公开(公告)号：US06806109B2

公开(公告)日：2004-10-19

申请号：US10620432

申请日：2003-07-17

申请人： Hiroyuki Furuya ,  Toshiya Yokogawa ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa

发明人： Hiroyuki Furuya ,  Toshiya Yokogawa ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa

IPC分类号： H01L2100

CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02661 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2304/04 ,  H01S2304/12 ,  Y10S438/977

摘要： On a sapphire base (701), a GaN layer (702) and a substrate separating layer (703) are sequentially deposited, and the GaN layer (702) and the substrate separating layer (703) are processed to have a plurality of ridge stripes (702a) and recess portions (702b). Subsequently, a GaN based semiconductor layer (706) is grown on a C surface (703c) of the substrate separating layer (703) exposed on top of ridge stripes (702a) as seed crystal. The C surface (703c) of the substrate separating layer (703) is irradiated with a laser beam (802) to remove the substrate separating layer (703), thereby separating the GaN based semiconductor layer (706) from the sapphire base (701).

摘要翻译： 在蓝宝石基座（701）上，依次沉积GaN层（702）和衬底分离层（703），并且将GaN层（702）和衬底分离层（703）加工成具有多个脊条 （702a）和凹部（702b）。 接着，在作为晶种的脊条（702a）的顶部的基板分离层（703）的C面（703c）上生长GaN系半导体层（706）。 用激光束（802）照射衬底分离层（703）的C表面（703c）以去除衬底分离层（703），从而将GaN基半导体层（706）与蓝宝石基底（701）分离， 。

公开(公告)号：US06504176B2

公开(公告)日：2003-01-07

申请号：US09824922

申请日：2001-04-03

申请人： Makoto Kitabatake ,  Toshiya Yokogawa ,  Osamu Kusumoto ,  Masao Uchida ,  Kunimasa Takahashi

发明人： Makoto Kitabatake ,  Toshiya Yokogawa ,  Osamu Kusumoto ,  Masao Uchida ,  Kunimasa Takahashi

IPC分类号： H01L310317

CPC分类号： H01L29/0634 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7813

摘要： There are provided a field effect transistor with a high withstand voltage and low loss and a method of manufacturing the same. The field effect transistor includes an n-type substrate, an n-type semiconductor layer formed on the n-type substrate, a p-type semiconductor layer formed on the n-type semiconductor layer, a p-type region embedded in the n-type semiconductor layer, an n-type region embedded in the n-type semiconductor layer and the p-type semiconductor layer, an n-type source region disposed in the p-type semiconductor layer on its surface side, an insulating layer disposed on the p-type semiconductor layer, a gate electrode disposed on the insulating layer, a source electrode, and a drain electrode. The n-type semiconductor layer, the p-type semiconductor layer, and the p-type region are made of wide-gap semiconductors with a bandgap of at least 2 eV, respectively.

摘要翻译： 提供具有高耐受电压和低损耗的场效应晶体管及其制造方法。 场效应晶体管包括n型衬底，形成在n型衬底上的n型半导体层，形成在n型半导体层上的p型半导体层，嵌入在n型衬底中的p型区域， 埋入n型半导体层和p型半导体层的n型区域，在其表面侧配置在p型半导体层中的n型源极区域，设置在p型半导体层上的绝缘层 p型半导体层，设置在绝缘层上的栅电极，源电极和漏电极。 n型半导体层，p型半导体层和p型区域分别由具有至少2eV的带隙的宽间隙半导体制成。

公开(公告)号：US20130214288A1

公开(公告)日：2013-08-22

申请号：US13880027

申请日：2012-05-02

申请人： Toshiya Yokogawa ,  Junko Iwanaga ,  Akira Inoue

发明人： Toshiya Yokogawa ,  Junko Iwanaga ,  Akira Inoue

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

摘要： A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8×10−4≦D≦14.1×10−4. The area of the p-side electrode, S, is in the range of 1×102 μm2≦S≦9×104 μm2. A maximum current density which leads to 88% of a maximum of the external quantum efficiency is not less than 2 A/mm2.

摘要翻译： 实施方式的氮化物系半导体发光元件具有半导体层叠结构，该半导体层叠结构具有作为m面的生长面并由GaN系半导体构成。 半导体多层结构包括n型半导体层，p型半导体层，设置在p型半导体层上的p侧电极以及介于n型半导体层和p型半导体层之间的有源层 半导体层。 有源层的厚度与n型半导体层的厚度D之比在1.8×10 -4 @ D @ 14.1×10 -4的范围内。 p侧电极S的面积在1×102mum2 @ S @ 9×104mum2的范围内。 导致外部量子效率最大值的88％的最大电流密度不小于2A / mm2。

公开(公告)号：US20130146928A1

公开(公告)日：2013-06-13

申请号：US13818167

申请日：2012-03-05

申请人： Akira Inoue ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Masaki Fujikane

发明人： Akira Inoue ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Masaki Fujikane

IPC分类号： H01L33/20

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32 ,  H01L33/54 ,  H01L2224/14 ,  H01L2224/16225

摘要： A nitride semiconductor light-emitting element 300 is a nitride semiconductor light-emitting element which has a multilayer structure 310, the multilayer structure 310 including an active layer which is made of an m-plane nitride semiconductor. The multilayer structure 310 has a light extraction surface 311a which is parallel to an m-plane in the nitride semiconductor active layer 306 and light extraction surfaces 311b which are parallel to a c-plane in the nitride semiconductor active layer 306. The ratio of an area of the light extraction surfaces 311b to an area of the light extraction surface 311a is not more than 46%.

