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    SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING GRATING COUPLER FOR OPTICAL COMMUNICATION AND METHODS OF FORMING THE SAME
    32.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING GRATING COUPLER FOR OPTICAL COMMUNICATION AND METHODS OF FORMING THE SAME 有权
    半导体集成电路，包括用于光通信的光栅耦合器及其形成方法

    公开(公告)号：US20100111469A1

    公开(公告)日：2010-05-06

    申请号：US12684677

    申请日：2010-01-08

    Applicant: Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

    Inventor： Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

    IPC: G02B6/122

    CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

    Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

    Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

    Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same
    33.
    发明授权
    Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same 失效

    公开(公告)号：US06621843B2

    公开(公告)日：2003-09-16

    申请号：US09842521

    申请日：2001-04-25

    Applicant: Byueng-Su Yoo ,  O-Kyun Kwon ,  Young-Gu Ju

    Inventor： Byueng-Su Yoo ,  O-Kyun Kwon ,  Young-Gu Ju

    IPC: H01S500

    CPC classification number: B82Y20/00 ,  H01S5/18308 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/2009 ,  H01S5/2072 ,  H01S5/3054 ,  H01S5/34306 ,  H01S2301/176

    Abstract: Disclosed is a surface-emitting laser device which eliminates an absorption loss of a p-type doped layer and reduces a scattering loss in a mirror layer and a carrier loss due to a current induction, comprising a first conductive type of semiconductor substrate; a bottom mirror layer formed on the semiconductor substrate and composed of a first conductive type of semiconductor layer; an active layer formed on the bottom mirror layer; an electron leakage barrier layer formed on the active layer and having an energy gap larger than the active layer; a current induction layer formed on the electron leakage barrier layer and a second conductive type of semiconductor layer; a current extension layer formed on the current induction layer and composed of the second conductive type of semiconductor layer; and a top mirror layer formed on the current extension layer, wherein the top mirror layer includes undoped center portion and its both end having the second conductive type of dopant diffusion region.

    Folded cavity laser
    34.
    发明授权
    Folded cavity laser 失效

    公开(公告)号：US06584136B2

    公开(公告)日：2003-06-24

    申请号：US09882342

    申请日：2001-06-15

    Applicant: Young-Gu Ju ,  Byueng-Su Yoo ,  O-Kyun Kwon

    Inventor： Young-Gu Ju ,  Byueng-Su Yoo ,  O-Kyun Kwon

    IPC: H01S308

    CPC classification number: B82Y20/00 ,  B82Y10/00 ,  H01S5/005 ,  H01S5/0267 ,  H01S5/18

    Abstract: A folded cavity laser for generating a laser beam, includes a substrate provided with a distributed Bragg reflector (DBR); an active medium formed above the DBR for amplifying the laser beam; a first and a second mirrors formed on sides of the active medium, respectively, for making a horizontal cavity and for reflecting the amplified laser beam to the DBR; and a microlens, formed on the substrate opposite the DBR, for making the amplified laser beam astigmatic after passing therethrough.

    SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME
    36.
    发明申请
    SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME 有权
    半导体光学器件及其制造方法

    公开(公告)号：US20120281274A1

    公开(公告)日：2012-11-08

    申请号：US13307067

    申请日：2011-11-30

    Applicant: Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    Inventor： Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    IPC: H01S5/20 ,  H01L21/04

    CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

    Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

    Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

    LIGHT GENERATING DEVICE
    37.
    发明申请
    LIGHT GENERATING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20120134014A1

    公开(公告)日：2012-05-31

    申请号：US13281463

    申请日：2011-10-26

    Applicant: Jong Sool Jeong ,  Byung-seok Choi ,  O-Kyun Kwon

    Inventor： Jong Sool Jeong ,  Byung-seok Choi ,  O-Kyun Kwon

    IPC: H01S5/20

    CPC classification number: H01S5/141 ,  H01S3/07 ,  H01S3/08027 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/4062 ,  H01S2301/16

    Abstract: Disclosed is a light generating device which comprises a first reflective semiconductor optical amplifier emitting a first light along a first direction, a second reflective semiconductor optical amplifier emitting the second light in a direction opposite to the first direction, an optical distributer reflecting a part of an incident light and to pass the remaining of the incident light, and an optical comb filter passing a wavelength component of a specific period.

    Abstract translation: 公开了一种发光装置，其包括沿着第一方向发射第一光的第一反射半导体光学放大器，沿与第一方向相反的方向发射第二光的第二反射半导体光学放大器，反射部分的光分配器 入射光并使剩余的入射光通过，并且通过具有特定周期的波长分量的光梳状滤波器。

    Semiconductor device and method for forming the same
    38.
    发明授权
    Semiconductor device and method for forming the same 有权
    半导体装置及其形成方法

    公开(公告)号：US08183633B2

    公开(公告)日：2012-05-22

    申请号：US12847974

    申请日：2010-07-30

    Applicant: O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

    Inventor： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

    IPC: H01L27/12

    CPC classification number: H01L21/76267 ,  H01L21/76283

    Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

    Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

    Semiconductor integrated circuits including grating coupler for optical communication and methods of forming the same
    39.
    发明授权
    Semiconductor integrated circuits including grating coupler for optical communication and methods of forming the same 有权
    包括用于光通信的光栅耦合器的半导体集成电路及其形成方法

    公开(公告)号：US08165437B2

    公开(公告)日：2012-04-24

    申请号：US12684677

    申请日：2010-01-08

    Applicant: Jung-Hyung Pyo ,  O-Kyun Kwon ,  Gyung-Ock Kim

    Inventor： Jung-Hyung Pyo ,  O-Kyun Kwon ,  Gyung-Ock Kim

    IPC: G02B6/34 ,  G02B6/42

    CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

    Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

    Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

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