公开(公告)号：US07176488B2

公开(公告)日：2007-02-13

申请号：US10748271

申请日：2003-12-31

Applicant: Do-young Kim ,  Wan-jun Park ,  Young-soo Park ,  June-key Lee ,  Yo-sep Min ,  Jang-yeon Kwon ,  Sun-ae Seo ,  Young-min Choi ,  Soo-doo Chae

Inventor： Do-young Kim ,  Wan-jun Park ,  Young-soo Park ,  June-key Lee ,  Yo-sep Min ,  Jang-yeon Kwon ,  Sun-ae Seo ,  Young-min Choi ,  Soo-doo Chae

IPC: H01L29/04 ,  H01L31/20

CPC classification number: H01L29/78603 ,  G02F1/133305 ,  G02F1/136227 ,  G02F2201/50 ,  H01L23/3192 ,  H01L24/24 ,  H01L24/82 ,  H01L27/1214 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/66757 ,  H01L51/5253 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2251/5338 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.

Abstract translation: 在柔性基板上实现的薄膜半导体器件，使用该薄膜半导体器件的电子器件及其制造方法中，薄膜半导体器件和电子器件包括柔性基板，形成在柔性基板上的半导体芯片 以及密封半导体芯片的保护盖。 通过使用保护盖，可以提高薄膜半导体器件对由于基板弯曲引起的应力的耐久性。

公开(公告)号：US20060270097A1

公开(公告)日：2006-11-30

申请号：US11440249

申请日：2006-05-24

Applicant: Do-young Kim ,  Takashi Noguchi ,  Jang-yeon Kwon ,  Jong-man Kim ,  Ji-sim Jung

Inventor： Do-young Kim ,  Takashi Noguchi ,  Jang-yeon Kwon ,  Jong-man Kim ,  Ji-sim Jung

IPC: H01L21/00

CPC classification number: H01L27/1229 ,  H01L27/1214 ,  H01L27/1274 ,  H01L27/3244 ,  H01L29/04

Abstract: An organic light emitting display includes: a substrate; a plurality of pixels which are arranged in a matrix on the substrate, each pixel having a switching transistor, a driving transistor, and an organic light emission diode (OLED). Silicon channels in the switching transistor have lower carrier mobility than silicon channels in the driving transistor. The low carrier mobility of amorphous silicon in the switching transistor prevents current leakage and the higher carrier mobility of polycrystalline silicon in the driving transistor provides a high driving speed and an extended lifetime.

Abstract translation: 有机发光显示器包括：基板; 在衬底上以矩阵形式布置的多个像素，每个像素具有开关晶体管，驱动晶体管和有机发光二极管（OLED）。 开关晶体管中的硅沟道具有比驱动晶体管中的硅沟道更低的载流子迁移率。 开关晶体管中的非晶硅的低载流子迁移率防止电流泄漏，并且驱动晶体管中的多晶硅的较高的载流子迁移率提供高的驱动速度和延长的寿命。

公开(公告)号：US20060145158A1

公开(公告)日：2006-07-06

申请号：US11322235

申请日：2006-01-03

Applicant: Takashi Noguchi ,  Huaxiang Yin ,  Ji-sim Jung ,  Wenxu Xianyu ,  Jang-yeon Kwon ,  Yong-han Roh ,  Suk-won Jeong ,  Seong-hoon Jeong

Inventor： Takashi Noguchi ,  Huaxiang Yin ,  Ji-sim Jung ,  Wenxu Xianyu ,  Jang-yeon Kwon ,  Yong-han Roh ,  Suk-won Jeong ,  Seong-hoon Jeong

IPC: H01L29/76

CPC classification number: H01L29/66757 ,  H01L29/4908

Abstract: Provided is a silicon thin film transistor (TFT) including: a substrate; a silicon channel layer formed on the substrate with a source and a drain on both sides thereof; a gate insulating layer formed on the silicon channel layer; and a gate formed on the gate insulating layer, wherein the gate insulating layer has a structure including an HfOx film. The TFT has a low leakage current.

Abstract translation: 提供一种硅薄膜晶体管（TFT），包括：基板; 形成在所述基板上的硅沟道层，其两侧具有源极和漏极; 形成在硅沟道层上的栅极绝缘层; 以及形成在所述栅极绝缘层上的栅极，其中所述栅极绝缘层具有包括HfO x膜的结构。 TFT具有低漏电流。

公开(公告)号：US20060008957A1

公开(公告)日：2006-01-12

申请号：US11003326

申请日：2004-12-06

Applicant: Jang-yeon Kwon ,  Min-koo Han ,  Se-young Cho ,  Kyung-bae Park ,  Do-young Kim ,  Min-cheol Lee ,  Sang-myeon Han ,  Takashi Noguchi ,  Young-soo Park ,  Ji-sim Jung

Inventor： Jang-yeon Kwon ,  Min-koo Han ,  Se-young Cho ,  Kyung-bae Park ,  Do-young Kim ,  Min-cheol Lee ,  Sang-myeon Han ,  Takashi Noguchi ,  Young-soo Park ,  Ji-sim Jung

IPC: H01L21/205

CPC classification number: H01L21/02532 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02354 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/31608 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

Abstract: A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 Å or more. An interface trap density of the SiO2 can be as high as 1011/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.