公开(公告)号：US20130126900A1

公开(公告)日：2013-05-23

申请号：US13813693

申请日：2011-08-04

申请人： Akira Inoue ,  Masaki Fujikane ,  Toshiya Yokogawa

发明人： Akira Inoue ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L25/0753 ,  H01L33/16 ,  H01L33/54 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： Around a nitride-based semiconductor light-emitting element which has a polarization characteristic, a transparent encapsulating member which has a cylindrical shape is provided such that the symmetry plane of the cylindrical shape forms an angle of 25° to 65° with respect to the polarization direction of the nitride-based semiconductor light-emitting element.

摘要翻译： 在具有极化特性的氮化物系半导体发光元件周围，设置有圆筒状的透明封装构件，使得圆筒形状的对称面相对于极化形成25°〜65°的角度 氮化物系半导体发光元件的方向。

公开(公告)号：US08441108B2

公开(公告)日：2013-05-14

申请号：US12993305

申请日：2010-03-16

申请人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

发明人： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

IPC分类号： H01L29/04

CPC分类号： H01L33/40 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016

摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的金属层34.Zn层32与p型半导体区域的表面接触 半导体多层结构20。

公开(公告)号：US08421054B2

公开(公告)日：2013-04-16

申请号：US13351452

申请日：2012-01-17

申请人： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

发明人： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

IPC分类号： H01L29/04 ,  H01L29/26

CPC分类号： H01L33/382 ,  H01L33/16 ,  H01L33/32

摘要： A light-emitting diode element includes: an n-type conductive layer 2 being made of a gallium nitride-based compound, a principal surface being an m-plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.

摘要翻译： 发光二极管元件包括：n型导电层2，其由氮化镓基化合物制成，主表面为m面; 设置在n型导电层2的主表面的第一区域2a上的半导体多层结构21，包括p型导电层4和活性层3的半导体多层结构21; 设置在p型导电层4上的p电极5; 设置在n型导电层2的主表面的第二区域2b上的导体部分9，导体部分9与通孔8的内壁接触; 以及设置在n型导电层2的主表面的第二区域2b上的n型正面电极6，n型正面电极6与导体部分9接触。

公开(公告)号：US08222670B2

公开(公告)日：2012-07-17

申请号：US13109213

申请日：2011-05-17

申请人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01S5/0202 ,  H01S5/02272 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202 ,  H01S2304/04

摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

摘要翻译： 根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

公开(公告)号：US08198637B2

公开(公告)日：2012-06-12

申请号：US11872071

申请日：2007-10-15

申请人： Gaku Sugahara ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

发明人： Gaku Sugahara ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

IPC分类号： H01L27/15

CPC分类号： H01S5/227 ,  H01S5/0202 ,  H01S5/0421 ,  H01S5/2205 ,  H01S5/32341

摘要： A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.

摘要翻译： 半导体激光器包括具有在共振腔长度方向上延伸的条纹凸起部分的氮化物半导体衬底，已经限定在氮化物半导体衬底的主表面上并且在选定区域中具有条纹开口的掩模层 条状隆起部分的上表面和氮化物半导体多层结构，其已经在条纹凸起部分的上表面上的选定区域上生长。 氮化物半导体多层结构比掩模层上的氮化物半导体更厚，并且氮化物半导体多层结构的宽度比掩蔽层的条纹开口宽，并且包括在掩模层上横向生长的部分。

公开(公告)号：US20120113656A1

公开(公告)日：2012-05-10

申请号：US13351452

申请日：2012-01-17

申请人： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

发明人： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

IPC分类号： F21V21/00 ,  H01L33/38

CPC分类号： H01L33/382 ,  H01L33/16 ,  H01L33/32

摘要： A light-emitting diode element includes: an n-type conductive layer 2 being made of a gallium nitride-based compound, a principal surface being an m-plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.

摘要翻译： 发光二极管元件包括：n型导电层2，其由氮化镓基化合物制成，主表面为m面; 设置在n型导电层2的主表面的第一区域2a上的半导体多层结构21，包括p型导电层4和活性层3的半导体多层结构21; 设置在p型导电层4上的p电极5; 设置在n型导电层2的主表面的第二区域2b上的导体部分9，导体部分9与通孔8的内壁接触; 以及设置在n型导电层2的主表面的第二区域2b上的n型正面电极6，n型正面电极6与导体部分9接触。