公开(公告)号：US20220127721A1

公开(公告)日：2022-04-28

申请号：US17078474

申请日：2020-10-23

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Vicknesh Sahmuganathan ,  Zhongxin Chen ,  Gu Jiteng ,  Eswaranand Venkatasubramanian ,  Loh Kian Ping ,  Abhijit Basu Mallick ,  John Sudijono

IPC: C23C16/27 ,  H01L21/02 ,  C23C16/54 ,  C23C16/455 ,  C23C16/511

Abstract: Methods of depositing a diamond layer are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which nanocrystalline diamond deposited on a substrate, wherein the processing methods result in a nanocrystalline diamond hard mask having high hardness.

公开(公告)号：US12037679B2

公开(公告)日：2024-07-16

申请号：US17633010

申请日：2021-12-15

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Zhongxin Chen ,  Kian Ping Loh ,  John Sudijono ,  Haisen Xu ,  Sze Chieh Tan ,  Yuanxing Han ,  Jiecong Tang ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick

IPC: C23C16/27 ,  C01B32/26 ,  C08F2/48 ,  C23C16/02 ,  C23C16/04 ,  C23C16/511

CPC classification number: C23C16/274 ,  C01B32/26 ,  C08F2/48 ,  C23C16/0272 ,  C23C16/042 ,  C23C16/511

Abstract: Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.

公开(公告)号：US20240234127A1

公开(公告)日：2024-07-11

申请号：US18615539

申请日：2024-03-25

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56

CPC classification number: H01L21/02118 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02304

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

公开(公告)号：US20240229231A1

公开(公告)日：2024-07-11

申请号：US18585303

申请日：2024-02-23

Applicant: Applied Materials, Inc.

Inventor： Sze Chieh Tan ,  Vicknesh Sahmuganathan ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  John Sudijono

IPC: C23C16/27 ,  B82Y40/00 ,  C23C16/02 ,  C23C16/455

CPC classification number: C23C16/279 ,  C23C16/0227 ,  C23C16/45536 ,  B82Y40/00

Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.

公开(公告)号：US20240055255A1

公开(公告)日：2024-02-15

申请号：US17880797

申请日：2022-08-04

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Xinke Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC: H01L21/033 ,  H01L21/02

CPC classification number: H01L21/0337 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02211

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include treating a substrate comprising a carbon-containing surface and a silicon-containing surface with one or more of ozone or hydrogen peroxide to passivate the silicon-containing surface. In one or more embodiments, a carbon-containing layer is then selectively deposited on the carbon-containing surface and not on the silicon-containing surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the carbon-containing surface and not on the silicon-containing surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate.

公开(公告)号：US20230382933A1

公开(公告)日：2023-11-30

申请号：US18232421

申请日：2023-08-10

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC: C07F11/00 ,  C23C16/455 ,  C23C16/44 ,  C23C16/02 ,  C23C16/18 ,  C23C16/56

CPC classification number: C07F11/005 ,  C23C16/45553 ,  C23C16/4408 ,  C23C16/0272 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56 ,  C23C16/0227 ,  C23C16/0209

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20230279540A1

公开(公告)日：2023-09-07

申请号：US17633010

申请日：2021-12-15

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Zhongxin Chen ,  Kian Ping Loh ,  John Sudijono ,  Haisen Xu ,  Sze Chieh Tan ,  Yuanxing Han ,  Jiecong Tang ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick

IPC: C23C16/27 ,  C01B32/26 ,  C08F2/48 ,  C23C16/04 ,  C23C16/511 ,  C23C16/02

CPC classification number: C23C16/274 ,  C01B32/26 ,  C08F2/48 ,  C23C16/0272 ,  C23C16/042 ,  C23C16/511

Abstract: Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.

公开(公告)号：US20230142926A1

公开(公告)日：2023-05-11

申请号：US18096347

申请日：2023-01-12

Applicant: Applied Materials, Inc.

Inventor： Yong Wang ,  Doreen Wei Ying Yong ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC: C23C16/02 ,  C23C16/04 ,  C23C22/82 ,  C23C16/56 ,  C23C22/77

CPC classification number: C23C16/0227 ,  C23C16/04 ,  C23C22/82 ,  C23C16/56 ,  C23C22/77

Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

公开(公告)号：US20220406595A1

公开(公告)日：2022-12-22

申请号：US17355154

申请日：2021-06-22

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Doreen Wei Ying Yong ,  John Sudijono ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  Michael Haverty ,  Muthukumar Kaliappan ,  Yingqian Chen ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20220356197A1

公开(公告)日：2022-11-10

申请号：US17236020

申请日：2021-04-21

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC: C07F11/00 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56 ,  C23C16/02 ,  C23C16/44

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.