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31.发明申请Light emission from silicon-based nanocrystals by sequential thermal annealing approaches 审中-公开通过连续热退火方法从硅基纳米晶体发射光公开(公告)号：US20080139004A1
公开(公告)日：2008-06-12
申请号：US11637405
申请日：2006-12-12
IPC分类号： H01L21/64
CPC分类号： H05B33/10
摘要： A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. A first annealing step is performed at a first temperature in a processing chamber or annealing furnace; and, thereafter, a second annealing step is performed at a second temperature in the processing chamber or annealing furnace. The second temperature is greater than the first temperature, and the photoluminescence of the film after the second annealing step is greater than the photoluminescence of the film without the first annealing step.
摘要翻译： 一种用于增强光致发光的方法包括提供设置在衬底上的膜，所述膜包括半导体和电介质材料中的至少一种。 在处理室或退火炉中的第一温度下进行第一退火步骤; 之后，在处理室或退火炉中，在第二温度下进行第二退火工序。 第二温度大于第一温度，第二退火步骤后的膜的光致发光比没有第一退火步骤的膜的光致发光大。
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公开(公告)号：US07310454B2
公开(公告)日：2007-12-18
申请号：US10852386
申请日：2004-05-24
申请人： Shoji Akiyama , Lionel C. Kimerling , Kazumi Wada
发明人： Shoji Akiyama , Lionel C. Kimerling , Kazumi Wada
CPC分类号： G02F1/21 , G02F1/3136 , G02F2001/213 , G02F2202/32
摘要： An optical device includes at least two photonic bandgap crystal (PBG) stacks that are each comprised of alternating layers of high and low index materials. A defect region is formed in a cavity region between the at least two photonic bandgap crystal stacks so as to provide the properties needed to reflect light received by the optical device.
摘要翻译： 光学器件包括至少两个光子带隙晶体（PBG）堆叠，每个由高和低折射率材料的交替层组成。 在所述至少两个光子带隙晶体堆叠之间的空腔区域中形成缺陷区域，以便提供反射由光学器件接收的光所需的特性。
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33.发明授权公开(公告)号：US07123805B2
公开(公告)日：2006-10-17
申请号：US10869636
申请日：2004-06-16
CPC分类号： G02B6/122 , G02B6/13 , G02B6/136 , G02B2006/12097
摘要： The light-guiding structure includes a waveguide structure that comprises a substrate and a low refractive index underclad material. The waveguide structure is oxidized to form an oxidized layer on a surface of the waveguide structure. The oxidized layer is isotropically etched after the reaction-limited oxidation regime is approaching the diffusion-limited regime and repeatedly oxidized and etched so that the waveguide structure is continuously oxidized in the reaction-limited regime, reducing the overall time of oxidation and volume of oxidized material so that the waveguide structure has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.
摘要翻译： 导光结构包括波导结构，其包括基底和低折射率底层材料。 波导结构被氧化以在波导结构的表面上形成氧化层。 在反应限制氧化态接近扩散限制状态后，氧化层进行各向同性蚀刻，并被反复氧化和蚀刻，使得波导结构在反应限制状态下连续氧化，减少氧化的总时间和氧化的体积 材料，使得波导结构的侧壁粗糙度有效地降低，导致导光的高透射率。
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公开(公告)号：US07068862B2
公开(公告)日：2006-06-27
申请号：US09961571
申请日：2001-09-21
IPC分类号： G02F1/035
CPC分类号： G02B6/1223 , G02B6/105 , G02B6/12007 , G02B6/122 , G02B6/126 , G02B6/132 , G02B6/3536 , G02F1/011 , G02F1/0134 , G02F1/0147 , G02F1/3132 , G02F2203/15
摘要： Methods of tuning, switching or modulating, or, in general, changing the resonance of waveguide micro-resonators. Changes in the resonance can be brought about, permanently or temporarily, by changing the size of the micro-resonator with precision, by changing the local physical structure of the device or by changing the effective and group indices of refraction of the mode in the micro-resonator. Further changing the asymmetry of the index profile around a waveguide can alter the birefringence of the waveguide and allows one to control the polarization in the waveguide. This change in index profile may be used to change the polarization dependence or birefringence of the resonators.
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公开(公告)号：US06946318B2
公开(公告)日：2005-09-20
申请号：US10952055
申请日：2004-09-28
IPC分类号： H01L31/10 , H01L21/00 , H01L27/04 , H01L27/14 , H01L27/146 , H01L27/15 , H01L29/06 , H01L31/028 , H01L31/18
CPC分类号： H01L27/146 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L31/103 , H01L31/1808 , H01L31/1864 , H01L31/1872 , Y02E10/50 , Y02P70/521 , Y10S438/933
摘要： A photodetector device includes a plurality of Ge epilayers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows the photodetector device to operate efficiently in the C-band and L-band.
摘要翻译： 光电检测器装置包括多个Ge外延层，其在衬底上生长并在限定的温度范围内退火。 Ge外延层形成拉伸应变Ge层，其允许光电检测器件在C波段和L波段中有效地工作。
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公开(公告)号：US06859571B2
公开(公告)日：2005-02-22
申请号：US10281459
申请日：2002-10-25
申请人： Lionel C. Kimerling
发明人： Lionel C. Kimerling
CPC分类号： G02B6/4201 , G02B6/42 , G02B6/43 , H01L23/66 , H01L2224/16 , H01L2924/3011
摘要： A system of integrating electronic and optical functions includes an electronic chip that also includes monolithic IC electronics for performing electronic functions. Furthermore, the electronic chip includes a plurality of solder bumps for receiving input for processing. An optical chip receives an optical signal and performs optical functions on the signal, and outputs electrical signals indicative of the optical functions performed on the signal. Moreover, the optical chip includes a plurality of solder bumps for sending the electrical signals as input to the electronic chip. The solder bumps of the electronic chip and optical chip are bonded to together so that a hybrid integration is formed that separates the yield of the optical and electrical circuits forming the electronic and optical chip.
