公开(公告)号：US07250649B2

公开(公告)日：2007-07-31

申请号：US11120184

申请日：2005-05-03

申请人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

发明人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

IPC分类号： H01L29/76

CPC分类号： H01L28/91 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.

摘要翻译： 存储器件的电容器及其制造方法包括电耦合到晶体管结构的掺杂区域的下电极，下电极具有金属电极和金属氧化物电极，铁电层覆盖并横向延伸 沿着下电极和形成在铁电层上的上电极。

公开(公告)号：US20060289921A1

公开(公告)日：2006-12-28

申请号：US11514248

申请日：2006-09-01

申请人： Jung-hyun Lee ,  Yo-sep Min ,  Young-jin Cho

发明人： Jung-hyun Lee ,  Yo-sep Min ,  Young-jin Cho

IPC分类号： H01L29/94

CPC分类号： H01L28/56 ,  H01L21/02186 ,  H01L21/02197 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/3141 ,  H01L21/321 ,  H01L27/0629 ,  H01L28/55 ,  H01L28/65

摘要： A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In the capacitor of the present invention, oxidization of the lower electrode may be suppressed, and excellent characteristics of the thin dielectric layer may be maintained.

摘要翻译： 一种用于半导体器件的电容器，制造该电容器的方法以及采用该电容器的电子器件，其中该电容器包括由铂族金属形成的上下电极; 设置在上电极和下电极之间的薄介电层; 以及设置在下电极和薄电介质层之间的缓冲层，缓冲层包括第3,4或13族的金属氧化物。在本发明的电容器中，可以抑制下电极的氧化，优异的 可以保持薄介电层的特性。

公开(公告)号：US20060208294A1

公开(公告)日：2006-09-21

申请号：US11438211

申请日：2006-05-23

申请人： Sang-jin Park ,  Tae-wan Kim ,  Jung-hyun Lee ,  Wan-jun Park ,  I-hun Song

发明人： Sang-jin Park ,  Tae-wan Kim ,  Jung-hyun Lee ,  Wan-jun Park ,  I-hun Song

IPC分类号： H01L31/062

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F41/307 ,  H01L27/228

摘要： In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.

摘要翻译： 在单元中具有晶体管和磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）中，MTJ层包括下磁层，防氧化层，隧道氧化物层和上磁层 ，顺序堆叠。 隧道氧化物层可以使用原子层沉积（ALD）方法形成。 至少防氧化层可以使用除ALD法以外的方法形成。

公开(公告)号：US20050194622A1

公开(公告)日：2005-09-08

申请号：US11013923

申请日：2004-12-17

申请人： Jung-hyun Lee ,  Sung-ho Park ,  Myoung-jae Lee ,  Young-soo Park

发明人： Jung-hyun Lee ,  Sung-ho Park ,  Myoung-jae Lee ,  Young-soo Park

IPC分类号： H01L27/10 ,  G11C16/02 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115 ,  H01L27/22 ,  H01L29/92 ,  H01L45/00 ,  H01L49/02 ,  H01L21/20 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： B82Y10/00 ,  G11C13/0004 ,  H01L27/10852 ,  H01L27/112 ,  H01L27/115 ,  H01L27/2436 ,  H01L28/40 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： In a capacitor of a semiconductor device, a semiconductor memory device including the capacitor, and a method of operating the semiconductor memory device, the capacitor includes a lower electrode, a dielectric layer stacked on the lower electrode, the dielectric layer including a phase-transition layer capable of exhibiting two different resistance characteristics depending on whether an insulating property thereof has been changed, and an upper electrode stacked on the dielectric layer.

摘要翻译： 在半导体器件的电容器中，包括电容器的半导体存储器件以及半导体存储器件的操作方法，电容器包括下电极，堆叠在下电极上的电介质层，电介质层包括相转变 层，其能够根据其绝缘性是否变化而呈现出两种不同的电阻特性，以及堆叠在电介质层上的上电极。

公开(公告)号：US20050145916A1

公开(公告)日：2005-07-07

申请号：US11011479

申请日：2004-12-15

申请人： Sung-ho Park ,  Jung-hyun Lee

发明人： Sung-ho Park ,  Jung-hyun Lee

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/316 ,  H01L21/82 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L28/65 ,  H01L21/31604 ,  H01L21/31637 ,  H01L27/1085 ,  H01L28/75

摘要： A capacitor of a semiconductor device, and a method of manufacturing the capacitor of the semiconductor device, include a lower electrode layer, a dielectric layer, and an upper electrode layer, wherein the dielectric layer includes tantalum (Ta) oxide and an oxide of a Group 5 element, such as niobium (Nb) or vanadium (V).

