公开(公告)号：US20090035463A1

公开(公告)日：2009-02-05

申请号：US11833754

申请日：2007-08-03

申请人： Anthony Dip

发明人： Anthony Dip

IPC分类号： C23C16/452 ,  C23C16/455

CPC分类号： H01L21/67109 ,  H01L21/67098

摘要： Thermal processing system and method for forming an oxide layer on substrates. The thermal processing system has a gas injector with first and second fluid lumens confining first and second process gases, such an molecular hydrogen and molecular oxygen, from each other and another fluid lumen that receives the process gases from the first and second fluid lumens. The first and second process gases combine and react in this fluid lumen to form a reaction product. The reaction product is injected from this fluid lumen into a process chamber of the thermal processing system, where substrates are exposed to the reaction product resulting in formation of an oxide layer.

摘要翻译： 热处理系统和在基片上形成氧化物层的方法。 热处理系统具有气体注射器，其具有第一和第二流体流明，其将第一和第二处理气体（例如分子氢和分子氧）彼此限制，另一个流体腔从第一和第二流体流体接收处理气体。 第一和第二工艺气体在该流体腔中结合并反应以形成反应产物。 将反应产物从该流体腔注射到热处理系统的处理室中，其中基板暴露于反应产物，从而形成氧化物层。

公开(公告)号：US07468311B2

公开(公告)日：2008-12-23

申请号：US10673375

申请日：2003-09-30

申请人： Anthony Dip ,  Seungho Oh ,  Allen John Leith

发明人： Anthony Dip ,  Seungho Oh ,  Allen John Leith

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C23C16/24 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

摘要： A method is provided for depositing a silicon-containing film on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed on a substrate by providing a substrate in a process chamber of a processing system, heating the substrate, and exposing a hexachlorodisilane (HCD) process gas to the substrate. The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate. A processing tool containing a processing system for forming a silicon-containing film on s substrate using a HCD process gas is provided.

摘要翻译： 提供了一种用于在处理系统中通过低压沉积工艺在衬底上沉积含硅膜的方法。 通过在处理系统的处理室中提供衬底，加热衬底并将六氯二硅烷（HCD）工艺气体暴露于衬底，可以在衬底上形成含硅膜。 该方法可以在衬底的硅表面上选择性地沉积外延含硅膜，或者在衬底上非选择性地沉积含硅膜。 提供了一种包含用于使用HCD工艺气体在衬底上形成含硅膜的处理系统的处理工具。

公开(公告)号：US20070238313A1

公开(公告)日：2007-10-11

申请号：US11278054

申请日：2006-03-30

申请人： Anthony Dip

发明人： Anthony Dip

IPC分类号： H01L21/31

CPC分类号： H01L21/3143 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/31662

摘要： A method for performing an oxidation process on a plurality of substrates in a batch processing system. According to one embodiment, the method includes selecting a N2O-based oxidation process for the substrates including a first process gas containing N2O that thermally decomposes in a process chamber of the batch processing system to N2, O2, and NO byproducts, and generating a replacement NO-based oxidation process for the substrates including a second process gas containing N2, O2, and NO with molar concentrations that mimic that of the N2, O2, and NO byproducts in the N2O-based oxidation process. According to another embodiment of the invention, the NO-based oxidation process contains NO, O2, and an inert gas.

摘要翻译： 一种在批处理系统中对多个基板进行氧化处理的方法。 根据一个实施方案，该方法包括选择用于基材的基于N 2 O的氧化方法，其包括在处理室中热分解的含有N 2 O 2的第一工艺气体 的批次处理系统转移到N 2 O 2 O 2和NO副产物，并且为包括含有N 2的第二工艺气体的衬底产生替代的NO基氧化工艺， O 2，O 2，和NO，其摩尔浓度模拟N 2，O 2 N和NO的摩尔浓度 在N 2 O基氧化方法中的副产物。 根据本发明的另一个实施方案，基于NO的氧化方法包含NO，O 2 H 2和惰性气体。

公开(公告)号：US20060160288A1

公开(公告)日：2006-07-20

申请号：US11035730

申请日：2005-01-18

申请人： Allen Leith ,  Anthony Dip ,  Seungho Oh

发明人： Allen Leith ,  Anthony Dip ,  Seungho Oh

IPC分类号： H01L21/8234

CPC分类号： H01L21/32055 ,  C23C16/045 ,  C23C16/24 ,  H01L21/76877

摘要： A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachlorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl4, and SiHCl3 gases. Alternatively, the micro-feature can be exposed to (SiH4+HCl).

