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417 条记录 (耗时 0.038 秒)

    Heterojunction field effect transistor
    41.
    发明授权
    Heterojunction field effect transistor 有权
    异质结场效应晶体管

    公开(公告)号：US06781163B2

    公开(公告)日：2004-08-24

    申请号：US10311293

    申请日：2002-12-17

    申请人： Takeshi Takagi ,  Akira Inoue

    发明人： Takeshi Takagi ,  Akira Inoue

    IPC分类号： H01L310328

    CPC分类号： H01L29/802 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/78687

    摘要： A region of an Si layer (15) located between source and drain regions (19 and 20) is an Si body region (21) which contains an n-type impurity of high concentration. An Si layer (16) and an SiGe layer (17) are, in an as grown state, undoped layers into which no n-type impurity is doped. Regions of the Si layer 16 and the SiGe layer (17) located between the source and drain regions (19 and 20) are an Si buffer region (22) and an SiGe channel region (23), respectively, which contain the n-type impurity of low concentration. A region of an Si film (18) located directly under a gate insulating film (12) is an Si cap region (24) into which a p-type impurity (5×1017 atoms·cm−3) is doped. Accordingly, a semiconductor device in which an increase in threshold voltage is suppressed can be achieved.

    摘要翻译： 位于源极和漏极区域（19和20）之间的Si层（15）的区域是包含高浓度的n型杂质的Si体区域（21）。 处于生长状态的Si层（16）和SiGe层（17）是未掺杂n型杂质的未掺杂层。 位于源极和漏极区域（19和20）之间的Si层16和SiGe层（17）的区域分别是包含n型的Si缓冲区（22）和SiGe沟道区（23） 低浓度的杂质。 位于栅极绝缘膜（12）正下方的Si膜（18）的区域是掺杂有p型杂质（5×10 17原子·cm -3）的Si帽区域（24）。 因此，可以实现抑制阈值电压增加的半导体装置。

    Optical fiber and fiber grating device
    42.
    发明授权
    Optical fiber and fiber grating device 有权
    光纤和光纤光栅设备

    公开(公告)号：US06728458B2

    公开(公告)日：2004-04-27

    申请号：US10082083

    申请日：2002-02-26

    申请人： Toshiki Taru ,  Shinji Ishikawa ,  Akira Inoue

    发明人： Toshiki Taru ,  Shinji Ishikawa ,  Akira Inoue

    IPC分类号： G02B622

    CPC分类号： G02B6/03694 ,  C03B37/01413 ,  C03B37/01466 ,  C03B2201/12 ,  C03B2201/31 ,  C03B2203/18 ,  C03B2203/23 ,  G02B6/021 ,  G02B6/02119 ,  G02B6/03627

    摘要： An optical fiber comprises a core region, an inner cladding region, and an outer cladding region. Each of the core region and inner cladding region is doped with GeO2, whereas the inner cladding region is also doped with F element. The core region has a refractive index higher than each of the refractive index of the inner cladding region and the refractive index of the outer cladding region. Each of the core region and inner cladding region doped with GeO2 has a UV photosensitivity. The deviation in concentration distribution of GeO2 added to the inner cladding region is so small that the deviation in UV photosensitivity in the inner cladding region is ±10% or less.

    摘要翻译： 光纤包括芯区域，内包层区域和外包层区域。 芯区域和内包层区域均掺杂有GeO 2，而内包层区域也掺杂有F元素。 芯区域的折射率高于内包层区域的折射率和外包层区域的折射率。 掺杂有GeO 2的芯区域和内包层区域都具有UV光敏性。 添加到内包层区域的GeO 2的浓度分布偏差如此小，使得内包层区域的紫外线光敏性的偏差为±10％以下。

    High frequency probe for examining electric characteristics of devices
    45.
    发明授权
    High frequency probe for examining electric characteristics of devices 失效
    用于检查设备电气特性的高频探头

    公开(公告)号：US06617864B2

    公开(公告)日：2003-09-09

    申请号：US09739970

    申请日：2000-12-20

    申请人： Akira Inoue ,  Takayuki Katoh ,  Takeshi Aso ,  Naofumi Iwamoto ,  Takumi Suetsugu

