公开(公告)号：US06325081B1

公开(公告)日：2001-12-04

申请号：US09214240

申请日：1999-05-17

申请人： Nobuhiro Miki ,  Takahisa Nitta ,  Yasuyuki Harada ,  Tadahiro Ohmi

发明人： Nobuhiro Miki ,  Takahisa Nitta ,  Yasuyuki Harada ,  Tadahiro Ohmi

IPC分类号： B08B302

CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/67051

摘要： A washing apparatus and a washing method, which further improve a washing effect and enable highly clean washing with a small amount of chemical. Also, it is an object of the invention to provide a washing apparatus of high throughput involving rapid switching of various chemicals of high responsibility and capable of performing a series of washing operations at high speed. The washing apparatus comprises undiluted cleaning liquid injection means for injecting an undiluted solution or undiluted gas of a cleaning liquid into a ultrapure water channel to make a cleaning liquid of a desired concentration, cleaning liquid supplying means connected to the super demineralized water channel for simultaneously supplying front and rear surface of a substrate with a cleaning liquid adjusted to a desired concentration or a ultrapure water, means for superposing ultrasonic wave or high frequency sound waves of 0.5 MHz or more on the substrate through the cleaning liquid, and means for rotating the substrate or means for moving either of the substrate and the cleaning liquid supplying means in one direction, whereby injection of the undiluted solution or undiluted gas into the ultrapure water channel is controlled to continuously perform washing of the substrate by the cleaning liquid and washing by the ultrapure water.

摘要翻译： 一种洗涤装置和洗涤方法，其进一步改善洗涤效果并且能够用少量化学品进行高度清洁的洗涤。 另外，本发明的目的是提供一种高产量的洗涤装置，涉及快速切换各种高度责任的化学品，能够高速地进行一系列洗涤操作。洗涤装置包括未稀释的清洗液注入装置， 将未稀释的溶液或清洁液体的未稀释气体输送到超纯水通道中以制备所需浓度的清洗液体，连接到超级软化水通道的清洗液供应装置，用于同时向基材的前表面和后表面提供清洁液体 调节到期望浓度或超纯水的装置，用于通过清洁液体在衬底上叠加超声波或0.5MHz以上的高频声波的装置，以及用于旋转衬底或用于移动衬底和清洁装置的装置的装置 液体供应装置在一个方向上，由此注射未稀释的 控制溶液或未稀释气体进入超纯水通道，以通过清洗液体连续地进行基材清洗，并通过超纯水进行洗涤。

公开(公告)号：US06258244B1

公开(公告)日：2001-07-10

申请号：US09076834

申请日：1998-05-13

申请人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

发明人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

IPC分类号： C25D900

CPC分类号： H01L21/3063 ,  C25D11/005 ,  C25D11/32 ,  H01L21/76256

摘要： In order to effectively remove gas molecules of a by-product in a chemical reaction in a solution so as to achieve high efficiency, high rate, and uniformity of the chemical reaction in the solution and in order to realize formation of a semiconductor substrate applicable to production of SOI structure and realize formation of a semiconductor substrate in which a light-emitting element or a gas sensor can be formed, on the basis of an inexpensive silicon substrate, the chemical reaction is performed while the concentration of a gas dissolved in a reaction solution in a reaction vessel is always controlled to be not more than the solubility thereof during the reaction.

摘要翻译： 为了有效地除去溶液中的化学反应中副产物的气体分子，以达到溶液中化学反应的高效率，高速率和均匀性，并且为了实现适用于 制造SOI结构，并且在廉价的硅衬底的基础上实现可以形成发光元件或气体传感器的半导体衬底的形成，同时在溶解在反应中的气体的浓度进行化学反应 反应容器中的溶液总是控制在不大于其在反应期间的溶解度。

公开(公告)号：US06255731B1

公开(公告)日：2001-07-03

申请号：US09123364

申请日：1998-07-28

申请人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

发明人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

IPC分类号： H01L2348

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L23/4825 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material layer has at least in part thereof an electroconductive reacted layer obtained by causing two metals, a metal and a semiconductor, a metal and a metal-semiconductor compound, a semiconductor and a metal-semiconductor compound, or two metal-semiconductor compounds to react each other. An electroconductive reaction terminating layer that is made of a material that does not react with the reacted layer is arranged between the reacted layer and the insulating layer or the support.

