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公开(公告)号:US20240321666A1
公开(公告)日:2024-09-26
申请号:US18675881
申请日:2024-05-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jinwoo Park , Jongho Lee , Yeongkwon Ko
CPC classification number: H01L23/3157 , H01L21/568 , H01L23/293 , H01L23/49816 , H01L23/49827 , H01L24/16 , H01L25/18 , H01L25/50 , H01L2224/1012 , H01L2224/14 , H01L2224/16225 , H01L2224/8185
Abstract: A method of manufacture for a semiconductor package includes; forming a molding member on side surfaces of the semiconductor chips, using an adhesive to attach a carrier substrate to upper surfaces of the molding member and the semiconductor chips, using a first blade having a first blade-width to cut away selected portions of the carrier substrate and portions of the adhesive underlying the selected portions of the carrier substrate, and using the first blade to partially cut into an upper surface of the molding member to form a first cutting groove, wherein the selected portions of the carrier substrate are dispose above portions of the molding member between adjacent ones of semiconductor chips, using a second blade having a second blade-width narrower than the first blade-width to cut through a lower surface of the molding member to form a second cutting groove, wherein a combination of the first cutting groove and the second cutting groove separate a package structure including a semiconductor chip supported by a cut portion of the carrier substrate and bonding the package structure to an upper surface of a package substrate.
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公开(公告)号:US12073909B2
公开(公告)日:2024-08-27
申请号:US18085963
申请日:2022-12-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongsung Cho , Jinwoo Park , Hyunjun Yoon , Yoonhee Choi
CPC classification number: G11C7/065 , G11C7/1039 , G11C7/1057 , G11C7/1084 , G11C16/3404
Abstract: A memory device includes a memory cell array, a page buffer circuit, and a counting circuit. The page buffer circuit includes a first and second page buffer columns connected to the memory cell array. The first page buffer column includes a first page buffer unit and the second page buffer column includes a second page buffer unit in a first stage. The first page buffer unit performs a first sensing operation in response to a first sensing signal, and the second page buffer unit performs a second sensing operation in response to a second sensing signal. The counting circuit counts a first number of memory cells included in a first threshold voltage region from a result of the first sensing operation, and counts a second number of memory cells included in a second threshold voltage region from a result of the second sensing operation.
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公开(公告)号:US11842790B2
公开(公告)日:2023-12-12
申请号:US18125260
申请日:2023-03-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongsung Cho , Inho Kang , Taehyo Kim , Jeunghwan Park , Jinwoo Park
CPC classification number: G11C7/1039 , G11C7/1048 , G11C7/1057 , G11C7/1084 , G11C7/12
Abstract: Provided are a page buffer and a memory device including the same. A memory device includes: a memory cell array including a plurality of memory cells; and a page buffer circuit including page buffer units in a first horizontal direction, the page buffer units being connected to the memory cells via bit lines, and cache latches in the first horizontal direction, the cache latches corresponding to the page buffer units, wherein each of the page buffer units includes one or more pass transistors connected to a sensing node of each of the plurality of page buffer units, the sensing node electrically connected to a corresponding bit line. Each sensing node included in each of the page buffer units and the combined sensing node are electrically connected to each other through the pass transistors.
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公开(公告)号:US20230395403A1
公开(公告)日:2023-12-07
申请号:US18134718
申请日:2023-04-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinwoo Park , Myungsung Kang , Jaekyung Yoo , Unbyoung Kang , Chungsun Lee
IPC: H01L21/67
CPC classification number: H01L21/67126
Abstract: A molding apparatus for a semiconductor package includes a chamber including a lower mold configured to hold a substrate including a plurality of molding targets, an upper mold configured to move up and down with respect to the lower mold and define a cavity between the upper mold and the lower mold, and a port configured to provide a passage communicating with the cavity, a molding material supplier configured to supply a molding material to the port, a plunger configured to pressurize the molding material inside the port, a plunger actuator configured to apply a first pressure to the plunger such that the molding material provided in the port is supplied to the cavity, and a mold actuator configured to control actuation of the upper mold. The plunger actuator is configured to supply the molding material to the cavity by applying the first pressure to the plunger, and the mold actuator is configured to pressurize the molding material in the cavity by applying a second pressure to the upper mold. The mold apparatus further includes a controller configured to control the plunger actuator to reduce the first pressure applied to the plunger after the mold actuator begins applying the second pressure to the upper mold.
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公开(公告)号:US20230385185A1
公开(公告)日:2023-11-30
申请号:US18198577
申请日:2023-05-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jicheon Kim , Jinwoo Park , Yeonho Jeong , Seonil Brian Choi
IPC: G06F11/36
CPC classification number: G06F11/3684 , G06F11/3692
Abstract: A method of simulating an integrated circuit includes providing at least one test case to a simulation tool, obtaining at least one first simulation result and at least one first simulation log from the simulation tool, classifying, with a first machine learning model, the at least one test case into one fail class of a plurality of fail classes, generating at least one renewed test case by applying, with a controller, a solution to the at least one test case, and providing the at least one renewed test case to the simulation tool.
