公开(公告)号：US08513684B2

公开(公告)日：2013-08-20

申请号：US13294034

申请日：2011-11-10

申请人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo

发明人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3211

摘要： A nitride semiconductor light emitting device is provided. A core semiconductor region, a first cladding region, and a second cladding region are mounted on a nonpolar primary surface of a support substrate of GaN which is not the polar plane. The core semiconductor region includes an active layer and a carrier block layer. The first cladding region includes an n-type AlGaN cladding layer and an n-type InAlGaN cladding layer. The n-type InAlGaN cladding layer is provided between the n-type AlGaN cladding layer and the active layer. A misfit dislocation density at an interface is larger than that at an interface. The AlGaN cladding layer is lattice-relaxed with respect to the GaN support substrate and the InAlGaN cladding layer is lattice-relaxed with respect to the AlGaN cladding layer.

摘要翻译： 提供一种氮化物半导体发光器件。 核心半导体区域，第一包层区域和第二包层区域安装在不是极平面的GaN的支撑衬底的非极性主表面上。 核心半导体区域包括有源层和载流子阻挡层。 第一包层区域包括n型AlGaN包覆层和n型InAlGaN包覆层。 n型InAlGaN包层设置在n型AlGaN包层和有源层之间。 界面处的错配位错密度大于界面处的位错密度。 AlGaN包层相对于GaN支撑衬底是晶格弛豫的，并且InAlGaN包层相对于AlGaN包层是晶格弛豫的。

公开(公告)号：US08357558B2

公开(公告)日：2013-01-22

申请号：US12837248

申请日：2010-07-15

申请人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

发明人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

IPC分类号： H01L21/00

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0014 ,  H01S5/34333

摘要： A method of making a semiconductor light-emitting device involves the steps of selecting at least one tilt angle for a primary surface of a substrate to evaluate the direction of piezoelectric polarization in a light-emitting layer, the substrate comprising a group III nitride semiconductor; preparing a substrate having the primary surface, the primary surface having the selected tilt angle, and the primary surface comprising the group III nitride semiconductor; forming a quantum well structure and p- and n-type gallium nitride semiconductor layers for the light-emitting layer at the selected tilt angle to prepare a substrate product; measuring photoluminescence of the substrate product while applying a bias to the substrate product, to determine bias dependence of the photoluminescence; evaluating the direction of the piezoelectric polarization in the light-emitting layer at the selected tilt angle on the primary surface of the substrate by the determined bias dependence; determining which of the primary surface or the back surface of the substrate is to be used, based on the evaluation to select a plane orientation of a growth substrate for making the semiconductor light-emitting device; and forming a semiconductor laminate for the semiconductor light-emitting device on the primary surface of the growth substrate. The tilt angle is defined by the primary surface of the substrate and the (0001) plane of the group III nitride semiconductor. Each of the well layer and the barrier layer of the light-emitting layer extends along a reference plane tilting from a plane perpendicular to a reference axis extending along the c-axis of the group III nitride semiconductor.

摘要翻译： 制造半导体发光器件的方法包括以下步骤：为衬底的主表面选择至少一个倾斜角以评估发光层中的压电极化的方向，所述衬底包括III族氮化物半导体; 制备具有主表面的基底，所述主表面具有所选择的倾斜角，并且所述主表面包含III族氮化物半导体; 以选定的倾斜角形成量子阱结构和用于发光层的p型和n型氮化镓半导体层以制备衬底产品; 测量衬底产物的光致发光，同时向衬底产物施加偏压，以确定光致发光的偏差依赖性; 以所确定的偏置依赖性，以所选择的倾斜角在所述基板的主表面上评估所述发光层中的所述压电极化的方向; 基于选择用于制造半导体发光器件的生长衬底的平面取向的评估，确定要使用衬底的主表面或背表面中的哪一个; 以及在所述生长衬底的主表面上形成用于所述半导体发光器件的半导体层压体。 倾斜角由衬底的主表面和III族氮化物半导体的（0001）面限定。 发光层的阱层和阻挡层中的每一个沿着从垂直于沿着III族氮化物半导体的c轴延伸的参考轴的平面倾斜的参考平面延伸。

公开(公告)号：US08227277B2

公开(公告)日：2012-07-24

申请号：US13277806

申请日：2011-10-20

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211

摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

摘要翻译： 制备III族氮化物半导体激光器件的方法包括：制备六方晶III族氮化物半导体的衬底，其中衬底具有半极性主表面; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括所述基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

公开(公告)号：US08207556B2

公开(公告)日：2012-06-26

申请号：US13243516

申请日：2011-09-23

申请人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

发明人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

IPC分类号： H01L29/24 ,  H01L33/00 ,  H01L29/06 ,  H01L29/12 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/22 ,  H01L29/732 ,  H01L29/739

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device includes a group III nitride semiconductor supporting base, a GaN based semiconductor region, an active layer, and a GaN semiconductor region. The primary surface of the group III nitride semiconductor supporting base is not any polar plane, and forms a finite angle with a reference plane that is orthogonal to a reference axis extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region, grown on the semipolar primary surface, includes a semiconductor layer of, for example, an n-type GaN based semiconductor doped with silicon. A GaN based semiconductor layer of an oxygen concentration of 5×1016 cm−3 or more provides an active layer, grown on the primary surface, with an excellent crystal quality.

