公开(公告)号：US07294862B2

公开(公告)日：2007-11-13

申请号：US11373639

申请日：2006-03-09

申请人： Jonathan J. Wierer, Jr. ,  Michael R. Krames ,  Mihail M. Sigalas

发明人： Jonathan J. Wierer, Jr. ,  Michael R. Krames ,  Mihail M. Sigalas

IPC分类号： H01L29/22

CPC分类号： H01L33/20 ,  B82Y20/00 ,  G02B6/1225 ,  H01L33/08 ,  H01L2933/0083

摘要： A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.

摘要翻译： 在III族氮化物发光器件的n型层中形成光子晶体结构。 在一些实施例中，在隧道结上形成光子晶体n型层。 该器件包括第一导电类型的第一层，第二导电类型的第一层和将第一导电类型的第一层与第一导电类型的第一层分开的有源区。 隧道结包括第一导电类型的第二层和第二导电类型的第二层，并且将第一导电类型的第一层与第一导电类型的第三层分离。 在第一导电类型的第三层中形成光子晶体结构。

公开(公告)号：US07256483B2

公开(公告)日：2007-08-14

申请号：US10977294

申请日：2004-10-28

申请人： John Epler ,  Paul S. Martin ,  Michael R. Krames

发明人： John Epler ,  Paul S. Martin ,  Michael R. Krames

IPC分类号： H01L23/495

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

公开(公告)号：US07122839B2

公开(公告)日：2006-10-17

申请号：US10977867

申请日：2004-10-29

申请人： Yu-Chen Shen ,  Michael R. Krames ,  Nathan F. Gardner

发明人： Yu-Chen Shen ,  Michael R. Krames ,  Nathan F. Gardner

IPC分类号： H01L27/15

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3205 ,  H01S5/34333

摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1−xN, AlxGa1−xN, or InxAlyGa1−x−yN.

摘要翻译： 半导体发光器件中的III族氮化物发光层具有渐变组成。 发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。 在发光层中的分级可以减少与发光层中的极化场相关的问题。 发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

公开(公告)号：US07026663B2

公开(公告)日：2006-04-11

申请号：US10855295

申请日：2004-05-26

申请人： Michael R. Krames ,  Gerd O. Mueller ,  Regina B. Mueller-Mach

发明人： Michael R. Krames ,  Gerd O. Mueller ,  Regina B. Mueller-Mach

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/50 ,  H01L2224/14

摘要： A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.

摘要翻译： 一种结构包括半导体发光器件，其包括设置在n型区域和p型区域之间的发光层。 发光层发射第一峰值波长的第一光。 吸收第一光并发射第二峰值波长的第二光的波长转换材料设置在第一光的路径中。 透射部分第一光并吸收或反射第一光的一部分的过滤材料设置在波长转换材料的上方。

公开(公告)号：US07012279B2

公开(公告)日：2006-03-14

申请号：US10691026

申请日：2003-10-21

申请人： Jonathan J. Wierer Jr. ,  Michael R. Krames ,  Mihail M. Sigalas

发明人： Jonathan J. Wierer Jr. ,  Michael R. Krames ,  Mihail M. Sigalas

IPC分类号： H01L29/22

CPC分类号： H01L33/20 ,  B82Y20/00 ,  G02B6/1225 ,  H01L33/08 ,  H01L2933/0083

摘要： A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.

公开(公告)号：US06847057B1

公开(公告)日：2005-01-25

申请号：US10633058

申请日：2003-08-01

申请人： Nathan F. Gardner ,  Jonathan J. Wierer, Jr. ,  Gerd O. Mueller ,  Michael R. Krames

发明人： Nathan F. Gardner ,  Jonathan J. Wierer, Jr. ,  Gerd O. Mueller ,  Michael R. Krames

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/40

CPC分类号： H01L33/405 ,  H01L33/0004 ,  H01L33/22

摘要： A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.

摘要翻译： III族氮化物器件包括第一n型层，第一p型层和分离第一p型层和第一n型层的有源区。 该装置可以包括第二n型层和分隔第一和第二n型层的隧道结。 第一和第二触点电连接到第一和第二n型层。 第一和第二触点由相同的材料形成，对有源区域发射的光的反射率大于75％的材料形成。 该器件可以包括布置在第二n型层和第二接触之间的纹理化层，或者形成在与器件层相对的生长衬底的表面上。

公开(公告)号：US6046465A

公开(公告)日：2000-04-04

申请号：US62368

申请日：1998-04-17

申请人： Shih-Yuan Wang ,  Yong Chen ,  Scott W. Corzine ,  R. Scott Kern ,  Carrie C. Coman ,  Michael R. Krames ,  Frederick A. Kish, Jr. ,  Yawara Kaneko