    发明人： Akira Inoue ,  Takayuki Katoh ,  Takeshi Aso ,  Naofumi Iwamoto ,  Takumi Suetsugu

    IPC分类号： G01R3102

    CPC分类号： G01R1/06772 ,  G01R1/06733 ,  G01R1/06766

    摘要： A probe whose characteristic impedance can be accurately adjusted to a desired value with the production of a small number of prototypes. The probe includes a first line with a signal terminal to be connected to a signal electrode of a circuit to be measured and at least one first region connected to the signal terminal and to which one end of a chip capacitor is connected, a second line connected to a terminal of the first line and a junction to be connected to a measuring instrument at the remaining terminal, and an impedance matched to a characteristic impedance of the measuring instrument, a ground connector with a ground terminal to be connected to the ground electrode of the circuit to be measured, and at least one second region connected to the ground terminal and on which the remaining terminal of the chip capacitor is mounted in one-to-one correspondence with the first region. The impedance of the probe viewed from the circuit to be measured is provided by the chip capacitor mounted at specified positions within the first region and the second region.

    摘要翻译： 探头的特征阻抗可以通过少量原型的生产精确地调整到所需的值。 探头包括具有要连接到待测电路的信号电极的信号端子的第一线路和连接到信号端子的至少一个第一区域，并且与芯片电容器的一端连接，第二线路连接 连接到第一线路的端子和与其余端子上的测量仪器连接的接点以及与测量仪器的特性阻抗匹配的阻抗;接地端子的接地连接器，用于连接到接地电极的接地端子 要测量的电路以及连接到接地端子的至少一个第二区域，其中片状电容器的剩余端子与第一区域一一对应地安装在该至少一个第二区域上。 从要测量的电路观察的探头的阻抗由安装在第一区域和第二区域内的特定位置的芯片电容器提供。

    Scanning probe microscope
    46.
    发明授权
    Scanning probe microscope 失效
    扫描探头显微镜

    公开(公告)号：US06242736B1

    公开(公告)日：2001-06-05

    申请号：US09116319

    申请日：1998-07-15

    申请人： Akihiko Honma ,  Takeshi Umemoto ,  Akira Inoue

    发明人： Akihiko Honma ,  Takeshi Umemoto ,  Akira Inoue

    IPC分类号： G01N1312

    CPC分类号： G01Q30/04 ,  Y10S977/85

    摘要： A scanning probe microscope for scanning a probe needle in proximity to a surface of a sample in XY-axis directions while moving at least one of the probe and the sample in a Z-axis direction has a plurality of band-pass filters for passing a plurality of band-pass signals by extracting predetermined frequency bands different one another from a surface geometry signal output by a probe. An image memory stores the respective band-pass signals and corresponding positions on the sample surface, and a color image outputting device outputs a color image by treating each of the respective band-pass signals stored as image data in the image memory as different color data and combining the data. The plurality of band-pass signals includes a first band-pass signal having a first frequency range set to include only abrupt transitions in the sample surface and a second band-pass signal having a second frequency range set to include frequencies slightly outside the first frequency range so that abrupt transitions in geometry on the sample surface are represented by a first color in response to the first band-pass signal and areas directly adjacent the abrupt transitions on the sample surface are represented by a second color different from the first color.

    摘要翻译： 扫描探针显微镜，用于在沿Z轴方向移动探头和样本中的至少一个的同时沿XY轴方向扫描样品表面附近的探针，具有多个带通滤波器，用于使 通过从由探针输出的表面几何信号中提取彼此不同的预定频带，来产生多个带通信号。 图像存储器将各个带通信号和相应的位置存储在样本表面上，并且彩色图像输出装置通过将作为图像数据存储的各个带通信号中的每一个作为不同的颜色数据进行处理来输出彩色图像 并组合数据。 多个带通信号包括具有第一频率范围的第一带通信号，其中第一频率范围被设置为仅包括采样表面中的突变，以及具有第二频率范围的第二带通信号，第二频带设置为包括稍微在第一频率之外的频率 范围，使得样品表面上的几何形状的突变过渡由第一颜色响应于第一带通信号表示，并且与样品表面上的突然跃迁直接相邻的区域由不同于第一颜色的第二颜色表示。

