公开(公告)号：US20140048909A1

公开(公告)日：2014-02-20

申请号：US14063963

申请日：2013-10-25

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L29/06

CPC classification number: H01L21/6833 ,  B32B38/18 ,  B81C99/002 ,  H01L21/266 ,  H01L21/3083 ,  H01L21/76264 ,  H01L24/75 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66143 ,  H01L29/66348 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725 ,  H01L2224/7598 ,  H01L2924/1461 ,  H02N13/00 ,  Y10T156/17

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

Abstract translation: 描述了一种兼容的双极微器件传输头阵列和从SOI衬底形成兼容的双极微器件传输阵列的方法。 在一个实施例中，柔性双极微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括第一和第二硅互连以及与第一和第二硅互连电连接并可偏转到基底基板和硅电极之间的一个或多个空腔中的第一和第二硅电极阵列。

公开(公告)号：US08573469B2

公开(公告)日：2013-11-05

申请号：US13436260

申请日：2012-03-30

Applicant: Hsin-Hua Hu ,  Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law

Inventor： Hsin-Hua Hu ,  Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law

IPC: B23K31/00 ,  B23K101/40 ,  H01L33/46

CPC classification number: H01L33/08 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/405 ,  H01L2224/7598 ,  H01L2224/83 ,  H01L2224/95145 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.

Abstract translation: 描述了将微器件和微器件阵列制造和传送到接收衬底的方法。 在一个实施例中，在蚀刻p-n二极管层以形成多个微p-n二极管期间，电绝缘层被用作蚀刻停止层。 在一个实施例中，在将微器件形成和传送到接收衬底期间，使用导电中间接合层。

公开(公告)号：US09318475B2

公开(公告)日：2016-04-19

申请号：US14278778

申请日：2014-05-15

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  Dariusz Golda

IPC: H01L25/16 ,  H01L27/15 ,  G09F9/30 ,  H01L25/075 ,  H01L27/12 ,  H05K1/18

CPC classification number: H01L25/167 ,  G09F9/301 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0753 ,  H01L27/1266 ,  H01L27/15 ,  H01L27/153 ,  H01L27/156 ,  H01L2221/68318 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/16227 ,  H01L2224/24101 ,  H01L2224/24105 ,  H01L2224/24227 ,  H01L2224/245 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32227 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/81192 ,  H01L2224/81424 ,  H01L2224/81438 ,  H01L2224/81444 ,  H01L2224/81466 ,  H01L2224/81486 ,  H01L2224/8149 ,  H01L2224/81805 ,  H01L2224/81825 ,  H01L2224/8183 ,  H01L2224/82005 ,  H01L2224/82102 ,  H01L2224/82104 ,  H01L2224/82106 ,  H01L2224/83005 ,  H01L2224/83192 ,  H01L2224/83424 ,  H01L2224/83438 ,  H01L2224/83444 ,  H01L2224/83466 ,  H01L2224/83486 ,  H01L2224/8349 ,  H01L2224/83805 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/92224 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/10161 ,  H01L2924/10162 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15156 ,  H01L2924/18161 ,  H01L2924/18162 ,  H05K1/189 ,  H05K3/4682 ,  H05K2201/10106 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01074 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0781 ,  H01L2924/01038 ,  H01L2924/053 ,  H01L2924/06 ,  H01L2924/01006 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01042 ,  H01L2924/01022 ,  H01L2924/01071 ,  H01L2224/81 ,  H01L2224/82 ,  H01L2224/83

Abstract: A flexible display panel and method of formation with a sacrificial release layer are described. The method of manufacturing a flexible display system includes forming a sacrificial layer on a carrier substrate. A flexible display substrate is formed on the sacrificial layer, with a plurality of release openings that extend through the flexible display substrate to the sacrificial layer. An array of LEDs and a plurality of microchips are transferred onto the flexible display substrate to form a flexible display panel. The sacrificial layer is selectively removed such that the flexible display panel attaches to the carrier substrate by a plurality of support posts. The flexible display panel is removed from the carrier substrate and is electrically coupled with display components to form a flexible display system.

Abstract translation: 描述了柔性显示面板及其形成方法。 柔性显示系统的制造方法包括在载体基板上形成牺牲层。 在牺牲层上形成柔性显示基板，其中多个释放开口延伸穿过柔性显示基板至牺牲层。 将LED阵列和多个微芯片转移到柔性显示基板上以形成柔性显示面板。 选择性地去除牺牲层，使得柔性显示面板通过多个支撑柱附接到载体基板。 柔性显示面板从载体基板移除并与显示部件电耦合以形成柔性显示系统。

公开(公告)号：US09314930B2

公开(公告)日：2016-04-19

申请号：US13715591

申请日：2012-12-14

Applicant: Luxvue Technology Corporation

Inventor： Dariusz Golda ,  John A. Higginson ,  Andreas Bibl

IPC: B23P19/00 ,  B25J15/00 ,  B25J7/00 ,  B81C99/00 ,  H01L23/00

CPC classification number: B25J15/0085 ,  B25J7/00 ,  B81C99/002 ,  H01L24/75 ,  H01L2224/7598 ,  Y10T29/53174

Abstract: Systems and methods for transferring a micro device from a carrier substrate include, in an embodiment, a micro pick up array structure to allow the micro pick up array to automatically align with the carrier substrate. Deflection of the micro pick up array may be detected to control further movement of the micro pick up array.

