LIGHT EMITTING DEVICE
    42.
    发明申请
    LIGHT EMITTING DEVICE 失效
    发光装置

    公开(公告)号:US20110291149A1

    公开(公告)日:2011-12-01

    申请号:US12885721

    申请日:2010-09-20

    IPC分类号: H01L33/48

    摘要: According to one embodiment, a light emitting device includes a light emitting chip, an external terminal made of a metal material, and a circuit board. The light emitting chip is mounted on the circuit board via the external terminal. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer. The circuit board includes an interconnection bonded to the first metal pillar and the second metal pillar via the external terminal, and a heat radiation material provided on an opposite side of the interconnection and connected to the interconnection.

    摘要翻译: 根据一个实施例,发光器件包括发光芯片,由金属材料制成的外部端子和电路板。 发光芯片通过外部端子安装在电路板上。 发光芯片包括半导体层,第一电极,第二电极,绝缘层,第一互连层,第二互连层,第一金属柱,第二金属柱和树脂层。 电路板包括经由外部端子与第一金属柱和第二金属柱接合的互连以及设置在互连的相对侧并连接到互连的散热材料。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    43.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20110220910A1

    公开(公告)日:2011-09-15

    申请号:US12793943

    申请日:2010-06-04

    摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a barrier metal layer, a first metal pillar, a second metal pillar, and a resin. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on the second major surface of the semiconductor layer and includes a silver layer. The insulating film is provided on the second major surface side of the semiconductor layer. The barrier metal layer is provided between the second electrode and the insulating film and between the second electrode and the second interconnection to cover the second electrode.

    摘要翻译: 根据一个实施例,半导体发光器件包括半导体层,第一电极,第二电极,绝缘膜,第一互连,第二互连,阻挡金属层,第一金属柱,第二金属柱, 和树脂。 半导体层具有第一主表面,与第一主表面相反的一侧形成的第二主表面和发光层。 第一电极设置在半导体层的第二主表面上。 第二电极设置在半导体层的第二主表面上并且包括银层。 绝缘膜设置在半导体层的第二主表面侧。 阻挡金属层设置在第二电极和绝缘膜之间以及第二电极和第二互连之间以覆盖第二电极。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    44.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20110114978A1

    公开(公告)日:2011-05-19

    申请号:US12728846

    申请日:2010-03-22

    IPC分类号: H01L33/40 H01L31/0256

    摘要: A semiconductor light-emitting device includes: a first semiconductor layer having a first major surface, a second major surface which is an opposite side from the first major surface, and a side surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer; electrodes provided on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer; an insulating layer having a first surface formed on the second major surface side of the first semiconductor layer and a second surface which is an opposite side from the first surface; an external terminal which is a conductor provided on the second surface side of the insulating layer; and a phosphor layer provided on the first major surface of the first semiconductor layer and on a portion of the first surface of the insulating layer, the portion being adjacent to the side surface of the first semiconductor layer.

    摘要翻译: 一种半导体发光器件,包括:具有第一主表面的第一半导体层,与第一主表面相对的第二主表面和侧表面; 第二半导体层,设置在第一半导体层的第二主表面上并且包括发光层; 设置在第一半导体层的第二主表面上的第二半导体层的与第一半导体层相反一侧的表面上的电极; 绝缘层,其具有形成在所述第一半导体层的所述第二主表面侧上的第一表面和与所述第一表面相反的第二表面; 外部端子,其是设置在绝缘层的第二表面侧上的导体; 以及设置在所述第一半导体层的所述第一主表面上和所述绝缘层的所述第一表面的一部分上的磷光体层,所述部分与所述第一半导体层的侧表面相邻。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    45.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号:US20130285091A1

    公开(公告)日:2013-10-31

    申请号:US13599892

    申请日:2012-08-30

    IPC分类号: H01L33/50

    摘要: According to an embodiment, a method for manufacturing a semiconductor light emitting device includes steps for forming a fluorescent substance layer on a first face of a semiconductor layer and forming a light shielding film on the side face of the fluorescent substance layer. The fluorescent substance layer includes a resin and fluorescent substances dispersed in the resin, and have a light emitting face on a side opposite to the first face of the semiconductor layer and a side face connecting to the light emitting face with an angle of 90 degree or more between the light emitting face and the side face. The light shielding film shields a light emitted from a light emitting layer included in the semiconductor layer and a light radiated from the fluorescent substances.

    摘要翻译: 根据实施例,半导体发光器件的制造方法包括在半导体层的第一面上形成荧光体层并在荧光物质层的侧面形成遮光膜的工序。 荧光物质层包括分散在树脂中的树脂和荧光物质,并且在与半导体层的第一面相反的一侧具有发光面,以及以90度的角连接到发光面的侧面, 更多地在发光面和侧面之间。 遮光膜屏蔽从半导体层中包含的发光层发射的光和从荧光物质辐射的光。

    Light emitting device
    47.
    发明授权
    Light emitting device 失效
    发光装置

    公开(公告)号:US08378377B2

    公开(公告)日:2013-02-19

    申请号:US12885721

    申请日:2010-09-20

    IPC分类号: H01L33/00

    摘要: According to one embodiment, a light emitting device includes a light emitting chip, an external terminal made of a metal material, and a circuit board. The light emitting chip is mounted on the circuit board via the external terminal. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer. The circuit board includes an interconnection bonded to the first metal pillar and the second metal pillar via the external terminal, and a heat radiation material provided on an opposite side of the interconnection and connected to the interconnection.

    摘要翻译: 根据一个实施例,发光器件包括发光芯片,由金属材料制成的外部端子和电路板。 发光芯片通过外部端子安装在电路板上。 发光芯片包括半导体层,第一电极,第二电极,绝缘层,第一互连层,第二互连层,第一金属柱,第二金属柱和树脂层。 电路板包括经由外部端子与第一金属柱和第二金属柱接合的互连以及设置在互连的相对侧并连接到互连的散热材料。

    Method for manufacturing light emitting device and light emitting device
    48.
    发明授权
    Method for manufacturing light emitting device and light emitting device 失效
    制造发光器件和发光器件的方法

    公开(公告)号:US08377726B2

    公开(公告)日:2013-02-19

    申请号:US12832275

    申请日:2010-07-08

    IPC分类号: H01L21/66

    摘要: According to one embodiment, a light emitting device includes a stacked body, a p-side and n-side electrodes, an insulating film, a p-side extraction electrode, an n-side extraction electrode, a resin layer and a phosphor layer. The stacked body has a first and a second surface opposite to each other and includes a light emitting layer. A p-side and an n-side electrode are provided on the second surface. An insulating film has openings to which the p-side and n-side electrodes are exposed. A p-side extraction electrode includes a p-side seed metal and a p-side metal wiring layer. An n-side extraction electrode includes an n-side seed metal and an n-side metal wiring layer. A resin layer is filled around the p-side and n-side extraction electrodes, and a phosphor layer is provided on a side of the first surface. Emission light from the light emitting layer is emitted through the first surface.

    摘要翻译: 根据一个实施例,发光器件包括层叠体,p侧和n侧电极,绝缘膜,p侧引出电极,n侧引出电极,树脂层和荧光体层。 层叠体具有彼此相对的第一和第二表面,并且包括发光层。 p侧和n侧电极设置在第二表面上。 绝缘膜具有露出p侧和n侧电极的开口。 p侧引出电极包括p侧金属和p侧金属配线层。 n侧引出电极包括n侧籽晶和n侧金属布线层。 在p侧和n侧引出电极周围填充有树脂层,在第一面的一侧设置有荧光体层。 来自发光层的发射光通过第一表面发射。