    Image color correction apparatus and recording medium having color program recorded thereon
    47.
    发明授权
    Image color correction apparatus and recording medium having color program recorded thereon 失效
    具有记录有彩色程序的图像颜色校正装置和记录介质

    公开(公告)号：US06229580B1

    公开(公告)日：2001-05-08

    申请号：US08972347

    申请日：1997-11-17

    申请人： Akira Inoue

    发明人： Akira Inoue

    IPC分类号： H04N969

    CPC分类号： H04N9/643 ,  G06F3/04897 ,  G09G5/02 ,  H04N1/62

    摘要： The invention provides an image color correction apparatus by which a hue in a desired region in a color image can be corrected to a desired hue readily. Based on a hue and a hue range designated, a color approximation degree hx of each of noticed pixels of input pixels of an input signal is calculated, where HSV values are represented by (h1, s1, v1), in accordance with hx=((m−|Hue−h1|)/m)×s1×v1, and where correction coefficients of color signals R, G and B of each of the input pixels are represented by (a1, a2, a3), the color signals (R, G, B) are corrected to (R′, G′, B′) so that the corrected color signals (R′, G′, B′) may satisfy (R′, G′, B′)=(R, G, B)+hx×(a1, a2, a3).

    摘要翻译： 本发明提供了一种图像颜色校正装置，通过该装置，可以容易地将彩色图像中的期望区域中的色调校正为期望的色调。 根据指定的色调和色调范围，计算输入信号的输入像素的每个注意像素的颜色近似度hx，其中HSV值由（h1，s1，v1）表示，根据hx =（ （m- | Hue-h1 |）/ m）xs1xv1，并且其中每个输入像素的颜色信号R，G和B的校正系数由（a1，a2，a3）表示，颜色信号（R，G 校正后的色信号（R'，G'，B'）可以满足（R'，G'，B'）=（R，G' B）+ hxx（a1，a2，a3）。

    Semiconductor device
    48.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US6060951A

    公开(公告)日：2000-05-09

    申请号：US167966

    申请日：1998-10-08

    申请人： Akira Inoue

    发明人： Akira Inoue

    IPC分类号： H01L21/822 ,  H01L27/04 ,  H01P5/08 ,  H03F1/02 ,  H03F3/60 ,  H03F3/14 ,  H03F3/68

    CPC分类号： H01L23/66 ,  H01L23/4824 ,  H01L24/48 ,  H01L24/49 ,  H03F3/604 ,  H01L2223/6655 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L24/45 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19051 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011

    摘要： A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface opposite the first main surface; a semiconductor chip amplifying a high frequency signal and including semiconductor cells on the first main surface, each semiconductor cell including semiconductor components and being connected to a gate pad and a drain pad, each semiconductor component having an electrode; internal matching circuits; a harmonic matching circuit for each semiconductor cell and connected between the semiconductor chip and one of the internal matching circuits, the harmonic matching circuit including a capacitor and an inductor; and a package enclosing the semiconductor substrate, the semiconductor chip, the internal matching circuits, and the harmonic matching circuit. In this structure, since harmonics are processed in each semiconductor cell, the phases of the harmonics processed in the semiconductor cells are uniform. Losses caused by the characteristic of harmonic signals themselves and a phase difference due to transmission line differences between the harmonic matching circuit and the semiconductor chip are reduced, improving harmonic load impedance.

