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    Method of fabricating semiconductor laser device and semiconductor laser device
    32.
    发明申请
    Method of fabricating semiconductor laser device and semiconductor laser device 失效
    制造半导体激光器件和半导体激光器件的方法

    公开(公告)号：US20030039286A1

    公开(公告)日：2003-02-27

    申请号：US10210382

    申请日：2002-07-31

    发明人： Masato Doi ,  Toyoharu Oohata

    IPC分类号： H01L021/00 ,  H01S005/00

    CPC分类号： H01S5/2201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/0422 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173

    摘要： A method of fabricating a semiconductor laser device includes the steps of forming semiconductor layers composed of a first conductive type cladding layer, an active layer, and a second conductive type cladding layer on a substrate, and peeling a device formation region of the semiconductor layers from the substrate and simultaneously forming a resonance mirror on an end portion of the device formation region by irradiating the device formation region with energy beams traveling from the back surface side of the substrate. With this configuration, it is possible to peel a device from a substrate and also form a flat resonance mirror with less damage of crystal by laser abrasion, and further to easily form a high quality resonance mirror without increasing the number of fabrication steps.

    摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：在衬底上形成由第一导电型包覆层，有源层和第二导电型包覆层构成的半导体层，并将半导体层的器件形成区域从 并且通过从衬底的背面侧行进的能量束照射器件形成区域，同时在器件形成区域的端部上形成共振反射镜。 通过这种构造，可以从基板剥离器件，并且还可以通过激光磨损形成具有较少的晶体损伤的平坦共振镜，并且进一步容易地形成高质量的谐振镜而不增加制造步骤的数量。

    Methods for manufacturing group III nitride compound semiconductor laser diodes
    33.
    发明授权
    Methods for manufacturing group III nitride compound semiconductor laser diodes 失效
    制造III族氮化物半导体激光二极管的方法

    公开(公告)号：US5953581A

    公开(公告)日：1999-09-14

    申请号：US840895

    申请日：1997-04-17

    申请人： Shiro Yamasaki ,  Seiji Nagai ,  Masayoshi Koike

    发明人： Shiro Yamasaki ,  Seiji Nagai ,  Masayoshi Koike

    IPC分类号： H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/10 ,  H01S5/323 ,  H01S5/343 ,  H01L21/66

    CPC分类号： H01S5/32308 ,  H01S5/0203

    摘要： As a method for manufacturing a laser diode using a group III nitride compound semiconductor, independent dry etching process for forming electrodes and mirror facets are adopted. A portion of an upper semiconductor layer is etched for forming a window. An electrode for a lower semiconductor layer is formed through the window. After electrodes are formed, then, etching is carried out for forming mirror facets of laser cavity. This method realizes high oscillation, because the method enhances parallel and vertical degrees of the mirror facets. Further, cleanness of the mirror facets are improved, because they are formed after the electrodes are formed. The method further lowers resistivity of lower semiconductor layer, because its thickness can be controlled easily without etching excessively. As a result, luminous efficiency is improved.

    摘要翻译： 作为使用III族氮化物化合物半导体制造激光二极管的方法，采用用于形成电极和镜面的独立的干蚀刻工艺。 上部半导体层的一部分被蚀刻以形成窗口。 通过窗口形成下半导体层用电极。 在形成电极之后，进行蚀刻以形成激光腔的镜面。 该方法实现了高振荡，因为该方法增强了镜面的平行和垂直度。 此外，改善了镜面的清洁度，因为它们在形成电极之后形成。 该方法进一步降低下半导体层的电阻率，因为其厚度可以容易地控制，而不会过度蚀刻。 结果，发光效率提高。

    Semiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrode
    34.
    发明授权
    Semiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrode 失效
    半导体激光二极管和半导体激光二极管阵列包括电镀散热片（PHS）电极

    公开(公告)号：US5608749A

    公开(公告)日：1997-03-04

    申请号：US94223

    申请日：1993-07-21

    申请人： Hirotaka Kizuki

    发明人： Hirotaka Kizuki

    IPC分类号： H01L21/288 ,  H01L21/306 ,  H01L23/36 ,  H01S5/00 ,  H01S5/02 ,  H01S5/024 ,  H01S5/042 ,  H01S3/04

    CPC分类号： H01S5/024 ,  H01S5/0201 ,  H01S5/0425 ,  H01L2924/0002 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0207 ,  H01S5/02461 ,  H01S5/1082 ,  H01S5/4031

