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    ELECTRONIC DEVICE, METHOD OF MANUFACTURING THE SAME, AND OSCILLATOR
    31.
    发明申请
    ELECTRONIC DEVICE, METHOD OF MANUFACTURING THE SAME, AND OSCILLATOR 有权
    电子设备，其制造方法和振荡器

    公开(公告)号：US20140070900A1

    公开(公告)日：2014-03-13

    申请号：US14018686

    申请日：2013-09-05

    Applicant: Seiko Epson Corporation

    Inventor： Yoji Kitano ,  Norio Okuyama

    IPC: H05K5/02

    CPC classification number: H05K5/0217 ,  B81B7/0041 ,  B81B2201/0285 ,  B81B2203/0118 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0163 ,  H01L23/053 ,  H01L2924/0002 ,  Y10T29/49002 ,  H01L2924/00

    Abstract: An electronic device includes a substrate, a cavity part formed above the substrate with a functional device placed therein, a coating structure that defines the cavity part, and the coating structure has a first surrounding wall formed around the cavity part above the substrate, a second surrounding wall formed around the cavity part above the first surrounding wall, a coating layer that defines an upper surface of the cavity part, wherein the second surrounding wall is located inside the first surrounding wall in a plan view.

    Abstract translation: 一种电子设备，包括：衬底，形成在衬底上方的功能器件的空腔部分，其中限定空腔部分的涂层结构，并且涂层结构具有围绕衬底上方的空腔部分形成的第一环绕壁， 形成在第一周围壁上方的空腔部分周围的围绕壁，其形成限定空腔部分的上表面的涂层，其中第二周围壁在俯视图中位于第一周围壁的内部。

    DEVICE FOR CONVERTING MECHANICAL ENERGY INTO ELECTRICAL ENERGY
    32.
    发明申请
    DEVICE FOR CONVERTING MECHANICAL ENERGY INTO ELECTRICAL ENERGY 审中-公开
    将机械能转换为电能的装置

    公开(公告)号：US20130241346A1

    公开(公告)日：2013-09-19

    申请号：US13989885

    申请日：2011-11-28

    Applicant: Sebastien Boisseau ,  Ghislain Despesse

    Inventor： Sebastien Boisseau ,  Ghislain Despesse

    IPC: H02N1/00

    CPC classification number: H02N1/002 ,  B81B3/0086 ,  B81B2201/0285 ,  H02N1/08 ,  Y10T29/49226

    Abstract: An apparatus for converting mechanical vibrational energy into electrical power includes first and second collecting electrodes configured for connection to terminals of an electrical load, and an electret placed facing the first electrode. The electret is mounted so as to move relative to the first electrode in one degree-of-freedom in a plane. Relative movement between the electret and the first electrode induces a potential difference across the electrodes. The electret has a continuous layer and a series of protrusions, each of which extends perpendicular to the plane. These protrusions are distributed in the degree-of-freedom with a first pitch, which is smaller than the travel between the first electrode and the electret. The first electrode has faces facing the electret. These faces are distributed in the degree-of-freedom with a second pitch identical to the first pitch.

    Abstract translation: 用于将机械振动能转换为电力的装置包括构造成用于连接到电负载的端子的第一和第二集电电极以及面向第一电极放置的驻极体。 驻极体被安装成相对于第一电极在平面内的一个自由度上移动。 驻极体和第一电极之间的相对运动在电极两端产生电位差。 驻极体具有连续层和一系列突起，每个突起垂直于平面延伸。 这些突起以比第一电极和驻极体之间的行进小的第一间距以自由度分布。 第一电极具有面向驻极体的面。 这些面以与第一间距相同的第二间距以自由度分布。

    Micro-Electromechanical System
    35.
    发明公开
    Micro-Electromechanical System 审中-公开

    公开(公告)号：US20240182293A1

    公开(公告)日：2024-06-06

    申请号：US18287721

    申请日：2022-04-12

    Applicant: Technische Universität Wien

    Inventor： Daniel PLATZ ,  Ulrich SCHMID ,  Jonas HAFNER

    IPC: B81B3/00 ,  G01C19/5712 ,  G01Q60/24 ,  H10N30/30

    CPC classification number: B81B3/0081 ,  G01C19/5712 ,  G01Q60/24 ,  H10N30/302 ,  H10N30/304 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0285

    Abstract: A micro-electromechanical system (1) comprising: a sensor device (2), with a measuring deformer (3) exhibiting an effective temperature T1; a high-frequency resonator (4) that is mechanically coupled to the sensor device (2) and can interact with the measuring deformer (3); an energy converter (7) that is operatively connected to the high-frequency resonator (4) and is configured to excite the high-frequency resonator (4) into a vibration state, wherein, through the interaction of the vibrating high-frequency resonator (4) with the measuring deformer (3), energy can be transferred from the measuring deformer (3) to the high-frequency resonator (4) in such a manner that the measuring deformer (3) after the energy transfer exhibits an effective temperature T2 lower than T1.

    Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure
    40.
    发明授权
    Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure 有权
    具有单晶束的集成半导体器件，制造方法和设计结构

    公开(公告)号：US09105751B2

    公开(公告)日：2015-08-11

    申请号：US13294603

    申请日：2011-11-11

    Applicant: David L. Harame ,  Anthony K. Stamper

    Inventor： David L. Harame ,  Anthony K. Stamper

    IPC: H01L21/00 ,  H01L21/84 ,  H01L27/12 ,  H03H3/02 ,  H03H9/10 ,  H03H9/17 ,  H01L41/113 ,  H03H1/00 ,  H03H9/24 ,  H03H9/15

    CPC classification number: B81B3/0027 ,  B81B2201/0285 ,  H01L21/84 ,  H01L27/1203 ,  H01L41/1136 ,  H01L2224/73265 ,  H03H3/02 ,  H03H9/1007 ,  H03H9/173 ,  H03H2001/0064 ,  H03H2003/027 ,  H03H2009/155 ,  H03H2009/241

    Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.

    Abstract translation: 提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器，制造方法和设计结构。 该方法包括从绝缘体上的硅层形成单晶束。 该方法还包括在单晶束上提供绝缘体材料涂层。 该方法还包括通过暴露出绝缘体下方的晶片的绝缘体材料形成通孔。 绝缘体材料保留在单晶束上。 该方法还包括在通孔和绝缘体材料上提供牺牲材料。 该方法还包括在牺牲材料上提供盖子。 该方法进一步包括通过盖子排出牺牲材料和在单一结晶束下方的晶片的一部分，以在单晶束之下形成单结晶束上方的上腔和晶片中的下腔。

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