公开(公告)号：US20160032489A1

公开(公告)日：2016-02-04

申请号：US14717919

申请日：2015-05-20

Applicant: ASM International N.V.

Inventor： Tom E. Blomberg

IPC: C30B29/32 ,  C30B29/24 ,  C30B25/18 ,  H01L21/02 ,  C30B1/04

CPC classification number: C30B29/32 ,  C30B1/02 ,  C30B1/04 ,  C30B25/18 ,  C30B25/186 ,  C30B29/24 ,  C30B29/68 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02318 ,  Y10T428/31678

Abstract: Methods of forming a crystalline strontium titanate layer may include providing a substrate with a crystal enhancement surface (e.g., Pt), depositing strontium titanate by atomic layer deposition, and conducting a post-deposition anneal to crystallize the strontium titanate. Large single crystal domains may be formed, laterally extending greater distances than the thickness of the strontium titanate and demonstrating greater ordering than the underlying crystal enhancement surface provided to initiate ALD. Functional oxides, particularly perovskite complex oxides, can be heteroepitaxially deposited over the crystallized STO.

公开(公告)号：US20160005649A1

公开(公告)日：2016-01-07

申请号：US14737293

申请日：2015-06-11

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768

CPC classification number: H01L21/7685 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76889 ,  H01L23/53238

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20150249005A1

公开(公告)日：2015-09-03

申请号：US14658000

申请日：2015-03-13

Applicant: ASM INTERNATIONAL, N.V.

Inventor： RAIJA H. MATERO ,  LINDA LINDROOS ,  HESSEL SPREY ,  JAN WILLEM MAES ,  DAVID DE ROEST ,  DIETER PIERREUX ,  KEES VAN DER JEUGD ,  LUCIA D'URZO ,  TOM E. BLOMBERG

IPC: H01L21/02 ,  H01L21/22

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

Abstract translation: 通过原子层沉积使用锑反应物和氧源沉积氧化锑薄膜。 锑反应物可以包括卤化锑，如SbCl 3，锑烷基胺和锑醇盐，如Sb（OEt）3。 氧源可以是例如臭氧。 在一些实施方案中，氧化锑薄膜沉积在间歇式反应器中。 氧化锑薄膜可以用作例如蚀刻停止层或牺牲层。

公开(公告)号：US20130263783A1

公开(公告)日：2013-10-10

申请号：US13770815

申请日：2013-02-19

Applicant: ASM International N.V.

Inventor： Leif R. Keto

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45565 ,  H01J37/3244

Abstract: Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. The reactor according to the present invention includes a reaction chamber, a substrate holder, a showerhead plate, a first reactant source, a remote radical generator, a second reactant source, and an exhaust outlet. The showerhead plate is configured to define a reaction space between the showerhead plate and the substrate holder. The showerhead plate includes a plurality of passages leading into the reaction space. The substrate is disposed within the reaction space. A first non-radical reactant is supplied through the showerhead plate to the reaction space. The remote radical generator produces the radicals of a second reactant supplied from the second reactant source. The radicals are supplied directly to the reaction space without passing through the showerhead plate.

Abstract translation: 公开了用于通过使衬底经历气相反应物的交替重复表面反应而在衬底上生长薄膜的各种反应器。 根据本发明的反应器包括反应室，基板保持器，喷头板，第一反应物源，远程自由基发生器，第二反应物源和排气出口。 喷头板构造成限定喷头板和衬底保持器之间的反应空间。 喷头板包括通向反应空间的多个通道。 衬底设置在反应空间内。 将第一非自由基反应物通过喷头板供应到反应空间。 远程自发发生器产生从第二反应物源提供的第二反应物的自由基。 自由基直接供应到反应空间，而不通过喷头板。

公开(公告)号：US08455293B2

公开(公告)日：2013-06-04

申请号：US13669550

申请日：2012-11-06

Applicant: ASM International N.V.

Inventor： Chris G. M. de Ridder ,  Klaas P. Boonstra ,  Adriaan Garssen ,  Frank Huussen

IPC: H01L21/00

CPC classification number: H01L21/67303 ,  C23C16/45546 ,  C23C16/4587 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/67109 ,  H01L21/67313 ,  H01L21/67757 ,  H01L31/1864 ,  H01L31/1876 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for processing solar cells comprising: providing a vertical furnace to receive an array of mutually spaced circular semiconductor wafers for integrated circuit processing; composing a process chamber loading configuration for solar cell substrates, wherein a size of the solar cell substrates that extends along a first surface to be processed is smaller than a corresponding size of the circular semiconductor wafers, such that multiple arrays of mutually spaced solar cell substrates can be accommodated in the process chamber, loading the solar cell substrates into the process chamber; subjecting the solar cell substrates to a process in the process chamber.

Abstract translation: 一种用于处理太阳能电池的方法，包括：提供垂直炉以接收用于集成电路处理的相互间隔开的圆形半导体晶片阵列; 构成用于太阳能电池基板的处理室装载构造，其中沿着待处理的第一表面延伸的太阳能电池基板的尺寸小于圆形半导体晶片的对应尺寸，使得相互间隔开的太阳能电池基板的多个阵列 可以容纳在处理室中，将太阳能电池基板装载到处理室中; 对太阳能电池基板进行处理室中的处理。

公开(公告)号：US11814400B2

公开(公告)日：2023-11-14

申请号：US17383825

申请日：2021-07-23

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC: C07F11/00 ,  C23C16/30 ,  C23C16/455 ,  H10N70/00 ,  H10N70/20 ,  H01L21/02

CPC classification number: C07F11/005 ,  C23C16/306 ,  C23C16/45553 ,  H10N70/023 ,  H10N70/231 ,  H10N70/826 ,  H10N70/8825 ,  H10N70/8828 ,  H01L21/0256 ,  H01L21/0262 ,  H01L21/02562 ,  Y02P20/582

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se—containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

公开(公告)号：US20230031720A1

公开(公告)日：2023-02-02

申请号：US17653940

申请日：2022-03-08

Applicant: ASM INTERNATIONAL N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/22 ,  H01L21/225 ,  H01L21/324

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US11555242B2

公开(公告)日：2023-01-17

申请号：US16460139

申请日：2019-07-02

Applicant: ASM International N.V.

Inventor： Timo Hatanpaa ,  Jaakko Niinisto ,  Mikko Ritala ,  Markku Leskela ,  Suvi Haukka

IPC: C23C16/40 ,  C23C16/455 ,  C07F7/00 ,  C07F17/00 ,  C01G23/07 ,  C01G25/02 ,  C01G27/02

Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

公开(公告)号：US11121014B2

公开(公告)日：2021-09-14

申请号：US16000353

申请日：2018-06-05

Applicant: ASM International N.V.

Inventor： Chris G. M. de Ridder ,  Theodorus G. M. Oosterlaken ,  Adriaan Garssen

IPC: H01L21/673 ,  H01L21/677

Abstract: A dummy wafer storage cassette for storing dummy wafers. The dummy wafer storage cassette may have more than 30 wafer slots for accommodating dummy wafers. The dummy wafer cassette may have substantially the same outer dimensions as a standardized wafer cassette with 25 wafer slots and a pitch of the wafer slots of the dummy wafer storage cassette may be smaller than a pitch between the wafer slots in the standardized wafer cassette.

公开(公告)号：US10784105B2

公开(公告)日：2020-09-22

申请号：US16702915

申请日：2019-12-04

Applicant: ASM International N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/22 ,  H01L21/225 ,  H01L21/324

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.