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公开(公告)号:US11811008B2
公开(公告)日:2023-11-07
申请号:US17154632
申请日:2021-01-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Inho Kim , Yongmin Kwon , Sanghyun Kim , Jinwoo Park , Dongyeoul Lee , Dongju Lee , Sangbum Lee , Jonghyun Lee , Dahyun Choi
IPC: H01L33/62 , H01L27/15 , H01L33/22 , H01L33/38 , H01L33/46 , H01L33/50 , H01L33/58 , H01L33/64 , F21K9/23 , F21K9/27
CPC classification number: H01L33/62 , H01L27/156 , H01L33/22 , H01L33/382 , H01L33/46 , H01L33/50 , H01L33/58 , H01L33/642 , F21K9/23 , F21K9/27 , H01L2933/0016 , H01L2933/0025 , H01L2933/0041 , H01L2933/0066
Abstract: A light source module includes a light-emitting cell, a wiring structure provided on the light-emitting cell and connected to the light-emitting cell, a support structure that is apart from the light-emitting cell with the wiring structure therebetween in a vertical direction, a printed circuit board (PCB) that is apart from the wiring structure with the support substrate therebetween in the vertical direction and overlapping the light-emitting cell in the vertical direction, and at least one insulating film that is apart from the wiring structure in the vertical direction and covering at least one of a first surface of the support substrate, which faces the wiring structure, and a second surface of the support substrate, which faces the PCB.
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37.
公开(公告)号:US11200955B2
公开(公告)日:2021-12-14
申请号:US16734799
申请日:2020-01-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Won-Taeck Jung , Sang-Wan Nam , Jinwoo Park , Jaeyong Jeong
IPC: G11C16/10 , G11C16/20 , G11C16/08 , G11C16/34 , G11C16/04 , H01L27/11582 , H01L27/11524 , H01L27/1157 , H01L27/11556
Abstract: A three-dimensional (3D) nonvolatile memory device includes a cell string. The cell string includes a pillar structure comprising a ground selection transistor, a plurality of memory cells, and a string selection transistor stacked vertically over a substrate. The memory cells comprise a first cell group and a second cell group stacked on the first cell group, and a horizontal width of at least a portion of the pillar structure decreases in a depth direction towards the substrate. A method of programming the memory device includes initializing a channel of a memory cell of the first cell group of the cell string through the ground selection transistor of the pillar structure, and then applying a program voltage to the memory cell of the pillar structure of the cell string.
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38.
公开(公告)号:US10726258B2
公开(公告)日:2020-07-28
申请号:US16013475
申请日:2018-06-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinwoo Park , Min-Soo Kim , Jae-Il Seo , Soonwoong Yang , Kyujin Kwak , Kijae Kim , Jin-Wan An
Abstract: An electronic device is provided. The electronic device includes a housing including a front plate and a rear plate; a touch screen display operably coupled to the front plate; at least one through-hole operably disposed on the front plate; and an imaging sensor assembly facing the front plate at an acute angle with respect to the front plate. The imaging sensor assembly includes a barrel at least partially disposed in the through-hole; a plurality of lenses disposed inside the barrel; a sensor housing surrounding at least part of an outer surface of the barrel; an image sensor assembly comprising an image sensor disposed inside the sensor housing; and a processor electrically coupled to the image sensor and configured to detect an iris image.
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公开(公告)号:US20200032228A1
公开(公告)日:2020-01-30
申请号:US16378341
申请日:2019-04-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yukyung Jung , Taeyong Kim , Jinwoo Park , Joonsong Park , Jinsuk Lee , Changduk Kang , Jongwon Byun , Seunghoon Song
IPC: C12N9/14 , C12N15/52 , C12N15/70 , C12N15/74 , C07K14/195
Abstract: Provided are a variant of a haloacid dehalogenase superfamily protein, a polynucleotide encoding the variant, a recombinant microorganism including the variant, and a method of reducing a concentration of a fluorine-containing compound in a sample using the variant.
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公开(公告)号:US10085180B2
公开(公告)日:2018-09-25
申请号:US15408895
申请日:2017-01-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinwoo Park , Jaemo Yang , Gangyoul Kim , Beakkwon Son , Chulmin Choi , Hochul Hwang
IPC: G10L19/008 , H04W36/00
CPC classification number: H04W36/0016 , G10L19/008
Abstract: An electronic device and a method for converting a call type of the electronic device are provided. Accordingly, it is possible to provide optimal sound quality and impression of space to a user while providing an optimal stereo call service by upmixing a mono signal to a stereo signal even if stereo call is converted into mono call due to the environment change like a handover while the electronic device performs stereo call with an external electronic device.
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