公开(公告)号：US20110269315A1

公开(公告)日：2011-11-03

申请号：US13095503

申请日：2011-04-27

Applicant: Kazuhide Hasebe ,  Akinobu Kakimoto

Inventor： Kazuhide Hasebe ,  Akinobu Kakimoto

IPC: H01L21/18 ,  C23C16/52 ,  C23C16/46 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01L21/02636 ,  C23C16/22 ,  C23C16/24 ,  C23C16/45525 ,  C23C16/481 ,  H01L21/02425 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262

Abstract: A thin film formation method to form a silicon film containing an impurity on a surface of an object to be processed in a process chamber that allows vacuum exhaust includes alternately and repeatedly performing a first gas supply process in which a silane-based gas composed of silicon and hydrogen is supplied into the process chamber in a state that the silane-based gas is adsorbed onto the surface of the object to be processed and a second gas supply process in which an impurity-containing gas is supplied into the process chamber, to form an amorphous silicon film containing an impurity. Accordingly, an amorphous silicon film containing an impurity having good filling characteristics can be formed even at a relatively low temperature.

Abstract translation: 在允许真空排气的处理室中形成在待处理物体的表面上含有杂质的硅膜的薄膜形成方法包括交替地和反复地进行第一气体供给处理，其中由硅构成的硅烷系气体 并且将氢气以硅烷类气体吸附在待处理物体的表面上的状态供给至处理室，第二气体供给工序将含有杂质的气体供给至处理室，形成 含有杂质的非晶硅膜。 因此，即使在相对较低的温度下也可以形成含有具有良好填充特性的杂质的非晶硅膜。

公开(公告)号：US20110237082A1

公开(公告)日：2011-09-29

申请号：US13154728

申请日：2011-06-07

Applicant: Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

Inventor： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

IPC: H01L21/311

CPC classification number: G03F7/405 ,  G03F7/0035 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

Abstract: There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.

Abstract translation: 提供了一种微图案形成方法，包括在基板上形成薄膜; 在加工薄膜时形成用作掩模的膜; 将作为掩模的胶片处理成包括具有预设间距的线的图案; 修剪包括线条的图案; 并且通过交替地供给源气体和活性氧物质，在包括线条的图案和薄膜上形成氧化膜。 这里，在构成为形成氧化膜的成膜装置中连续进行修整图案的修整和形成氧化膜的工序。

公开(公告)号：US08021987B2

公开(公告)日：2011-09-20

申请号：US12632131

申请日：2009-12-07

Applicant: Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

Inventor： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC: H01L21/38 ,  H01L21/469

CPC classification number: H01L21/02112 ,  H01L21/0234 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L29/518 ,  H01L29/78

Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

Abstract translation: 通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。 通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

公开(公告)号：US07754622B2

公开(公告)日：2010-07-13

申请号：US12441741

申请日：2008-06-06

Applicant: Pao-Hwa Chou ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Yasushi Akasaka ,  Mitsuaki Iwashita ,  Reiji Niino

Inventor： Pao-Hwa Chou ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Yasushi Akasaka ,  Mitsuaki Iwashita ,  Reiji Niino

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/3088 ,  H01L21/32139 ,  H01L29/66795

Abstract: Disclosed is a patterning method including: forming, on a thin film, a sacrificial film made of a material different from that of the thin film and made of SiBN; processing the sacrificial film into a pattern having a preset interval by using a photolithography technique; forming, on sidewalls of the processed sacrificial film, sidewall spacers made of a material different from those of the sacrificial film and the thin film; removing the processed sacrificial film; and processing the thin film by using the sidewall spacers as a mask.

