摘要:
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,
摘要翻译:半导体器件如低介电常数(k)薄膜,高k栅极硅酸盐,低温硅外延膜和含有氮化硅(Si 3 N 4),硅氧氮化物(SiO x N y)的膜的制造中的含硅膜的硅前体, 和/或二氧化硅(SiO 2)。 本发明的前体适于在低温(例如,<500℃)的化学气相沉积工艺中使用,用于制造ULSI器件和器件结构。
摘要:
Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a thin conformal copper layer on a surface by utilizing a formation temperature below about 125 degrees Celsius.
摘要:
A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要:
Chemical vapor deposition (CVD) precursor compositions for forming metal oxide high dielectric constant (κ) thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(β-diketonate)2(OR)2, wherein M is Hf, Zr or Ti, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.
摘要:
A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要:
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,
摘要翻译:半导体器件如低介电常数(k)薄膜,高k栅极硅酸盐,低温硅外延膜和含有氮化硅(Si 3 N 4),硅氧氮化物(SiO x N y)的膜的制造中的含硅膜的硅前体, 和/或二氧化硅(SiO 2)。 本发明的前体适于在低温(例如,<500℃)的化学气相沉积工艺中使用,用于制造ULSI器件和器件结构。
摘要:
A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, or wherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSiAy(NR1R2)4-x-y or wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.
摘要翻译:使用式M(NR 1 R 2)x的金属酰胺化合物或其中M为Zr,Hf,Y,La,镧系元素,Ta,Ti等的金属酰胺化合物在基板上形成栅极电介质薄膜的CVD方法, 或Al; N是氮; R 1和R 2各自相同或不同,独立地选自H,芳基,全氟芳基,C 1 -C 8烷基,C 1 -C 8全氟烷基,烷基甲硅烷基; x是金属M上的氧化态; 和式H x SiA y(NR 1 R 2)4-x-y的氨基硅烷化合物或其中H为氢; x为0〜3; 硅是硅; A是卤素; Y为0〜3; N是氮; R 1和R 2各自相同或不同,并且独立地选自H,芳基,全氟芳基,C 1 -C 8烷基和C 1 -C 8全氟烷基; n为1-6。 与标准的SiO 2栅极电介质材料相比,这些栅极电介质材料提供低水平的碳和卤素杂质。
摘要:
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SioxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,