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    MEMS resonator array structure and method of operating and using same
    31.
    发明授权
    MEMS resonator array structure and method of operating and using same 有权
    MEMS谐振器阵列结构及其操作和使用方法

    公开(公告)号：US07907035B2

    公开(公告)日：2011-03-15

    申请号：US12002894

    申请日：2007-12-18

    Applicant: Markus Lutz ,  Zhiyu Pan ,  Aaron Partridge

    Inventor： Markus Lutz ,  Zhiyu Pan ,  Aaron Partridge

    IPC: H03H9/05 ,  H03H9/09 ,  H03H9/46 ,  H03H9/50

    CPC classification number: H03B5/30 ,  H03H9/02259 ,  H03H9/02338 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/505 ,  H03H2009/0233 ,  H03H2009/02385 ,  H03H2009/0244 ,  H03H2009/02503

    Abstract: A MEMS array structure including a plurality of bulk mode resonators may include at least one resonator coupling section disposed between the plurality of bulk mode resonators. The plurality of resonators may oscillate by expansion and/or contraction in at least one direction/dimension. The MEMS array structure may include a plurality of sense electrodes and drive electrodes spaced apart from the plurality of bulk mode resonators by a gap. The MEMS array structure may further include at least one anchor coupling section disposed between the at least one resonator coupling section and a substrate anchor.

    Abstract translation: 包括多个体模式谐振器的MEMS阵列结构可以包括设置在多个体模式谐振器之间的至少一个谐振器耦合部分。 多个谐振器可以通过在至少一个方向/尺寸上的膨胀和/或收缩而振荡。 MEMS阵列结构可以包括多个感测电极和与多个体模式谐振器间隔开的间隙的驱动电极。 MEMS阵列结构还可以包括设置在至少一个谐振器耦合部分和基板锚固件之间的至少一个锚耦合部分。

    Method of manufacturing vibrating micromechanical structures
    32.
    发明授权
    Method of manufacturing vibrating micromechanical structures 有权
    制造振动微机械结构的方法

    公开(公告)号：US07836574B2

    公开(公告)日：2010-11-23

    申请号：US12164308

    申请日：2008-06-30

    Applicant: Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

    Inventor： Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

    IPC: H04R31/00

    CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/2447 ,  H03H9/462 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49826 ,  Y10T29/49861

    Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

    Abstract translation: 一种使用双晶片工艺制造单晶硅微机械谐振器的方法，其包括绝缘体上硅（SOI）或绝缘基底和谐振晶片，其中谐振器锚，电容气隙，隔离沟槽和对准标记 被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。

    VACUUM PACKAGED SINGLE CRYSTAL SILICON DEVICE
    33.
    发明申请
    VACUUM PACKAGED SINGLE CRYSTAL SILICON DEVICE 失效

    公开(公告)号：US20080261344A1

    公开(公告)日：2008-10-23

    申请号：US12164850

    申请日：2008-06-30

    Applicant: Ijaz H. Jafri ,  Galen P. Magendanz

    Inventor： Ijaz H. Jafri ,  Galen P. Magendanz

    IPC: H01L21/02

    CPC classification number: B81C1/00333 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/462 ,  H03H2009/02511

    Abstract: A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.

    Method of manufacturing vibrating micromechanical structures
    34.
    发明授权
    Method of manufacturing vibrating micromechanical structures 失效
    制造振动微机械结构的方法

    公开(公告)号：US07406761B2

    公开(公告)日：2008-08-05

    申请号：US11084978

    申请日：2005-03-21

    Applicant: Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

    Inventor： Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

    IPC: H05K3/20

    CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/2447 ,  H03H9/462 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49826 ,  Y10T29/49861

    Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

    Abstract translation: 一种使用双晶片工艺制造单晶硅微机械谐振器的方法，包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容气隙，隔离沟槽和对准标记 被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。

    Temperature compensated beam resonator
    37.
    发明授权
    Temperature compensated beam resonator 有权

    公开(公告)号：US10056877B2

    公开(公告)日：2018-08-21

    申请号：US14874522

    申请日：2015-10-05

    Applicant: Teknologian tutkimuskeskus VTT Oy

    Inventor： Antti Jaakkola ,  Panu Pekko ,  Mika Prunnila ,  Tuomas Pensala

    IPC: H03H9/24 ,  H03H3/10 ,  H03H9/02 ,  H03H3/04 ,  H03H3/007

    CPC classification number: H03H9/02448 ,  H03H3/0076 ,  H03H9/2405 ,  H03H9/2447 ,  H03H2009/241

    Abstract: The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm−3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

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