公开(公告)号：US06900986B2

公开(公告)日：2005-05-31

申请号：US10810832

申请日：2004-03-29

申请人： Nobuyoshi Kimoto ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Masuo Koga ,  Dai Nakajima ,  Gourab Majumdar ,  Masakazu Fukada

发明人： Nobuyoshi Kimoto ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Masuo Koga ,  Dai Nakajima ,  Gourab Majumdar ,  Masakazu Fukada

IPC分类号： H01L23/057 ,  H01L23/50 ,  H01L23/60 ,  H01L25/07 ,  H01L25/18 ,  H02M1/00 ,  H02M7/00 ,  H02M7/04 ,  H05K7/20

CPC分类号： H02M7/003 ,  H01L23/057 ,  H01L23/50 ,  H01L23/60 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/4811 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： A power module includes a first substrate with a power semiconductor device mounted thereon, a second substrate with a control circuit for controlling the power semiconductor device formed thereon, a smoothing capacitor electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device, and a case including a case frame and a case lid. The case has an interior in which the first substrate, the second substrate and the smoothing capacitor are disposed, and the smoothing capacitor is disposed in contact with a side surface of the case frame.

摘要翻译： 功率模块包括其上安装有功率半导体器件的第一衬底，具有用于控制其上形成的功率半导体器件的控制电路的第二衬底，电连接到功率半导体器件的平滑电容器，用于平滑外部供应到 功率半导体器件，以及包括壳体框架和壳体盖的壳体。 壳体具有其中设置有第一基板，第二基板和平滑电容器的内部，并且平滑电容器设置成与壳体框架的侧表面接触。

公开(公告)号：US06753596B1

公开(公告)日：2004-06-22

申请号：US10436262

申请日：2003-05-13

申请人： Dai Nakajima ,  Kiyoshi Ishida ,  Taketoshi Shikano

发明人： Dai Nakajima ,  Kiyoshi Ishida ,  Taketoshi Shikano

IPC分类号： H01L23495

CPC分类号： H01L24/85 ,  H01L23/3121 ,  H01L23/3142 ,  H01L23/4334 ,  H01L23/49562 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/27013 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/85009 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/351 ,  H01L2224/78 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512

摘要： A resin-sealed semiconductor device includes a metallic plate and a semiconductor element soldered thereto. The metallic plate has a semiconductor element mounting region formed on one surface thereof and a plurality of squared recesses defined lengthwise and crosswise in the one surface at approximately regular intervals at locations other than the semiconductor element mounting region.

摘要翻译： 树脂密封半导体器件包括金属板和焊接到其上的半导体元件。 金属板具有在其一个表面上形成的半导体元件安装区域和在半导体元件安装区域之外的位置处以大致规则的间隔在一个表面中纵向和横向限定的多个平方的凹槽。

公开(公告)号：US06522544B1

公开(公告)日：2003-02-18

申请号：US09690012

申请日：2000-10-17

申请人： Nobuyoshi Kimoto ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Masuo Koga ,  Dai Nakajima ,  Gourab Majumdar ,  Masakazu Fukada

发明人： Nobuyoshi Kimoto ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Masuo Koga ,  Dai Nakajima ,  Gourab Majumdar ,  Masakazu Fukada

IPC分类号： H05K720

CPC分类号： H02M7/003 ,  H01L23/057 ,  H01L23/50 ,  H01L23/60 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/4811 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.

摘要翻译： 功率模块包括用于平滑外部施加到功率半导体器件（5）的DC电源电压的盒形平滑电容器（20）。 平滑电容器（20）与壳体框架（6）的侧表面接触，该壳体框架（6）的侧表面包括侧面（其中布置有N端子（8N）和P端子（8P）） 壳体框架（6），并且具有与壳体框架（6）的顶表面的顶表面水平。 平滑电容器（20）的N电极（21N）和P电极（21P）设置在平滑电容器（20）的顶表面上并且靠近N端子（8N）和P- 端子（8P）分别连接到电源模块主体部分（99）。 电源模块可以减小电路电感，减小尺寸和重量，并具有良好的抗振动性。

