公开(公告)号：US20180363133A1

公开(公告)日：2018-12-20

申请号：US15625797

申请日：2017-06-16

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Robert Jan Visser ,  Pramit Manna ,  Abhijit Basu Mallick ,  Prerna Goradia

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  H01L21/768 ,  H01L21/762

Abstract: Methods for filling a substrate feature with a seamless silicon nitride gapfill through a radical based hot wire chemical vapor deposition process are described. Also described is an apparatus for performing the radical based hot wire chemical vapor deposition of the silicon nitride gapfill.

公开(公告)号：US20180354804A1

公开(公告)日：2018-12-13

申请号：US16002222

申请日：2018-06-07

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: C01B32/28 ,  C01B32/26 ,  H01L21/308

CPC classification number: H01L21/3086 ,  C01B32/25 ,  C01B32/26 ,  C01B32/28 ,  C23C16/26 ,  C23C16/505 ,  H01L21/02115 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31144

Abstract: Apparatuses and methods to manufacture integrated circuits are described. A method of forming film on a substrate is described. The film is formed on a substrate by exposing a substrate to a diamond-like carbon precursor having an sp3 content of greater than 40 percent. Methods of etching a substrate are described. Electronic devices comprising a diamond-like carbon film are also described.

公开(公告)号：US20180350606A1

公开(公告)日：2018-12-06

申请号：US16000431

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Xinliang Lu ,  Srinivas Gandikota ,  Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/28 ,  H01L21/763 ,  H01L21/768

Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.

公开(公告)号：US20180350597A1

公开(公告)日：2018-12-06

申请号：US16001251

申请日：2018-06-06

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Fei Wang ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/02 ,  H01L21/3065

Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

公开(公告)号：US10128150B2

公开(公告)日：2018-11-13

申请号：US15083590

申请日：2016-03-29

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Rui Cheng ,  Kelvin Chan ,  Abhijit Basu Mallick

IPC: C23C16/00 ,  H01L21/768 ,  H01L21/285 ,  C23C16/04 ,  C23C16/16 ,  C23C16/34 ,  C23C16/46

Abstract: Implementations of the present disclosure generally relate to methods for forming thin films in high aspect ratio feature definitions. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a boron-containing precursor comprising a ligand into an interior processing volume of a process chamber, flowing a nitrogen-containing precursor comprising the ligand into the interior processing volume and thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposit a boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate.

公开(公告)号：US20180240706A1

公开(公告)日：2018-08-23

申请号：US15902362

申请日：2018-02-22

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Ziqing Duan

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

Abstract: Processing methods to create self-aligned contacts are described. A conformal liner can be deposited in a feature in a substrate surface leaving a gap between the walls of the liner. A tungsten film can be deposited in the gap of the liner and volumetrically expanded. The expanded film can be removed and replaced with a contact material to a make a contact. In some embodiments, a conformal tungsten film can be formed in the feature leaving a gap between the walls. A dielectric can be deposited in the gap and the conformal tungsten film can be volumetrically expanded to grow two pillars. The pillars can be removed and replaced with a contact material to make two contacts.

公开(公告)号：US20180130671A1

公开(公告)日：2018-05-10

申请号：US15805764

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Yihong Chen ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/321 ,  H01L21/311 ,  H01L21/285 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/32115 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/28568 ,  H01L21/31111 ,  H01L21/32051 ,  H01L21/32136

Abstract: Processing methods comprising depositing a film on a substrate surface and in a surface feature with chemical planarization to remove the film from the substrate surface, leaving the film in the feature. A pillar is grown from the film so that the pillar grows orthogonally to the substrate surface.

公开(公告)号：US20180096847A1

公开(公告)日：2018-04-05

申请号：US15718148

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/033 ,  C23F1/00 ,  H01L21/3213

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/32133 ,  H01L21/32139

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US09640400B1

公开(公告)日：2017-05-02

申请号：US14961920

申请日：2015-12-08

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Pramit Manna

IPC: H01L21/336 ,  H01L21/225 ,  H01L29/66 ,  H01L21/324 ,  H01L21/02 ,  H01L29/167

CPC classification number: H01L21/2254 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/324 ,  H01L29/167 ,  H01L29/66795 ,  H01L29/66803

Abstract: Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In one embodiment, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film may include boron, phosphorous, and other suitable dopants. The film may be subsequently annealed to diffuse the dopants into the 3D structures.

公开(公告)号：US20160093488A1

公开(公告)日：2016-03-31

申请号：US14502492

申请日：2014-09-30

Applicant: Applied Materials, Inc.

Inventor： Kiran V. Thadani ,  Abhijit Basu Mallick ,  Sanjay Kamath

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/762

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/76224 ,  H01L21/76837

Abstract: Methods are described for forming a flowable low-k dielectric film on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. Shortly after deposition, the silicon-carbon-oxygen layer is treated by exposure to a hydrogen-and-nitrogen-containing precursor such as ammonia prior to curing. The treatment may remove residual moisture from the silicon-carbon-oxygen layer and may make the lattice more resilient during curing and subsequent processing. The treatment may reduce shrinkage of the silicon-carbon-oxygen layer during subsequent processing.

Abstract translation: 描述了在图案化衬底上形成可流动的低k电介质膜的方法。 该膜可以是硅 - 碳 - 氧（Si-C-O）层，其中硅和碳成分来自含硅和碳的前体，而氧可以来自在远程等离子体区域中激活的含氧前体 。 沉积后不久，在固化之前通过暴露于含氢和氮的前体如氨来处理硅 - 碳 - 氧层。 该处理可以从硅 - 碳 - 氧层去除残留的水分，并且可以使晶格在固化和随后的加工过程中更有弹性。 该处理可以在随后的处理期间减小硅 - 碳 - 氧层的收缩。