公开(公告)号：US06951585B2

公开(公告)日：2005-10-04

申请号：US10397310

申请日：2003-03-27

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Hiroshi Sato ,  Shoji Nishida ,  Yasuyoshi Takai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Hiroshi Sato ,  Shoji Nishida ,  Yasuyoshi Takai

IPC分类号： C30B19/02 ,  H01L31/18 ,  C30B19/10

CPC分类号： H01L31/182 ,  C30B19/02 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521

摘要： A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises a first step for growing poly crystals to a predetermined thickness, and a second step for melting back a part of the poly crystals grown in the first step in the melt, wherein the relative position between the substrate and melt is changed between the first step and second step, bringing melt with different temperature into contact with the polycrystalline surface. The obtained poly crystals have properties rivaling those of poly crystals used in conventional solar cells but with little risk of trouble such as line breakage of grid electrodes in application to solar cells, and can be obtained in great quantities at low costs.

摘要翻译： 一种液晶生长方法，用于将熔融物中的多晶衬底浸入其中溶解晶体成分的坩埚中，从而在基底上生长多晶体，包括将多晶生长至预定厚度的第一步骤和用于熔化的第二步骤 将在熔体中第一步生长的一部分多晶体返回，其中在第一步骤和第二步骤之间改变衬底和熔体之间的相对位置，使不同温度的熔体与多晶表面接触。 所获得的多晶体具有与常规太阳能电池中使用的多晶体的性能相当的特性，但在应用于太阳能电池的情况下几乎没有诸如栅电极的线断线等故障的风险，并且可以以低成本大量获得。

公开(公告)号：US06429035B2

公开(公告)日：2002-08-06

申请号：US09198263

申请日：1998-11-24

申请人： Katsumi Nakagawa ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane

发明人： Katsumi Nakagawa ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane

IPC分类号： H01L2120

CPC分类号： H01L27/1296 ,  C30B19/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  H01L29/66765 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of growing single crystal silicon in a liquid phase comprises preparing a melt by dissolving a solid of silicon containing boron, aluminum, phosphorus or arsenic at a predetermined concentration into indium melted in a carbon boat or a quartz crucible, supersaturating the melt, and submerging a substrate into the melt, thereby growing a silicon crystal containing a dopant element. This method can provide a method of growing a thin film of crystalline silicon having a high crystallinity and a dopant concentration favorably controlled, thereby serving for mass production of inexpensive solar cells which have high performance as well as image displays which have high contrast and are free from color ununiformity.

摘要翻译： 在液相中生长单晶硅的方法包括通过将以预定浓度的含有硼，铝，磷或砷的硅的固体溶解在在碳舟或石英坩埚中熔化的铟中来制备熔体，使熔体过饱和，以及 将衬底浸入熔体中，从而生长含有掺杂元素的硅晶体。 该方法可以提供一种生长具有高结晶度和有利于控制的掺杂剂浓度的晶体硅薄膜的方法，从而用于批量生产具有高性能的廉价太阳能电池以及具有高对比度且无游离的图像显示器 从颜色不均匀。

公开(公告)号：US06258698B1

公开(公告)日：2001-07-10

申请号：US09046600

申请日：1998-03-24

申请人： Yukiko Iwasaki ,  Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Yukiko Iwasaki ,  Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2130

CPC分类号： H01L21/2007

摘要： A process for producing a semiconductor substrate is provided which comprises a first step of anodizing a surface of a first substrate to form a porous layer on the surface, a second step of simultaneously forming a semiconductor layer on the surface of the porous layer and a semiconductor layer on a surface of the first substrate on its side opposite to the porous layer side, a third step of bonding the surface of the semiconductor layer formed on the surface of the porous layer to a surface of a second substrate, and a fourth step of separating the first substrate and the second substrate at the part of the porous layer to transfer to the second substrate the semiconductor layer formed on the surface of the porous layer, thereby providing the semiconductor layer on the surface of the second substrate. This makes it possible to produce semiconductor substrates at a low cost while making good use of expensive substrate materials.

摘要翻译： 提供了一种制造半导体衬底的方法，其包括：第一步骤，阳极氧化第一衬底的表面以在表面上形成多孔层;第二步骤，在多孔层的表面上同时形成半导体层，半导体 在与第一基板的与多孔层侧相反的一侧的表面上的第三步骤，将形成在多孔层的表面上的半导体层的表面接合到第二基板的表面上的第三步骤， 在所述多孔层的一部分处分离所述第一基板和所述第二基板，以将所述半导体层转移到所述第二基板，所述半导体层形成在所述多孔层的表面上，从而在所述第二基板的表面上提供所述半导体层。 这使得可以以低成本制造半导体衬底，同时充分利用昂贵的衬底材料。

公开(公告)号：US06248948B1

公开(公告)日：2001-06-19

申请号：US09310953

申请日：1999-05-13

申请人： Katsumi Nakagawa ,  Shoji Nishida ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Shoji Nishida ,  Yukiko Iwasaki

IPC分类号： H01L2500

CPC分类号： H01L31/042 ,  H01L31/0443 ,  H01L31/0504 ,  Y02E10/50

摘要： A solar cell module comprises a plurality of unit cells connected in series, each of the unit cells comprising in this order an electrode, a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type. The electrode has a region not covered with the first semiconductor layer. The second semiconductor layer has a main region and a subregion which are separated by a groove. The main region of the second semiconductor layer in one unit cell is electrically connected to the region of the electrode not covered with the first semiconductor layer in another unit cell adjacent to the one unit cell. The region of the electrode not covered with the first semiconductor layer in the one unit cell is electrically connected to the subregion of the second semiconductor layer in the another unit cell. With this structure, it is possible to simplify the formation of a bypass diode and therefore provide a solar cell module with high reliability at a low cost.

