公开(公告)号：US5053244A

公开(公告)日：1991-10-01

申请号：US158217

申请日：1988-02-19

Applicant: Jorg Kieser ,  Michael Geisler ,  Rolf Wilhelm ,  Eberhard Rauchle

Inventor： Jorg Kieser ,  Michael Geisler ,  Rolf Wilhelm ,  Eberhard Rauchle

IPC: C23C16/511 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32275 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32366 ,  H01J37/32678 ,  H05H1/46

Abstract: The invention relates to an apparatus for producing a plasma and treating substrates therein. The plasma produced by means of microwaves serves to coat a substrate which is situated in a chamber (5) having metal walls (6,7,12,13). The microwaves are repeatedly reflected at the metal walls (6,7,12,13), so that the chamber (5) has numerous microwave modes. By means of permanent magnets, which are placed either inside the chamber (5) or outside the chamber (5) in the vicinity of the substrate that is to be coated, it is possible to produce within this chamber (5) an electron-cyclotron resonance which permits a locally controlled ignition of the plasma.

Abstract translation: 本发明涉及一种用于生产等离子体和处理基板的设备。 通过微波产生的等离子体用于涂覆位于具有金属壁（6,7,12,13）的腔室（5）中的基底。 微波在金属壁（6,7,12,13）处反复反射，使得腔室（5）具有许多微波模式。 通过将永久磁铁放置在腔室（5）的内部或室（5）外部的待涂覆衬底附近，可以在该腔室（5）内产生电子回旋加速器 允许局部控制等离子体点火的共振。

公开(公告)号：US4971651A

公开(公告)日：1990-11-20

申请号：US475266

申请日：1990-02-05

Applicant: Seiichi Watanabe ,  Makoto Nawata ,  Ryooji Fukuyama ,  Yutaka Kakehi ,  Saburo Kanai ,  Keiji Ueyama

Inventor： Seiichi Watanabe ,  Makoto Nawata ,  Ryooji Fukuyama ,  Yutaka Kakehi ,  Saburo Kanai ,  Keiji Ueyama

IPC: H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/32192 ,  H01J37/32275

Abstract: This invention relates to a microwave plasma processing method and apparatus.An electromagnetic field intensity distribution of a microwave, which is incident into a plasma generation chamber and is again incident due to irregular reflection, is made uniform by uniforming means fixed inside a waveguide, a processing gas is converted to plasma by use of the microwave having the uniformed electromagnetic field intensity distribution, and a sample is plasma-processed by the resulting plasma. Accordingly, the electro-magnetic field of the microwave, which is incident, and is again incident, into the plasma generation region and locally increases a plasma density, is absorbed, attenuated or diffused by the uniforming means so that the distribution of the plasma density is made uniform and uniform processing can be effected.

Abstract translation: 本发明涉及微波等离子体处理方法和装置。 入射到等离子体产生室中并且由于不规则反射再次入射的微波的电磁场强度分布通过固定在波导内部的均匀装置而被均匀化，处理气体通过使用具有 均匀的电磁场强度分布和样品由所得等离子体进行等离子体处理。 因此，入射并再次入射到等离子体产生区域中并局部增加等离子体密度的微波的电磁场被均匀化装置吸收，衰减或扩散，使得等离子体密度的分布 制成均匀且均匀的加工。

公开(公告)号：US4745000A

公开(公告)日：1988-05-17

申请号：US8442

申请日：1987-01-29

Applicant: Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

Inventor： Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

IPC: C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  C23C11/02

CPC classification number: H01J37/3222 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32275 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: An improved method of fabricating the thin film layers of an electrostatic image producing device utilizing microwave energy by operating at substantially the minimum of the pressure-power curve for the particular geometry of reaction vessel and composition of reaction gases being utilized.

Abstract translation: 一种改进的制造静电图像产生装置的薄膜层的方法，该装置利用微波能量，通过对反应容器的特定几何形状和组成的反应气体的组成进行基本上最小的压力 - 功率曲线的操作。

公开(公告)号：US4737379A

公开(公告)日：1988-04-12

申请号：US32263

申请日：1987-03-31

Applicant: Stephen J. Hudgens ,  Annette G. Johncock ,  Stanford R. Ovshinsky ,  Prem Nath

Inventor： Stephen J. Hudgens ,  Annette G. Johncock ,  Stanford R. Ovshinsky ,  Prem Nath

IPC: C23C16/50 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/42 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  B05D3/06

CPC classification number: H01J37/32192 ,  B32B17/10018 ,  C23C16/30 ,  C23C16/511 ,  H01J37/3222 ,  H01J37/32275 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  B32B2375/00

