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公开(公告)号：US06320207B1
公开(公告)日：2001-11-20
申请号：US08844616
申请日：1997-04-21
IPC分类号： H01L3300
CPC分类号： H01L33/325 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0251 , H01L21/0254 , H01L21/0262
摘要： A light emitting device has an N-type gallium nitride system compound semiconductor layer provided on a substrate; and a P-type gallium nitride system compound semiconductor layer provided on said N-type gallium nitride system compound semiconductor layer. The N-type gallium nitride compound semiconductor layer has such an area that an impurity concentration increases corresponding to a layer thickness from the side of said substrate.
摘要翻译： 发光器件具有设置在基板上的N型氮化镓系化合物半导体层; 以及设置在所述N型氮化镓系化合物半导体层上的P型氮化镓系化合物半导体层。 N型氮化镓系化合物半导体层具有从基板一侧的层厚度的杂质浓度增加的面积。
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公开(公告)号：US06281900B1
公开(公告)日：2001-08-28
申请号：US09204003
申请日：1998-12-01
申请人： Masayuki Ishikawa
发明人： Masayuki Ishikawa
IPC分类号： G06F314
CPC分类号： G06F9/451
摘要： The invention provides an information processing apparatus and method and a providing medium by which editing of routing can be performed rapidly and readily. When a node which has no DEF name applied thereto is dropped into a route window, a routing editing tool provides a DEF name to the dropped node. When a node displayed in the route window or a scene graph window is dragged by a mouse and dropped to another node displayed in the scene graph window or the route window, the routing editing tool displays route candidates which can be set between the two nodes. When a user selects one of the displayed route candidates, the routing editing tool sets the selected route candidate as a route between the nodes.
摘要翻译： 本发明提供一种信息处理设备和方法以及提供媒体，通过该介质可以快速，容易地执行路由编辑。 当没有应用DEF名称的节点被丢弃到路由窗口中时，路由编辑工具向丢弃的节点提供DEF名称。 当在路径窗口或场景图窗口中显示的节点被鼠标拖动并且丢弃到场景图窗口或路径窗口中显示的另一节点时，路由编辑工具显示可以在两个节点之间设置的路由候选。 当用户选择显示的路由候选中的一个时，路由编辑工具将所选择的路由候选设置为节点之间的路由。
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公开(公告)号：US06221684B1
公开(公告)日：2001-04-24
申请号：US09457331
申请日：1999-12-09
申请人： Hideto Sugawara , Masayuki Ishikawa
发明人： Hideto Sugawara , Masayuki Ishikawa
IPC分类号： H01L2100
CPC分类号： H01S5/32 , H01L33/04 , H01L33/145 , H01L33/20 , H01L33/32 , H01L33/325 , H01L33/42
摘要： An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the activation ratio of acceptor impurities in the p-type clad layers. The n-cap layer is used also as a current blocking layer, thereby constructing a current-blocked structure. The n-cap layer should preferably be made of InuAlvGa1−u−vN (0
摘要翻译： 在p型覆盖层的顶表面上形成n盖层，p型覆盖层是具有用于将载流子发射到GaN基光的发光区域的pn结的层叠结构的顶层 从而增加p型覆层中受主杂质的活化率。 n帽层也用作电流阻挡层，从而构成电流阻挡结构。 n帽层应优选由厚度为1.0微米以上的InuAlvGa1-u-vN（0
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公开(公告)号：US06185238B2
公开(公告)日：2001-02-06
申请号：US09026913
申请日：1998-02-20
IPC分类号： H01S319
CPC分类号： B82Y20/00 , H01L2224/16225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01S5/0213 , H01S5/0224 , H01S5/02272 , H01S5/2213 , H01S5/2219 , H01S5/3211 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： In a nitride compound semiconductor laser including an active layer sandwiched by semiconductor layers of different conduction types on a sapphire substrate, layers of polyimide for current blocking and light confinement are formed on side surfaces of a mesa-type current confining structure with and under the p-side electrode. The laser ensures efficient, uniform carrier injection into the active layer, suppresses higher-order modes other than the fundamental transverse mode, and thereby promises a high reliability ensuring continuous pulsation under a low threshold current and a low operation voltage with low noise characteristics.
