公开(公告)号：US20130200424A1

公开(公告)日：2013-08-08

申请号：US13880708

申请日：2011-10-26

Applicant: Sung-Jin An ,  Dong-Gun Lee ,  Seok-Han Kim

Inventor： Sung-Jin An ,  Dong-Gun Lee ,  Seok-Han Kim

IPC: H01L21/36 ,  H01L33/12

CPC classification number: H01L33/02 ,  B82Y40/00 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/38 ,  H01L29/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S977/734

Abstract: According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.

Abstract translation: 根据本发明，一种化合物半导体的制造方法包括：在第一选定基板或第一选定化合物半导体层上形成石墨烯材料层; 在至少所述石墨烯衍生的材料层上形成至少一层的第二化合物半导体层，以及改变所述石墨烯衍生的材料层，以将至少一层的所述第二化合物半导体层分离。

公开(公告)号：US20130161543A1

公开(公告)日：2013-06-27

申请号：US13585978

申请日：2012-08-15

Applicant: Jong-Ju PARK ,  Dong-Gun LEE ,  Seong-Sue KIM ,  Chang-Hoon CHOI

Inventor： Jong-Ju PARK ,  Dong-Gun LEE ,  Seong-Sue KIM ,  Chang-Hoon CHOI

IPC: H01L31/0232 ,  G02B27/44

CPC classification number: G02B5/1876 ,  G02B5/1857

Abstract: A zoneplate includes a first pattern having a first thickness, the first pattern including a first material, and a second pattern adjacent to the first pattern and having a second thickness larger than the first thickness, the second pattern including a second material, incident light incident on the first pattern from the outside passing through the first pattern, and incident light incident on the second pattern from the outside passing through the second pattern.

Abstract translation: 附属区域包括具有第一厚度的第一图案，第一图案包括第一材料和与第一图案相邻的第二图案，并且具有大于第一厚度的第二厚度，第二图案包括第二材料，入射光入射 从外部通过第一图案的第一图案和从通过第二图案的外部入射在第二图案上的入射光。

公开(公告)号：US20120135339A1

公开(公告)日：2012-05-31

申请号：US13302143

申请日：2011-11-22

Applicant: Tae-Geun KIM ,  Dong-Wan Kim ,  Dong-Gun Lee ,  Seong-Sue Kim

Inventor： Tae-Geun KIM ,  Dong-Wan Kim ,  Dong-Gun Lee ,  Seong-Sue Kim

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03F1/38 ,  G03F1/80

Abstract: A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in fluid communication with the first opening.

Abstract translation: 反射性极紫外线掩模包括具有曝光区域和周边区域的掩模基板，所述掩模基板在所述周边区域中包括光散射部分，所述掩模基板的上表面上的反射层，所述反射层具有第一 打开曝光所述光散射部分，以及在所述反射层上具有吸收层图案，所述吸收层图案具有与所述第一开口流体连通的第二开口。

公开(公告)号：US20120008123A1

公开(公告)日：2012-01-12

申请号：US13238748

申请日：2011-09-21

Applicant: Dong-gun LEE ,  Seong-sue KIM

Inventor： Dong-gun LEE ,  Seong-sue KIM

IPC: G03B27/52

CPC classification number: G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/84 ,  G21K2201/061

Abstract: An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.

Abstract translation: 一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光 在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测 来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr;其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA， ＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。

公开(公告)号：US08072679B2

公开(公告)日：2011-12-06

申请号：US12153785

申请日：2008-05-23

Applicant: Dong-wan Kim ,  Dong-gun Lee ,  Sung-min Huh

Inventor： Dong-wan Kim ,  Dong-gun Lee ,  Sung-min Huh

IPC: G02B21/16

CPC classification number: G02B21/16 ,  G02B21/361

Abstract: A microscope includes optics configured to direct beams onto an object including a reflective material, a detector configured to receive a field spectrum formed by beams reflected by the object, and a calculator configured to reconstruct an image of the object from the field spectrum detected by the detector.

Abstract translation: 显微镜包括被配置为将光束引导到包括反射材料的物体上的光学器件，被配置为接收由物体反射的光束形成的场光谱的检测器，以及被配置为从由物体所检测的场光谱重建物体的图像的计算器 探测器。

公开(公告)号：US20090322184A1

公开(公告)日：2009-12-31

申请号：US11992424

申请日：2006-09-21

Applicant: Gregory P Carman ,  Dong Gun Lee

Inventor： Gregory P Carman ,  Dong Gun Lee

IPC: H01L41/113

CPC classification number: H02N2/186 ,  H01L41/1136

Abstract: An energy harvesting apparatus includes an inverse frequency rectifier structured to receive mechanical energy at a first frequency, and a solid state electromechanical transducer coupled to the inverse frequency rectifier t receive a force provided by the inverse frequency rectifier. The force, when provided by the inverse frequency rectifier, causes the solid state transducer to be subjected to a second frequency that is higher than the first frequency to thereby generate electrical power.