摘要翻译： 半导体器件的电容器和制造半导体器件的电容器的方法包括下电极层，电介质层和上电极层，其中电介质层包括氧化钽（Ta）和氧化物 第5族元素，如铌（Nb）或钒（V）。

公开(公告)号：US20050128916A1

公开(公告)日：2005-06-16

申请号：US10985014

申请日：2004-11-10

申请人： Hyun-soo Park ,  Jae-wook Lee ,  Jae-seong Shim ,  Jung-hyun Lee ,  Eing-seob Cho ,  Eun-jin Ryu

发明人： Hyun-soo Park ,  Jae-wook Lee ,  Jae-seong Shim ,  Jung-hyun Lee ,  Eing-seob Cho ,  Eun-jin Ryu

IPC分类号： G11B5/09 ,  G11B7/09 ,  G11B7/095 ,  G11B19/04 ,  G11B20/10 ,  H04B17/00

CPC分类号： G11B19/04 ,  G11B7/0901 ,  G11B7/0908 ,  G11B7/0941 ,  G11B7/0945 ,  G11B7/0956 ,  G11B20/10009 ,  G11B20/10046 ,  G11B20/10296

摘要： A recording and/or reproducing apparatus and method with signal quality determining device and a method thereof, with the signal quality determining device including a signal estimator determining a level corresponding to a sample value of the RF signal using binary data obtained from the RF signal and generating a selection signal corresponding to the determined level, a channel identifier classifying the sample value into a plurality of levels according to the selection signal and obtaining an average value of the sample values classified into each level, and a quality calculator outputting a signal quality value representing quality of the RF signal using each sample value output from the channel identifier and the average value of the sample values classified into each level. Accordingly, quality of an RF signal can be determined more exactly, and focus compensation, tilt compensation, detrack compensation, and recording signal optimization can be performed using the determined signal quality.

摘要翻译： 一种具有信号质量确定装置的记录和/或再现装置和方法及其方法，其中信号质量确定装置包括使用从RF信号获得的二进制数据确定与RF信号的样本值相对应的电平的信号估计器，以及 产生与所确定的电平相对应的选择信号，根据选择信号将采样值分类为多个电平的信道标识符，并获得分类为每个电平的采样值的平均值;以及质量计算器，输出信号质量值 使用从信道标识符输出的每个样本值和分类到每个级别的样本值的平均值来表示RF信号的质量。 因此，可以更准确地确定RF信号的质量，并且可以使用确定的信号质量来执行聚焦补偿，倾斜补偿，去差补偿和记录信号优化。

公开(公告)号：US20050087789A1

公开(公告)日：2005-04-28

申请号：US10902824

申请日：2004-08-02

申请人： Hion-suck Baik ,  Jung-hyun Lee ,  Jong-bong Park ,  Yun-chang Park

发明人： Hion-suck Baik ,  Jung-hyun Lee ,  Jong-bong Park ,  Yun-chang Park

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8242 ,  H01L21/44

CPC分类号： H01L28/75 ,  H01L21/28556 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/55 ,  H01L28/65 ,  H01L28/90 ,  H01L28/91

摘要： A semiconductor device with a stack type capacitor having a lower electrode formed of an aluminum-doped metal, and a manufacturing method thereof are provided. The semiconductor device includes: a semiconductor substrate having a gate structure and an active region; an interlayer dielectric film formed on the active region; a lower electrode formed of a metal containing aluminum on the interlayer dielectric film; a dielectric layer formed on the lower electrode; an upper electrode formed on the dielectric layer; and a plug formed in the interlayer dielectric film to electrically connect the active region with the lower electrode. The method includes: forming a gate structure and an active region on a semiconductor substrate; forming an interlayer dielectric film on the resultant semiconductor substrate; forming a plug in the interlayer dielectric film to electrically connect with the active region; forming a mold oxidation layer on the plug and the interlayer dielectric film; patterning the mold oxidation layer with a predetermined pattern and forming a lower electrode of material containing aluminum on the plug; and sequentially forming a dielectric layer and an upper electrode on the lower electrode.