摘要翻译： 提供了一种用于在处理系统中通过低压沉积工艺在衬底上的微特征中沉积含硅膜的方法。 通过在处理系统的处理室中提供衬底，并将六氯二硅烷（HCD）工艺气体暴露于衬底，可以在微特征中形成含硅膜。 提供了一种包含用于使用诸如HCD处理气体的含硅气体和含氯气体在微特征中形成含硅膜的处理系统的处理工具。 或者，微特征可以暴露于DCS，SiCl 4和SiHCl 3气体。 或者，微特征可以暴露于（SiH 4+ + HCl）。

公开(公告)号：US20050199877A1

公开(公告)日：2005-09-15

申请号：US10797876

申请日：2004-03-10

申请人： Anthony Dip ,  Pradip Roy ,  Sanjeev Kaushal ,  Allen Leith ,  Seungho Oh ,  Raymond Joe

发明人： Anthony Dip ,  Pradip Roy ,  Sanjeev Kaushal ,  Allen Leith ,  Seungho Oh ,  Raymond Joe

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L21/318 ,  H01L29/51 ,  H01L29/12 ,  H01L21/36 ,  H01L21/3205

CPC分类号： H01L21/31604 ,  H01L21/02142 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3185 ,  Y10T29/41

摘要： A method for using a silicon germanium (SiGe) surface layer to integrate a high-k dielectric layer into a semiconductor device. The method forms a SiGe surface layer on a substrate and deposits a high-k dielectric layer on the SiGe surface layer. An oxide layer, located between the high-k dielectric layer and an unreacted portion of the SiGe surface layer, is formed during one or both of deposition of the high-k dielectric layer and an annealing process after deposition of the high-k dielectric layer. The method further includes forming an electrode layer on the high-k dielectric layer.

摘要翻译： 一种使用硅锗（SiGe）表面层将高k电介质层集成到半导体器件中的方法。 该方法在衬底上形成SiGe表面层，并在SiGe表面层上沉积高k电介质层。 在高k电介质层的沉积和沉积高k电介质层之间的退火工艺中的一个或两个期间，形成位于高k电介质层和SiGe表面层的未反应部分之间的氧化物层 。 该方法还包括在高k电介质层上形成电极层。

公开(公告)号：US20050056219A1

公开(公告)日：2005-03-17

申请号：US10662522

申请日：2003-09-16

申请人： Anthony Dip ,  Michael Toeller ,  Kimberly Reid

发明人： Anthony Dip ,  Michael Toeller ,  Kimberly Reid

IPC分类号： C23C16/00 ,  C23C16/30 ,  C23C16/40 ,  H01L20060101

CPC分类号： C23C16/45531 ,  C23C16/308 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45546

摘要： A method is provided for forming a metal-containing film on a substrate by a sequential gas exposure process in a batch type processing system. A metal-containing film can be formed on a substrate by providing a substrate in a process chamber of a batch type processing system, heating the substrate, sequentially flowing a pulse of a metal-containing precursor gas and a pulse of a reactant gas in the process chamber, and repeating the flowing processes until a metal-containing film with desired film properties is formed on the substrate. The method can form a metal-oxide film, for example HfO2 and ZrO2, a metal-oxynitride film, for example HfxOzNw, and HfxOzNw, a metal-silicate film, for example HfxSiyOz and ZrxSiyOz, and a nitrogen-containing metal-silicate film, for example HfxSiyOzNw and ZrxSiyOzNw. A processing tool containing a batch type processing system for forming a metal-containing film by a sequential gas exposure process is provided.

摘要翻译： 提供了一种通过在间歇式处理系统中通过连续气体曝光工艺在基板上形成含金属膜的方法。 通过在间歇式处理系统的处理室中设置基板，在衬底上形成含金属膜，加热衬底，顺序地将含金属的前体气体的脉冲和反应气体的脉冲流入 并且重复流动过程，直到在基底上形成具有所需膜特性的含金属膜。 该方法可以形成金属氧化物膜，例如HfO 2和ZrO 2，金属 - 氮氧化物膜，例如Hf x O z N w和Hf x O z N w，金属硅酸盐膜，例如Hf x Sb y O z和Zr x S y O z，以及含氮金属硅酸盐膜 ，例如HfxSiyOzNw和ZrxSiyOzNw。 提供了一种包含用于通过连续气体曝光工艺形成含金属膜的间歇式处理系统的加工工具。

公开(公告)号：US06799940B2

公开(公告)日：2004-10-05

申请号：US10310141

申请日：2002-12-05

申请人： Raymond Joe ,  Anthony Dip

发明人： Raymond Joe ,  Anthony Dip

IPC分类号： B65G4907

CPC分类号： H01L21/68735 ,  H01L21/67109 ,  H01L21/67309 ,  H01L21/67346 ,  Y10S414/135 ,  Y10S414/137

摘要： A removable semiconductor wafer susceptor used for supporting a substrate during batch processing. The susceptor includes a flat circular central plane with a predetermined outer diameter. The susceptor is sized to fit within an inner diameter formed from wafer support ledges of a wafer transport container. The susceptor includes edges that are chamfered and rounded to lessen stress concentration at the edges. The susceptor is transported through processing by a sieving action of transport automation.