摘要翻译： 适用于千兆级集成（GSI）的半导体衬底包括至少其表面由半导体制成的支撑体，导电材料层，绝缘层和按上述顺序排列的半导体层。 导电材料层至少部分地具有通过使两种金属，金属和半导体，金属和金属 - 半导体化合物，半导体和金属 - 半导体化合物或两种金属 - 半导体化合物形成的导电反应层 互相反应。 在反应层和绝缘层或载体之间设置由不与反应层反应的材料制成的导电反应终止层。

公开(公告)号：US06220500B1

公开(公告)日：2001-04-24

申请号：US09130583

申请日：1998-08-07

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

IPC分类号： B23K120

CPC分类号： B23K35/383 ,  B23K1/20 ,  Y10T428/12535 ,  Y10T428/12979 ,  Y10T428/31678

摘要： A welding method for materials to be welded which are subjected to fluoride passivation treatment, and a fluoride passivation retreatment method, wherein, when fluoride passivation retreatment is conducted after welding, there is no generation of particles or dust. The method provides superior resistance to fluorine system gases. During fluoride passivation treatment, hydrogen is added to the gas (the back shield gas) flowing through the materials to be welded. In one embodiment of the welding method, the thickness of the fluoride passivated film in a predetermined range from the butt end surfaces of the materials to be welded is set to 10 nm or less, followed by subsequent welding. Furthermore, the fluoride passivation retreatment method, includes the steps of heating at least the welded parts following welding and flowing a gas containing fluorine gas in the interior portion of the parts.

摘要翻译： 对经过氟化物钝化处理的待焊接材料的焊接方法以及氟化物钝化再处理方法，其中，在焊接后进行氟化物钝化再处理时，不产生颗粒或灰尘。 该方法提供了优异的耐氟体系气体阻力。 在氟化物钝化处理期间，将氢气流入待焊接材料的气体（背面保护气体）。 在焊接方法的一个实施例中，氟化钝化膜在待焊接材料的对接端面的预定范围内的厚度设定为10nm以下，随后进行焊接。 此外，氟化物钝化再处理方法包括以下步骤：至少在焊接之后加热焊接部分，并且在部件的内部部分使含有氟气的气体流动。

公开(公告)号：US6039814A

公开(公告)日：2000-03-21

申请号：US887883

申请日：1997-07-03

申请人： Tadahiro Ohmi ,  Takahisa Nitta

发明人： Tadahiro Ohmi ,  Takahisa Nitta

IPC分类号： B01D19/00 ,  B08B3/12 ,  H01L21/304

CPC分类号： B08B3/12 ,  B01D19/0005 ,  B08B2203/002

摘要： A cleaning method comprising the steps of degassing gas dissolved in a cleaning liquid therefrom to a value not more than 5 ppm, loading ultrasonics with a frequency of 1 MHz or more to the cleaning liquid, and cleaning an object for cleaning with the cleaning liquid. Also included, is a cleaning method comprising the steps of: degassing gas dissolved in a surface-active agent-containing cleaning liquid therefrom to a value not more than 5 ppm, loading ultrasonics with a frequency of 1 MHz or more to the cleaning liquid, and cleaning an object for cleaning with the cleaning liquid. Water vapor may be used to sweep gas from a degassing device.

摘要翻译： 一种清洁方法，包括以下步骤：将溶解在其中的清洁液体中的气体脱气至不大于5ppm的值，向清洗液体加载频率为1MHz或更高的超声波，并用清洗液清洁物体进行清洁。 还包括一种清洁方法，包括以下步骤：将溶解在其中含有表面活性剂的清洗液中的气体脱气至不大于5ppm的值，向清洗液加载频率为1MHz以上的超声波， 并用清洁液清洗物体进行清洁。 水蒸气可用于从脱气装置中吹扫气体。

公开(公告)号：US4111724A

公开(公告)日：1978-09-05

申请号：US750387

申请日：1976-12-14

申请人： Katumi Ogiue ,  Hiroyuki Kondo ,  Takashi Ishikawa ,  Takaaki Mori ,  Takahisa Nitta