Abstract translation: 公开了一种图案化方法，包括：在薄膜上形成由与SiBN不同的材料制成的牺牲膜; 通过使用光刻技术将牺牲膜处理成具有预设间隔的图案; 在加工的牺牲膜的侧壁上形成由与牺牲膜和薄膜不同的材料制成的侧壁间隔物; 去除加工的牺牲膜; 以及通过使用侧壁间隔件作为掩模来处理薄膜。

公开(公告)号：US07713354B2

公开(公告)日：2010-05-11

申请号：US12213574

申请日：2008-06-20

Applicant: Kazuhide Hasebe ,  Mitsuhiro Okada

Inventor： Kazuhide Hasebe ,  Mitsuhiro Okada

IPC: C23C16/52 ,  C23C16/00

CPC classification number: C23C16/52 ,  C23C16/4408

Abstract: After silicon nitride films have been formed on wafers by a film forming process in a reaction vessel, the reaction vessel is processed by a purging process specified by a purging recipe and compatible with the film forming process to suppress production of gases and particles by removing surface parts of films deposited on the inside surface of the reaction vessel and causative of production of gases and particles.A wafer boat 25 holding a plurality of wafers W is loaded into a reaction vessel 2, and the wafers W are processed by a film forming process specified by a film forming recipe 1 specifying, for example, Si2Cl2 gas and NH3 gas as film forming gases. Subsequently, a purging recipe 1 specifying a purging process compatible to the film forming process is selected automatically, and the reaction vessel 2 is processed by the purging process specified by the purging recipe 1. A purging recipe is selected automatically from a plurality of purging recipes specifying purging processes respectively compatible with film forming processes. Unnecessary extension of purging time is suppressed and the reaction vessel 2 can be processed by an appropriate purging process compatible with the film forming process.

Abstract translation: 氮化硅膜通过成膜工艺在反应容器中形成在氮化硅膜上之后，通过清洗配方指定的清洗方法处理反应容器，与成膜工艺相容，通过除去表面来抑制气体和颗粒的产生 沉积在反应容器内表面上的部分薄膜，并导致气体和颗粒的产生。 将保持多个晶片W的晶片舟皿25装载到反应容器2中，并且通过成膜方法1所规定的成膜方法处理晶片W，该成膜配方1规定例如作为成膜气体的Si 2 Cl 2气体和NH 3气体 。 随后，自动选择指定与成膜过程相容的清洗处理的清洗配方1，并通过清洗配方1规定的清洗处理来处理反应容器2.从多个清洗配方中自动选择清洗配方 指定分别与成膜工艺相容的清洗工艺。 清洗时间的不必要的延长被抑制，反应容器2可以通过与成膜过程相容的适当清洗过程进行处理。

公开(公告)号：US07611995B2

公开(公告)日：2009-11-03

申请号：US10552262

申请日：2004-04-20

Applicant: Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

Inventor： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

IPC: H01L21/302

CPC classification number: H01L21/31116

Abstract: A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vessel 18 that can be evacuated uses a mixed gas containing HF gas and NH3 gas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NH3 gas.

Abstract translation: 二氧化硅膜去除方法能够在比室温高的温度下除去二氧化硅膜，例如天然氧化物膜或化学氧化物膜。 在可以抽真空的处理容器18中去除在工件上形成的二氧化硅膜的二氧化硅膜去除方法使用含有HF气体和NH 3气体的混合气体来除去二氧化硅膜。 通过使用含有HF气体和NH 3气体的混合气体，能够有效地从工件表面除去二氧化硅膜。

公开(公告)号：US20090181550A1

公开(公告)日：2009-07-16

申请号：US12318702

申请日：2009-01-06

Applicant: Kazuhide Hasebe ,  Nobutake Nodera ,  Eun-jo Lee

Inventor： Kazuhide Hasebe ,  Nobutake Nodera ,  Eun-jo Lee

IPC: H01L21/314 ,  B05C11/00

CPC classification number: C23C16/345 ,  C23C16/45527 ,  C23C16/4554 ,  C23C16/45546 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: A film formation process is performed to form a silicon nitride film on a target substrate within a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. The method is preset to compose the film formation process of a main stage with an auxiliary stage set at one or both of beginning and ending of the film formation process. The main stage includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism. The auxiliary stage includes no excitation period of supplying the second process gas to the process field while exciting the second process gas by the exciting mechanism.