    摘要： A semiconductor laser diode having a selective PHS structure includes a semiconductor substrate having opposite first and second main surfaces, a laser diode structure disposed on the first main surface, and a PHS electrode selectively buried in the second main surface wherein the laser diode structure is located in an area defined by a first pair of parallel lines running in a direction perpendicular to a resonator length direction and a second pair of parallel lines located at the side surfaces of the semiconductor substrate, the first pair of lines being located internally of front and rear facets of the semiconductor substrate, and the PHS electrode has a length in the resonator length direction no shorter than the active region in the resonator length direction. The heat radiating characteristic is improved, especially at the laser beam emitting facet.

    摘要翻译： 具有选择性PHS结构的半导体激光二极管包括具有相反的第一和第二主表面的半导体衬底，设置在第一主表面上的激光二极管结构和选择性地埋在第二主表面中的PHS电极，其中激光二极管结构位于 在由沿着与谐振器长度方向垂直的方向上延伸的第一对平行线和位于半导体衬底的侧表面处的第二对平行线限定的区域中，第一对线线位于前后方向内侧 半导体衬底的小平面和PHS电极的谐振器长度方向上的长度不小于谐振器长度方向上的有源区。 散热特性得到改善，特别是在激光束发射面上。

    Semiconductor laser element with excellent high-temperature characteristic and capable of being readily mounted on an optical circuit board
    35.
    发明授权
    Semiconductor laser element with excellent high-temperature characteristic and capable of being readily mounted on an optical circuit board 失效
    具有优异的高温特性并且能够容易地安装在光电路板上的半导体激光元件

    公开(公告)号：US5511089A

    公开(公告)日：1996-04-23

    申请号：US291498

    申请日：1994-08-17

    申请人： Hirohito Yamada

    发明人： Hirohito Yamada

    IPC分类号： H01S5/00 ,  G02B6/42 ,  H01S5/02 ,  H01S5/028 ,  H01S5/10 ,  H01S3/19 ,  G02B6/30

    CPC分类号： G02B6/4202 ,  H01S5/02 ,  H01S5/10 ,  H01S5/0203 ,  H01S5/021 ,  H01S5/028 ,  H01S5/1039

    摘要： In a semiconductor laser element which has a semiconductor block including a first end surface, a second end surface opposite to the first end surface, and a principal surface contiguous to the first and the second end surfaces, the internal end surface is defined by forming a groove from the principal surface, creating an internal end surface opposite to the second end surface and nearer to the second end surface than the first end surface is. The internal end surface serves as a front laser beam emitting surface while the second end surface serves as a rear laser beam emitting surface. Thus, an optical resonator is provided between the internal and the second end surfaces. The internal end surface is spaced apart from the second end surface by a length of 150 .mu.m, which is different from a length of the semiconductor block.

    摘要翻译： 在具有半导体块的半导体激光元件中，所述半导体块包括第一端面，与第一端面相反的第二端面以及与第一端面和第二端面邻接的主面，内端面通过形成 形成与第一端面相反并且比第一端面更靠近第二端面的内端面。 内端面用作前激光束发射表面，而第二端表面用作后激光束发射表面。 因此，在内部和第二端面之间设置有光学谐振器。 内端面与第二端面间隔开150μm的长度，与半导体块的长度不同。

    Method of making a semiconductor laser
    36.
    发明授权
    Method of making a semiconductor laser 失效
    制造半导体激光器的方法

    公开(公告)号：US5346854A

    公开(公告)日：1994-09-13

    申请号：US972015

    申请日：1992-11-06

    申请人： Hyung S. Ahn ,  Won T. Choi

    发明人： Hyung S. Ahn ,  Won T. Choi

    IPC分类号： G02B6/42 ,  H01S5/02 ,  H01S5/10 ,  H01S5/223 ,  H01L21/20

    CPC分类号： H01S5/0201 ,  G02B6/4202 ,  G02B6/4204 ,  H01S5/10 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0217 ,  H01S5/026 ,  H01S5/2232

