公开(公告)号：US20080083366A1

公开(公告)日：2008-04-10

申请号：US11854864

申请日：2007-09-13

申请人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

发明人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

IPC分类号： C30B23/00 ,  C30B25/00

CPC分类号： H01L29/1608 ,  C30B23/002 ,  C30B23/005 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634 ,  Y10T428/21

摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

摘要翻译： 公开了无微波，单晶，碳化硅（SiC）和相关制造方法。 通过将源材料和种子材料放置在升华系统的反应坩埚中的种子保持器上来生长SiC，其中包括源材料，反应坩埚和种子保持器的升华系统的构成成分基本上没有无意的杂质。 通过控制PVT过程中生长温度，生长压力，SiC升华通量和组成以及种子材料或种子材料上生长的SiC晶体之间的温度梯度，消除了微管诱导过程的不稳定性， 在种子材料上生长游离的SiC晶体。

公开(公告)号：US07344755B2

公开(公告)日：2008-03-18

申请号：US10646673

申请日：2003-08-21

申请人： Kevin L. Beaman ,  Ronald A. Weimer ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Trung T. Doan ,  Cem Basceri ,  David J. Kubista ,  Lingyi A. Zheng

发明人： Kevin L. Beaman ,  Ronald A. Weimer ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Trung T. Doan ,  Cem Basceri ,  David J. Kubista ,  Lingyi A. Zheng

IPC分类号： C23C16/00

CPC分类号： C23C16/45546 ,  C23C16/4404

摘要： The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a batch process. One implementation involves pretreating a surface of a process chamber by contemporaneously introducing first and second pretreatment precursors (e.g., TiCl4 and NH3) to deposit a pretreatment material on a the chamber surface. After the pretreatment, the first microfeature workpiece may be placed in the chamber and TiN may be deposited on the microfeature workpiece by alternately introducing quantities of first and second deposition precursors.

摘要翻译： 本公开提供了可用于处理微特征工件（例如半导体晶片）的方法和装置。 一些方面在分批过程中沉积TiN具有特殊的用途。 一个实施方案包括通过同时引入第一和第二预处理前体（例如，TiCl 4和NH 3）来预处理处理室的表面，以将预处理材料沉积在室表面上 。 在预处理之后，可以将第一微特征工件放置在腔室中，并且可以通过交替地引入量的第一和第二沉积前体将TiN沉积在微特征工件上。

公开(公告)号：US07235138B2

公开(公告)日：2007-06-26

申请号：US10646607

申请日：2003-08-21

申请人： Lingyi A. Zheng ,  Trung T. Doan ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Ronald A. Weimer ,  David J. Kubista ,  Kevin L. Beaman ,  Cem Basceri

发明人： Lingyi A. Zheng ,  Trung T. Doan ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Ronald A. Weimer ,  David J. Kubista ,  Kevin L. Beaman ,  Cem Basceri

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00

CPC分类号： C23C16/4583 ,  C23C16/45546 ,  C23C16/45578 ,  Y10S206/832

摘要： The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.

摘要翻译： 本公开描述了用于处理微特征工件的装置和方法，例如通过使用原子层沉积在微电子半导体上沉积材料。 这些设备中的一些包括微型工件保持器，其包括气体分配器。 一个示例性实施例提供了适于保持多个微特征工件的微特征工件保持器。 该工件保持器包括多个工件支撑件和气体分配器。 工件支撑件适于以间隔的关系支撑多个微特征工件以限定与每个微特征工件的表面相邻的工艺空间。 气体分配器包括入口和多个出口，其中每个出口被定位成将处理气体流引导到处理空间中的一个中。

公开(公告)号：US20070093034A1

公开(公告)日：2007-04-26

申请号：US11606478

申请日：2006-11-29

申请人： Cem Basceri ,  Garo Derderian

发明人： Cem Basceri ,  Garo Derderian

IPC分类号： H01L21/20

CPC分类号： H01L21/7687 ,  H01L21/76877 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/75 ,  Y10S438/964

摘要： The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.

摘要翻译： 本发明包括形成半导体结构的方法。 提供半导体衬底，并且形成由半导体衬底支撑的导电节点。 第一导电材料形成在导电节点上并成形为容器。 容器具有在其中延伸的开口和靠近开口的上表面。 容器开口至少部分地填充有绝缘材料。 第二导电材料形成在至少部分填充的容器开口上并且物理地抵靠容器的上表面。 本发明还包括半导体结构。

公开(公告)号：US20070093022A1

公开(公告)日：2007-04-26

申请号：US11638931

申请日：2006-12-13

申请人： Cem Basceri ,  Gurtej Sandhu

发明人： Cem Basceri ,  Gurtej Sandhu

IPC分类号： H01L21/8242 ,  H01L51/40

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852

摘要： A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with a retaining structure which engages the sidewalls, with the retaining structure comprising a fluid pervious material. A capacitor dielectric material is deposited over the capacitor electrodes through the fluid pervious material of the retaining structure effective to deposit capacitor dielectric material over portions of the sidewalls received below the retaining structure. Capacitor electrode material is deposited over the capacitor dielectric material through the fluid pervious material of the retaining structure effective to deposit capacitor electrode material over at least some of the capacitor dielectric material received below the retaining structure. Integrated circuitry independent of method of fabrication is also contemplated.