    摘要翻译： 半导体器件包括具有第一主表面和与第一主表面相对的第二主表面的半导体衬底; 半导体芯片放大高频信号并且包括第一主表面上的半导体单元，每个半导体单元包括半导体元件并连接到栅极焊盘和漏极焊盘，每个半导体部件具有电极; 内部匹配电路; 用于每个半导体单元并且连接在半导体芯片和一个内部匹配电路之间的谐波匹配电路，所述谐波匹配电路包括电容器和电感器; 以及封装半导体衬底，半导体芯片，内部匹配电路和谐波匹配电路的封装。 在这种结构中，由于在每个半导体单元中处理了谐波，所以在半导体单元中处理的谐波的相位是均匀的。 由谐波信号本身的特性引起的损耗和谐波匹配电路与半导体芯片之间的传输线差异导致的相位差减小，提高谐波负载阻抗。

    Probe scanning apparatus for probe microscope
    49.
    发明授权
    Probe scanning apparatus for probe microscope 失效
    探针显微镜探头扫描仪

    公开(公告)号：US5965885A

    公开(公告)日：1999-10-12

    申请号：US968193

    申请日：1997-11-12

    申请人： Akira Inoue

    发明人： Akira Inoue

    IPC分类号： G01B21/30 ,  F16F9/30 ,  G01B7/34 ,  G01N27/00 ,  G01N37/00 ,  G01Q10/00 ,  G01Q10/04 ,  G01Q90/00 ,  G01R22/02 ,  H01J37/00

    CPC分类号： G01Q10/04 ,  B82Y35/00 ,  G01Q70/04 ,  Y10S977/872

    摘要： A spring is connected to an edge section of a sample side of a spindle receiving a force in the Z-axial direction by a first poise coil motor, and a probe is attached to the tip of the spring. The spindle is supported by an internal tube with a spring. The movement of the spindle is enlarged by the spring to be conveyed to the probe, whereby displacement of the probe is amplified. For this reason, a resonance frequency f0 of a system comprising the movable element of the first poise coil motor, spindle, spring, spring and probe can be increased. If the spring is changed to springs in two stages, a resonance frequency f0 of the system can be increased with comparatively compact configuration.

    摘要翻译： 弹簧通过第一调节线圈电动机连接到接受Z轴方向的力的心轴的样品侧的边缘部分，并且探针附接到弹簧的尖端。 主轴由带有弹簧的内管支撑。 主轴的运动被弹簧扩大以被传送到探头，从而放大探头的位移。 为此，可以增加包括第一调节线圈电动机，主轴，弹簧，弹簧和探头的可移动元件的系统的共振频率f0。 如果弹簧分成两个阶段，弹簧可以通过比较紧凑的结构来增加系统的共振频率f0。

    Exposure precision tester and exposure precision testing method for camera
    50.
    发明授权
    Exposure precision tester and exposure precision testing method for camera 失效
    曝光精度测试仪和相机曝光精度测试方法

    公开(公告)号：US5895132A

    公开(公告)日：1999-04-20

    申请号：US8634

    申请日：1998-01-16

    申请人： Yasuo Asakura ,  Shinya Takahashi ,  Kiyoshi Doi ,  Akira Watanabe ,  Tadashi Ushiyama ,  Akira Inoue

    发明人： Yasuo Asakura ,  Shinya Takahashi ,  Kiyoshi Doi ,  Akira Watanabe ,  Tadashi Ushiyama ,  Akira Inoue

    IPC分类号： G03B17/30 ,  G03B43/00

    CPC分类号： G03B17/30 ,  G03B43/00

    摘要： In an exposure precision tester for a camera, including a flexible wiring board where a photometric sensor is implemented is contained in a case. The case has an appearance similar to that of a film cartridge loaded by drop-in operation and is insertable into a film cartridge cell of the camera. Exposure test can be performed without a back lid because the photometric sensor measures and outputs the exposure energy in the state that the photometric sensor is positioned at a film mask portion by rotating an operation part of a feed shaft with the case being inserted in the camera.

    摘要翻译： 在用于相机的曝光精度测试器中，包括实现光度传感器的柔性布线板。 该外壳具有与通过插入操作装载的暗盒类似的外观，并且可插入照相机的暗盒单元中。 可以在没有后盖的情况下进行曝光测试，因为光度传感器在将测量传感器位于胶片掩模部分的状态下测量并输出曝光能量，通过旋转进给轴的操作部分，并将壳体插入相机 。