公开(公告)号：US20170287940A1

公开(公告)日：2017-10-05

申请号：US15622255

申请日：2017-06-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Tomoaki MORIWAKA

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696

Abstract: A wiring having excellent electrical characteristics is provided. A wiring having stable electrical characteristics is provided. A device is manufactured through the steps of forming a first insulating film over a substrate, forming a second insulating film over the first insulating film, removing part of the first insulating film and part of the second insulating film to form a first opening, forming a first conductor in the first opening and over a top surface of the second insulating film, and forming a second conductor by planarizing a surface of the first conductor so as to remove part of the first conductor.

公开(公告)号：US20170243899A1

公开(公告)日：2017-08-24

申请号：US15591145

申请日：2017-05-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Yuichi SATO ,  Yuji ASANO ,  Tetsunori MARUYAMA ,  Tatsuya ONUKI ,  Shuhei NAGATSUKA

IPC: H01L27/12 ,  H01L23/485 ,  H01L23/522 ,  H01L21/8258 ,  H01L27/06 ,  H01L29/786 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L27/1225 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76885 ,  H01L21/8258 ,  H01L23/481 ,  H01L23/485 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53295 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1207 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/16 ,  H01L29/45 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device with excellent electrical characteristics or a semiconductor device with stable electrical characteristics. A semiconductor device includes a first transistor, a second transistor, a first insulator, a second insulator, a first wiring, and a first plug. The first transistor includes silicon. The second transistor includes an oxide semiconductor. The first insulator is located over the first transistor. The second insulator is located over the first insulator. The second transistor is located over the second insulator. The first wiring is located over the second insulator and the first plug. The first transistor and the second transistor are electrically connected to each other through the first wiring and the first plug. The first wiring has low hydrogen permeability. The hydrogen permeability of the second insulator is lower than the hydrogen permeability of the first insulator.

公开(公告)号：US20170117299A1

公开(公告)日：2017-04-27

申请号：US15386017

申请日：2016-12-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Motomu KURATA ,  Shinya SASAGAWA ,  Ryota HODO ,  Katsuaki TOCHIBAYASHI ,  Tomoaki MORIWAKA ,  Jiro NISHIDA ,  Hidekazu MIYAIRI ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L27/13 ,  H01L21/84 ,  H01L23/522

Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

公开(公告)号：US20170033228A1

公开(公告)日：2017-02-02

申请号：US15229363

申请日：2016-08-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/016 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/15 ,  H01L27/3225 ,  H01L27/3241 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78618

Abstract: In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.

Abstract translation: 在有源矩阵显示装置中，包括在电路中的薄膜晶体管的电特性是重要的，显示装置的性能取决于电特性。 因此，通过使用包括In，Ga和Zn的氧化物半导体膜用于反向交错薄膜晶体管，可以减小薄膜晶体管的电特性的变化。 通过溅射法连续地形成三层栅极绝缘膜，氧化物半导体层和沟道保护层，而不暴露于空气。 此外，在氧化物半导体层中，与沟道保护膜重叠的区域的厚度大于与导电膜接触的区域的厚度。

公开(公告)号：US20170025546A1

公开(公告)日：2017-01-26

申请号：US15286194

申请日：2016-10-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Chiho KOKUBO ,  Aiko SHIGA ,  Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Koichiro TANAKA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC classification number: H01L29/78675 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757

Abstract: A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.

Abstract translation: 首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。 在一条或多条线路中聚光的连续波激光束用于激光束。 蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。 半导体区域的第二形状被设置成在从多个凸起端部延伸的各个晶体区域上形成沟道形成范围。 消除了与沟道形成区域相邻的半导体区域。

公开(公告)号：US20160372608A1

公开(公告)日：2016-12-22

申请号：US15254529

申请日：2016-09-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Yasuo NAKAMURA

IPC: H01L29/786 ,  H01L29/49

CPC classification number: H01L29/78696 ,  H01L21/02323 ,  H01L21/02565 ,  H01L21/32139 ,  H01L21/465 ,  H01L21/467 ,  H01L21/4763 ,  H01L21/47635 ,  H01L27/1225 ,  H01L29/0692 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/263 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

公开(公告)号：US20160276370A1

公开(公告)日：2016-09-22

申请号：US15072076

申请日：2016-03-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Yuichi SATO ,  Yuji ASANO ,  Tetsunori MARUYAMA ,  Tatsuya ONUKI ,  Shuhei NAGATSUKA

