公开(公告)号：US06314819B1

公开(公告)日：2001-11-13

申请号：US09588004

申请日：2000-06-06

申请人： Asao Nishimura ,  Naotaka Tanaka ,  Isao Hirose

发明人： Asao Nishimura ,  Naotaka Tanaka ,  Isao Hirose

IPC分类号： G01N324

CPC分类号： G01N3/24 ,  G01N19/04 ,  G01N2203/0066 ,  G01N2203/0091

摘要： A method for measuring an adhesion strength of a resin material which is capable of accurately and readily measuring a universal adhesion strength independent of dimensions and shapes of specimen. A delamination portion is partially formed between a resin and an adherend material. Loads in two different directions are applied to an adhering interface such that opposed shear stresses are generated. As a result, a true adhering strength can be obtained from an apparent delamination propagating strength in each case.

摘要翻译： 用于测量树脂材料的粘合强度的方法，其能够准确且容易地测量与样品的尺寸和形状无关的通用粘合强度。 在树脂和被粘物之间部分形成分层部分。 将两个不同方向的载荷施加到粘附界面，从而产生相对的剪切应力。 结果，可以从每种情况下的明显的分层传播强度获得真正的粘合强度。

公开(公告)号：US06297073B1

公开(公告)日：2001-10-02

申请号：US09547937

申请日：2000-04-11

申请人： Makoto Kitano ,  Ryuji Kohno ,  Naotaka Tanaka ,  Akihiro Yaguchi ,  Tetsuo Kumazawa ,  Ichiro Anjoh ,  Hideki Tanaka ,  Asao Nishimura ,  Shuji Eguchi ,  Akira Nagai ,  Mamoru Mita

发明人： Makoto Kitano ,  Ryuji Kohno ,  Naotaka Tanaka ,  Akihiro Yaguchi ,  Tetsuo Kumazawa ,  Ichiro Anjoh ,  Hideki Tanaka ,  Asao Nishimura ,  Shuji Eguchi ,  Akira Nagai ,  Mamoru Mita

IPC分类号： H01L21283

CPC分类号： H01L24/50 ,  H01L23/3114 ,  H01L23/49572 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/15787 ,  H01L2924/00

摘要： A semiconductor device, is provided will semiconductor chips having a plurality of electrodes for external connection, elastomer resin portions formed of an elastomer resin, which are bonded to the semiconductor chip excepting at least some of the plurality of electrodes, a tape layer of resin including tape wiring patterns on the surface thereof, a plurality of solder bumps for bonding the printed wiring pattern to the tape wiring patterns, leads for connecting the plurality of electrodes of the semiconductor chips to the tape wiring patterns, and seal resin for covering the leads and the plurality of electrodes which are connected by the leads. The elastomer resin has a modulus of transverse elasticity not less than 50 MPa and not more than 750 MPa.

摘要翻译： 提供一种半导体器件，具有多个用于外部连接的电极的半导体芯片，除弹性体树脂形成的弹性体树脂部分，其除了多个电极中的至少一些外部结合到半导体芯片，包括树脂的带层，包括 表面上的带状布线图案，用于将印刷布线图案接合到带布线图案的多个焊料凸块，用于将半导体芯片的多个电极连接到带布线图案的引线，以及密封用于覆盖引线的树脂， 由引线连接的多个电极。 弹性体树脂的横向弹性模量不小于50MPa且不大于750MPa。

公开(公告)号：US06232653B1

公开(公告)日：2001-05-15

申请号：US09270500

申请日：1999-03-17

申请人： Naotaka Tanaka ,  Akihiro Yaguchi ,  Ryuji Kohno ,  Kiyomi Kojima ,  Takeshi Terasaki ,  Hideo Miura ,  Junichi Arita ,  Chikako Imura

发明人： Naotaka Tanaka ,  Akihiro Yaguchi ,  Ryuji Kohno ,  Kiyomi Kojima ,  Takeshi Terasaki ,  Hideo Miura ,  Junichi Arita ,  Chikako Imura

IPC分类号： H01L2348

CPC分类号： H01L23/4951 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/92147 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/05599

摘要： A TSOP type semiconductor device having a LOC structure employing a copper (alloy) type frame prevents resin cracks that occur in a reliability test such as a temperature cycle test. The TSOP type semiconductor device has narrower common inner leads where a resin crack would be likely to occur first, and has a thinner chip.

摘要翻译： 具有采用铜（合金）型框架的LOC结构的TSOP型半导体器件防止了在诸如温度循环测试的可靠性测试中发生的树脂裂纹。 TSOP型半导体器件具有较窄的公共内引线，其中首先可能发生树脂裂纹，并且具有更薄的芯片。

公开(公告)号：US06070473A

公开(公告)日：2000-06-06

申请号：US900012

申请日：1997-07-24

申请人： Asao Nishimura ,  Naotaka Tanaka ,  Isao Hirose

发明人： Asao Nishimura ,  Naotaka Tanaka ,  Isao Hirose

IPC分类号： G01N3/00 ,  G01N3/24 ,  G01N19/04

CPC分类号： G01N3/24 ,  G01N19/04 ,  G01N2203/0066 ,  G01N2203/0091

摘要： A method for measuring an adhesion strength of a resin material which is capable of accurately and readily measuring a universal adhesion strength independent of dimensions and shapes of specimen. A delamination portion is partially formed between a resin and an adherend material. Loads in two different directions are applied to an adhering interface such that opposed shear stresses are generated. As a result, a true adhering strength can be obtained from an apparent delamination propagating strength in each case.

