Radiation-emitting semiconductor chip
    34.
    发明授权
    Radiation-emitting semiconductor chip 有权
    辐射发射半导体芯片

    公开(公告)号:US09590008B2

    公开(公告)日:2017-03-07

    申请号:US14702807

    申请日:2015-05-04

    Abstract: A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region facing away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer.

    Abstract translation: 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体,其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 半导体层序列包括产生辐射并且被布置在第一半导体层和第二半导体层之间的有源区; 第一半导体层布置在有源区域背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层,其中第一连接层在凹部中从第一半导体层向载体延伸; 在发射区域中的第二半导体层导电地连接到第二连接层。

    Optoelectronic Semiconductor Chip Having a Plurality of Active Regions Arranged Alongside One Another
    35.
    发明申请
    Optoelectronic Semiconductor Chip Having a Plurality of Active Regions Arranged Alongside One Another 有权
    具有多个有源区域的光电半导体芯片彼此排列

    公开(公告)号:US20150270458A1

    公开(公告)日:2015-09-24

    申请号:US14428333

    申请日:2013-09-19

    Abstract: An optoelectronic semiconductor chip is disclosed. The optoelectronic semiconductor chip includes a semiconductor layer sequence having an active zone suitable for emitting radiation, a carrier substrate, and a mirror layer, the mirror layer being arranged between the semiconductor layer sequence and the carrier substrate, wherein the semiconductor layer sequence is subdivided into a plurality of active regions arranged alongside one another, wherein the plurality of active regions are separated from one another in each case by a trench in the semiconductor layer sequence, wherein the trench in each case severs the semiconductor layer sequence and the mirror layer, wherein the mirror layer has side surfaces facing a trench and side surfaces facing an outer side of the semiconductor chip, wherein the side surfaces of the mirror layer that face an outer side of the semiconductor chip have a metallic encapsulation layer.

    Abstract translation: 公开了一种光电半导体芯片。 光电子半导体芯片包括具有适于发射辐射的有源区的半导体层序列,载体衬底和镜像层,镜层布置在半导体层序列和载体衬底之间,其中半导体层序列被细分为 多个有源区域彼此并排布置,其中多个有源区域在每种情况下都分别由半导体层序列中的沟槽分开,其中沟槽在每种情况下都分开半导体层序列和镜面层,其中 镜层具有面向沟槽的侧表面和面向半导体芯片的外侧的侧表面,其中面对半导体芯片的外侧的镜面层的侧表面具有金属封装层。

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