公开(公告)号：US20060195218A1

公开(公告)日：2006-08-31

申请号：US11046903

申请日：2005-02-01

Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel Prager

Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel Prager

IPC: G06F19/00

CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.

Abstract translation: 该方法包括用于蚀刻处理的方法，其允许调整隔离结构/嵌套结构/特征之间的偏置，校正其中隔离结构/特征需要小于嵌套结构/特征的过程，并且其中嵌套结构/特征 需要相对于孤立的结构/特征而减少，同时允许对修剪的关键控制。

公开(公告)号：US20050171627A1

公开(公告)日：2005-08-04

申请号：US10987194

申请日：2004-11-15

Applicant: Merritt Funk ,  Masaki Tozawa

Inventor： Merritt Funk ,  Masaki Tozawa

IPC: H01L21/02 ,  G05B19/4065 ,  G06F19/00 ,  H01L21/00

CPC classification number: H01L21/67276 ,  G05B19/4065 ,  G05B2219/37234 ,  G05B2219/45031 ,  H01L21/67253

Abstract: A method and system for monitoring tool performance for processing tools in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules, a number of sensors, and an alarm management system. A tool health control strategy is executed in which tool health data for the processing tool is collected. A tool health analysis strategy is executed in which the tool health data is analyzed. An intervention manager can pause the processing tool when an alarm has occurred. The intervention manager refrains from pausing the processing tool when an alarm has not occurred.

Abstract translation: 一种用于监测半导体处理系统中的加工工具的工具性能的方法和系统。 半导体处理系统包括多个处理工具，多个处理模块，多个传感器和报警管理系统。 执行工具健康控制策略，其中收集用于处理工具的工具健康数据。 执行工具健康分析策略，在其中分析工具健康数据。 发生报警时，干预管理器可以暂停处理工具。 当没有发生警报时，干预管理员不要暂停处理工具。

公开(公告)号：US20050159911A1

公开(公告)日：2005-07-21

申请号：US11025396

申请日：2004-12-30

Applicant: Merritt Funk ,  Steven Hartmann

Inventor： Merritt Funk ,  Steven Hartmann

IPC: G06F3/048 ,  G05B19/418 ,  G06F3/00 ,  G06F17/50 ,  G06F19/00 ,  H01L21/00 ,  H01L21/02

CPC classification number: G05B19/418 ,  G05B2219/31334 ,  G05B2219/32128 ,  G05B2219/45031 ,  Y02P90/02 ,  Y02P90/16 ,  Y02P90/18 ,  Y02P90/185 ,  Y02P90/86

Abstract: Graphical User Interfaces (GUIs) are presented for configuring and setting-up sensors for monitoring tool and process performance in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules (chambers), and a number of sensors. The graphical display is organized so that all significant parameters are clearly and logically displayed so that the user is able to perform the desired configuration and setup tasks with as little input as possible. The GUI is web-based and is viewable by a user using a web browser.

Abstract translation: 提供图形用户界面（GUI），用于配置和设置传感器，用于在半导体处理系统中监控工具和过程性能。 半导体处理系统包括多个处理工具，多个处理模块（室）和多个传感器。 图形显示被组织，使得所有重要参数都被清楚和逻辑地显示，使得用户能够尽可能少地输入所需的配置和设置任务。 GUI是基于Web的，并且可以由使用web浏览器的用户查看。

公开(公告)号：US08968588B2

公开(公告)日：2015-03-03

申请号：US13436458

申请日：2012-03-30

Applicant: Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

Inventor： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: H01J37/32192 ,  C23C16/511 ,  H01J37/32293 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

Abstract: A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

Abstract translation: 表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源 该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

公开(公告)号：US20130256272A1

公开(公告)日：2013-10-03

申请号：US13436458

申请日：2012-03-30

Applicant: Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

Inventor： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

IPC: H05H1/24 ,  B44C1/22 ,  C23C16/511 ,  C23C16/52

CPC classification number: H01J37/32192 ,  C23C16/511 ,  H01J37/32293 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

Abstract: A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

Abstract translation: 表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源 该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

公开(公告)号：US20130256268A1

公开(公告)日：2013-10-03

申请号：US13436760

申请日：2012-03-30

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: B44C1/22 ,  B05B1/00 ,  B05C11/00 ,  B05C13/00

CPC classification number: H01J37/32834 ,  H01J37/32504 ,  H01J37/32633 ,  H01J37/32935

Abstract: A plasma processing system. The processing system comprises a process chamber having first and second ends arranged such that the first end opposes the second end. A substrate support is positioned at the first end of the process chamber and is configured to support a substrate. An exhaust system is positioned proximate the second end of the process chamber and draws a vacuum on the process chamber. Between the exhaust system and substrate support there is a plurality of super-Debye openings, and between the exhaust system and the plurality of super-Debye openings is a plurality of sub-Debye openings. The super-Debye openings are configured to limit diffusion of plasma while the sub-Debye openings are configured to quench plasma.

