公开(公告)号：US12027466B2

公开(公告)日：2024-07-02

申请号：US17026703

申请日：2020-09-21

Applicant: Intel Corporation

Inventor： Jeremy D. Ecton ,  Aleksandar Aleksov ,  Brandon C. Marin ,  Yonggang Li ,  Leonel Arana ,  Suddhasattwa Nad ,  Haobo Chen ,  Tarek Ibrahim

IPC: H01L23/538 ,  H01L21/768 ,  H05K1/11

CPC classification number: H01L23/5386 ,  H01L21/76838 ,  H01L23/5385 ,  H05K1/11

Abstract: Conductive routes for an electronic substrate may be fabricated by forming an opening in a material, using existing laser drilling or lithography tools and materials, followed by selectively plating a metal on the sidewalls of the opening. The processes of the present description may result in significantly higher patterning resolution or feature scaling (up to 2× improvement in patterning density/resolution). In addition to improved patterning resolution, the embodiments of the present description may also result in higher aspect ratios of the conductive routes, which can result in improved signaling, reduced latency, and improved yield.

公开(公告)号：US20240203853A1

公开(公告)日：2024-06-20

申请号：US18085281

申请日：2022-12-20

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Hongxia Feng ,  Julianne Troiano ,  Dingying Xu ,  Matthew Tingey ,  Xiaoying Guo ,  Srinivas Venkata Ramanuja Pietambaram ,  Bai Nie ,  Gang Duan ,  Bin Mu ,  Kyle Mcelhinny ,  Ashay A. Dani ,  Leonel R. Arana

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/538

CPC classification number: H01L23/49827 ,  H01L21/4846 ,  H01L23/5384

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device can include a substrate, a via, a build-up layer, a top layer, and one or more dies. The substrate can include a conductor coating. The via can be connected to the conductor coating. The build-up layer can be on the substrate. The build-up layer can define a channel that the via is formed within and insulate the via during operation of the electronic device. The top layer can be interproximal to the substrate and the via. The one or more dies can be connected to the via.

公开(公告)号：US20240186250A1

公开(公告)日：2024-06-06

申请号：US18061188

申请日：2022-12-02

Applicant: Intel Corporation

Inventor： Jeremy D. Ecton ,  Brandon Christian Marin ,  Srinivas V. Pietambaram ,  Tarek A. Ibrahim ,  Suddhasattwa Nad ,  Gang Duan ,  Haobo Chen ,  Hiroki Tanaka

IPC: H01L23/538 ,  H01L21/48

CPC classification number: H01L23/5381 ,  H01L21/486 ,  H01L23/5384 ,  H01L23/5386

Abstract: A microelectronic assembly includes a substrate comprising: a panel including glass and defining an opening therein; an interconnect bridge (IB) in the opening and including interconnect pathways and IB through vias (IBTVs); and electrically conductive structures at a lower surface of the substrate to electrically couple the substrate to another component, at least some of the electrically conductive structures coupled to the IBTVs to form respective vertical electrical connections between the lower surface of the substrate and an upper surface of the substrate; and an electronic component (EC) layer on the upper surface of the substrate, the EC layer including a first active EC (AEC) and a second AEC electrically coupled to one another through the interconnect pathways, at least one of the first AEC or the second AECs further electrically coupled to one or more of the at least some of the electrically conductive structures.

公开(公告)号：US20240162157A1

公开(公告)日：2024-05-16

申请号：US17988051

申请日：2022-11-16

Applicant: Intel Corporation

Inventor： Jeremy D. Ecton ,  Brandon Christian Marin ,  Aleksandar Aleksov ,  Srinivas V. Pietambaram ,  Haobo Chen

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/15 ,  H01L23/498

CPC classification number: H01L23/5386 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5385 ,  H01L25/0655

Abstract: A bumpless hybrid organic glass interposer. One or more high density pattern (HDP) routing layers are placed on a functional, thin, carrier, separate from the intended organic substrate patch or package. The HDP layer(s) is/are then attached to the substrate package. The interposers achieve electrical connections between the HDP layer and underlying routing layer of the substrate package by utilizing a self-align dry etch process through landing pads connected to the HDP routing.

公开(公告)号：US11923312B2

公开(公告)日：2024-03-05

申请号：US16366661

申请日：2019-03-27

Applicant: Intel Corporation

Inventor： Bai Nie ,  Gang Duan ,  Srinivas Pietambaram ,  Jesse Jones ,  Yosuke Kanaoka ,  Hongxia Feng ,  Dingying Xu ,  Rahul Manepalli ,  Sameer Paital ,  Kristof Darmawikarta ,  Yonggang Li ,  Meizi Jiao ,  Chong Zhang ,  Matthew Tingey ,  Jung Kyu Han ,  Haobo Chen

IPC: H01L23/538 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31

CPC classification number: H01L23/5389 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/5381 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/562 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/214 ,  H01L2924/3511 ,  H01L2924/381

Abstract: A die assembly is disclosed. The die assembly includes a die, one or more die pads on a first surface of the die and a die attach film on the die where the die attach film includes one or more openings that expose the one or more die pads and that extend to one or more edges of the die.

公开(公告)号：US11837534B2

公开(公告)日：2023-12-05

申请号：US15859309

申请日：2017-12-29

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Kristof Darmawikarta ,  Haobo Chen ,  Changhua Liu ,  Sri Ranga Sai Boyapati ,  Bai Nie

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49838 ,  H01L21/4857 ,  H01L23/49822

Abstract: Apparatuses, systems and methods associated with package substrate design with variable height conductive elements within a single layer are disclosed herein. In embodiments, a substrate may include a first layer, wherein a trench is located in the first layer, and a second layer located on a surface of the first layer. The substrate may further include a first conductive element located in a first portion of the second layer adjacent to the trench, wherein the first conductive element extends to fill the trench, and a second conductive element located in a second portion of the second layer, wherein the second conductive element is located on the surface of the first layer. Other embodiments may be described and/or claimed.

公开(公告)号：US20230197679A1

公开(公告)日：2023-06-22

申请号：US17558457

申请日：2021-12-21

Applicant: Intel Corporation

Inventor： Jeremy Ecton ,  Jason M. Gamba ,  Brandon C. Marin ,  Srinivas V. Pietambaram ,  Xiaoxuan Sun ,  Omkar G. Karhade ,  Xavier Francois Brun ,  Yonggang Li ,  Suddhasattwa Nad ,  Bohan Shan ,  Haobo Chen ,  Gang Duan

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/538

CPC classification number: H01L25/0652 ,  H01L24/16 ,  H01L24/14 ,  H01L24/73 ,  H01L24/13 ,  H01L23/5383 ,  H01L2224/16227 ,  H01L2224/14177 ,  H01L2224/73204 ,  H01L2224/13111 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01031

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface, in a first layer; a redistribution layer (RDL) on the first layer, wherein the RDL includes conductive vias having a greater width towards a first surface of the RDL and a smaller width towards an opposing second surface of the RDL; wherein the first surface of the RDL is electrically coupled to the second surface of the first die by first solder interconnects having a first solder; and a second die in a second layer on the RDL, wherein the second die is electrically coupled to the RDL by second solder interconnects having a second solder, wherein the second solder is different than the first solder.