摘要翻译： 集成电子和光学功能的系统包括还包括用于执行电子功能的单片IC电子器件的电子芯片。 此外，电子芯片包括用于接收用于处理的输入的多个焊料凸块。 光学芯片接收光信号并对该信号执行光学功能，并且输出指示对该信号执行的光学功能的电信号。 此外，光学芯片包括用于将电信号作为输入发送到电子芯片的多个焊料凸块。 电子芯片和光学芯片的焊料凸块被结合在一起，从而形成了分离形成电子和光学芯片的光学和电路的成品率的混合集成。
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公开(公告)号：US06846509B2
公开(公告)日：2005-01-25
申请号：US09991438
申请日：2001-11-21
申请人： Kevin M. Chen , Lionel C. Kimerling
发明人： Kevin M. Chen , Lionel C. Kimerling
CPC分类号： C23C14/5806 , C03C17/3417 , C03C2217/228 , C09K11/7701 , C23C14/024 , C23C14/08
摘要： A system for producing Erbium Oxide thin films with increased photoluminescence. The system includes a depositing stage for forming Erbium Oxide molecules by reacting Erbium sputtered atoms with O2 in a gas phase and creating the Erbium Oxide thin film by depositing the Erbium Oxide molecules on a substrate coated with Silicon Oxide. The system further includes an annealing stage for annealing the Erbium Oxide thin films by utilizing a low temperature treatment for a specified amount of time and temperature followed by a high temperature treatment for another specified amount of time and temperature, wherein the crystallinity of the thin films has improved.
摘要翻译： 一种用于生产具有增加的光致发光的铒氧化物薄膜的系统。 该系统包括用于通过使铒溅射的原子与气相中的O 2反应形成铒氧化物分子的沉积阶段，并通过在涂覆有氧化硅的基底上沉积氧化铒分子来产生铒氧化物薄膜。 该系统还包括退火阶段，用于通过在规定时间和温度下进行低温处理，随后进行另一特定时间和温度的高温处理来退火氧化铒薄膜，其中薄膜的结晶度 提高了。
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38.发明授权
公开(公告)号：US5107538A
公开(公告)日：1992-04-21
申请号：US711243
申请日：1991-06-06
IPC分类号： G02B6/12 , G02F1/35 , H01L33/00 , H01L33/34 , H01S3/10 , H01S3/16 , H01S5/00 , H01S5/042 , H01S5/30 , H01S5/50
CPC分类号： H01L33/343 , H01S5/50 , H01S3/1603 , H01S3/1608 , H01S3/1628 , H01S5/3068
摘要： It has been discovered that co-doping of Er-doped Si with a light element such as C, N or F can result in substantially increased Er luminescence. A further increase in luminescence can result if, in addition, oxygen is present in the Si. Apparatus or systems according to the invention comprise a device (e.g., laser, optical ampifier, LED) that comprises a planar waveguide whose core region contains, in addition to at least 90 atomic % Si or SiGe alloy, Er, Pr and/or Nd, and further contains C, N and/or F, and preferably also contains oxygen. Currently preferred apparatus or systems according to the invention comprise means for electrically pumping the waveguide means.
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公开(公告)号：US4238694A
公开(公告)日：1980-12-09
申请号：US799456
申请日：1977-05-23
IPC分类号： G11C13/04 , G11C16/04 , G11C17/16 , H01L21/263 , H01L21/324
CPC分类号： H01L21/263 , G11C13/047 , G11C16/04 , G11C17/16 , H01L21/3245 , Y10S148/046 , Y10S148/055 , Y10S148/093
摘要： The rate at which radiation defects in semi-conductors are annealed is enhanced by various electronic mechanisms. These effects can be used to program device arrays in which all devices are initially damaged, then selected devices are activated by addressing them electrically through the individual device contacts.
摘要翻译： 半导体中的辐射缺陷退火的速率通过各种电子机制增强。 这些效果可用于对所有器件最初损坏的器件阵列进行编程，然后通过各个器件触点对器件阵列进行电气寻址来激活所选器件。
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公开(公告)号：US08203155B2
公开(公告)日：2012-06-19
申请号：US12815820
申请日：2010-06-15
CPC分类号： H01L31/035236 , B82Y20/00 , G01J3/2823
摘要： A multispectral pixel structure is provided that includes a plurality of stacked cavity arrangements for emitting or detecting a plurality of specified wavelengths, wherein each stacked cavity arrangement having a photoactive layer for spectral emission or detection of one of the specified wavelengths. The photoactive layer is positioned within a resonant cavity stack and the resonant cavity stack being positioned between two adjacent mirror stacks. A plurality of coupling-matching layers are positioned between one or more of the stack mirror arrangements for controlling optical phase and coupling strength between emitted or incident light and resonant modes in each of the stacked cavity arrangements.
摘要翻译： 提供了一种多光谱像素结构，其包括用于发射或检测多个指定波长的多个堆叠的空腔结构，其中每个堆叠的空腔布置具有用于光谱发射或检测指定波长之一的光敏层。 光敏层定位在谐振腔堆叠内，并且谐振腔堆叠位于两个相邻的反射镜叠层之间。 多个耦合匹配层位于一个或多个堆叠反射镜装置之间，用于控制每个堆叠空腔布置中发射或入射光与谐振模式之间的光学相位和耦合强度。
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