IPC: H01L27/12 ,  H01L23/528 ,  H01L29/16 ,  H01L23/532 ,  H01L29/78 ,  H01L29/786 ,  H01L23/522

CPC classification number: H01L27/1225 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76885 ,  H01L21/8258 ,  H01L23/481 ,  H01L23/485 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53295 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1207 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/16 ,  H01L29/45 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device with excellent electrical characteristics or a semiconductor device with stable electrical characteristics. A semiconductor device includes a first transistor, a second transistor, a first insulator, a second insulator, a first wiring, and a first plug. The first transistor includes silicon. The second transistor includes an oxide semiconductor. The first insulator is located over the first transistor. The second insulator is located over the first insulator. The second transistor is located over the second insulator. The first wiring is located over the second insulator and the first plug. The first transistor and the second transistor are electrically connected to each other through the first wiring and the first plug. The first wiring has low hydrogen permeability. The hydrogen permeability of the second insulator is lower than the hydrogen permeability of the first insulator.

Abstract translation: 提供具有优异电气特性的半导体器件或具有稳定电特性的半导体器件。 半导体器件包括第一晶体管，第二晶体管，第一绝缘体，第二绝缘体，第一布线和第一插塞。 第一晶体管包括硅。 第二晶体管包括氧化物半导体。 第一绝缘体位于第一晶体管的上方。 第二绝缘体位于第一绝缘体之上。 第二晶体管位于第二绝缘体上。 第一布线位于第二绝缘体和第一插头上。 第一晶体管和第二晶体管通过第一布线和第一插头彼此电连接。 第一布线具有低的透气性。 第二绝缘体的氢渗透性低于第一绝缘体的氢渗透性。

公开(公告)号：US20160268261A1

公开(公告)日：2016-09-15

申请号：US15163799

申请日：2016-05-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Shunpei YAMAZAKI

IPC: H01L27/105 ,  H01L29/24 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1052 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/78651 ,  H01L29/78654 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device that is suitable for miniaturization is provided. Alternatively, a highly reliable semiconductor device is provided. A semiconductor device including a capacitor and a transistor is provided. In the semiconductor device, the transistor includes a semiconductor layer, the semiconductor layer is positioned over the capacitor, and the capacitor includes a first electrode that is electrically connected to the transistor.

公开(公告)号：US20160233235A1

公开(公告)日：2016-08-11

申请号：US15011848

申请日：2016-02-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Tomoaki MORIWAKA

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696

Abstract: A wiring having excellent electrical characteristics is provided. A wiring having stable electrical characteristics is provided. A device is manufactured through the steps of forming a first insulating film over a substrate, forming a second insulating film over the first insulating film, removing part of the first insulating film and part of the second insulating film to form a first opening, forming a first conductor in the first opening and over a top surface of the second insulating film, and forming a second conductor by planarizing a surface of the first conductor so as to remove part of the first conductor.

Abstract translation: 提供具有优异电特性的布线。 提供具有稳定电特性的布线。 通过以下步骤制造器件：在衬底上形成第一绝缘膜，在第一绝缘膜上形成第二绝缘膜，去除第一绝缘膜的一部分和第二绝缘膜的一部分以形成第一开口，形成第 在第一开口中的第一导体和第二绝缘膜的顶表面之上，并且通过使第一导体的表面平坦化以形成第二导体，以便去除第一导体的一部分。

公开(公告)号：US20150323823A1

公开(公告)日：2015-11-12

申请号：US14711275

申请日：2015-05-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Takeshi OSADA ,  Hidekazu MIYAIRI ,  Yasuhiro JINBO

IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1365

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/1365 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/78648 ,  Y10T428/24331

Abstract: A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit.

Abstract translation: 提供了一种可以缩小框架并且显示特性优异的显示装置。 在包括开关部分或缓冲部分，逻辑电路部分和像素部分的显示装置中，像素部分包括连接到第一反交错TFT的布线的第一反交错TFT和像素电极， 开关部分或缓冲部分包括其中第一绝缘层，半导体层和第二绝缘层插入在第一栅电极和第二栅电极之间的第二反交错TFT，所述逻辑电路部分包括逆变器电路，包括 第三反交错薄膜晶体管和第四反交错薄膜晶体管，并且第一至第四反交错薄膜晶体管具有相同的极性。 逆变器电路可以是EDMOS电路。