发明人： Katumi Ogiue ,  Hiroyuki Kondo ,  Takashi Ishikawa ,  Takaaki Mori ,  Takahisa Nitta

IPC分类号： H01L21/331 ,  H01L21/74 ,  H01L21/76 ,  H01L21/762 ,  H01L23/485 ,  H01L29/73 ,  H01L21/306

CPC分类号： H01L23/485 ,  H01L21/743 ,  H01L21/76208 ,  H01L21/7621 ,  H01L2924/0002

摘要： In the production of a semiconductor integrated circuit device including a selective oxidation step at a high temperature using a nitride film as a mask for isolating respective element regions in a semiconductor wafer with oxidized regions, electrode contact regions and active regions are successively formed in each element region to be surrounded by the oxidized regions and thin oxide films are formed on exposed surfaces of the electrode contact regions, the thin semiconductor oxide films are removed simultaneously by immersed etching, and then electrode metal layers are formed thereon. The thickness of the oxide layer on which the electrode metal layers are formed is maintained almost uniform to ensure the isolation effect. Since a buried region in each element region is required only to make partial contact with the contact region at the bottom portion, the integration density of the elements in the integrated circuit can be increased.

公开(公告)号：US20050250338A1

公开(公告)日：2005-11-10

申请号：US10706423

申请日：2003-11-10

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

IPC分类号： C23C16/511 ,  H01J37/32 ,  H01L21/302 ,  H01L21/316

CPC分类号： H01J37/32238 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02197 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31675 ,  H01L21/31691

摘要： A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/μ0σ)1/2, where σ, μ0 and ω respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.

摘要翻译： 设置有容器，气体供给系统和排气系统的等离子体装置。 容器由能够传输微波的材料制成的第一电介质板组成。 用于辐射微波的天线位于容器的外部，并且用于保持待处理物体的电极位于容器内部。 天线的微波辐射表面和待处理物体的表面等离子体彼此平行并相对定位。 容器的除构成第一电介质板之外的壁部分由导电率高于铝的材料的构件构成，或者壁部的内表面被构件覆盖。 该部件的厚度（d）大于（2 /μS≤Sigma）1/2，其中σ，μ0和ω 分别表示构件的导电性，真空的磁导率和从天线辐射的微波的角频率。

公开(公告)号：US20050011935A1

公开(公告)日：2005-01-20

申请号：US10805555

申请日：2004-03-19

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

IPC分类号： B23K9/16 ,  B23K1/20 ,  B23K9/23 ,  B23K35/38

CPC分类号： B23K35/383 ,  B23K1/20 ,  Y10T428/12535 ,  Y10T428/12979 ,  Y10T428/31678

摘要： The present invention provides a welding method for materials to be welded which are subjected to fluoride passivation treatment, and a fluoride passivation retreatment method, wherein, when fluoride passivation retreatment was conducted after welding, there is no generation of particles or dust, and superior resistance is provided to fluorine system gases. In the present invention, when materials to be welded comprising stainless steel subjected to fluoride passivation treatment are welded, hydrogen is added to the gas (the back shield gas) flowing through the materials to be welded. Furthermore, in the welding method for materials to be welded which are subjected to fluoride passivation treatment in accordance with the present invention, the thickness of the fluoride passivated film in a predetermined range from the butt end surfaces of the materials to be welded, comprising stainless steel subjected to a fluoride passivation treatment, is set to 10 nm or less, and welding is conducted. Furthermore, in the fluoride passivation retreatment method in accordance with the present invention, after conducting the welding method described above, at least the welded parts are heated, and a gas containing fluorine gas is caused to flow in the interior part.

