公开(公告)号：US10355171B2

公开(公告)日：2019-07-16

申请号：US16003782

申请日：2018-06-08

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/20 ,  H01L33/38

Abstract: A light emitting diode including a first conductive type semiconductor layer; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; an electrode disposed on the mesa and configured to be in ohmic-contact with the corresponding second conductive type semiconductor layer of the mesa, a current spreading layer disposed on the mesa and the electrode and including a first portion, a second portion, and a third portion configured to be in ohmic-contact with a first end portion, a second end portion, and a middle portion of the first conductive type semiconductor layer, respectively, an insulation layer disposed on the mesa and the first conductive type semiconductor layer and having a first region having a thickness that varies along a longitudinal direction of the first semiconductor layer.

公开(公告)号：US10297720B2

公开(公告)日：2019-05-21

申请号：US14920790

申请日：2015-10-22

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Daewoong Suh ,  Dae Sung Cho ,  Joon Sup Lee ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/08 ,  H01L33/40 ,  H01L33/22 ,  H01L33/20 ,  H01L33/38 ,  H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01L33/44 ,  H01L33/12 ,  H01L33/42 ,  H01L33/46 ,  H01L33/48 ,  H01L33/62

Abstract: The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided.

公开(公告)号：US20180145217A1

公开(公告)日：2018-05-24

申请号：US15860599

申请日：2018-01-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang

IPC: H01L33/24 ,  H01L33/46 ,  H01L33/50 ,  H01L33/40 ,  H01L33/60

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: Described are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.

公开(公告)号：US20180114879A1

公开(公告)日：2018-04-26

申请号：US15838264

申请日：2017-12-11

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Se Hee Oh ,  Hyun A Kim

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/16225

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

公开(公告)号：US20180108704A1

公开(公告)日：2018-04-19

申请号：US15835326

申请日：2017-12-07

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Hyun A. Kim ,  Won Young Roh ,  Min Woo Kang

IPC: H01L27/15

Abstract: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.

公开(公告)号：US09520546B2

公开(公告)日：2016-12-13

申请号：US15186358

申请日：2016-06-17

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang

IPC: H01L33/00 ,  H01L27/15 ,  H01L29/22 ,  H01L21/00 ,  H01L33/62 ,  H01L33/14 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/50

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.

公开(公告)号：US09520543B2

公开(公告)日：2016-12-13

申请号：US14848262

申请日：2015-09-08

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang

IPC: H01L27/15 ,  H01L29/22 ,  H01L21/00 ,  H01L33/62 ,  H01L33/00 ,  H01L33/14 ,  H01L33/38 ,  H01L33/50 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.

Abstract translation: 公开了一种发光二极管和发光二极管模块。 发光二极管模块包括通过焊膏与其连接的印刷电路板和发光二极管。 发光二极管包括电连接到第一导电类型半导体层的第一电极焊盘和连接到第二导电类型半导体层的第二电极焊盘，其中第一电极焊盘和第二电极焊盘中的每一个包括至少五对 Ti / Ni层或至少5对Ti / Cr层和Au的最上层。 因此，防止焊膏中的诸如Sn的金属元素扩散，从而提供可靠的发光二极管模块。

公开(公告)号：US20160293818A1

公开(公告)日：2016-10-06

申请号：US15186358

申请日：2016-06-17

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang

IPC: H01L33/62 ,  H01L33/00 ,  H01L33/50 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L27/15 ,  H01L33/14

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.

公开(公告)号：US20160276542A1

公开(公告)日：2016-09-22

申请号：US15171431

申请日：2016-06-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim

IPC: H01L33/40 ,  H01L33/00 ,  H01L33/12 ,  H01L33/62 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/405 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A light emitting diode (LED) includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first semiconductor layer, a second semiconductor layer disposed on the active layer, a reflection pattern disposed on a portion of the second semiconductor layer, and a first insulating layer including a first portion having a first thickness and a second portion having a second thickness different from the first thickness, in which the first portion is disposed on the reflection pattern or the first semiconductor layer and the second portion is disposed on the second semiconductor layer.

Abstract translation: 发光二极管（LED）包括衬底，设置在衬底上的第一半导体层，设置在第一半导体层的一部分上的有源层，设置在有源层上的第二半导体层，设置在有源层上的反射图案 以及第一绝缘层，其包括具有第一厚度的第一部分和具有不同于第一厚度的第二厚度的第二部分，其中第一部分设置在反射图案或第一半导体层上，以及 第二部分设置在第二半导体层上。

公开(公告)号：US20160211410A1

公开(公告)日：2016-07-21

申请号：US15081134

申请日：2016-03-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Hyun A. Kim ,  Won Young Roh ,  Min Woo Kang

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L27/153 ,  H01L27/156 ,  H01L33/20 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62

Abstract: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.