摘要翻译： 提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件包括III族氮化物半导体支撑基底，GaN基半导体区域，有源层和GaN半导体区域。 III族氮化物半导体支撑基体的主表面不是任何极性平面，并且与与在III族氮化物半导体的c轴方向上延伸的参考轴正交的参考平面形成有限角度。 在半极性主表面上生长的GaN基半导体区域包括例如掺杂有硅的n型GaN基半导体的半导体层。 氧浓度为5×1016cm-3以上的GaN系半导体层能够提供在主表面生长的活性层，其结晶质量优异。

公开(公告)号：US08053806B2

公开(公告)日：2011-11-08

申请号：US12940879

申请日：2010-11-05

申请人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

发明人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

IPC分类号： H01L29/24 ,  H01L33/00 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L29/22

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer 23 of an oxygen concentration of 5×1016 cm−3 or more provides an active layer 17 with an excellent crystal quality, and the active layer 17 is grown on the primary surface of the GaN based semiconductor layer 23.

摘要翻译： 提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件11a包括III族氮化物半导体支撑基底13，GaN基半导体区域15，有源层有源层17和GaN半导体区域19.第III族氮化物半导体支撑基底13的主表面13a 基座13不是任何极性平面，并且与参考平面Sc形成有限的角度，该参考平面Sc与在III族氮化物半导体的c轴方向上延伸的基准轴Cx正交。 在半极性主表面13a上生长GaN基半导体区域15。 GaN系半导体区域15的GaN系半导体层21例如为n型GaN系半导体，n型GaN系半导体掺杂有硅。 氧浓度为5×1016cm-3以上的GaN系半导体层23提供具有优异晶体质量的有源层17，并且在GaN基半导体层23的主表面上生长有源层17。

公开(公告)号：US08917750B2

公开(公告)日：2014-12-23

申请号：US13328622

申请日：2011-12-16

申请人： Masahiro Adachi ,  Shinji Tokuyama ,  Yohei Enya ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Koji Katayama ,  Takatoshi Ikegami ,  Takao Nakamura

发明人： Masahiro Adachi ,  Shinji Tokuyama ,  Yohei Enya ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Koji Katayama ,  Takatoshi Ikegami ,  Takao Nakamura

IPC分类号： H01S5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/20 ,  B82Y20/00 ,  H01S5/30 ,  H01S5/22

CPC分类号： H01S5/2004 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/309 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/18 ,  H01S2302/00

摘要： Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.

摘要翻译： 提供能够以低阈值激光的III族氮化物半导体激光二极管。 支撑底座具有半极性或非极性主表面。 III族氮化物的c轴Cx相对于主表面倾斜。 在支撑基体的主表面上方设置有n型包层区域和p型包层区域。 芯型半导体区域设置在n型包层区域和p型包层区域之间。 芯半导体区域包括第一光导层，有源层和第二光导层。 有源层设置在第一光导层和第二光导层之间。 芯半导体区域的厚度不小于0.5μm。 这种结构允许将光限制在芯半导体区域中，而不会将光泄漏到支撑基底中，因此能够降低阈值电流。

公开(公告)号：US08048702B2

公开(公告)日：2011-11-01

申请号：US12692154

申请日：2010-01-22

申请人： Yohei Enya ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Takashi Kyono ,  Katsushi Akita

发明人： Yohei Enya ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Takashi Kyono ,  Katsushi Akita

IPC分类号： H01L21/00

CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/0075

摘要： In the method of fabricating a nitride-based semiconductor optical device by metal-organic chemical vapor deposition, a barrier layer is grown at a first temperature while supplying a gallium source to a reactor. The barrier layer comprises a first gallium nitride-based semiconductor. After the growth of the barrier layer, a nitrogen material and an indium material are supplied to the reactor without supply of the gallium source to perform a preflow of indium. Immediately after the preflow, a well layer is grown on the barrier layer at a second temperature while supplying an indium source and the gallium source to the reactor. The well layer comprises InGaN, and the second temperature is lower than the first temperature. The gallium source and the indium source are supplied to the reactor during plural first periods of the step of growing the well layer to grow plural InGaN layers, respectively. The indium material is supplied to the reactor without supply of the gallium source during the second period of the step of growing the well layer. The second period is between the first periods. The well layer comprises the plural InGaN layers.