    摘要： A semiconductor laser including a compound semiconductor substrate of an n-type, a semiconductor laser chip region defined at a center portion of an upper portion of the compound semiconductor substrate and provided at its front and rear surfaces with mirror surfaces for oscillating laser beams, and a pair of guide regions defined at opposite sides of the chip region, respectively, to be in contact with the semiconductor laser chip region. The chip region has a shape of a hexahedron. Together with the front and rear surfaces of the chip region, the guide regions define a cavity for coupling the chip region with external elements at the compound semiconductor substrate. The semiconductor laser also includes a first electrode formed over the chip region and guide regions and adapted to receive an electric power for generating laser beams and a second electrode formed beneath the semiconductor substrate and adapted to receive the electric power for generating laser beams, together with the first electrode.

    摘要翻译： 一种半导体激光器，包括n型化合物半导体衬底，半导体激光器芯片区域，其限定在所述化合物半导体衬底的上部的中心部分，并且在其前表面和后表面设置有用于振荡激光束的镜面;以及 分别限定在芯片区域的相对侧的与半导体激光器芯片区域接触的一对引导区域。 芯片区域具有六面体的形状。 与芯片区域的前表面和后表面一起，引导区域限定用于将芯片区域与化合物半导体衬底上的外部元件耦合的空腔。 半导体激光器还包括形成在芯片区域和引导区域上的第一电极，并且适于接收用于产生激光束的电力和形成在半导体衬底下方的第二电极，并且适于接收用于产生激光束的电力，以及 第一个电极。

    Method of cleaning a plurality of semiconductor devices
    37.
    发明授权
    Method of cleaning a plurality of semiconductor devices 失效
    清洁多个半导体器件的方法

    公开(公告)号：US5259925A

    公开(公告)日：1993-11-09

    申请号：US894479

    申请日：1992-06-05

    申请人： Robert W. Herrick ,  Joseph L. Levy ,  Danny J. Krebs

    发明人： Robert W. Herrick ,  Joseph L. Levy ,  Danny J. Krebs

    IPC分类号： H01L21/78 ,  H01S5/02 ,  H01L21/302 ,  B44C1/22

    CPC分类号： H01S5/0203 ,  H01L21/78 ,  H01S5/0202 ,  H01S5/0207 ,  Y10S148/028 ,  Y10S148/131 ,  Y10S438/978

    摘要： A method for cleaving semiconductor devices along planes accurately positioned. Resist is applied to a major surface of the semiconductor device and a mask is projected upon the resist covered major surface. The mask is opaque in those regions in which no cleave is desired. Following the exposure of the resist, the removal of the mask and the development of the resist, an ion beam is positioned incident upon the semiconductor surface such that ion beam etching occurs in the areas in which no resist covers the semiconductor structure. Once a sufficient depth is etched in the areas not covered with resist such that the strength of the semiconductor structure in those areas is significantly less than in those areas covered by resist, the ion beam etching process is ended and the resist is stripped from the semiconductor structure. Subsequently, force is applied within the area in which the ion beam etching occurred to cleave the semiconductor structure within that region. Such cleaving may occur either prior or subsequent to etching of facets for the semiconductor devices.

    摘要翻译： 一种沿准确定位的平面切割半导体器件的方法。 抗蚀剂被施加到半导体器件的主表面，并且掩模被投影在被覆盖的主表面上。 在不需要劈裂的区域中，掩模是不透明的。 在抗蚀剂暴露之后，除去掩模和显影抗蚀剂，离子束被定位入入半导体表面，使得在没有抗蚀剂覆盖半导体结构的区域中发生离子束蚀刻。 一旦在未被抗蚀剂覆盖的区域中蚀刻足够的深度，使得那些区域中的半导体结构的强度显着小于由抗蚀剂覆盖的那些区域的强度，则离子束蚀刻工艺结束，并且抗蚀剂从半导体 结构体。 随后，在发生离子束蚀刻的区域内施加力以在该区域内切割半导体结构。 这种切割可以在蚀刻半导体器件的刻面之前或之后发生。

