公开(公告)号：US20190189627A1

公开(公告)日：2019-06-20

申请号：US16284946

申请日：2019-02-25

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Lei Bi ,  Roy E. Meade ,  Qian Tao ,  Ashonita A. Chavan

IPC: H01L27/11507 ,  H01L29/78 ,  H01L29/66 ,  H01L27/1159 ,  H01L21/28 ,  H01L49/02 ,  H01L29/51

CPC classification number: H01L27/11507 ,  H01L21/28291 ,  H01L27/1159 ,  H01L28/55 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).

公开(公告)号：US10311949B2

公开(公告)日：2019-06-04

申请号：US15864995

申请日：2018-01-08

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: G11C13/00 ,  H01L45/00 ,  G11C7/04

Abstract: Methods of forming and operating phase change memory devices include adjusting an activation energy barrier between a metastable phase and a stable phase of a phase change material in a memory cell. In some embodiments, the activation energy barrier is adjusted by applying stress to the phase change material in the memory cell. Memory devices include a phase change memory cell and a material, structure, or device for applying stress to the phase change material in the memory cell. In some embodiments, a piezoelectric device may be used to apply stress to the phase change material. In additional embodiments, a material having a thermal expansion coefficient greater than that of the phase change material may be positioned to apply stress to the phase change material.

公开(公告)号：US10242989B2

公开(公告)日：2019-03-26

申请号：US14282520

申请日：2014-05-20

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Lei Bi ,  Roy E. Meade ,  Qian Tao ,  Ashonita A. Chavan

IPC: H01L27/115 ,  H01L27/11507 ,  H01L49/02 ,  H01L27/1159 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).

公开(公告)号：US20180277373A1

公开(公告)日：2018-09-27

申请号：US15986129

申请日：2018-05-22

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Sumeet C. Pandey

IPC: H01L21/268 ,  H01L21/02 ,  H01L29/06 ,  H01L21/477

CPC classification number: H01L21/268 ,  H01L21/02521 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02675 ,  H01L21/428 ,  H01L21/477 ,  H01L29/0665

Abstract: A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

公开(公告)号：US20170315295A1

公开(公告)日：2017-11-02

申请号：US15648326

申请日：2017-07-12

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: G02B6/136 ,  H01L21/762 ,  G02B6/122 ,  H01L21/84 ,  G02B6/12

CPC classification number: G02B6/136 ,  G02B6/122 ,  G02B2006/12061 ,  H01L21/76283 ,  H01L21/84

Abstract: Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.

公开(公告)号：US09345135B2

公开(公告)日：2016-05-17

申请号：US14454550

申请日：2014-08-07

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Gurtej S. Sandhu

IPC: G11C11/14 ,  H05K1/02 ,  G11C11/16 ,  H01L23/00 ,  H05K1/11 ,  H05K1/14 ,  H05K3/36 ,  H05K7/04 ,  H05K3/46 ,  G11C19/08 ,  G11C11/15 ,  G11C8/08 ,  G11C8/10 ,  H05K3/34 ,  B82Y99/00

CPC classification number: H05K1/0298 ,  B82Y99/00 ,  G11C8/08 ,  G11C8/10 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C19/0808 ,  H01L24/02 ,  H01L24/80 ,  H01L2224/04042 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/014 ,  H01L2924/12042 ,  H05K1/112 ,  H05K1/113 ,  H05K1/144 ,  H05K3/3436 ,  H05K3/36 ,  H05K3/4697 ,  H05K7/04 ,  H05K2201/09381 ,  Y10S977/932 ,  Y10T29/49126 ,  Y10T29/49128 ,  H01L2924/00

Abstract: Electronic devices may include a first substrate including circuitry components within the substrate, a microscale bond pad on a surface of the substrate, and a via electrically connecting the microscale bond pad to one of the circuitry components. A distance between centers of at least some adjacent circuitry components of the circuitry components may be a nanoscale distance. A second substrate may be electrically connected to the microscale bond pad. Methods of forming electronic devices may involve positioning a first substrate adjacent to a second substrate and electrically connecting the second substrate to a microscale bond pad on a surface of the first substrate. The first substrate may include circuitry components within the first substrate and a via electrically connecting the microscale bond pad to one of the circuitry components. A distance between centers of at least some adjacent circuitry components of the circuitry components may be a nanoscale distance.