摘要翻译： 在蓝宝石衬底上包含由不同导电类型的半导体层夹持的有源层的氮化物化合物半导体激光器中，在p型和p型的台面型限流结构的侧面形成用于电流阻挡和光限制的聚酰亚胺层 侧电极。 激光器确保有源层中有效均匀的载流子注入，抑制基本横模以外的高次模，从而保证高可靠性，确保在低阈值电流和低噪声特性的低工作电压下连续脉动。
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公开(公告)号：US6125862A
公开(公告)日：2000-10-03
申请号：US942019
申请日：1997-10-01
摘要： Cleaning apparatus provide for the cleaning of a workpiece by first immersing the workpiece in a cleaning tank having a cleaning liquid therein for a predetermined period of time, removing the workpiece from the cleaning tank, moving the workpiece through air for a pre-selected period of time, and supplying the workpiece to a drying device which then dries the workpiece. As the workpiece is moved through the air, the workpiece may be vibrated, moved at an incline then a decline, and/or have air blasted at it, so that any liquid, e.g. rinsing solution, remaining thereon is caused to fall off, such occurring prior to the drying of the workpiece by the drying device.
摘要翻译： 清洁装置通过首先将工件浸入其中具有清洁液体的清洗槽中预定的时间段，从而将工件从清洗槽中移出，将工件移动通过空气预先选定的时间段 时间，并将工件供应到干燥装置，然后干燥工件。 当工件移动通过空气时，工件可以振动，以倾斜方式移动然后下降，和/或在其上进行空气喷射，使得任何液体，例如， 残留在其上的冲洗溶液脱落，这在干燥装置干燥工件之前发生。
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36.发明授权
公开(公告)号：US6121634A
公开(公告)日：2000-09-19
申请号：US27490
申请日：1998-02-20
申请人： Shinji Saito , Genichi Hatakoshi , Masaaki Onomura , Hidetoshi Fujimoto , Norio Iizuka , Chiharu Nozaki , Johji Nishio , Masayuki Ishikawa
发明人： Shinji Saito , Genichi Hatakoshi , Masaaki Onomura , Hidetoshi Fujimoto , Norio Iizuka , Chiharu Nozaki , Johji Nishio , Masayuki Ishikawa
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/025 , H01S5/34333
摘要： In a nitride compound semiconductor light emitting device, an In.sub.0.3 Ga.sub.0.7 N/GaN multi-quantum well active layer 105 or an In.sub.0.1 Ga.sub.0.9 N/GaN multi-quantum well adjacent layer 104 is made as a saturable absorptive region so that self-pulsation occurs there. Thus, the device ensures self-pulsation with a high probability with a simple structure, and satisfies requirements for use as an optical head for reading data from an optical disc.
摘要翻译： 在氮化物化合物半导体发光器件中，将In0.3Ga0.7N / GaN多量子阱有源层105或In0.1Ga0.9N / GaN多量子阱相邻层104制成为可饱和吸收区域，使得自身 脉搏发生在那里。 因此，该装置以简单的结构以高概率确保自脉动，并且满足用作从光盘读取数据的光学头的要求。
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公开(公告)号：US6031858A
公开(公告)日：2000-02-29
申请号：US925764
申请日：1997-09-09
申请人： Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
发明人： Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
CPC分类号： H01S5/32341 , H01S2301/166 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2219 , H01S5/2231 , H01S5/4043 , H01S5/405 , H01S5/4087
摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.