    High-power surface-emitting semiconductor injection laser with etched internal 45 degree and 90 degree micromirrors
    38.
    发明授权
    High-power surface-emitting semiconductor injection laser with etched internal 45 degree and 90 degree micromirrors 失效
    具有蚀刻内部45度和90度微镜的大功率表面发射半导体注入激光器

    公开(公告)号：US5253263A

    公开(公告)日：1993-10-12

    申请号：US850083

    申请日：1992-03-12

    申请人： Michael Jansen ,  Jane J. Yang ,  Szutsun S. Ou ,  Thomas J. Roth

    发明人： Michael Jansen ,  Jane J. Yang ,  Szutsun S. Ou ,  Thomas J. Roth

    IPC分类号： H01S3/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/18 ,  H01S3/19

    CPC分类号： H01S5/18 ,  H01S5/005 ,  H01S5/0203 ,  H01S5/0207 ,  H01S5/026 ,  H01S5/0267 ,  H01S5/1085 ,  H01S5/2027

    摘要： A surface-emitting semiconductor injection laser for use in fabricating high-power two-dimensional monolithic laser arrays. The surface-emitting semiconductor laser includes a substrate and an active layer and a pair of cladding layers formed on the substrate. A folded resonator cavity is formed by highly-reflective 45.degree. and 90.degree. micromirrors that are etched at either end of the active layer and by a partially-reflective reflector that is positioned between the 45.degree. micromirror and the substrate for outcoupling the laser light from the resonator cavity. The semiconductor laser is mounted junction down on a heat sink to position the active layer close to the heat sink for good heat dissipation at high power levels. In one preferred embodiment of the present invention, the substrate is optically opaque and an opening is etched in the substrate for outcoupling the laser light. In another preferred embodiment of the invention, the substrate is optically transparent and a microlens is formed on the substrate to collimate the laser light.

    摘要翻译： 一种用于制造大功率二维单片激光器阵列的表面发射半导体注入激光器。 表面发射半导体激光器包括衬底和形成在衬底上的有源层和一对覆层。 折叠的谐振腔由高反射的45°和90°的微反射镜形成，这些反射镜在有源层的两端蚀刻，部分反射的反射镜位于45°微镜和衬底之间，用于将激光 谐振腔。 将半导体激光器安装在散热片上，将活性层定位在靠近散热片的位置，以便在高功率水平下实现良好的散热。 在本发明的一个优选实施例中，衬底是光学不透明的，并且在衬底中蚀刻开口用于输出激光。 在本发明的另一个优选实施例中，衬底是光学透明的，并且在衬底上形成微透镜以准直激光。

    Improved planar etched mirror facets
    39.
    发明授权
    Improved planar etched mirror facets 失效
    改进的平面蚀刻镜面

    公开(公告)号：US5103493A

    公开(公告)日：1992-04-07

    申请号：US669817

    申请日：1991-03-15

    申请人： Peter L. Buchmann ,  Peter Vettiger ,  Otto Voegeli ,  David J. Webb

    发明人： Peter L. Buchmann ,  Peter Vettiger ,  Otto Voegeli ,  David J. Webb

    IPC分类号： H01L21/302 ,  G02B6/122 ,  H01L21/3065 ,  H01L27/15 ,  H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/16 ,  H01S5/22

    CPC分类号： H01S5/22 ,  H01S5/028 ,  H01S5/16 ,  H01S5/0202 ,  H01S5/0203

    摘要： A method, and device produced therewith, for improving the planarity of etched mirror facets 18 of integrated optic structures with non-planar stripe waveguides, such as ridge or groove diode lasers or passive devices such as modulators and switches. The curvature of the mirror facet surface at the edges of the waveguide due to topographical, lithographical and etch process effects, causes detrimental phase distortions, and is avoided by widening the waveguide end near the mirror surface thereby shifting the curved facet regions away from the light mode region to surface regions where curvature is not critical.

    摘要翻译： 一种用于改进具有非平面条纹波导的集成光学结构的蚀刻镜面18（例如脊或沟槽二极管激光器）或无源器件（诸如调制器和开关）的平面度的方法和装置。 由于地形，光刻和蚀刻过程效应，波导边缘处的镜面表面的曲率造成有害的相位失真，并且通过加宽靠近镜面的波导端来避免，从而使弯曲的小面区域远离光线 模式区域到曲面不重要的表面区域。