摘要翻译： 用于测量树脂材料的粘合强度的方法，其能够准确且容易地测量与样品的尺寸和形状无关的通用粘合强度。 在树脂和被粘物之间部分形成分层部分。 将两个不同方向的载荷施加到粘附界面，从而产生相对的剪切应力。 结果，可以从每种情况下的明显的分层传播强度获得真正的粘合强度。

公开(公告)号：US5359899A

公开(公告)日：1994-11-01

申请号：US62543

申请日：1993-05-18

申请人： Asao Nishimura ,  Naotaka Tanaka ,  Isao Hirose

发明人： Asao Nishimura ,  Naotaka Tanaka ,  Isao Hirose

IPC分类号： G01N3/00 ,  G01N3/24 ,  G01N19/04

CPC分类号： G01N3/24 ,  G01N19/04 ,  G01N2203/0066 ,  G01N2203/0091

摘要： A method for measuring an adhesion strength of a resin material which is capable of accurately and readily measuring a universal adhesion strength independent of dimensions and shapes of specimen. A delamination portion is partially formed between a resin and an adherend material. Loads in two different directions are applied to an adhering interface such that opposed shear stresses are generated. As a result, a true adhering strength can be obtained from an apparent delamination propagating strength in each case.

摘要翻译： 用于测量树脂材料的粘合强度的方法，其能够准确且容易地测量与样品的尺寸和形状无关的通用粘合强度。 在树脂和被粘物之间部分形成分层部分。 将两个不同方向的载荷施加到粘附界面，从而产生相对的剪切应力。 结果，可以从每种情况下的明显的分层传播强度获得真正的粘合强度。

公开(公告)号：US08324736B2

公开(公告)日：2012-12-04

申请号：US13153860

申请日：2011-06-06

申请人： Michihiro Kawashita ,  Yasuhiro Yoshimura ,  Naotaka Tanaka ,  Takahiro Naito ,  Takashi Akazawa

发明人： Michihiro Kawashita ,  Yasuhiro Yoshimura ,  Naotaka Tanaka ,  Takahiro Naito ,  Takashi Akazawa

IPC分类号： H01L23/528

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L24/05 ,  H01L24/90 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05553 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/1134 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/90 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A through silicon via reaching a pad from a second surface of a semiconductor substrate is formed. A penetration space in the through silicon via is formed of a first hole and a second hole with a diameter smaller than that of the first hole. The first hole is formed from the second surface of the semiconductor substrate to the middle of the interlayer insulating film. Further, the second hole reaching the pad from the bottom of the first hole is formed. Then, the interlayer insulating film formed on the first surface of the semiconductor substrate has a step shape reflecting a step difference between the bottom surface of the first hole and the first surface of the semiconductor substrate. More specifically, the thickness of the interlayer insulating film between the bottom surface of the first hole and the pad is smaller than that in other portions.

摘要翻译： 形成从半导体衬底的第二表面到达焊盘的通硅。 贯穿硅通孔中的穿透空间由直径小于第一孔直径的第一孔和第二孔形成。 第一孔由半导体衬底的第二表面到层间绝缘膜的中间形成。 此外，形成从第一孔的底部到达垫的第二孔。 然后，形成在半导体衬底的第一表面上的层间绝缘膜具有反映第一孔的底表面和半导体衬底的第一表面之间的台阶差的台阶形状。 更具体地说，第一孔的底表面和垫之间的层间绝缘膜的厚度小于其它部分的厚度。

公开(公告)号：US20120048332A1

公开(公告)日：2012-03-01

申请号：US13217666

申请日：2011-08-25

申请人： Shigenori Shimizu ,  Hiroyuki Izawa ,  Keisuke Ookubo ,  Shigeaki Funyu ,  Yutaka Okada ,  Keiko Funyu ,  Naotaka Tanaka

发明人： Shigenori Shimizu ,  Hiroyuki Izawa ,  Keisuke Ookubo ,  Shigeaki Funyu ,  Yutaka Okada ,  Keiko Funyu ,  Naotaka Tanaka

IPC分类号： H01L31/05 ,  H01L31/18 ,  C09J133/00 ,  C09J163/02 ,  C09J171/10

CPC分类号： C08L7/00 ,  C08L33/00 ,  C08L71/12 ,  C09J163/00 ,  H01L31/022425 ,  H01L31/0504 ,  Y02E10/50

摘要： There are provided an adhesive film for a solar cell electrode providing a solar cell capable of reducing adverse effects on photovoltaic cells caused by heating or pressure and having sufficient solar cell characteristics, and a method for manufacturing a solar cell module using the same. The adhesive film for a solar cell electrode is an adhesive film used for electrical connection between photovoltaic cell surface electrodes and wiring members, wherein the adhesive film contains a crystalline epoxy resin, a curing agent and a film forming material.