发明人： Shih-Yuan Wang ,  Yong Chen ,  Scott W. Corzine ,  R. Scott Kern ,  Carrie C. Coman ,  Michael R. Krames ,  Frederick A. Kish, Jr. ,  Yawara Kaneko

IPC分类号： H01L33/10 ,  H01L33/12 ,  H01L33/24 ,  H01S5/00 ,  H01S5/02 ,  H01S5/14 ,  H01S5/183 ,  H01S5/187 ,  H01S5/323 ,  H01S5/343 ,  C30B19/00 ,  H01L33/00

CPC分类号： H01L33/24 ,  H01L33/10 ,  H01L33/12 ,  H01S5/18341 ,  H01S5/0205 ,  H01S5/0213 ,  H01S5/0425 ,  H01S5/18305 ,  H01S5/18369 ,  H01S5/32341

摘要： A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocation defect density where it is grown over the buried reflector making it suitable for high quality optical light emitting devices, and the embedded reflector eliminates the need for developing an additional reflector.

摘要翻译： 外延横向生长层中的掩埋反射体50形成发光器件的一部分，并允许制造基本上低的位错密度的半导体材料。 横向生长的材料的位错缺陷密度低，在掩埋反射器上生长，使其适用于高质量的光发射器件，并且嵌入式反射器消除了开发另外的反射器的需要。

公开(公告)号：US08492244B2

公开(公告)日：2013-07-23

申请号：US13081788

申请日：2011-04-07

申请人： Pascal Guenard ,  Bruce Faure ,  Fabrice Letertre ,  Michael R. Krames ,  Nathan F. Gardner ,  Melvin B. McLaurin

发明人： Pascal Guenard ,  Bruce Faure ,  Fabrice Letertre ,  Michael R. Krames ,  Nathan F. Gardner ,  Melvin B. McLaurin

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L21/6835 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1892 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L2221/68359 ,  Y02E10/544 ,  Y02P70/521

摘要： The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.

摘要翻译： 本发明提供了在目标基底上形成至少部分松弛的应变材料层的方法。 所述方法包括在中间衬底上形成应变材料层的岛，通过第一热处理至少部分地松弛应变材料岛，并将至少部分松弛的应变材料岛转移到目标衬底。 通过存在与应变材料层相邻的低粘度或柔顺层，促进了至少部分松弛。 本发明还提供了具有至少部分松弛的应变材料层的半导体结构，以及使用至少部分松弛的应变材料层制造的半导体器件。

公开(公告)号：US08486771B2

公开(公告)日：2013-07-16

申请号：US12563953

申请日：2009-09-21

申请人： Fabrice Letertre ,  Bruce Faure ,  Michael R. Krames ,  Nathan F. Gardner

发明人： Fabrice Letertre ,  Bruce Faure ,  Michael R. Krames ,  Nathan F. Gardner

IPC分类号： H01L21/00

CPC分类号： H01L21/02639 ,  H01L21/02367 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254

摘要： Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.

摘要翻译： 制造半导体材料的松弛层的方法包括形成覆盖柔性材料层的半导体材料的结构，随后改变柔性材料的粘度以减小半导体材料内的应变。 在沉积第二层半导体材料期间，柔性材料可以回流。 可以选择柔性材料，使得当沉积第二层半导体材料时，改变柔性材料的粘度赋予结构松弛性。 在一些实施例中，半导体材料层可以包括III-V型半导体材料，例如氮化铟镓。 还公开了制造半导体结构和器件的方法。 在这种方法中形成了新的中间结构。 工程衬底包括多个结构，其包括设置在表现出可变粘度的材料层上的半导体材料。

公开(公告)号：US20120025231A1

公开(公告)日：2012-02-02

申请号：US13269669

申请日：2011-10-10

申请人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

发明人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

IPC分类号： H01L33/08

CPC分类号： H01L33/0079 ,  H01L21/2654 ,  H01L27/153

摘要： LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

摘要翻译： LED层生长在蓝宝石衬底上。 单个倒装芯片LED通过挖沟或掩模离子注入形成。 包含多个LED的模块被切割并安装在底座晶片上。 在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。 然后去除生长衬底，例如通过激光剥离。 在安装之前或之后形成半绝缘层，将LED机械连接在一起。 半绝缘层可以通过在衬底和LED层之间离子注入层来形成。 可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。 然后将底座切成块，以创建包含串联LED的LED模块。