摘要翻译： 在通过金属有机化学气相沉积制造氮化物基半导体光学器件的方法中，在将镓源供应到反应器的同时，在第一温度下生长阻挡层。 阻挡层包括第一氮化镓基半导体。 在阻挡层生长之后，向反应器供给氮材料和铟材料，而不提供镓源以执行铟的预流。 在预流之后立即在第二温度下在阻挡层上生长阱层，同时向反应器供应铟源和镓源。 阱层包括InGaN，第二温度低于第一温度。 在生长阱层的步骤的多个第一阶段期间，分别将镓源和铟源供应到反应器，以生长多个InGaN层。 在生长阱层的第二阶段期间，铟材料被供应到反应器而不供应镓源。 第二个时期是在第一个时期之间。 阱层包括多个InGaN层。

公开(公告)号：US08304793B2

公开(公告)日：2012-11-06

申请号：US12836117

申请日：2010-07-14

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takashi Kyono ,  Takao Nakamura

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takashi Kyono ,  Takao Nakamura

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/22 ,  H01S5/3054 ,  H01S5/3202

摘要： A III-nitride semiconductor optical device has a support base comprised of a III-nitride semiconductor, an n-type gallium nitride based semiconductor layer, a p-type gallium nitride based semiconductor layer, and an active layer. The support base has a primary surface at an angle with respect to a reference plane perpendicular to a reference axis extending in a c-axis direction of the III-nitride semiconductor. The n-type gallium nitride based semiconductor layer is provided over the primary surface of the support base. The p-type gallium nitride based semiconductor layer is doped with magnesium and is provided over the primary surface of the support base. The active layer is provided between the n-type gallium nitride based semiconductor layer and the p-type gallium nitride based semiconductor layer over the primary surface of the support base. The angle is in the range of not less than 40° and not more than 140°. The primary surface demonstrates either one of semipolar nature and nonpolar nature. The p-type gallium nitride based semiconductor layer contains carbon as a p-type dopant. A carbon concentration of the p-type gallium nitride based semiconductor layer is not less than 2×1016 cm−3, and the carbon concentration of the p-type gallium nitride based semiconductor layer is not more than 1×1019 cm−3.

摘要翻译： III族氮化物半导体光学器件具有由III族氮化物半导体，n型氮化镓系半导体层，p型氮化镓系半导体层和有源层构成的支撑基体。 支撑基座具有相对于垂直于在III族氮化物半导体的c轴方向上延伸的参考轴线的参考平面成一定角度的主表面。 n型氮化镓基半导体层设置在支撑基体的主表面上。 p型氮化镓基半导体层掺杂有镁并且设置在载体基体的主表面上。 有源层设置在支撑基体的主表面上的n型氮化镓基半导体层和p型氮化镓基半导体层之间。 该角度在不小于40°且不大于140°的范围内。 主要表面表现出半极性和非极性之一。 p型氮化镓系半导体层含有碳作为p型掺杂剂。 p型氮化镓系半导体层的碳浓度为2×1016cm-3以上，p型氮化镓系半导体层的碳浓度为1×1019cm-3以下。

公开(公告)号：US07955881B2

公开(公告)日：2011-06-07

申请号：US12500074

申请日：2009-07-09

申请人： Katsushi Akita ,  Takamichi Sumitomo ,  Yohei Enya ,  Takashi Kyono ,  Masaki Ueno

发明人： Katsushi Akita ,  Takamichi Sumitomo ,  Yohei Enya ,  Takashi Kyono ,  Masaki Ueno

IPC分类号： H01L21/00

CPC分类号： H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06

摘要： In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer.

摘要翻译： 在制造包括阱层和势垒层的量子阱结构的方法中，阱层在蓝宝石衬底的第一温度下生长。 阱层包含含有铟作为成分的III族氮化物半导体。 在InGaN阱层上生长中间层，同时使蓝宝石衬底温度从第一温度单调增加。 中间层的III族氮化物半导体的带隙能量大于InGaN阱层的带隙能量，中间层的厚度大于1nm且小于3nm。 阻挡层在高于第一温度的第二温度下在中间层上生长。 包含III族氮化物半导体的阻挡层和势垒层的III族氮化物半导体的带隙能量大于阱层的带隙能量。

公开(公告)号：US08476615B2

公开(公告)日：2013-07-02

申请号：US13295840

申请日：2011-11-14

申请人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L29/06

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34333

摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.

摘要翻译： GaN基半导体发光器件11a包括由GaN基半导体构成的衬底13，该GaN基半导体具有从c面朝向m轴倾斜角度α大于或等于63度的主表面13a;以及 低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。 基板13的位错密度为1×10 7 cm -2以下。 在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。