Abstract translation: 执行成膜工艺以在被选择性地供给含有硅烷族气体的第一工艺气体和含有氮化气体的第二工艺气体的工艺区域内的目标衬底上形成氮化硅膜。 该方法被预设为构成主阶段的成膜过程，其中辅助级设置在成膜过程的开始和结束的一个或两个。 主阶段包括通过激励机构激励第二处理气体的第二处理气体向工艺场供给的激发期。 辅助级不包括通过激励机构激励第二工艺气体的第二工艺气体供给工艺场的激发周期。

公开(公告)号：US20090114156A1

公开(公告)日：2009-05-07

申请号：US12285512

申请日：2008-10-07

Applicant: Nobutake Nodera ,  Jun Sato ,  Kazuya Yamamoto ,  Kazuhide Hasebe

Inventor： Nobutake Nodera ,  Jun Sato ,  Kazuya Yamamoto ,  Kazuhide Hasebe

IPC: C23C16/00

CPC classification number: C23C16/4405 ,  C23C16/345 ,  C23C16/45525 ,  H01L21/3185

Abstract: A film formation apparatus for a semiconductor process includes a support member having a plurality of support levels configured to support target substrates inside a reaction chamber; a film formation gas supply system configured to supply a film formation gas into the reaction chamber and including a gas distribution nozzle; a cleaning gas supply system configured to supply a cleaning gas for etching a by-product film deposited inside the reaction chamber; and an exhaust system configured to exhaust gas from inside the reaction chamber. The cleaning gas supply system includes a gas nozzle disposed near a bottom of the reaction chamber and having a gas supply port at its top directed upward, and the gas supply port is located below the lowermost one of the support levels of the support member.

Abstract translation: 一种用于半导体工艺的成膜装置包括：支撑构件，其具有多个支撑层，构造成支撑反应室内的目标基板; 成膜气体供给系统，其构造成将成膜气体供给到所述反应室中并且包括气体分配喷嘴; 清洁气体供给系统，被配置为提供用于蚀刻沉积在所述反应室内的副产物膜的清洁气体; 以及构造成从反应室内排出气体的排气系统。 清洁气体供给系统包括设置在反应室底部附近的气体喷嘴，其顶部朝向上方具有气体供给口，气体供给口位于支撑构件的支撑水平面的最下方。

公开(公告)号：US20080311760A1

公开(公告)日：2008-12-18

申请号：US12155678

申请日：2008-06-06

Applicant: Nobutake Nodera ,  Masanobu Matsunaga ,  Kazuhide Hasebe ,  Kota Umezawa ,  Pao-Hwa Chou

Inventor： Nobutake Nodera ,  Masanobu Matsunaga ,  Kazuhide Hasebe ,  Kota Umezawa ,  Pao-Hwa Chou

IPC: H01L21/31 ,  B05C11/10

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45546 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185

Abstract: A silicon nitride film is formed on a target substrate by performing a plurality of cycles in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. Each of the cycles includes a first supply step of performing supply of the first process gas while maintaining a shut-off state of supply of the second process gas, and a second supply step of performing supply of the second process gas, while maintaining a shut-off state of supply of the first process gas. The method is arranged to repeat a first cycle set with the second supply step including an excitation period of exciting the second process gas and a second cycle set with the second supply step including no period of exciting the second process gas.

Abstract translation: 在被配置为选择性地供给包含硅烷族气体的第一工艺气体和含有氮化气体的第二工艺气体的工艺过程中进行多个循环，在目标衬底上形成氮化硅膜。 每个循环包括在保持第二处理气体的供给关闭状态的同时进行第一处理气体的供给的第一供给步骤和在保持关闭的同时进行第二处理气体的供给的第二供给步骤 - 第一工艺气体的供给状态。 该方法被布置为重复第一循环集合，其中第二供给步骤包括激发第二处理气体的激发周期，以及第二循环，其中第二供给步骤不包括激发第二处理气体的周期。

公开(公告)号：US07462571B2

公开(公告)日：2008-12-09

申请号：US11188736

申请日：2005-07-26

Applicant: Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

Inventor： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

IPC: H01L21/31

CPC classification number: C23C16/45531 ,  C23C16/30 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/507

Abstract: An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.

Abstract translation: 在目标衬底上通过CVD形成杂质掺杂的氮化硅或氧氮化物膜，在选择性地供给含有硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体的工艺领域中， 含有掺杂气体的第三工艺气体。 该方法交替地包括第一至第四步骤。 第一步向现场供应第一和第三工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场施加第一和第三处理气体的同时停止向现场供应第二处理气体，并且包括通过激励机构激励第二处理气体的激发周期。 第四步停止向现场供应第一至第三处理气体。