Abstract translation: 电子器件可以包括第一衬底，其包括衬底内的电路元件，衬底表面上的微结构焊盘，以及将微结构焊盘电连接到电路部件之一的通孔。 电路部件的至少一些相邻电路部件的中心之间的距离可以是纳米级距离。 第二衬底可以电连接到微结构焊盘。 形成电子器件的方法可以包括将第一衬底定位成与第二衬底相邻并且将第二衬底电连接到第一衬底的表面上的微结构焊盘。 第一衬底可以包括第一衬底内的电路部件和将微结构焊盘电连接到电路部件之一的通孔。 电路部件的至少一些相邻电路部件的中心之间的距离可以是纳米级距离。

公开(公告)号：US20160085153A1

公开(公告)日：2016-03-24

申请号：US14495278

申请日：2014-09-24

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Gurtej S. Sandhu

IPC: G03F7/16 ,  G03F7/34 ,  G03F7/20

CPC classification number: G03F7/0005 ,  G02B6/00 ,  G03F7/70283

Abstract: A method of forming a photonic device structure comprises forming a photoresist over a photonic material over a substrate. The photoresist is exposed to radiation through a gray-tone mask to form at least one photoexposed region and at least one non-photoexposed region of the photoresist. The at least one photoexposed region of the photoresist or the at least one non-photoexposed region of the photoresist is removed to form photoresist features. The photoresist features and unprotected portions of the photonic material are removed to form photonic features. Other methods of forming a photonic device structure, and a method of forming an electronic device are also described.

Abstract translation: 形成光子器件结构的方法包括在衬底上在光子材料上形成光致抗蚀剂。 光致抗蚀剂通过灰色蒙版掩模暴露于辐射以形成光致抗蚀剂的至少一个光引射区域和至少一个非光引射区域。 去除光致抗蚀剂的至少一个光引射区域或光致抗蚀剂的至少一个非光引射区域以形成光致抗蚀剂特征。 去除光致抗蚀剂特征和光子材料的未保护部分以形成光子特征。 还描述了形成光子器件结构的其它方法，以及形成电子器件的方法。

公开(公告)号：US08811063B2

公开(公告)日：2014-08-19

申请号：US13956242

申请日：2013-07-31

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Bhaskar Srinivasan ,  Gurtej S. Sandhu

IPC: G11C11/21 ,  G11C13/00 ,  G11C13/02 ,  G11C11/00

CPC classification number: H01L45/085 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2213/56 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146

Abstract: Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer.

Abstract translation: 一些实施例包括编程存储器单元的方法。 多个电荷载体可以在存储器单元内移动，其中跨越移动电荷载流子的绝对值大于2的平均电荷。一些实施例包括形成和编程基于离子传输的存储单元的方法。 堆叠形成为在第一和第二电极之间具有可编程材料。 可编程材料具有在可编程材料内移动的移动离子，以将可编程材料从一个存储器状态转换到另一个。 移动移动离子上的平均电荷具有大于2的绝对值。一些实施例包括在第一和第二电极之间具有可编程材料的存储单元。 可编程材料包括氮化铝第一层，并且包括含有与第一层共同的可移动离子物质的第二层。

公开(公告)号：US20130314973A1

公开(公告)日：2013-11-28

申请号：US13956242

申请日：2013-07-31

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Bhaskar Srinivasan ,  Gurtej S. Sandhu

IPC: G11C13/00 ,  H01L45/00

CPC classification number: H01L45/085 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2213/56 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146

Abstract: Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer.

Abstract translation: 一些实施例包括编程存储器单元的方法。 多个电荷载体可以在存储器单元内移动，其中跨越移动电荷载流子的绝对值大于2的平均电荷。一些实施例包括形成和编程基于离子传输的存储单元的方法。 堆叠形成为在第一和第二电极之间具有可编程材料。 可编程材料具有在可编程材料内移动的移动离子，以将可编程材料从一个存储器状态转换到另一个。 移动移动离子上的平均电荷具有大于2的绝对值。一些实施例包括在第一和第二电极之间具有可编程材料的存储单元。 可编程材料包括氮化铝第一层，并且包括含有与第一层共同的可移动离子物质的第二层。

公开(公告)号：US11237327B2

公开(公告)日：2022-02-01

申请号：US16543446

申请日：2019-08-16

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: G02B6/136 ,  H01L21/762 ,  G02B6/122 ,  G02B6/12 ,  H01L21/84

Abstract: Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.