公开(公告)号：US20130200136A1

公开(公告)日：2013-08-08

申请号：US13879510

申请日：2011-05-30

申请人： Noriyuki Besshi ,  Dai Nakajima ,  Hirotoshi Maekawa ,  Satoshi Ishibashi

发明人： Noriyuki Besshi ,  Dai Nakajima ,  Hirotoshi Maekawa ,  Satoshi Ishibashi

IPC分类号： B23K31/02 ,  B23K3/08

CPC分类号： B23K31/02 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/015 ,  B23K3/04 ,  B23K3/082 ,  B23K2101/42

摘要： In the present invention, when a power module is soldered to a heatsink, steam which is temperature-adjusted to at least the melting point of a solder is introduced from a steam generating tank into the flow path provided in the heatsink, the heatsink is heated and the solder is melted. Inert gas is introduced into a soldering tank from another route so as not to mix with the steam supplied to the heatsink. Voids in the solder are reduced and condensed by pressure regulation and as a result the negative impact of voids is eliminated.

摘要翻译： 在本发明中，当将功率模块焊接到散热器时，将蒸发器从温度调节至至少熔点的熔点从蒸汽发生罐引入设置在散热器中的流路中，将散热器加热 焊料熔化。 惰性气体从另一路线引入焊锡槽，以免与供应到散热器的蒸汽混合。 通过压力调节，焊料中的空隙减少和冷凝，结果消除了空隙的负面影响。

公开(公告)号：US07151661B2

公开(公告)日：2006-12-19

申请号：US10114035

申请日：2002-04-03

申请人： Tohru Kimura ,  Dai Nakajima ,  Yuuji Kuramoto

发明人： Tohru Kimura ,  Dai Nakajima ,  Yuuji Kuramoto

IPC分类号： H01G4/228 ,  H01G2/20

CPC分类号： H01G4/228 ,  H01L25/11 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  H02M7/003 ,  Y02T10/7022 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A capacitor module incorporating a ceramic capacitor having terminal members for reducing stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device using the capacitor module. The capacitor module and the semiconductor device are designed to have a reduced size and improved reliability. The semiconductor device has a power converter circuit constituted by switching devices and diodes, a P-polarity conductor and an N-polarity conductor for supplying electric power to the power converter circuit, a ceramic capacitor having two external electrodes, flexible terminal members connected to the external electrodes, a heat radiation plate provided at the bottom of a case, an insulating resin with which the power converter circuit is covered, a P-polarity connection conductor for connection between the terminal member on one side of the ceramic capacitor and the P-polarity conductor, an N-polarity connection conductor for connection between the terminal member on the other side of the ceramic capacitor and the N-polarity conductor, and a molded wiring plate on which a major surface of the ceramic capacitor is supported.

公开(公告)号：US07081671B2

公开(公告)日：2006-07-25

申请号：US10216789

申请日：2002-08-13

申请人： Masakazu Fukada ,  Dai Nakajima ,  Ken Takanashi

发明人： Masakazu Fukada ,  Dai Nakajima ,  Ken Takanashi

IPC分类号： H01L23/34

CPC分类号： H01L24/49 ,  H01L23/473 ,  H01L24/48 ,  H01L25/072 ,  H01L2223/6622 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01016 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： In a power module (111), a free-wheeling diode (1A), an IGBT (1B), and a capacitor (20) for smoothing direct current are disposed directly on a surface (2BS) of a conductive heat sink (2B) with through holes (2BH). The rear electrodes of the free wheeling diode (1A), the IGBT (1B), and the capacitor (20) are bonded to the heat sink (2B) for example with solder, whereby the diode (1A), the IGBT (1B), and the capacitor (20) are electrically connected with the heat sink (2B). The front electrodes of the diode (1A), the IGBT (1B), and the capacitor (20) are connected with each other for example by wires (7). In the heat sink (2B), a cooling medium flows through the through holes (2BH). Such a configuration allows miniaturization of the power module and improves the cooling performance and reliability of the power module.