Abstract translation: 提供一种制造多晶硅薄膜的方法和使用其制造多晶硅TFT的方法。 使用ICP-CVD在低温下形成多晶硅薄膜。 在ICP-CVD之后，在通过预定步骤增加能量的同时执行ELA。 使用ICP-CVD在约150℃的温度下沉积多晶硅有源层和SiO 2/2栅极绝缘层。 多晶硅的大晶粒尺寸约为3000或更大。 SiO 2 2的界面陷阱密度可以高达10-11 / cm 2。 具有良好电特性的晶体管可以在低温下制造，因此可以形成在耐热塑料基板上。

公开(公告)号：US20050153476A1

公开(公告)日：2005-07-14

申请号：US11033539

申请日：2005-01-12

Applicant: Kyung-bae Park ,  Takashi Noguchi ,  Do-young Kim ,  Jang-yeon Kwon

Inventor： Kyung-bae Park ,  Takashi Noguchi ,  Do-young Kim ,  Jang-yeon Kwon

IPC: H05B33/02 ,  G09F9/30 ,  H01L21/00 ,  H01L21/8242 ,  H01L27/32 ,  H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  H05B33/10 ,  H05B33/14 ,  H05B33/22

CPC classification number: H01L51/0097 ,  H01L27/3244 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: Provided is a flexible display including a plastic substrate and a protective layer formed on the plastic substrate. Accordingly, the plastic substrate is protected from a thermal damage due to a thermal treatment, and sufficient thermal treatment for forming a polysilicon layer can be performed. Also, a polysilicon layer having a good surface and excellent prosperities can be formed due to reflection or absorption of a laser light by the protective layer. Consequently, the performance and durability of the flexible display are greatly improved.

Abstract translation: 提供了一种柔性显示器，其包括塑料基板和形成在塑料基板上的保护层。 因此，可以防止塑料基板由于热处理而导致热损伤，并且可以进行足够的用于形成多晶硅层的热处理。 此外，由于保护层的激光的反射或吸收，可以形成具有良好表面和极好繁荣度的多晶硅层。 因此，柔性显示器的性能和耐用性大大提高。

公开(公告)号：US08866136B2

公开(公告)日：2014-10-21

申请号：US12805379

申请日：2010-07-28

Applicant: Ji-sim Jung ,  Chang-seung Lee ,  Jae-cheol Lee ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kwang-hee Lee ,  Kyoung-seok Son

Inventor： Ji-sim Jung ,  Chang-seung Lee ,  Jae-cheol Lee ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kwang-hee Lee ,  Kyoung-seok Son

IPC: H01L29/10 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78606

Abstract: Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.

Abstract translation: 提供晶体管，晶体管的制造方法和包括该晶体管的电子器件。 晶体管可以包括沟道层上的钝化层，源极，漏极和栅极，其中钝化层的成分在高度方向上变化。 钝化层可以具有依次层叠的包括氧化硅层，氮氧化硅层和氮化硅层的多层结构。 沟道层可以包括氧化物半导体。

公开(公告)号：US08378342B2

公开(公告)日：2013-02-19

申请号：US12659837

申请日：2010-03-23

Applicant: Tae-sang Kim ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son ,  Ji-sim Jung ,  Kwang-hee Lee

Inventor： Tae-sang Kim ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son ,  Ji-sim Jung ,  Kwang-hee Lee

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.

Abstract translation: 提供了包括氧化物半导体的氧化物半导体和氧化物薄膜晶体管。 氧化物半导体可以由其中含有铪（Hf）的铟（In） - 锌（Zn）氧化物形成，其中以预定或给定的组成比包含In，Zn和Hf。

公开(公告)号：US20120295407A1

公开(公告)日：2012-11-22

申请号：US13564082

申请日：2012-08-01

Applicant: Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

Inventor： Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC: H01L21/336

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US08124979B2

公开(公告)日：2012-02-28

申请号：US12032007

申请日：2008-02-15

Applicant: Ji-sim Jung ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Min-koo Han ,  Sang-yoon Lee ,  Joong-hyun Park ,  Sang-myeon Han ,  Sun-jae Kim

Inventor： Ji-sim Jung ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Min-koo Han ,  Sang-yoon Lee ,  Joong-hyun Park ,  Sang-myeon Han ,  Sun-jae Kim

IPC: H01L27/14

CPC classification number: H01L29/78621 ,  H01L29/42384 ,  H01L2029/7863

Abstract: Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

Abstract translation: 提供一种薄膜晶体管及其制造方法。 薄膜晶体管包括：下部结构; 半导体层，形成在所述下部结构上并且包括多个掺杂区域; 形成在所述半导体层上并分离的第一绝缘层和第二绝缘层; 形成在所述第一绝缘层和所述第二绝缘层上的第三绝缘层; 以及在第三绝缘层的分别对应于第一绝缘层和第二绝缘层的区域之间形成的栅极电极层。

公开(公告)号：US20110159646A1

公开(公告)日：2011-06-30

申请号：US13064080

申请日：2011-03-04

Applicant: Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L21/84

CPC classification number: H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/7869

Abstract: A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.

Abstract translation: TFT包括具有多个半导体层的基于氧化锌（ZnO）的沟道层。 多个半导体层的最上部的Zn浓度比下半导体层的Zn浓度低，以抑制由于等离子体引起的氧空位。 沟道层的最上半导体层还具有对等离子体具有相对稳定的结合能的锡（Sn）氧化物，氯化物，氟化物等。 最高的半导体层相对于等离子体冲击相对较强，当暴露于等离子体时分解较少，从而抑制载流子浓度的增加。