摘要翻译： 用于在批量处理期间支撑基板的可移除的半导体晶片基座。 基座包括具有预定外径的平圆形中心平面。 基座的尺寸设计成适合于由晶片运输容器的晶片支撑壁架形成的内径。 基座包括倒角和倒圆的边缘，以减少边缘处的应力集中。 感受器通过运输自动化的筛选动作运输。

公开(公告)号：US08466045B2

公开(公告)日：2013-06-18

申请号：US12830210

申请日：2010-07-02

申请人： John Gumpher ,  Seungho Oh ,  Anthony Dip

发明人： John Gumpher ,  Seungho Oh ,  Anthony Dip

IPC分类号： H01L21/20

CPC分类号： H01L21/02661 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02664

摘要： A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface.

摘要翻译： 用于形成应变外延碳掺杂硅（Si）膜的方法，例如用于电子器件的升高的源极和漏极区域。 该方法包括提供具有外延Si表面和图案化膜的结构，在结构上非选择性地沉积掺杂碳的Si膜，所述掺杂碳的Si膜含有沉积到外延Si表面上的外延碳掺杂的Si膜 以及沉积到图案化膜上的非外延碳掺杂Si膜，并且在掺碳的Si膜上非选择性地沉积Si膜，所述Si膜含有沉积到外延碳掺杂的Si膜上的外延Si膜，以及 沉积在非外延碳掺杂Si膜上的非外延Si膜。 该方法还包括干蚀刻去除非外延Si膜，非外延碳掺杂Si膜，并且小于整个外延Si膜以在外延Si表面上形成应变外延碳掺杂Si膜。

公开(公告)号：US07816278B2

公开(公告)日：2010-10-19

申请号：US12058470

申请日：2008-03-28

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/33

CPC分类号： H01L21/3141 ,  C23C16/02 ,  C23C16/405 ,  C23C16/44 ,  C23C16/45546 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/3162 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645

摘要： An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.

摘要翻译： 一种用于在批量处理系统中在多个基板上形成高k电介质膜的原位复合膜沉积方法。 该方法包括将多个基板装载到批处理系统的处理室中，在沉积第一部分之后，通过原子层沉积（ALD）沉积高k电介质膜的第一部分，在沉积第一部分之后，并且不存在 从所述处理室中移除所述多个基板，通过化学气相沉积（CVD）将所述高k电介质膜的第二部分沉积在所述第一部分上，以及从所述处理室中移除所述多个基板。 该方法还可以包括交替重复第一和第二部分的沉积，直到高k电介质膜具有期望的厚度。 该方法还可以进一步包括预处理基片并在去除之前对其原位进行后处理。

公开(公告)号：US07737051B2

公开(公告)日：2010-06-15

申请号：US10797876

申请日：2004-03-10

申请人： Anthony Dip ,  Pradip K. Roy ,  Sanjeev Kaushal ,  Allen J. Leith ,  Seungho Oh ,  Raymond Joe

发明人： Anthony Dip ,  Pradip K. Roy ,  Sanjeev Kaushal ,  Allen J. Leith ,  Seungho Oh ,  Raymond Joe

IPC分类号： H01L21/36

CPC分类号： H01L21/31604 ,  H01L21/02142 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3185 ,  Y10T29/41

摘要： A method for using a silicon germanium (SiGe) surface layer to integrate a high-k dielectric layer into a semiconductor device. The method forms a SiGe surface layer on a substrate and deposits a high-k dielectric layer on the SiGe surface layer. An oxide layer, located between the high-k dielectric layer and an unreacted portion of the SiGe surface layer, is formed during one or both of deposition of the high-k dielectric layer and an annealing process after deposition of the high-k dielectric layer. The method further includes forming an electrode layer on the high-k dielectric layer.

摘要翻译： 一种使用硅锗（SiGe）表面层将高k电介质层集成到半导体器件中的方法。 该方法在衬底上形成SiGe表面层，并在SiGe表面层上沉积高k电介质层。 在高k电介质层的沉积和沉积高k电介质层之间的退火工艺中的一个或两个期间，形成位于高k电介质层和SiGe表面层的未反应部分之间的氧化物层 。 该方法还包括在高k电介质层上形成电极层。