Abstract: A method of depositing a substantially hydrogen free or controlled hydrogen content multi-element alloy film on a substrate. The method utilizes a microwave excited plasma of a hydrogen free precursor gas to deposit a hard, adherent coating. The method comprises providing a substrate to be coated in a vacuum deposition chamber, with a source of microwave energy coupled to the vacuum deposition chamber. A substantially hydrogen free reaction gas precursor composition is introduced into the reaction chamber at a pressure corresponding substantially to a pressure minimum of the modified Paschen curve for the reaction gas precursor composition. Activation of the source of microwave energy excites the reaction gas precursor composition, in this way forming a plasma in the vacuum deposition chamber to deposit a substantially hydrogen free or controlled hydrogen content multi-element alloy film on the substrate.

Abstract translation: 将基本上无氢或受控的含氢多元素合金膜沉积在基底上的方法。 该方法利用无氢前体气体的微波激发等离子体沉积硬的粘附涂层。 该方法包括在真空沉积室中提供待涂覆的基底，其中微波能量源耦合到真空沉积室。 将基本上无氢的反应气体前体组合物以基本上对应于反应气体前体组合物的改性Paschen曲线的压力最小值的压力引入反应室中。 微波能量源的激活激发反应气体前体组合物，以这种方式在真空沉积室中形成等离子体，以在基板上沉积基本上无氢或受控的含氢多元素合金膜。

公开(公告)号：US4615905A

公开(公告)日：1986-10-07

申请号：US725616

申请日：1985-04-22

Applicant: Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

Inventor： Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

IPC: C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  C23C11/02

CPC classification number: H01J37/3222 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32275 ,  H01L21/02381 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: A method of depositing a semiconductor alloy film onto a substrate by activating groups of free radicals and incorporating desired ones of the activated groups into the film.

Abstract translation: 一种通过激活自由基基团并将期望的活化基团并入膜中将半导体合金膜沉积到基底上的方法。

公开(公告)号：US20150107773A1

公开(公告)日：2015-04-23

申请号：US14519688

申请日：2014-10-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki SHINTAKU ,  Takashi SUZUKI ,  Masahiko KONNO ,  Michitaka AITA ,  Taizo OKADA ,  Hideo KATO

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32192 ,  H01J37/32275

Abstract: A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member.

Abstract translation: 一种用于通过微波激发处理气体的等离子体处理装置，包括以环形形状延伸的聚焦环，围绕中心轴缠绕的第一管状部件沿着聚焦环下方的下部电极的外周延伸，环状 由设置在聚焦环和第一管状构件之间的介电材料制成的构件，沿着第一管状构件的外周延伸的第二管状构件和抑制经由聚焦环传播通过第一管状构件的微波的扼流圈， 会员。 并且所述扼流部从所述第一管状部件的外周沿所述第一管状体的直径方向向外突出，并且沿着所述第一管状部件的周缘呈环状延伸，所述扼流部被所述第二管状部件覆盖。

公开(公告)号：US07732227B2

公开(公告)日：2010-06-08

申请号：US11517389

申请日：2006-09-08

Applicant: Eric J. Strang ,  Richard Parsons

Inventor： Eric J. Strang ,  Richard Parsons

IPC: H01L21/66 ,  G01R31/26 ,  C23C14/54 ,  C23F1/00

CPC classification number: H01L21/67253 ,  G01B15/02 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299 ,  H01L21/67069

Abstract: A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

Abstract translation: 墙膜监测系统包括等离子体处理室中的具有凹面的第一和第二微波反射镜。 第二反射镜的凹面与第一反射镜的凹面相对。 电源耦合到第一反射镜并且被配置为产生微波信号。 检测器耦合到第一反射镜和第二反射镜中的至少一个并且被配置为测量微波信号的真空谐振电压。 控制系统连接到检测器，该检测器比较第一测量电压和第二测量电压，并确定第二电压是否超过阈值。 一种监测等离子体室中的壁膜的方法包括将晶片装载在室中，将微波信号输出的频率设定为谐振频率，以及测量微波信号的第一真空谐振电压。 该方法包括处理晶片，测量微波信号的第二真空谐振电压，以及使用第一测量电压作为参考值来确定第二测量电压是否超过阈值。

公开(公告)号：US07544269B2

公开(公告)日：2009-06-09

申请号：US10490850

申请日：2002-10-24

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J7/24 ,  H05B31/26

CPC classification number: H01L21/67253 ,  G01B15/02 ,  G01B15/04 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/32862 ,  H01J37/32935 ,  H01J37/3299 ,  H01L21/67069