Abstract translation: 等离子体处理系统 处理系统包括处理室，该处理室的第一和第二端被布置为使得第一端与第二端相对。 衬底支撑件定位在处理室的第一端处并且被配置为支撑衬底。 排气系统定位在处理室的第二端附近并在处理室上抽真空。 在排气系统和基板支撑件之间存在多个超级德拜开口，并且在排气系统与多个超级德拜开口之间是多个次德开口。 超级德拜开口被配置为限制等离子体的扩散，而副德拜开口被配置为猝灭等离子体。

公开(公告)号：US08486798B1

公开(公告)日：2013-07-16

申请号：US13366340

申请日：2012-02-05

Applicant: Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

Inventor： Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/20 ,  H01L29/93 ,  H01L21/306

CPC classification number: H01J37/32807 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642

Abstract: A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.

Abstract translation: 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可更换腔室元件包括被配置为在等离子体处理系统中暴露于等离子体的室部件，其中腔室部件被制造为包括半导体结，并且其中当跨越半导体施加电压时腔室部件的电容变化 交界处

公开(公告)号：US20130084706A1

公开(公告)日：2013-04-04

申请号：US13249418

申请日：2011-09-30

Applicant: Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

IPC: H01L21/311 ,  H01L21/3065

CPC classification number: H01J37/3222 ,  H01J37/32256 ,  H01J37/32293

Abstract: The invention provides a plurality of Surface Wave Antenna (SWA) plasma sources. The SWA plasma sources can comprise one or more non-circular slot antennas, each having a plurality of plasma-tuning rods extending therethrough. Some of the plasma tuning rods can be configured to couple the electromagnetic (EM) energy from one or more of the non-circular slot antennas to the process space within the process chamber. The invention also provides SWA plasma sources that can comprise a plurality of resonant cavities, each having one or more plasma-tuning rods extending therefrom. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber.

Abstract translation: 本发明提供了多个表面波天线（SWA）等离子体源。 SWA等离子体源可以包括一个或多个非圆形缝隙天线，每个天线具有延伸穿过其中的多个等离子体调谐杆。 一些等离子体调谐杆可以被配置为将来自一个或多个非圆形缝隙天线的电磁（EM）能量耦合到处理室内的处理空间。 本发明还提供了可以包括多个谐振腔的SWA等离子体源，每个谐振腔具有从其延伸的一个或多个等离子体调谐杆。 等离子体调谐杆中的一些可以被配置为将来自一个或多个谐振腔的EM能量耦合到处理室内的处理空间。

公开(公告)号：US08343371B2

公开(公告)日：2013-01-01

申请号：US12688755

申请日：2010-01-15

Applicant: Merritt Funk ,  Lee Chen ,  Radha Sundararajan

Inventor： Merritt Funk ,  Lee Chen ,  Radha Sundararajan

IPC: G01L21/30

CPC classification number: H01J37/3244 ,  H01J37/32009 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/338

Abstract: The invention can provide apparatus and methods of processing a substrate in real-time using a Quasi-Neutral Beam (Q-NB) curing system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).

Abstract translation: 本发明可以提供使用准中性束（Q-NB）固化系统实时处理衬底以提高光致抗蚀剂层的耐蚀刻性的设备和方法。 此外，改进的光致抗蚀剂层可用于更精确地控制栅极和/或间隔物临界尺寸（CD），以控制栅极和/或间隔区CD均匀性，并且消除线边缘粗糙度（LER）和线宽粗糙度（LWR ）。

公开(公告)号：US20120252141A1

公开(公告)日：2012-10-04

申请号：US13073237

申请日：2011-03-28

Applicant: Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

Inventor： Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

IPC: H01L21/66

CPC classification number: H01L22/20 ,  H01J37/32082 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/6708 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.

Abstract translation: 本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个 更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。 多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。