摘要翻译： 在功率模块（111）中，用于平滑直流电流的续流二极管（1A），IGBT（1B）和电容器（20）直接设置在导电散热器的表面（2 BS）上 （2B）带通孔（2 BH）。 续流二极管（1A），IGBT（1B）和电容器（20）的后电极例如用焊料接合到散热器（2B），由此二极管（1A）， IGBT（1B）和电容器（20）与散热器（2B）电连接。 二极管（1A），IGBT（1B）和电容器（20）的前电极通过电线（7）彼此连接。 在散热器（2B）中，冷却介质流过通孔（2 BH）。 这样的配置允许功率模块的小型化并且提高功率模块的冷却性能和可靠性。

公开(公告)号：US06979843B2

公开(公告)日：2005-12-27

申请号：US10383650

申请日：2003-03-10

申请人： Dai Nakajima ,  Yoshihiro Kashiba ,  Hideaki Chuma

发明人： Dai Nakajima ,  Yoshihiro Kashiba ,  Hideaki Chuma

IPC分类号： H01L23/48 ,  H01L23/427 ,  H01L23/433 ,  H01L23/495 ,  H01L31/111

CPC分类号： H01L24/91 ,  H01L23/427 ,  H01L23/4334 ,  H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/1301 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18301 ,  H01L2924/19107 ,  H01L2924/2076 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power semiconductor device that uses a lead frame for making connection to a semiconductor device and has a structure less subject to fatigue failure at the connection part of the lead frame. A mold resin of a casing (14) is used for integrally covering the lead frame (6, 7, 13), semiconductor device (1), and metal block (15) serving as a substrate mounting the semiconductor device (1). The mold resin surrounding the lead frame (6) and semiconductor device (1) strengthens the joint therebetween, resulting in the power semiconductor device less subject to fatigue failure at the connection part of the lead frame (6).

摘要翻译： 一种功率半导体器件，其使用引线框架连接到半导体器件，并且具有在引线框架的连接部分处较少受到疲劳破坏的结构。 壳体（14）的模制树脂用于整体覆盖用作安装半导体器件（1）的基板的引线框架（6,7,13），半导体器件（1）和金属块（15）。 围绕引线框架（6）和半导体器件（1）的模制树脂增强了它们之间的接合，导致功率半导体器件在引线框架（6）的连接部分处较少受到疲劳破坏。

公开(公告)号：US20050041369A1

公开(公告)日：2005-02-24

申请号：US10939850

申请日：2004-09-14

申请人： Tohru Kimura ,  Dai Nakajima ,  Yuuji Kuramoto

发明人： Tohru Kimura ,  Dai Nakajima ,  Yuuji Kuramoto

IPC分类号： H01L25/07 ,  H01G4/228 ,  H01L25/11 ,  H01L25/18 ,  H02M7/00 ,  H02M7/48 ,  H02M7/5387 ,  H01G4/06

CPC分类号： H01G4/228 ,  H01L25/11 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  H02M7/003 ,  Y02T10/7022 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A capacitor module incorporating a ceramic capacitor having terminal members for reducing stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device using the capacitor module. The capacitor module and the semiconductor device are designed to have a reduced size and improved reliability. The semiconductor device has a power converter circuit constituted by switching devices and diodes, a P-polarity conductor and an N-polarity conductor for supplying electric power to the power converter circuit, a ceramic capacitor having two external electrodes, flexible terminal members connected to the external electrodes, a heat radiation plate provided at the bottom of a case, an insulating resin with which the power converter circuit is covered, a P-polarity connection conductor for connection between the terminal member on one side of the ceramic capacitor and the P-polarity conductor, an N-polarity connection conductor for connection between the terminal member on the other side of the ceramic capacitor and the N-polarity conductor, and a molded wiring plate on which a major surface of the ceramic capacitor is supported.