摘要翻译： 本发明提供一种待进行氟化物钝化处理的待焊接材料的焊接方法，以及氟化物钝化再处理方法，其中，在焊接后进行氟化物钝化再处理时，不产生颗粒或灰尘，且具有优异的电阻 被提供给氟系气体。 在本发明中，当焊接包含不锈钢的待焊接材料进行氟化物钝化处理时，向流过待焊接材料的气体（背面保护气体）添加氢。 此外，在根据本发明的被氟化物钝化处理的待焊接材料的焊接方法中，氟化钝化膜的厚度在待焊接材料的对接端面的预定范围内，包括不锈钢 进行氟化物钝化处理的钢被设定为10nm以下，进行焊接。 此外，在本发明的氟化物钝化再处理方法中，在进行了上述的焊接方法之后，至少加热了焊接部，并且使含有氟气的气体在内部流动。

公开(公告)号：US06818320B2

公开(公告)日：2004-11-16

申请号：US09748883

申请日：2000-12-27

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

IPC分类号： B21D3900

CPC分类号： B23K35/383 ,  B23K1/20 ,  Y10T428/12535 ,  Y10T428/12979 ,  Y10T428/31678

摘要： A welding method for materials to be welded which are subjected to fluoride passivation treatment, and a fluoride passivation retreatment method, wherein, when fluoride passivation retreatment is conducted after welding, there is no generation of particles or dust. The method provides superior resistance to fluorine system gases. During fluoride passivation treatment, hydrogen is added to the gas (the back shield gas) flowing through the materials to be welded. In one embodiment of the welding method, the thickness of the fluoride passivated film in a predetermined range from the butt end surfaces of the materials to be welded is set to 10 nm or less, followed by subsequent welding. Furthermore, the fluoride passivation retreatment method, includes the steps of heating at least the welded parts following welding and flowing a gas containing fluorine gas in the interior portion of the parts.

摘要翻译： 对经过氟化物钝化处理的待焊接材料的焊接方法以及氟化物钝化再处理方法，其中，在焊接后进行氟化物钝化再处理时，不产生颗粒或灰尘。 该方法提供了优异的耐氟体系气体阻力。 在氟化物钝化处理期间，将氢气流入待焊接材料的气体（背面保护气体）。 在焊接方法的一个实施例中，氟化钝化膜在待焊接材料的对接端面的预定范围内的厚度设定为10nm以下，随后进行焊接。 此外，氟化物钝化再处理方法包括以下步骤：至少在焊接之后加热焊接部分，并且在部件的内部部分使含有氟气的气体流动。

公开(公告)号：US06733732B2

公开(公告)日：2004-05-11

申请号：US09783287

申请日：2001-02-15

申请人： Tadahiro Ohmi ,  Koji Kawada ,  Yoshikazu Tanabe ,  Takahisa Nitta ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Keiji Hirao ,  Hiroshi Morokoshi ,  Yukio Minami

发明人： Tadahiro Ohmi ,  Koji Kawada ,  Yoshikazu Tanabe ,  Takahisa Nitta ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Keiji Hirao ,  Hiroshi Morokoshi ,  Yukio Minami

IPC分类号： B01J802

CPC分类号： C01B5/00

摘要： A reactor comprising a body made of a heat-resistant material and having an inlet and an outlet for water/moisture gas, having a gas-diffusing member provided in an internal space of the body, and having a platinum coating on an internal wall surface of the body. Hydrogen and oxygen fed from the inlet are diffused by the gas-diffusing member and then come into contact with the platinum coating to enhance reactivity, thereby producing water. A temperature of the reactor is held to be below an ignition temperature of hydrogen or a hydrogen-containing gas. The platinum-coated catalyst layer on the internal wall of the reactor body is formed by treating the surface of the internal wall of the body, cleaning the treated surface, forming a barrier coating of a nonmetallic material of an oxide or nitride on the wall surface, and forming the platinum coating on the barrier coating.

摘要翻译： 一种反应器，包括由耐热材料制成并具有用于水/湿气的入口和出口的本体，其具有设置在所述主体的内部空间中的气体扩散构件，并且在内壁表面上具有铂涂层 的身体。 从入口供给的氢气和氧气被气体扩散构件扩散，然后与铂涂层接触以提高反应性，从而产生水。 反应器的温度保持在低于氢气或含氢气体的点火温度。 反应器主体内壁上的铂涂层催化剂层是通过处理体内表面，清洁处理过的表面，在壁表面上形成氧化物或氮化物的非金属材料的阻挡涂层形成的 ，并在阻挡涂层上形成铂涂层。