YTTRIUM OXIDE MATERIAL, MEMBER FOR SEMICONDUCTOR-MANUFACTURING APPARATUS, AND METHOD FOR PRODUCING YTTRIUM OXIDE MATERIAL
    38.
    发明申请
    YTTRIUM OXIDE MATERIAL, MEMBER FOR SEMICONDUCTOR-MANUFACTURING APPARATUS, AND METHOD FOR PRODUCING YTTRIUM OXIDE MATERIAL 有权
    氧化钛氧化物材料,半导体制造装置的制造方法以及生产氧化钛材料的方法

    公开(公告)号:US20090233087A1

    公开(公告)日:2009-09-17

    申请号:US12400194

    申请日:2009-03-09

    IPC分类号: B32B5/16 C09K3/00

    摘要: An electrostatic chuck that is a member for a semiconductor-manufacturing apparatus contains an yttrium oxide material containing first inorganic particles and second inorganic particles. The first inorganic particles form solid solutions in yttrium oxide, can be precipitated from yttrium oxide, and are present in grains of yttrium oxide. The second inorganic particles can form solid solutions in the first inorganic particles, are unlikely to form any solid solution in yttrium oxide, and are present at boundaries between the yttrium oxide grains. The first inorganic particles contain at least one of ZrO2 and HfO2. The second inorganic particles contain at least one selected from the group consisting of MgO, CaO, SrO, and BaO. The yttrium oxide material is produced in such a manner that solid solution particles are prepared by mixing and firing the first and second inorganic particles and are mixed with yttrium oxide and the mixture is fired.

    摘要翻译: 作为半导体制造装置的构件的静电卡盘包含含有第一无机颗粒和第二无机颗粒的氧化钇材料。 第一种无机颗粒在氧化钇中形成固溶体,可以从氧化钇中沉淀出来,并存在于氧化钇颗粒中。 第二无机颗粒可以在第一无机颗粒中形成固溶体,不可能在氧化钇中形成任何固溶体,并且存在于氧化钇颗粒之间的边界处。 第一无机颗粒含有ZrO 2和HfO 2中的至少一种。 第二无机颗粒含有选自MgO,CaO,SrO和BaO中的至少一种。 以这样的方式制造氧化钇材料,即通过混合和烧制第一和第二无机颗粒并与氧化钇混合制备固溶体颗粒,并将混合物烧制。