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    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD
    32.
    发明申请
    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 审中-公开
    具有电极板的发光二极管芯片

    公开(公告)号：US20170047483A1

    公开(公告)日：2017-02-16

    申请号：US15336510

    申请日：2016-10-27

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

    IPC: H01L33/38 ,  H01L33/20 ,  H01L33/08 ,  H01L33/46 ,  H01L33/62 ,  H01L33/14 ,  H01L33/42

    CPC classification number: H01L33/36 ,  H01L33/08 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

    Abstract translation: 本文公开了包括电极焊盘的LED芯片。 LED芯片包括：第一导电型半导体层，第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

    LIGHT-EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY
    34.
    发明申请
    LIGHT-EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
    具有改进的光提取效率的发光二极管

    公开(公告)号：US20150280074A1

    公开(公告)日：2015-10-01

    申请号：US14740131

    申请日：2015-06-15

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

    IPC: H01L33/40 ,  H01L33/38 ,  H01L33/22 ,  H01L33/42

    CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

    Abstract translation: 根据本发明，具有提高光提取效率的发光二极管包括：包括形成在基板上的N层，发光层和P层的半导体层叠结构; 形成在N层上的N型电极; 和形成在P层上的P型电极，其中，所述N型电极和所述P型电极包括焊盘电极和分散电极，并且所述N型电极和/或所述P型电极包括： 用于将光反射到分散电极上的反射电极层。 因此，发光二极管在电极上具有反射电极层，以提高光提取效率。 此外，反射层在垫单元下方被图案化，从而形成粗糙度并改善粘附性。

    LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY
    36.
    发明申请
    LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY 审中-公开
    发光二极管具有提高的光效

    公开(公告)号：US20140299905A1

    公开(公告)日：2014-10-09

    申请号：US14309658

    申请日：2014-06-19

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jeong Hee YANG ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Duk Il Suh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong

    IPC: H01L33/42 ,  H01L33/38

    CPC classification number: H01L33/385 ,  H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0091

    Abstract: A light-emitting diode includes a substrate, and a light-emitting structure disposed on the substrate. The light-emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including concave portions and convex portions is disposed on the second conductivity-type semiconductor layer. Micro-lenses are disposed on the transparent electrode layer and completely cover the concave portions, and only partially cover the convex portions that are disposed between the micro-lenses.

    Abstract translation: 发光二极管包括基板和设置在基板上的发光结构。 发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。 包括凹部和凸部的透明电极层设置在第二导电型半导体层上。 微透镜设置在透明电极层上并完全覆盖凹部，并且仅部分地覆盖设置在微透镜之间的凸部。

    Light emitting element
    38.
    发明授权
    Light emitting element 审中-公开

    公开(公告)号：US10672951B2

    公开(公告)日：2020-06-02

    申请号：US15843847

    申请日：2017-12-15

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Duk Il Suh ,  Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

    IPC: H01L33/24 ,  H01L33/42 ,  H01L33/38 ,  H01L33/22 ,  H01L33/14 ,  H01L23/00

    Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

    Compact light emitting diode chip and light emitting device including the same
    40.
    发明授权
    Compact light emitting diode chip and light emitting device including the same 有权

    公开(公告)号：US10107458B2

    公开(公告)日：2018-10-23

    申请号：US15852704

    申请日：2017-12-22

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

    IPC: F21K9/232 ,  G06F1/16 ,  H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H05K1/18 ,  H01L33/38 ,  F21Y107/70

    Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.

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