Abstract:
A semiconductor memory apparatus may comprise a duty cycle correction circuit configured to perform a duty correction operation with respect to an input clock signal when a delay locked signal is activated, and perform the duty correction operation with respect to the input signal when a precharge signal is activated, to generate a corrected clock signal.
Abstract:
A semiconductor package having improved EMI and crosstalk characteristics is provided. The semiconductor package includes a semiconductor package including a substrate, at least one first semiconductor chip formed on a top surface of the substrate and electrically connected to the substrate, and at least one second semiconductor chip formed on a top surface of the first semiconductor chip and electrically connected to the first semiconductor chip, wherein first and second conductive layers are formed on the top surfaces of the first semiconductor chip and the second semiconductor chip, respectively, and the first conductive layer and the second conductive layer are connected to a ground portion.
Abstract:
Provided is a semiconductor package including a de-coupling capacitor. The semiconductor package includes a substrate, on an upper surface of which a semiconductor chip is mounted; a plurality of first conductive bumps that are disposed on a lower surface of the substrate and that electrically connect the substrate to an external device; and a de-coupling capacitor that is disposed on the lower surface of the substrate and includes an electrode portion and at least one dielectric layer, wherein the electrode portion of the de-coupling capacitor includes second conductive bumps that electrically connect the substrate to an external device.
Abstract:
An image sensor chip, a camera module, and devices incorporating the image sensor chip and camera module include a light receiving unit on which light is incident, a logic unit provided to surround the light receiving unit, and an electromagnetic wave shielding layer formed on the logic unit and not formed on the light receiving unit.
Abstract:
A semiconductor device includes: an internal clock signal generation unit configured to receive an external clock signal and to generate an internal clock signal in response to a control signal; and a monitoring unit configured to monitor environmental elements reflected in a circuit response to the control signal.
Abstract:
An electronic information system comprises an external storage device and an application processor. The external storage device stores boot code and the application processor is adapted to receive the boot code from the external storage device and to perform a system booting operation during a power-up operation by executing the boot code.
Abstract:
A semiconductor device includes a buffer unit configured to include first and second buffers, connected to each other in a cross-coupled manner, to receive a reference voltage and to buffer an input signal applied to the first and second buffers based on the reference voltage to drive an output terminal with a current-driving capacity; and a drive power adjustor configured to adjust the current-driving capacity depending on a level of a power supply voltage applied to the buffering unit.
Abstract:
Provided is a method of securing a Universal Serial Bus (USE) keyboard. According to the method, a keyboard security operation is performed at a host controller driver level, which is one level lower than a USE hub driver level. Thus, it is possible to rapidly and effectively prevent a malicious program from leaking information input from a keyboard that is in communication with a main frame and transfers data via a USB.
Abstract:
A power-up signal generator of a semiconductor memory apparatus includes a power-up signal generating unit that includes a MOS transistor having a gate receiving a divided voltage of an external supply voltage, the power-up signal generating unit determining a level of a power-up signal according to a turn-ON state of the MOS transistor, and a bulk bias voltage generating unit that applies a bulk bias voltage to a bulk of the MOS transistor to adjust a threshold voltage of the MOS transistor, wherein the bulk bias voltage varies according to a temperature of the semiconductor memory device.
Abstract:
A multilayer insulated wire having two or more extrusion-insulating layers provided on a conductor to coat the conductor, wherein at least one layer of the insulating layers is composed of a polyethersulfone resin (i), or a resin mixture (ii) made by blending: 100 parts by weight of a resin (A) of at least one selected from polyetherimide resins and polyethersulfone resins, and 10 parts by weight or more of a resin (B) of at least one selected from polycarbonate resins, polyarylate resins, polyester resins and polyamide resins; and wherein at least one layer other than the insulating layer composed of the resin (i) or resin mixture (ii) is provided as an outer layer to the insulating layer and is composed of a polyphenylenesulfide resin. A transformer can also have the mentioned multi-layered insulated wire.