic device and bond pads coupled with an active surface of the device substrate. A package substrate may be secured to the device substrate, the package substrate configured to route signals to and from the bond pads. A ball grid array may be supported on the package substrate. Each ball of the ball grid array positioned and configured to carry one of a high-bandwidth data signal or a high-frequency clock signal may be located only diagonally adjacent to any other balls of the ball grid array configured to carry another of a high-bandwidth data signal or a high-frequency clock signal.
Abstract:
Described apparatuses and methods enable communication between a host device and a memory device to establish relative delays between different data lines. If data signals propagate along a bus with the same timing, simultaneous switching output (SSO) and crosstalk can adversely impact channel timing budget parameters. An example system includes an interconnect having multiple data lines that couple the host device to the memory device. In example operations, the host device can transmit to the memory device a command indicative of a phase offset between two or more data lines of the multiple data lines. The memory device can implement the command by transmitting or receiving signals via the interconnect with different relative phase offsets between data lines. The host device (e.g., a memory controller) can determine appropriate offsets for a given apparatus. Lengths of the offsets can vary. Further, a system can activate the phase offsets based on frequency.
Abstract:
Memory devices, systems including memory devices, and methods of operating memory devices are described, in which clock trees can be separately optimized to provide a coarse alignment between a clock signal and a command/address signal (and/or a chip select signal or other control signal), and/or in which individual memory devices can be isolated for fine-tuning of device-specific alignment between a clock signal and a command/address signal (and/or a chip select signal or other control signal). Moreover, individual memory devices can be isolated for fine-tuning of device-specific equalization of a command/address signal (and/or a chip select signal or other control signal).
Abstract:
Apparatuses, such as semiconductor device packages, may include, for example, a device substrate including a semiconductor material and bond pads coupled with an active surface of the device substrate. A package substrate may be secured to the device substrate, the package substrate configured to route signals to and from the bond pads. A ball grid array may be supported on, and electrically connected to, the package substrate. Each ball of the ball grid array positioned and configured to carry a clock signal or a strobe signal may be located in a central column of the ball grid array.