ESC TEMPERATURE CONTROL UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME

    公开(公告)号:US20240055241A1

    公开(公告)日:2024-02-15

    申请号:US18206089

    申请日:2023-06-06

    Abstract: There are provided an electrostatic chuck (ESC) temperature control unit capable of independently controlling multi-zones of an electrostatic chuck using an alternating current (AC) heater and a direct current (DC) heater, and a substrate treating apparatus including the same. The substrate treating apparatus includes: a housing; a substrate support unit; a shower head unit; a plasma generating unit; and an ESC temperature control unit, wherein the ESC temperature control unit which controls a temperature of the electrostatic chuck includes: a plurality of first heaters; a plurality of second heaters providing power different from that of the first heaters; and a control module controlling the first heaters and the second heaters, and the control module independently controls the first heaters and the second heaters.

    Apparatus and method for processing substrate

    公开(公告)号:US11897007B2

    公开(公告)日:2024-02-13

    申请号:US17832573

    申请日:2022-06-04

    Inventor: Yun Hwa Hong

    Abstract: Provided is an apparatus for processing a substrate. The apparatus for processing a substrate includes a base portion configured to provide a rotational force in a circumferential direction; a holding module located on the base portion and configured to hold the substrate; a nozzle module located above the base portion and configured to jet a chemical liquid onto the substrate on the holding module; and a scattering prevention module located on the base portion at a peripheral portion of the holding module and configured to, when the chemical liquid is scattered after being jetted onto the substrate, guide the scattered chemical liquid to be discharged, wherein the scattering prevention module guides the scattered chemical liquid with a variable movement caused by the rotational force.

    Apparatus and method for processing substrate

    公开(公告)号:US11897006B2

    公开(公告)日:2024-02-13

    申请号:US17740358

    申请日:2022-05-10

    CPC classification number: B08B3/022 B08B3/08 B08B3/14 B08B2203/0264

    Abstract: The present disclosure provides a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a substrate support unit configured to support a substrate, a liquid supply unit configured to supply a liquid containing any one of a chemical liquid and a cleaning liquid to the substrate supported by the substrate support unit, a processing container configured to accommodate the substrate support unit and recover the liquid supplied to the substrate from the liquid supply unit, and a capture module provided in the processing container to capture the liquid so as to suppress the liquid scattered from the substrate from being bounced back from the processing container and re-scattering.

    APPARATUSES FOR PROCESSING A SUBSTRATE AND METHODS OF PROCESSING A SUBSTRATE

    公开(公告)号:US20240042497A1

    公开(公告)日:2024-02-08

    申请号:US18492021

    申请日:2023-10-23

    CPC classification number: B08B7/0021 B08B13/00 H01L21/67011

    Abstract: An apparatus for processing a substrate may include an upper chamber, a lower chamber being combined with the upper chamber and separated from the upper chamber, and at least one driving member for moving the lower chamber in an upward direction and a downward direction. The least one driving member may include a supporting element for supporting the lower chamber, a first driving element for moving the lower chamber and the supporting element, a second driving element for moving the lower chamber, the supporting element and the first driving element, the second driving element being disposed adjacent to the first driving element, and a connecting element for connecting the first driving element to the second driving element. A processing space may be provided between the upper chamber and the lower chamber when the lower chamber is combined with the upper chamber.

    SEMICONDUCTOR LINE LOGISTICS PROCESSING SYSTEM AND METHOD

    公开(公告)号:US20240021455A1

    公开(公告)日:2024-01-18

    申请号:US18222305

    申请日:2023-07-14

    CPC classification number: H01L21/6773 H01L21/67733

    Abstract: A semiconductor line logistics processing system and method are provided. A semiconductor line logistics processing method includes selecting a first line facility including a first control module for logistics transfer within a semiconductor line; interlocking a second line facility including a second control module for the logistics transfer with the first line facility; and performing the logistics transfer by the OHT unit between the first line facility and the second line facility, wherein the OHT unit is operated in an auto routing method under the control of the main control unit for logistics transfer in a direct method between the first line facility and the second line facility.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20240021412A1

    公开(公告)日:2024-01-18

    申请号:US18119882

    申请日:2023-03-10

    Abstract: A substrate processing apparatus includes: a processing chamber including a plasma generating region, a gas mixing region, and a substrate processing region; a first gas supply line supplying a first processing gas to the plasma generating region; a second gas supply line supplying a second processing gas to the gas mixing region; an ion blocker disposed between the plasma generating region and the gas mixing region; and a shower head disposed between the gas mixing region and the substrate processing region, wherein the ion blocker has a first blocker flow path unit connected to the second gas supply line and open to the plasma generating region, so that the second processing gas is supplied to the plasma generating region.

    SUBSTRATE PROCESSING MODULE AND LASER BEAM PROVIDING METHOD

    公开(公告)号:US20240006167A1

    公开(公告)日:2024-01-04

    申请号:US18213863

    申请日:2023-06-25

    Abstract: Provided is a substrate processing module including a plurality of substrate processing apparatuses each including a process chamber having a processing space therein, a support unit for supporting a substrate in the processing space, a gas supply unit for supplying a process gas into the processing space, a plasma source for forming plasma from the process gas supplied into the processing space, and a laser unit for heating the substrate by irradiating a laser beam onto the substrate, wherein the substrate processing module further includes a laser beam generator for generating a laser beam, and a laser beam distribution unit for receiving the laser beam from the laser beam generator and distributing the laser beam to the laser units of the plurality of substrate processing apparatuses at time intervals.

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