摘要翻译： 一种具有陶瓷电容器的电容器模块，以及使用该电容器模块的半导体装置，该陶瓷电容器具有用于减小由陶瓷电容器本身的热应力或电致伸缩引起的应力的端子部件 电容器模块和半导体器件被设计成具有减小的尺寸和提高的可靠性。 半导体器件具有由开关器件和二极管构成的功率转换器电路，用于向功率转换器电路提供电力的P极导体和N极导体，具有两个外部电极的陶瓷电容器，连接到 外部电极，设置在壳体底部的散热板，覆盖电力转换器电路的绝缘树脂，用于在陶瓷电容器一侧的端子构件与P- 陶瓷电容器另一侧的端子部件与N极导体之间​​的N极连接导体，以及陶瓷电容器的主面被支撑在其上的模制配线板。

公开(公告)号：US06700194B2

公开(公告)日：2004-03-02

申请号：US10108463

申请日：2002-03-29

申请人： Dai Nakajima ,  Hideaki Chuma

发明人： Dai Nakajima ,  Hideaki Chuma

IPC分类号： H01L2334

CPC分类号： H01L25/18 ,  H01L21/565 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01084 ,  H01L2924/01093 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2924/00015

摘要： A semiconductor device which satisfies both the requirements for radiation performance and for miniaturization while having a semiconductor element for a heavy current. The semiconductor device has an IGBT element (1) and diode element (2) which are provided on the main surface of the heat spreader (25) in a strip form formed of a metal with excellent heat conductivity and electricity conductivity. In addition, a relay terminal block (20) is provided outside of the IGBT element (1) on the main surface of the heat spreader (25) and the relay terminal block (20), the IGBT element (1) and the diode element (2) are aligned. Then, the external connection electrode plates (81) and (82) are, respectively, provided on both sides of this alignment. The heat spreader (25), the IGBT element (1), the diode element (2), the relay terminal block (20) and the external connection electrode plate (8) are sealed in a resin of a box shape by using transfer molding and the resin package (23) defines the external form of the semiconductor device (M100).

摘要翻译： 同时满足放射性能要求和小型化同时具有用于大电流的半导体元件的半导体器件。 半导体器件具有IGBT元件（1）和二极管元件（2），它们以由具有优良的导热性和导电性的金属形成的带状形式设置在散热器（25）的主表面上。 另外，在散热器（25）的主面和中继端子块（20）的IGBT元件（1）的外侧设置有中继端子块（20），IGBT元件（1）和二极管元件 （2）对齐。 然后，外部连接电极板（81）和（82）分别设置在该对准的两侧。 散热器（25），IGBT元件（1），二极管元件（2），中继端子块（20）和外部连接电极板（8）通过使用传递模塑 并且树脂封装（23）限定半导体器件（M100）的外部形式。

公开(公告)号：US06580147B2

公开(公告)日：2003-06-17

申请号：US09805576

申请日：2001-03-14

申请人： Toru Kimura ,  Dai Nakajima ,  Tatsuya Okuda ,  Takeshi Ohi ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Yuuji Kuramoto ,  Toshinori Yamane ,  Masakazu Fukada ,  Majumdar Gourab

发明人： Toru Kimura ,  Dai Nakajima ,  Tatsuya Okuda ,  Takeshi Ohi ,  Takanobu Yoshida ,  Naoki Yoshimatsu ,  Yuuji Kuramoto ,  Toshinori Yamane ,  Masakazu Fukada ,  Majumdar Gourab

IPC分类号： H01L2900

CPC分类号： H01L27/0629 ,  H01L27/0647

摘要： P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a single or a plurality of capacitors 10 are respectively connected to P-electrodes 30a and N-electrodes 31a in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.

摘要翻译： 半导体器件2的P电极30a和N电极31a以及分别连接到U相40，V相41和W相42的板状或块状形状的电容器10具有 开关元件20和二极管21内置在半导体器件2中，并且在各相中分别将单个或多个电容器10连接到P电极30a和N电极31a，由此将平滑电容器内置 减少布线电感的半导体器件，电容器小型化，整个电力转换装置即逆变器小型化。