Abstract: A plasma processing system including a plasma chamber (120) having a substrate holder (128) and a monitoring system (130). The monitoring system (130) includes a microwave mirror (140) having a concave surface (142) located opposite the holder (128) and a power source (160) is coupled thereto that produces a microwave signal perpendicular to a wafer plane (129) of the holder (128). A detector (170) is coupled to the mirror (140) and measures a vacuum resonance voltage of the signal within the chamber (120). A control system (180) is provided that measures a first voltage during a vacuum condition and a second voltage during a plasma condition and determines an electron density from a difference between the second voltage and the first voltage. The processing system (110) can include a plurality of monitoring systems (130a, 130b, 130c) having mirrors (140a, 140b, 140c) provided in a spatial array located opposite the substrate holder (128). A method of monitoring electron density in the processing system is provided that includes loading a wafer, setting a frequency of a microwave signal to a resonance frequency, and measuring a first voltage of the signal during a vacuum condition. The method further includes processing the wafer (114), measuring a second voltage of the signal during a plasma condition, and determining an electron density from a difference between the second voltage and the first voltage.

Abstract translation: 一种等离子体处理系统，包括具有衬底保持器（128）和监视系统（130）的等离子体室（120）。 监测系统（130）包括具有与保持器（128）相对的凹表面（142）的微波反射镜（140），并且电源（160）耦合到其上，产生垂直于晶片平面（129）的微波信号， （128）。 检测器（170）耦合到反射镜（140）并且测量腔室（120）内的信号的真空谐振电压。 提供一种控制系统（180），其在等离子体状态期间测量真空状态期间的第一电压和第二电压，并根据第二电压和第一电压之间的差确定电子密度。 处理系统（110）可以包括多个监控系统（130a，130b，130c），其具有设置在与衬底保持器（128）相对的空间阵列中的反射镜（140a，140b，140c）。 提供了一种在处理系统中监测电子密度的方法，包括加载晶片，将微波信号的频率设置为谐振频率，以及在真空条件期间测量信号的第一电压。 该方法还包括处理晶片（114），在等离子体状态期间测量信号的第二电压，以及从第二电压和第一电压之间的差确定电子密度。

公开(公告)号：US20080006371A1

公开(公告)日：2008-01-10

申请号：US11773539

申请日：2007-07-05

Applicant: Sunao MURAOKA ,  Hideki NAGAOKA ,  Masakazu BAN ,  Cai TIAN

Inventor： Sunao MURAOKA ,  Hideki NAGAOKA ,  Masakazu BAN ,  Cai TIAN

IPC: H01L21/306

CPC classification number: H01J37/32192 ,  H01J37/32275 ,  H01J2237/0206

Abstract: A gate valve includes a plate-shaped valve element which is rectangular-shaped to suit the shape of an opening of a processing chamber and has a size larger than the opening. A hermetically sealing member to perform hermetic sealing by abutting on and being pressed against an outer side of the processing chamber is provided in the valve element. A microwave reflecting mechanism which is formed in a groove shape so as to surround a periphery of the hermetically sealing member is provided at an outer peripheral portion of the hermetically sealing member.

Abstract translation: 闸阀包括板形阀元件，其为矩形以适合处理室的开口的形状并且具有大于开口的尺寸。 在阀元件中设置有通过抵靠处理室的外侧并且被压靠在处理室的外侧来进行气密密封的气密密封构件。 在气密密封部件的外周部设置微波反射机构，其形成为围绕密封部件周围的槽状。

公开(公告)号：US07263447B2

公开(公告)日：2007-08-28

申请号：US10495864

申请日：2003-01-30

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/00 ,  G01F1/00

CPC classification number: H01J37/32275 ,  H01J37/32192 ,  H01J37/3299 ,  H01L21/67069 ,  H01L21/67253

Abstract: An equipment status monitoring system and method of operating thereof is described. The equipment status monitoring system includes at least one microwave mirror in a plasma processing chamber forming a multi-modal resonator. A power source is coupled to a mirror and configured to produce an excitation signal extending along an axis generally perpendicular to a substrate. A detector is coupled to a mirror and configured to measure an excitation signal. A control system is connected to the detector that compares a measured excitation signal to a normal excitation signal in order to determine a status of the material processing equipment.

Abstract translation: 描述了设备状态监视系统及其操作方法。 设备状态监测系统包括形成多模谐振器的等离子体处理室中的至少一个微波反射镜。 电源耦合到反射镜并且被配置为产生沿着大致垂直于衬底的轴延伸的激励信号。 检测器耦合到反射镜并且被配置为测量激励信号。 控制系统连接到检测器，其将测量的激励信号与正常激励信号进行比较，以便确定材料处理设备的状态。