Abstract translation: 在一个实施例中，用于从载体衬底传送微器件的系统和方法包括微拾取阵列结构，以允许微拾取阵列自动与载体衬底对准。 可以检测微拾取阵列的偏转以控制微拾取阵列的进一步移动。

公开(公告)号：US09255001B2

公开(公告)日：2016-02-09

申请号：US13710438

申请日：2012-12-10

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H05K1/00 ,  B81C99/00

CPC classification number: B81C99/002 ,  H01L21/6835 ,  H01L2221/68354

Abstract: A monopolar and bipolar micro device transfer head array and method of forming a monopolar and bipolar micro device transfer array are described. In an embodiment, a micro device transfer head array includes a base substrate, a first insulating layer formed over the base substrate, and an array of mesa structures. A second insulating layer may be formed over the mesa structure, a patterned metal layer over the second insulating layer, and a dielectric layer covering the metal layer.

Abstract translation: 描述了单极和双极微器件转移头阵列和形成单极和双极微器件转移阵列的方法。 在一个实施例中，微器件转移头阵列包括基底基板，形成在基底基板上的第一绝缘层和台面结构阵列。 可以在台面结构之上形成第二绝缘层，在第二绝缘层上形成图案化金属层，以及覆盖金属层的电介质层。

公开(公告)号：US09224629B2

公开(公告)日：2015-12-29

申请号：US14694808

申请日：2015-04-23

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L29/76 ,  H01L21/683 ,  H01L29/06 ,  H01L21/266 ,  B81C99/00 ,  B32B38/18 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H01L29/872

CPC classification number: H01L21/6833 ,  B32B38/18 ,  B81C99/002 ,  H01L21/266 ,  H01L21/3083 ,  H01L21/76264 ,  H01L24/75 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66143 ,  H01L29/66348 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725 ,  H01L2224/7598 ,  H01L2924/1461 ,  H02N13/00 ,  Y10T156/17

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

公开(公告)号：US09178123B2

公开(公告)日：2015-11-03

申请号：US13710443

申请日：2012-12-10

Applicant: LuxVue Technology Corporation

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Hsin-Hua Hu

IPC: H01L33/60 ,  H01L25/075

CPC classification number: H01L25/0753 ,  H01L25/167 ,  H01L33/06 ,  H01L33/36 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/83 ,  H01L2224/92244 ,  H01L2224/95 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

Abstract translation: 描述了发光器件的反射堤结构。 反射堤结构可以包括衬底，衬底上的绝缘层，以及绝缘层中的堤开口阵列，每个堤开口包括底表面和侧壁。 反射层跨越绝缘层中每个堤开口的侧壁。

公开(公告)号：USD738749S1

公开(公告)日：2015-09-15

申请号：US29476851

申请日：2013-12-17

Applicant: Andreas Bibl ,  Kapil V. Sakariya ,  Vikram Pavate ,  Joseph Kennelly-Ullman

Designer： Andreas Bibl ,  Kapil V. Sakariya ,  Vikram Pavate ,  Joseph Kennelly-Ullman

公开(公告)号：US20150169011A1

公开(公告)日：2015-06-18

申请号：US14109864

申请日：2013-12-17

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  Kapil V. Sakariya ,  Vikram Pavate

IPC: G06F1/18 ,  G06F3/042 ,  G06F1/16 ,  G06F3/041

CPC classification number: H01L25/167 ,  G04G9/10 ,  G06F1/163 ,  G06F1/1652 ,  G06F3/0412 ,  G06F3/042 ,  G06F3/14 ,  G09G3/32 ,  G09G2380/02 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5387 ,  H01L25/0753 ,  H01L31/0216 ,  H01L31/16 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H05K1/115 ,  H05K1/147 ,  H05K1/189 ,  H05K2201/10106 ,  H05K2201/10128 ,  H01L2924/00

Abstract: A display module and system applications including a display module are described. The display module may include a display substrate including a front surface, a back surface, and a display area on the front surface. A plurality of interconnects extend through the display substrate from the front surface to the back surface. An array of light emitting diodes (LEDs) are in the display area and electrically connected with the plurality of interconnects, and one or more driver circuits are on the back surface of the display substrate. Exemplary system applications include wearable, rollable, and foldable displays.

Abstract translation: 描述了包括显示模块的显示模块和系统应用。 显示模块可以包括前表面，后表面和前表面上的显示区域的显示基板。 多个互连件从前表面延伸到后表面。 一组发光二极管（LED）在显示区域中并与多个互连电连接，一个或多个驱动电路位于显示基板的背面。 示例性的系统应用包括可穿戴的，可滚动的和可折叠的显示器。

公开(公告)号：US09044926B2

公开(公告)日：2015-06-02

申请号：US14221071

申请日：2014-03-20

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L29/76 ,  B32B38/18 ,  H01L29/06 ,  H01L21/266 ,  B81C99/00 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H01L29/872

CPC classification number: H01L21/6833 ,  B32B38/18 ,  B81C99/002 ,  H01L21/266 ,  H01L21/3083 ,  H01L21/76264 ,  H01L24/75 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66143 ,  H01L29/66348 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725 ,  H01L2224/7598 ,  H01L2924/1461 ,  H02N13/00 ,  Y10T156/17

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

Abstract translation: 描述了一种兼容的双极微器件传输头阵列和从SOI衬底形成兼容的双极微器件传输阵列的方法。 在一个实施例中，柔性双极微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括第一和第二硅互连以及与第一和第二硅互连电连接并可偏转到基底基板和硅电极之间的一个或多个空腔中的第一和第二硅电极阵列。