摘要翻译： 提供具有由铝掺杂金属形成的下电极的堆叠型电容器的半导体器件及其制造方法。 半导体器件包括：具有栅极结构和有源区的半导体衬底; 形成在有源区上的层间绝缘膜; 在层间电介质膜上由含有铝的金属形成的下电极; 形成在下电极上的电介质层; 形成在电介质层上的上电极; 以及形成在所述层间电介质膜中以将所述有源区电连接到所述下电极的插塞。 该方法包括：在半导体衬底上形成栅极结构和有源区; 在所得半导体衬底上形成层间绝缘膜; 在所述层间电介质膜中形成插塞以与所述有源区电连接; 在插塞和层间电介质膜上形成模具氧化层; 以预定图案图案化模具氧化层，并在插头上形成含有铝的材料的下电极; 并且在下电极上依次形成电介质层和上电极。

公开(公告)号：US06775459B2

公开(公告)日：2004-08-10

申请号：US10193004

申请日：2002-07-10

申请人： Yoon Shik Hong ,  Yong San Shin ,  Young Yun Kim ,  Jong Hyun Lee ,  Sung Cheon Jung ,  Jung Hyun Lee

发明人： Yoon Shik Hong ,  Yong San Shin ,  Young Yun Kim ,  Jong Hyun Lee ,  Sung Cheon Jung ,  Jung Hyun Lee

IPC分类号： G02B600

CPC分类号： G02B6/353 ,  G02B6/266 ,  G02B6/3528 ,  G02B6/3552 ,  G02B6/3584 ,  G02B6/3594

摘要： Disclosed is a variable optical attenuator comprising: a transmitting fiber for transmitting light; a receiving fiber concentrically placed with said transmitting fiber for absorbing light; a shutter between said transmitting fiber and said receiving fiber for absorbing light to adjust optical transmittance; and an actuator for driving said shutter. The size and price of the optical attenuator is remarkably reduced compared to a conventional mechanical connector-type attenuator to provide an article excellent in competitive edge.

摘要翻译： 公开了一种可变光衰减器，包括：用于发射光的发射光纤; 与所述发射光纤同心放置的用于吸收光的接收光纤; 在所述发射光纤和所述接收光纤之间的快门用于吸收光以调节光透射率; 以及用于驱动所述活门的致动器。 与传统的机械连接器型衰减器相比，光衰减器的尺寸和价格显着降低，以提供优异的竞争优势的制品。

公开(公告)号：US06506504B1

公开(公告)日：2003-01-14

申请号：US09351163

申请日：1999-07-12

申请人： Soon-ki Kwon ,  Yun-hi Kim ,  Dong-cheol Shin ,  Jun-hwan Ahn ,  Han-sung Yu ,  Jung-hyun Lee

发明人： Soon-ki Kwon ,  Yun-hi Kim ,  Dong-cheol Shin ,  Jun-hwan Ahn ,  Han-sung Yu ,  Jung-hyun Lee

IPC分类号： H05B3314

CPC分类号： H01L51/0043 ,  C09K11/06 ,  H01L51/0035 ,  H01L51/004 ,  H01L51/0052 ,  H01L51/0094 ,  H01L51/5012 ,  Y10S428/917 ,  Y10T428/31663

摘要： A light-emitting compound and a display device adopting the light-emitting compounds as a color-developing substance. When the display device adopts an organic layer formed of the light-emitting compound, such as a light-emitting layer or an electron transport layer, as a blue light-emitting material, it can display blue and has good luminous efficiency and driving voltage characteristics.

摘要翻译： 发光性化合物和采用发光性化合物作为显色性物质的显示装置。 当显示装置采用由诸如发光层或电子传输层的发光化合物形成的有机层作为蓝色发光材料时，其可以显示蓝色并且具有良好的发光效率和驱动电压特性 。

公开(公告)号：US06334480B1

公开(公告)日：2002-01-01

申请号：US09702859

申请日：2000-11-01

申请人： Geunbae Lim ,  Hayong Yun ,  Jung Hyun Lee ,  Yukeun Eugene Pak ,  Jung-sang Ko ,  Sung-jin Kim

发明人： Geunbae Lim ,  Hayong Yun ,  Jung Hyun Lee ,  Yukeun Eugene Pak ,  Jung-sang Ko ,  Sung-jin Kim

IPC分类号： F28F700

CPC分类号： H01L23/467 ,  F28F13/02 ,  F28F13/18 ,  F28F13/185 ,  H01L2924/0002 ,  Y10T29/4935 ,  H01L2924/00

摘要： A cooling device with micro cooling fins is provided. The cooling device includes a substrate, a plurality of vibrating type cooling fins extending from the substrate, and a blast fan for ventilating the substrate to cool the substrate and the vibrating type cooling fins and for causing the vibrating type cooling fins to vibrate. Accordingly, micro cooling fins formed on the surface of a substrate change the flowing path of the air and improve the performance of heat transfer near the surface of the substrate due to their vibration. In other words, the resistance to heat transfer is decreased and the performance of heat transfer is improved by disturbing the formation of a heat boundary layer, which is formed on a smooth surface. Since the cooling device provides improved heat transfer performance compared to an existing cooling device, an area and volume for heat transfer can be decreased so that the cooling device can be miniaturized.