公开(公告)号：US20060196538A1

公开(公告)日：2006-09-07

申请号：US11416871

申请日：2006-05-02

Applicant: David Kubista ,  Trung Doan ,  Lyle Breiner ,  Ronald Weimer ,  Kevin Beaman ,  Er-Xuan Ping ,  Lingyi Zheng ,  Cem Basceri

Inventor： David Kubista ,  Trung Doan ,  Lyle Breiner ,  Ronald Weimer ,  Kevin Beaman ,  Er-Xuan Ping ,  Lingyi Zheng ,  Cem Basceri

IPC: F17D1/16 ,  C23C16/00

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  Y10T137/0396

Abstract: Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers are disclosed herein. In one embodiment, the system includes a gas phase reaction chamber, a first exhaust line coupled to the reaction chamber, first and second traps each in fluid communication with the first exhaust line, and a vacuum pump coupled to the first exhaust line to remove gases from the reaction chamber. The first and second traps are operable independently to individually and/or jointly collect byproducts from the reaction chamber. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract translation: 用于在反应室中将材料沉积到工件上的系统以及用于从反应室除去副产物的方法在此公开。 在一个实施例中，系统包括气相反应室，连接到反应室的第一排气管线，与第一排气管线流体连通的第一和第二阱，以及耦合到第一排气管线以除去气体的真空泵 从反应室。 第一和第二捕集器独立地可操作地单独地和/或共同地从反应室收集副产物。 要强调的是提供本摘要以符合要求摘要的规则。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

公开(公告)号：US20060175673A1

公开(公告)日：2006-08-10

申请号：US11389369

申请日：2006-03-24

Applicant: Don Powell ,  Garry Mercaldi ,  Ronald Weimer

Inventor： Don Powell ,  Garry Mercaldi ,  Ronald Weimer

IPC: H01L29/94

CPC classification number: H01L29/513 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/28035 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/3125 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/3185 ,  H01L28/57 ,  H01L29/518 ,  H01L2924/19041

Abstract: Systems and devices are disclosed utilizing a silicon-containing barrier layer. A semiconductor device is disclosed and includes a substrate, a gate oxide, a silicon-containing barrier layer and a gate electrode. The gate oxide is formed over the substrate. The silicon-containing barrier layer is formed over the gate oxide by causing silicon atoms of a precursor layer react with a reactive agent. The gate electrode is formed over the silicon-containing barrier layer.

公开(公告)号：US20060121689A1

公开(公告)日：2006-06-08

申请号：US11327118

申请日：2006-01-06

Applicant: Cem Basceri ,  Trung Doan ,  Ronald Weimer ,  Kevin Beaman ,  Lyle Breiner ,  Lingyi Zheng ,  Er-Xuan Ping ,  Demetrius Sarigiannis ,  David Kubista

Inventor： Cem Basceri ,  Trung Doan ,  Ronald Weimer ,  Kevin Beaman ,  Lyle Breiner ,  Lingyi Zheng ,  Er-Xuan Ping ,  Demetrius Sarigiannis ,  David Kubista

IPC: H01L21/76 ,  H01L21/20 ,  H01L21/302 ,  H01L21/31

CPC classification number: C23C16/45527 ,  C23C16/34 ,  C23C16/45546

Abstract: The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure within the enclosure is reduced toga second enclosure pressure while introducing a purge gas at a first flow rate. The second enclosure pressure may approach or be equal to a steady-state base pressure of the processing system at the first flow rate. After reducing the pressure, the purge gas flow may be increased to a second flow rate and the enclosure pressure may be increased to a third enclosure pressure. Thereafter, a flow of a second precursor gas may be introduced with a pressure within the enclosure at a fourth enclosure pressure; the third enclosure pressure is desirably within about 10 percent of the fourth enclosure pressure.

