Abstract:
A method of producing a plurality of optoelectronic semiconductor components includes a) preparing a composite with a semiconductor layer sequence, wherein the composite includes a plurality of component areas mechanically connected to one another; b) forming a plurality of connecting surfaces on the semiconductor layer sequence, wherein at least one connecting surface is formed on each component area; c) forming a molding compound on the semiconductor layer sequence, wherein the molding compound fills interstices between the connecting surfaces; and d) singulating the composite with the molding compound, wherein during singulation a plurality of molded bodies is formed from the molding compound, each of which is associated with a semiconductor body obtained from a component area of the composite.
Abstract:
A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body has an active layer arranged between the first and second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through a first main surface, the first main surface of the component has an electrical contact layer configured to electrically contact a first semiconductor layer and in a plan view the carrier covers the first main surface in places, and in direct vicinity of the electrical contact layer the component includes a shielding structure configured to prevent electromagnetic radiation generated by the active layer from impinging onto the contact layer.
Abstract:
A method of producing an optoelectronic component includes providing an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged; arranging a protection diode on the first contact and the second contact; galvanically growing a first pin on the first electrical contact and a second pin on the second electrical contact; and embedding the first pin, the second pin, and the protection diode in a molded body.
Abstract:
A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region facing away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer.
Abstract:
An optoelectronic semiconductor chip is disclosed. The optoelectronic semiconductor chip includes a semiconductor layer sequence having an active zone suitable for emitting radiation, a carrier substrate, and a mirror layer, the mirror layer being arranged between the semiconductor layer sequence and the carrier substrate, wherein the semiconductor layer sequence is subdivided into a plurality of active regions arranged alongside one another, wherein the plurality of active regions are separated from one another in each case by a trench in the semiconductor layer sequence, wherein the trench in each case severs the semiconductor layer sequence and the mirror layer, wherein the mirror layer has side surfaces facing a trench and side surfaces facing an outer side of the semiconductor chip, wherein the side surfaces of the mirror layer that face an outer side of the semiconductor chip have a metallic encapsulation layer.