Patent search ap:("APPLIED MATERIALS Page INC.") AND inv:"Zihui Li"

41.

发明申请
INTEGRATION PROCESSES UTILIZING BORON-DOPED SILICON MATERIALS 有权

公开(公告)号：US20220020599A1

公开(公告)日：2022-01-20

申请号：US17378720

申请日：2021-07-18

Applicant: Applied Materials, Inc.

Inventor： Takehito Koshizawa , Karthik Janakiraman , Rui Cheng , Krishna Nittala , Menghui Li , Ming-Yuan Chuang , Susumu Shinohara , Juan Guo , Xiawan Yang , Russell Chin Yee Teo , Zihui Li , Chia-Ling Kao , Qu Jin , Anchuan Wang

IPC: H01L21/311 , H01L21/033 , H01J37/32

Abstract: Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.

42.

发明授权
Thermal silicon etch 有权

公开(公告)号：US11004689B2

公开(公告)日：2021-05-11

申请号：US16435910

申请日：2019-06-10

Applicant: Applied Materials, Inc.

Inventor： Zihui Li , Rui Cheng , Anchuan Wang , Nitin K. Ingle , Abhijit Basu Mallick

IPC: H01L21/3065 , H01L21/311 , B81C1/00 , H01L21/3213 , H01J37/00 , H01L27/11582

Abstract: Exemplary methods for selectively removing silicon (e.g. polysilicon) from a patterned substrate may include flowing a fluorine-containing precursor into a substrate processing chamber to form plasma effluents. The plasma effluents may remove silicon (e.g. polysilicon, amorphous silicon or single crystal silicon) at significantly higher etch rates compared to exposed silicon oxide, silicon nitride or other dielectrics on the substrate. The methods rely on the temperature of the substrate in combination with some conductivity of the surface to catalyze the etch reaction rather than relying on a gas phase source of energy such as a plasma.

43.

发明授权
Gas-phase selective etching systems and methods 有权

公开(公告)号：US10573527B2

公开(公告)日：2020-02-25

申请号：US16376508

申请日：2019-04-05

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj , Robert Jan Visser , Nitin Ingle , Zihui Li , Prerna Sonthalia Goradia

IPC: H01L21/3065 , H01L21/311 , H01L21/3213

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing ammonia into the substrate processing region at a temperature above about 200° C. The methods may further include removing an amount of the metal-containing material.

44.

发明申请
GAS-PHASE SELECTIVE ETCHING SYSTEMS AND METHODS 审中-公开

公开(公告)号：US20190311909A1

公开(公告)日：2019-10-10

申请号：US16376508

申请日：2019-04-05

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj , Robert Jan Visser , Nitin Ingle , Zihui Li , Prerna Sonthalia Goradia

IPC: H01L21/3065 , H01L21/3213 , H01L21/311

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing ammonia into the substrate processing region at a temperature above about 200° C. The methods may further include removing an amount of the metal-containing material.

45.

发明授权
Methods for selective etching of a silicon material 有权

公开(公告)号：US10249507B2

公开(公告)日：2019-04-02

申请号：US15496907

申请日：2017-04-25

Applicant: Applied Materials, Inc.

Inventor： Zihui Li , Xing Zhong , Anchuan Wang , Nitin K. Ingle

IPC: H01L21/3065 , H01J37/32 , H01L21/3213 , C30B33/12 , C09K13/06

Abstract: The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.

46.

发明授权
Anisotropic gap etch 有权
Title translation: 各向异性间隙蚀刻

公开(公告)号：US09502258B2

公开(公告)日：2016-11-22

申请号：US14581332

申请日：2014-12-23

Applicant: Applied Materials, Inc.

Inventor： Jun Xue , Ching-Mei Hsu , Zihui Li , Ludovic Godet , Anchuan Wang , Nitin K. Ingle

IPC: H01L21/302 , H01L21/461 , H01L21/3065 , H01L21/265 , H01L21/311 , H01L21/3115 , H01L21/322

CPC classification number: H01L21/3065 , H01J37/32357 , H01J37/32366 , H01J37/32422 , H01J37/3244 , H01J37/32954 , H01L21/2236 , H01L21/265 , H01L21/26506 , H01L21/311 , H01L21/31116 , H01L21/3115 , H01L21/31155 , H01L21/32137 , H01L21/32155 , H01L21/3223

Abstract: A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap formed in a single material made from, for example, a silicon-containing material or a metal-containing material. The method includes directionally ion-implanting the patterned structure to implant the bottom of the gap without implanting substantially the walls of the gap. Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that either (1) the walls are selectively etched relative to the floor of the gap, or (2) the floor is selectively etched relative to the walls of the gap. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.

Abstract translation: 描述了在图案化衬底上各向异性地干蚀刻暴露的衬底材料的方法。图案化衬底具有由例如含硅材料或含金属材料制成的单一材料形成的间隙。该方法包括定向离子注入图案化结构以植入间隙的底部，而基本上不插入间隙的壁。随后，使用含氟前体形成远程等离子体以蚀刻图案化衬底，使得（1）相对于间隙的底板选择性地蚀刻壁，或者（2）相对于壁选择性地蚀刻地板的差距。在没有离子注入的情况下，蚀刻操作将是各向同性的，这是由于在蚀刻过程期间等离子体激发的远程特性。