Abstract translation: 本公开提供了用于在批次的微特征工件上沉积材料中有用的方法和装置。 一个实施方案提供了一种方法，其中一定量的第一前体气体以第一封壳压力被引入外壳。 外壳内的压力降低到第二封闭压力，同时以第一流速引入净化气体。 第二外壳压力可接近或等于处理系统在第一流量下的稳态基础压力。 在降低压力之后，吹扫气体流量可以增加到第二流量，并且外壳压力可以增加到第三外壳压力。 此后，第二前体气体的流动可以在第四封闭压力下以外壳内的压力引入; 第三外壳压力理想地在第四外壳压力的约10％内。

公开(公告)号：US20060009028A1

公开(公告)日：2006-01-12

申请号：US11216914

申请日：2005-08-31

Applicant: Ronald Weimer ,  John Moore

Inventor： Ronald Weimer ,  John Moore

IPC: H01L21/4763

CPC classification number: H01L21/0276 ,  H01L21/02126 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/31116 ,  H01L21/3145 ,  H01L21/3146 ,  H01L21/3148 ,  H01L21/31604 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76897 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/10888 ,  H01L28/91 ,  Y10S257/90 ,  Y10S438/97

Abstract: The invention pertains to films comprising silicon, oxygen and carbon and the use of the films in integrated circuit technology, such as capacitor constructions, DRAM constructions, semiconductive material assemblies, etching processes, and methods for forming capacitors, DRAMs and semiconductive material assemblies. One particular disclosed film is an anti-reflective coating, and a method of formation thereof.

Abstract translation: 本发明涉及包含硅，氧和碳的薄膜以及集成电路技术中的薄膜的使用，例如电容器结构，DRAM结构，半导体材料组件，蚀刻工艺以及用于形成电容器，DRAM和半导体材料组件的方法。 一种特别公开的膜是抗反射涂层及其形成方法。

公开(公告)号：US20050275044A1

公开(公告)日：2005-12-15

申请号：US11199634

申请日：2005-08-09

Applicant: Don Powell ,  Garry Mercaldi ,  Ronald Weimer

Inventor： Don Powell ,  Garry Mercaldi ,  Ronald Weimer

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L29/40 ,  H01L29/51 ,  H01L29/94

CPC classification number: H01L29/513 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/28035 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/3125 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/3185 ,  H01L28/57 ,  H01L29/518 ,  H01L2924/19041

Abstract: Systems and devices are disclosed utilizing a silicon-containing barrier layer. A semiconductor device is disclosed and includes a substrate, a gate oxide, a silicon-containing barrier layer and a gate electrode. The gate oxide is formed over the substrate. The silicon-containing barrier layer is formed over the gate oxide by causing silicon atoms of a precursor layer react with a reactive agent. The gate electrode is formed over the silicon-containing barrier layer.

Abstract translation: 公开了利用含硅阻挡层的系统和装置。 公开了半导体器件，并且包括衬底，栅极氧化物，含硅势垒层和栅电极。 栅极氧化物形成在衬底上。 通过使前体层的硅原子与反应剂反应，在栅极氧化物上形成含硅势垒层。 栅电极形成在含硅阻挡层的上方。

公开(公告)号：US20050217575A1

公开(公告)日：2005-10-06

申请号：US10814573

申请日：2004-03-31

Applicant: Dan Gealy ,  Ronald Weimer

Inventor： Dan Gealy ,  Ronald Weimer

IPC: C23C16/00 ,  C23C16/448

CPC classification number: C23C16/4481 ,  Y10S261/65

Abstract: Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers are disclosed herein. In one embodiment, an ampoule includes a vessel having an interior volume configured to receive a precursor with a headspace above the precursor. The ampoule further includes a carrier gas inlet for flowing carrier gas into the vessel, a conduit having an opening in the precursor and an outlet in the headspace, and a means for flowing precursor through the conduit and into the headspace to increase the surface area of the precursor exposed to the carrier gas.

Abstract translation: 本文公开了用于产生反应气体的安培瓶和用于将物质沉积在反应室中的微特征工件上的系统。 在一个实施例中，安瓿包括具有内部容积的容器，该内部容积被配置为接收具有在前体上方的顶部空间的前体。 安瓿还包括用于将载气流入容器的载气入口，具有前体中的开口和顶部空间中的出口的导管，以及用于使前体流过导管并进入顶部空间以增加表面积的装置 前体暴露于载气。

公开(公告)号：US20050126489A1

公开(公告)日：2005-06-16

申请号：US10733523

申请日：2003-12-10

Applicant: Kevin Beaman ,  Trung Doan ,  Lyle Breiner ,  Ronald Weimer ,  Er-Xuan Ping ,  David Kubista ,  Cem Basceri ,  Lingyi Zheng

Inventor： Kevin Beaman ,  Trung Doan ,  Lyle Breiner ,  Ronald Weimer ,  Er-Xuan Ping ,  David Kubista ,  Cem Basceri ,  Lingyi Zheng

IPC: C23C16/46 ,  C23C16/00 ,  B05D1/00

CPC classification number: C23C16/00 ,  C23C16/46

Abstract: The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.