摘要翻译： 提供了一种用于太阳能电池电极的粘合膜，其提供能够减少由加热或压力引起的并且具有足够的太阳能电池特性的对光伏电池的不利影响的太阳能电池，以及使用该太阳能电池的太阳能电池模块的制造方法。 用于太阳能电池电极的粘合膜是用于光伏电池表面电极和布线构件之间的电连接的粘合膜，其中粘合剂膜含有结晶环氧树脂，固化剂和成膜材料。

公开(公告)号：US07973415B2

公开(公告)日：2011-07-05

申请号：US12133828

申请日：2008-06-05

申请人： Michihiro Kawashita ,  Yasuhiro Yoshimura ,  Naotaka Tanaka ,  Takahiro Naito ,  Takashi Akazawa

发明人： Michihiro Kawashita ,  Yasuhiro Yoshimura ,  Naotaka Tanaka ,  Takahiro Naito ,  Takashi Akazawa

IPC分类号： H01L29/41

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L24/05 ,  H01L24/90 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05553 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/1134 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/90 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A through silicon via reaching a pad from a second surface of a semiconductor substrate is formed. A penetration space in the through silicon via is formed of a first hole and a second hole with a diameter smaller than that of the first hole. The first hole is formed from the second surface of the semiconductor substrate to the middle of the interlayer insulating film. Further, the second hole reaching the pad from the bottom of the first hole is formed. Then, the interlayer insulating film formed on the first surface of the semiconductor substrate has a step shape reflecting a step difference between the bottom surface of the first hole and the first surface of the semiconductor substrate. More specifically, the thickness of the interlayer insulating film between the bottom surface of the first hole and the pad is smaller than that in other portions.

摘要翻译： 形成从半导体衬底的第二表面到达焊盘的通硅。 贯穿硅通孔中的穿透空间由直径小于第一孔直径的第一孔和第二孔形成。 第一孔由半导体衬底的第二表面到层间绝缘膜的中间形成。 此外，形成从第一孔的底部到达垫的第二孔。 然后，形成在半导体衬底的第一表面上的层间绝缘膜具有反映第一孔的底表面和半导体衬底的第一表面之间的台阶差的台阶形状。 更具体地说，第一孔的底表面和垫之间的层间绝缘膜的厚度小于其他部分的厚度。

公开(公告)号：US07897509B2

公开(公告)日：2011-03-01

申请号：US12823913

申请日：2010-06-25

申请人： Naotaka Tanaka ,  Kenji Kanemitsu ,  Takafumi Kikuchi ,  Takashi Akazawa

发明人： Naotaka Tanaka ,  Kenji Kanemitsu ,  Takafumi Kikuchi ,  Takashi Akazawa

IPC分类号： H01L21/4763

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/90 ,  H01L2224/0554 ,  H01L2224/05556 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13144 ,  H01L2224/16237 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.

摘要翻译： 一种半导体晶片，包括：在形成晶片的通孔电极的位置处形成的管状沟槽; 绝缘构件，其被埋置在所述沟槽内部和所述沟槽的上表面上; 形成在所述绝缘构件的上表面上的栅电极膜和金属膜; 形成在金属膜的上表面上的多层柱状布线孔; 以及通过多层柱状布线通孔与金属膜电连接形成的外部连接电极。 以这种方式，在薄晶片和设备开发之后，不需要具有干法蚀刻的新工艺来形成通孔电极。 此外，引入特定设计可以形成通孔电极，同时显着降低了各个工艺的难度。

公开(公告)号：US07759161B2

公开(公告)日：2010-07-20

申请号：US11341005

申请日：2006-01-27

申请人： Naotaka Tanaka ,  Yasuhiro Yoshimura ,  Takahiro Naito ,  Takashi Akazawa

发明人： Naotaka Tanaka ,  Yasuhiro Yoshimura ,  Takahiro Naito ,  Takashi Akazawa

IPC分类号： H01L21/00

CPC分类号： H01L24/97 ,  H01L23/481 ,  H01L23/5226 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/1134 ,  H01L2224/13012 ,  H01L2224/16147 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/73204 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/81898 ,  H01L2224/83192 ,  H01L2224/97 ,  H01L2225/0652 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06572 ,  H01L2225/06579 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2924/00012

摘要： In order to implement a high-density high-performance semiconductor system small in size, there is provided a method for implementing three-dimensional connection between a plurality of semiconductor chips differing from each other with the shortest metal interconnect length, using penetration electrodes, thereby enabling a fast operation at a low noise level, the method being a three-dimensional connection method very low in cost, and short in TAT in comparison with the known example, capable of bonding at an ordinary temperature, and excellent in connection reliability.

摘要翻译： 为了实现小尺寸的高密度高性能半导体系统，提供了一种使用穿透电极在金属互连长度最短的多个半导体芯片之间实现三维连接的方法，从而 能够以低噪声水平进行快速操作，该方法是成本高的三维连接方法，并且与已知示例相比能够在常温下结合并且连接可靠性优异的TAT较短。