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公开(公告)号：US6031310A
公开(公告)日：2000-02-29
申请号：US13856
申请日：1998-01-27
申请人： Masayuki Ishikawa , Shinichi Niwa
发明人： Masayuki Ishikawa , Shinichi Niwa
CPC分类号： H02K1/2786 , H02K15/03 , H02K21/22 , Y10T156/1038
摘要： A spindle motor comprises a rotor, which is rotatably supported by a stator, a rotor yoke, which is made up of a magnet fixed onto the rotor and a drive magnet, which is made of a bonded magnet which is adhesively fixed onto the rotor. A first metallic layer is formed onto a surface on the rotor yoke facing the drive magnet. A second metallic layer is formed on a surface of the drive magnet facing the rotor yoke.
摘要翻译： 主轴电动机包括由定子可旋转地支撑的转子，由固定在转子上的磁体和由固定在转子上的粘结磁体制成的驱动磁体构成的转子磁轭。 第一金属层形成在面向驱动磁体的转子磁轭的表面上。 第二金属层形成在面向转子轭的驱动磁体的表面上。
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39.发明授权
公开(公告)号：US6017807A
公开(公告)日：2000-01-25
申请号：US60068
申请日：1998-04-15
IPC分类号： H01L21/205 , H01L33/06 , H01L33/32 , H01L33/36 , H01L31/18
CPC分类号： H01L33/325 , H01L33/007
摘要： After p-type gallium nitride compound semiconductor layers, to which p-type impurity is added, are formed by virtue of chemical vapor deposition, the p-type gallium nitride compound semiconductor layers are thermally annealed at more than 400.degree. C. or more than 700.degree. C. while supplying a flow of an inert gas in parallel to a substrate surface at a predetermined flow rate or more. Otherwise, the p-type gallium nitride compound semiconductor layers are thermally annealed at more than 400.degree. C. or more than 700.degree. C. in an inert gas atmosphere having a predetermined pressure or more. According to the annealing process, the p-type impurity can be more effectively activated, so that p-type gallium nitride compound semiconductor layers which have fewer crystal defects, etc. and have lower resistivity can be formed.
摘要翻译： 在通过化学气相沉积形成p型杂质的p型氮化镓化合物半导体层之后，p型氮化镓系化合物半导体层在400℃以上热退火， 同时以预定的流速或更多的流量平行于衬底表面供应惰性气体流。 否则，在具有预定压力或更大压力的惰性气体气氛中，p型氮化镓化合物半导体层在大于400℃或高于700℃下热退火。 根据退火处理，可以更有效地激活p型杂质，从而可以形成具有较少的晶体缺陷等并且具有较低电阻率的p型氮化镓化合物半导体层。
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公开(公告)号：US5732098A
公开(公告)日：1998-03-24
申请号：US611460
申请日：1996-04-11
申请人： Katsuhiko Nisitani , Kazumi Unno , Masayuki Ishikawa , Ryo Saeki , Takafumi Nakamura , Masanobu Iwamoto
发明人： Katsuhiko Nisitani , Kazumi Unno , Masayuki Ishikawa , Ryo Saeki , Takafumi Nakamura , Masanobu Iwamoto
CPC分类号： H01L33/30 , H01L33/145
摘要： A semiconductor light emitting device has a double heterostructure. The device is composed of an active layer and clad layers that sandwich the active layer. At least one of the clad layers has a multilayer structure having at least two element layers. The Al mole fraction of an element layer, which is proximal to the active layer, of the multilayer structure is smaller than that of the other element layer thereof distal from the active layer. This arrangement improves the crystal quality of an interface between the active layer and the clad layer of multilayer structure and effectively confines carriers in the active layer.
摘要翻译： 半导体发光器件具有双异质结构。 该器件由有源层和夹层有源层的覆层组成。 至少一个包覆层具有至少两个元件层的多层结构。 多层结构中邻近活性层的元素层的Al摩尔分数小于远离活性层的其它元素层的Al摩尔分数。 这种布置提高了有源层和多层结构的包层之间的界面的晶体质量，并有效地限制了有源层中的载流子。
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