Abstract translation: 本公开提供了用于控制温度的方法和系统。 该方法在沉积工艺中控制温度，例如通过CVD沉积热反射材料方面具有特别的用途。 一个示例性实施例提供了一种方法，其涉及监测沉积室外的第一温度和沉积室内的第二温度。 通过（a）将控制温度与目标温度进行比较，可以根据斜坡分布来增加沉积室中的内部温度，以及（b）响应于比较的结果，选择性地将热量输送到沉积室。 目标温度可以根据斜坡分布来确定，但是一个实现中的控制温度在第一温度和第二温度之间交替。

公开(公告)号：US20050039686A1

公开(公告)日：2005-02-24

申请号：US10646607

申请日：2003-08-21

Applicant: Lingyi Zheng ,  Trung Doan ,  Lyle Breiner ,  Er-Xuan Ping ,  Ronald Weimer ,  David Kubista ,  Kevin Beaman ,  Cem Basceri

Inventor： Lingyi Zheng ,  Trung Doan ,  Lyle Breiner ,  Er-Xuan Ping ,  Ronald Weimer ,  David Kubista ,  Kevin Beaman ,  Cem Basceri

IPC: C23C16/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/4583 ,  C23C16/45546 ,  C23C16/45578 ,  Y10S206/832

Abstract: The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.

Abstract translation: 本公开描述了用于处理微特征工件的装置和方法，例如通过使用原子层沉积在微电子半导体上沉积材料。 这些设备中的一些包括微型工件保持器，其包括气体分配器。 一个示例性实施例提供了适于保持多个微特征工件的微特征工件保持器。 该工件保持器包括多个工件支撑件和气体分配器。 工件支撑件适于以间隔的关系支撑多个微特征工件以限定与每个微特征工件的表面相邻的工艺空间。 气体分配器包括入口和多个出口，其中每个出口被定位成将处理气体流引导到处理空间中的一个中。

公开(公告)号：US20050032393A1

公开(公告)日：2005-02-10

申请号：US10932130

申请日：2004-09-01

Applicant: Ronald Weimer

Inventor： Ronald Weimer

IPC: H01L21/28 ,  H01L29/51 ,  H01L21/8242 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/28185 ,  H01L21/28061 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

Abstract: Methods for forming a nitride barrier film layer in semiconductor devices such as gate structures, and barrier layers, semiconductor devices and gate electrodes are provided. The nitride layer is particularly useful as a barrier to boron diffusion into an oxide film. The nitride barrier layer is formed by selectively depositing silicon onto an oxide substrate as a thin layer, and then thermally annealing the silicon layer in a nitrogen-containing species or exposing the silicon to a plasma source of nitrogen to nitridize the silicon layer.

公开(公告)号：US20050026348A1

公开(公告)日：2005-02-03

申请号：US10931840

申请日：2004-09-01

Applicant: Ronald Weimer

Inventor： Ronald Weimer

IPC: H01L21/28 ,  H01L29/51 ,  H01L21/8242

CPC classification number: H01L21/28185 ,  H01L21/28061 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

Abstract: Methods for forming a nitride barrier film layer in semiconductor devices such as gate structures, and barrier layers, semiconductor devices and gate electrodes are provided. The nitride layer is particularly useful as a barrier to boron diffusion into an oxide film. The nitride barrier layer is formed by selectively depositing silicon onto an oxide substrate as a thin layer, and then thermally annealing the silicon layer in a nitrogen-containing species or exposing the silicon to a plasma source of nitrogen to nitridize the silicon layer.

Abstract translation: 提供了在诸如栅极结构和势垒层，半导体器件和栅电极的半导体器件中形成氮化物阻挡膜层的方法。 氮化物层特别可用作硼扩散到氧化物膜中的阻挡层。 氮化物阻挡层通过将硅选择性地沉积到氧化物衬底上作为薄层而形成，然后对含氮物质中的硅层进行热退火或将硅暴露于等离子体氮源以氮化硅层。