摘要翻译： 太阳能电池模块包括串联连接的多个单元电池，每个单电池依次包括电极，具有第一导电类型的第一半导体层和具有第二导电类型的第二半导体层。 电极具有未被第一半导体层覆盖的区域。 第二半导体层具有由沟槽分隔开的主区域和子区域。 一个单元电池中的第二半导体层的主要区域与在一个单位电池相邻的另一单元电池中未被第一半导体层覆盖的电极的区域电连接。 在一个单元电池中没有被第一半导体层覆盖的电极的区域电连接到另一个晶胞中的第二半导体层的子区域。 利用这种结构，可以简化旁路二极管的形成，从而以低成本提供高可靠性的太阳能电池模块。

公开(公告)号：US20100136869A1

公开(公告)日：2010-06-03

申请号：US12627982

申请日：2009-11-30

申请人： Naofumi Aoki ,  Shoji Nishida

发明人： Naofumi Aoki ,  Shoji Nishida

IPC分类号： H01J9/00 ,  H01J9/12

CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0423 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

摘要： The following method is provided: a method of readily fabricating an electron-emitting device, coated with a low-work function material, having good electron-emitting properties with high reproducibility such that differences in electron-emitting properties between electron-emitting devices are reduced. Before a structure is coated with the low-work function material, a metal oxide layer is formed on the structure.

摘要翻译： 提供以下方法：容易地制造涂覆有低功函数材料的电子发射器件的方法，其具有良好的电子发射特性，具有高重现性，使得电子发射器件之间电子发射特性的差异减小 。 在用低功函数材料涂覆结构之前，在结构上形成金属氧化物层。

公开(公告)号：US20060113635A1

公开(公告)日：2006-06-01

申请号：US10540261

申请日：2004-12-14

申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

IPC分类号： H01L21/20 ,  H01L31/117

CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

摘要翻译： SiGe层生长在硅衬底上。 SiGe层或硅衬底和SiGe层通过对SiGe层进行阳极氧化以形成应变感应多孔层或多孔硅层和应变感应多孔层而被开孔化。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变感应多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 可以获得具有高应变硅层的高质量半导体衬底。

公开(公告)号：US06387780B1

公开(公告)日：2002-05-14

申请号：US08932708

申请日：1997-09-18

申请人： Shoji Nishida

发明人： Shoji Nishida

IPC分类号： H01L2100

CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/955

摘要： Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.

公开(公告)号：US5279686A

公开(公告)日：1994-01-18

申请号：US837976

申请日：1992-02-20

申请人： Shoji Nishida

发明人： Shoji Nishida

IPC分类号： H01L21/20 ,  H01L31/18 ,  H01L31/0368

CPC分类号： H01L31/182 ,  H01L21/02381 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  Y02E10/546 ,  Y02P70/521

摘要： There is disclosed a polycrystalline silicon solar cell, utilizing a continuous polycrystalline silicon film consisting of single crystals grown from a plurality of small nucleation surfaces provided on a non-nucleation surface. The semiconductor junction, providing the photoelectromotive force of the solar cell, is formed on the single crystals, avoiding the areas of grain boundaries formed by mutual contact of the single crystals, in order to eliminate the drawbacks resulting from such boundaries. The semiconductor junction is formed by masking the areas of the grain boundaries with a suitable masking material, such as photoresist.

摘要翻译： 公开了一种多晶硅太阳能电池，其利用由设置在非成核表面上的多个小成核面生长的单晶构成的连续多晶硅膜。 提供太阳能电池的光电动势的半导体结形成在单晶上，避免了由单晶相互接触而形成的晶界的区域，以消除由这种边界产生的缺陷。 通过用合适的掩模材料（例如光致抗蚀剂）掩蔽晶界的区域来形成半导体结。

公开(公告)号：US5269852A

公开(公告)日：1993-12-14

申请号：US887821

申请日：1992-05-26

申请人： Shoji Nishida

发明人： Shoji Nishida

IPC分类号： H01L27/142 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/06

CPC分类号： H01L31/03682 ,  H01L31/0475 ,  H01L31/1804 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A crystalline solar cell is formed by growing single crystals on respective plural nucleation areas provided on a non-nucleation surface in such a manner that the neighboring single crystals do not have a crystal grain boundary therebetween. The solar cell comprises an insulation layer having an aperture formed on each of said single crystals. A semiconductor junction is formed at each single crystal at the respective aperture.

摘要翻译： 通过在设置在非成核面上的相应的多个成核区域上生长单晶以使得相邻的单晶在其之间不具有晶界的方式形成晶体太阳能电池。 太阳能电池包括在每个所述单晶上形成有孔的绝缘层。 在相应孔径的每个单晶处形成半导体结。

公开(公告)号：US5254481A

公开(公告)日：1993-10-19

申请号：US794462

申请日：1991-11-19

申请人： Shoji Nishida

发明人： Shoji Nishida

IPC分类号： H01L21/205 ,  C30B25/18 ,  H01L31/0368 ,  H01L31/04 ,  H01L31/062 ,  H01L31/072 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/0745 ,  C30B25/18 ,  H01L31/03682 ,  H01L31/062 ,  H01L31/077 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell has a polycrystalline silicon layer formed on a metal substrate. The crystal orientation of the crystal grains of the silicon layer is regulated in the film thickness direction.

摘要翻译： 太阳能电池具有在金属基板上形成的多晶硅层。 硅层的晶粒的晶体取向在膜厚度方向上被调整。