Abstract translation: 能量收集装置包括被构造为以第一频率接收机械能的逆频整流器，并且耦合到逆频率整流器t的固态机电换能器接收由逆频整流器提供的力。 当由逆频整流器提供时，该力使固态传感器经受高于第一频率的第二频率，从而产生电力。

公开(公告)号：US20080297891A1

公开(公告)日：2008-12-04

申请号：US12153785

申请日：2008-05-23

Applicant: Dong-wan Kim ,  Dong-gun Lee ,  Sung-min Huh

Inventor： Dong-wan Kim ,  Dong-gun Lee ,  Sung-min Huh

IPC: G02B21/06

CPC classification number: G02B21/16 ,  G02B21/361

Abstract: A microscope includes optics configured to direct beams onto an object including a reflective material, a detector configured to receive a field spectrum formed by beams reflected by the object, and a calculator configured to reconstruct an image of the object from the field spectrum detected by the detector.

Abstract translation: 显微镜包括被配置为将光束引导到包括反射材料的物体上的光学器件，被配置为接收由物体反射的光束形成的场光谱的检测器，以及被配置为从由物体所检测的场光谱重建物体的图像的计算器 探测器。

公开(公告)号：US20070247623A1

公开(公告)日：2007-10-25

申请号：US11723992

申请日：2007-03-23

Applicant: Dong-wan Kim ,  Dong-gun Lee ,  Kyoung-yoon Bang

Inventor： Dong-wan Kim ,  Dong-gun Lee ,  Kyoung-yoon Bang

IPC: G01J4/00

CPC classification number: G01J4/00 ,  G01N21/211 ,  G01N21/8422

Abstract: A polarization measuring device includes a diffraction grating and a detector. The diffraction grating is configured to diffract incident light to observe the polarization state of the light. The detector is configured to receive the light diffracted by the diffraction grating and display the polarization state of the light.

Abstract translation: 偏振测量装置包括衍射光栅和检测器。 衍射光栅被配置为衍射入射光以观察光的偏振状态。 检测器被配置为接收由衍射光栅衍射的光并显示光的偏振状态。

公开(公告)号：US06968038B2

公开(公告)日：2005-11-22

申请号：US10626748

申请日：2003-07-22

Applicant: Chang Hee Nam ,  Dong Gun Lee

Inventor： Chang Hee Nam ,  Dong Gun Lee

IPC: G01B9/02 ,  G01N23/20 ,  G21K1/06 ,  G21K5/02 ,  H01S4/00 ,  H05G1/00 ,  H05G2/00 ,  H01J35/32

CPC classification number: H05G2/003 ,  G01N23/20075 ,  G02F2001/354 ,  H01S4/00

Abstract: Disclosed herein is a point-diffraction interferometer which can inspect a surface quality of an optical system for extreme ultraviolet lithography using a high-order harmonic X-ray source with excellent coherence, and an apparatus and method for generating a high-order harmonic X-ray. The present invention uses a high-order harmonic X-ray beam as a coherence light source, thus remarkably reducing the size of an apparatus for generating a light source to approximately 1/100 of a device using a light source generated in a conventional synchrotron. Further, the present invention simplifies the construction of an interferometer by employing a thin foil in which a pinhole is formed through a drilling technique using high power femtosecond laser, thus increasing the industrial utility of the interferometer.

Abstract translation: 本文公开了一种点衍射干涉仪，其可以使用具有优异相干性的高次谐波X射线源来检查用于极紫外光刻的光学系统的表面质量，以及用于产生高次谐波X射线的装置和方法， 射线。 本发明使用高次谐波X射线束作为相干光源，从而将用于产生光源的装置的尺寸显着地减小到使用常规同步加速器中产生的光源的装置的大约1/100。 此外，本发明通过使用通过使用高功率飞秒激光的钻孔技术形成针孔的薄箔来简化干涉仪的结构，从而增加了干涉仪的工业实用性。

公开(公告)号：US20160202611A1

公开(公告)日：2016-07-14

申请号：US14983851

申请日：2015-12-30

Applicant: Sang-Hyun KIM ,  Dong-Gun LEE ,  Byoung-Hun PARK ,  Byung-Gook KIM ,  Chan-Uk JEON

Inventor： Sang-Hyun KIM ,  Dong-Gun LEE ,  Byoung-Hun PARK ,  Byung-Gook KIM ,  Chan-Uk JEON

IPC: G03F7/38 ,  H01L21/311 ,  H01L21/027

CPC classification number: G03F7/38 ,  G03F1/00 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/266 ,  H01L21/31144 ,  H01L21/76802 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/10888

Abstract: A method of patterning a photoresist layer includes forming a photoresist layer on a substrate, exposing the photoresist layer to light using a first light source so as to induce a chemical change in the photoresist layer, performing a post-exposure bake process on the photoresist layer, the post-exposure bake process including irradiating the photoresist layer with at least two shots of laser light from a second light source such that the photoresist layer is heated to a first temperature, and performing a developing process on the photoresist layer after the post-exposure bake process, the development process selectively removing a portion of the photoresist layer.

Abstract translation: 图案化光致抗蚀剂层的方法包括在基板上形成光致抗蚀剂层，使用第一光源将光致抗蚀剂层曝光以引起光致抗蚀剂层的化学变化，对光致抗蚀剂层进行后曝光烘烤处理 所述曝光后烘烤处理包括用来自第二光源的至少两束激光照射所述光致抗蚀剂层，使得所述光致抗蚀剂层被加热到第一温度，并且在所述后处理之后对所述光致抗蚀剂层进行显影处理， 曝光烘烤处理，显影过程选择性地去除光刻胶层的一部分。