摘要翻译： 形成多个电容器的方法包括提供包括侧壁的多个电容器电极。 多个电容器电极至少部分地由与侧壁接合的保持结构支撑，保持结构包括透液材料。 电容器电介质材料沉积在电容器电极上，通过保持结构的流体可渗透材料，其有效地将电容器电介质材料沉积在容纳在保持结构下方的侧壁的部分上。 电容器电极材料通过保持结构的流体可透过材料沉积在电容器介电材料上，有效地将电容器电极材料沉积在容纳在保持结构下方的电容器电介质材料的至少一些之上。 还考虑了与制造方法无关的集成电路。

公开(公告)号：US07192828B2

公开(公告)日：2007-03-20

申请号：US10819420

申请日：2004-04-07

申请人： Cem Basceri ,  Gurtej S. Sandhu ,  Sam Yang

发明人： Cem Basceri ,  Gurtej S. Sandhu ,  Sam Yang

IPC分类号： H01L21/8242

CPC分类号： H01L28/75 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31604 ,  H01L21/31683 ,  H01L27/10811 ,  H01L28/55

摘要： A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials and methods of making such capacitors and their incorporation into DRAM cells is provided. A preferred method includes providing a non-oxide electrode, oxidizing an upper surface of the non-oxide electrode, depositing a high dielectric constant oxide dielectric material on the oxidized surface of the non-oxide electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.

摘要翻译： 提供了使用非氧化物电极和高介电常数氧化物电介质材料的稳定电容器以及制造这种电容器并将其并入DRAM单元的方法。 优选的方法包括提供非氧化物电极，氧化非氧化物电极的上表面，在非氧化物电极的氧化表面上沉积高介电常数氧化物电介质材料，以及在高电极上沉积上层电极 介电常数氧化物介电材料。

公开(公告)号：US20070026601A1

公开(公告)日：2007-02-01

申请号：US11517209

申请日：2006-09-06

申请人： Cem Basceri ,  F. Gealy ,  Gurtej Sandhu

发明人： Cem Basceri ,  F. Gealy ,  Gurtej Sandhu

IPC分类号： H01L21/8242 ,  H01L21/20

CPC分类号： H01L27/10855 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/57

摘要： The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The dielectric material/barrier layer constructions can be incorporated into capacitors. The capacitors can be used in, for example, DRAM cells, which in turn can be used in electronic systems.

摘要翻译： 本发明包括其中金属氧化物电介质材料沉积在阻挡层上的方法。 阻挡层可以包括金属和碳，硼和氮中的一种或多种的组合物，并且介电材料的金属氧化物可以包含与阻挡层相同的金属。 电介质材料/阻挡层结构可以结合到电容器中。 电容器可以用在例如DRAM单元中，DRAM单元又可以用在电子系统中。

公开(公告)号：US20070015358A1

公开(公告)日：2007-01-18

申请号：US11525707

申请日：2006-09-21

申请人： Cem Basceri ,  Gurtej Sandhu ,  H. Manning

发明人： Cem Basceri ,  Gurtej Sandhu ,  H. Manning

IPC分类号： H01L21/44

CPC分类号： H01L21/76823 ,  H01L21/28512 ,  H01L21/76895 ,  Y10T428/12542

摘要： The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of forming a conductive contact to a source/drain region of a field effect transistor includes providing gate dielectric material intermediate a transistor gate and a channel region of a field effect transistor. At least some of the gate dielectric material extends to be received over at least one source/drain region of the field effect transistor. The gate dielectric material received over the one source/drain region is exposed to conditions effective to change it from being electrically insulative to being electrically conductive and in conductive contact with the one source/drain region. Other aspects and implementations are contemplated.

公开(公告)号：US07150789B2

公开(公告)日：2006-12-19

申请号：US10208314

申请日：2002-07-29

申请人： Paul J. Castovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

发明人： Paul J. Castovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

IPC分类号： C30B23/00

CPC分类号： C30B25/14 ,  C23C14/0641 ,  C23C14/081 ,  C23C16/34 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45531

摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. After forming the first monolayer, a reactive intermediate gas is flowed to the substrate within the deposition chamber. The reactive intermediate gas is capable of reaction with an intermediate reaction by-product from the first precursor flowing under conditions of the reactive intermediate gas flowing. After flowing the reactive intermediate gas, a second precursor gas is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.

摘要翻译： 原子层沉积方法包括将半导体衬底定位在原子层沉积室内。 第一前体气体流到原子层沉积室内的衬底，有效地在衬底上形成第一单层。 在形成第一单层之后，反应性中间气体流到沉积室内的衬底。 反应性中间体气体能够与在反应性中间体气体流动的条件下流动的第一前体的中间反应副产物反应。 在流动反应性中间气体之后，第二前体气体流到沉积室内的衬底，有效地在第一单层上形成第二单层。 考虑了其他方面和实现。

公开(公告)号：US20060281238A1

公开(公告)日：2006-12-14

申请号：US11474431

申请日：2006-06-26

申请人： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri ,  Elif Berkman

发明人： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri ,  Elif Berkman

IPC分类号： H01L21/338

CPC分类号： H01L29/7783 ,  H01L29/2003

摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.

摘要翻译： 补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或 在基板的近表面区域内的过量电荷。 缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。 此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。