公开(公告)号：US07402509B2

公开(公告)日：2008-07-22

申请号：US11081187

申请日：2005-03-16

申请人： Mauro J. Kobrinsky ,  Jun He ,  Kevin O'Brien ,  Patrick Morrow ,  Ying Zhou ,  Shriram Ramanathan

发明人： Mauro J. Kobrinsky ,  Jun He ,  Kevin O'Brien ,  Patrick Morrow ,  Ying Zhou ,  Shriram Ramanathan

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L21/76867 ,  B23K35/302 ,  H01L21/76852 ,  H01L21/76885 ,  H01L21/76886 ,  H01L21/76888 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05547 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2224/48 ,  H01L2924/013

摘要： A method of forming self-passivating interconnects. At least one of two mating bond structures is formed, at least in part, from an alloy of a first metal and a second metal (or other element). The second metal is capable of migrating through the first metal to free surfaces of the mating bond structures. During bonding, the two mating bond structures are bonded together to form an interconnect, and the second metal segregates to free surfaces of this interconnect to form a passivation layer. Other embodiments are described and claimed.

摘要翻译： 一种形成自钝化互连的方法。 至少部分地由第一金属和第二金属（或其它元素）的合金形成两个匹配结合结构中的至少一个。 第二金属能够通过第一金属迁移到配合结合结构的自由表面。 在接合期间，两个配对结合结构结合在一起以形成互连，并且第二金属分离到该互连的自由表面以形成钝化层。 描述和要求保护其他实施例。

公开(公告)号：US20070170060A1

公开(公告)日：2007-07-26

申请号：US11655423

申请日：2007-01-19

申请人： William Bourcier ,  Roger Aines ,  Jeffery Haslam ,  Charlene Schaldach ,  Kevin O'Brien ,  Edward Cussler

发明人： William Bourcier ,  Roger Aines ,  Jeffery Haslam ,  Charlene Schaldach ,  Kevin O'Brien ,  Edward Cussler

IPC分类号： B01D61/42

CPC分类号： C02F1/4691 ,  B01D61/422 ,  B01D61/44 ,  B01D2311/2603 ,  B01D2313/48 ,  C02F1/4604 ,  C02F2001/46152 ,  C02F2103/08 ,  C02F2201/4611 ,  C02F2201/46125 ,  C02F2201/46145 ,  C02F2201/46175 ,  Y02A20/134

摘要： The present invention provides a new method and apparatus/system for purifying ionic solutions, such as, for example, desalinating water, using engineered charged surfaces to sorb ions from such solutions. Surface charge is applied externally, and is synchronized with oscillatory fluid movements between substantially parallel charged plates. Ions are held in place during fluid movement in one direction (because they are held in the electrical double layer), and released for transport during fluid movement in the opposite direction by removing the applied electric field. In this way the ions, such as salt, are “ratcheted” across the charged surface from the feed side to the concentrate side. The process itself is very simple and involves only pumps, charged surfaces, and manifolds for fluid collection.

摘要翻译： 本发明提供了一种用于纯化离子溶液的新方法和装置/系统，例如使用脱盐水，使用工程化的带电表面从这种溶液中吸附离子。 表面电荷在外部施加，并与基本上平行的带电板之间的振荡流体运动同步。 离子在一个方向的流体运动期间保持就位（因为它们保持在电双层中），并且通过去除所施加的电场在相反方向上的流体运动期间释放以便运输。 以这种方式，诸如盐的离子从进料侧到浓缩物侧被带电表面“棘轮”。 该过程本身非常简单，仅涉及泵，带电表面和歧管以进行流体收集。

公开(公告)号：US20070085162A1

公开(公告)日：2007-04-19

申请号：US11469263

申请日：2006-08-31

申请人： Kevin O'Brien ,  Justin Brask

发明人： Kevin O'Brien ,  Justin Brask

IPC分类号： B05C3/00 ,  H01L29/00

CPC分类号： H01L21/76849 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1666 ,  C23C18/31 ,  H01L21/288

摘要： Capping of copper structures in hydrophobic interlayer dielectric layer, using aqueous electro-less bath is described herein.

摘要翻译： 本文描述了使用水性无电极浴来疏水层间介电层中铜结构的封盖。

公开(公告)号：US20060255432A1

公开(公告)日：2006-11-16

申请号：US11485078

申请日：2006-07-12

申请人： Robert Meagley ,  Kevin O'Brien ,  Tian-An Chen ,  Michael Goodner ,  James Powers ,  Huey-Chiang Liou

发明人： Robert Meagley ,  Kevin O'Brien ,  Tian-An Chen ,  Michael Goodner ,  James Powers ,  Huey-Chiang Liou

IPC分类号： H01L23/58

CPC分类号： H01L23/5222 ,  H01L21/02118 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/312 ,  H01L21/76224 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.

公开(公告)号：US20060251870A1

公开(公告)日：2006-11-09

申请号：US11120870

申请日：2005-05-03

申请人： Kevin O'Brien ,  Frederic Taillan

发明人： Kevin O'Brien ,  Frederic Taillan

IPC分类号： B32B3/00

CPC分类号： B44C5/0476 ,  Y10T428/24372 ,  Y10T428/24802 ,  Y10T428/24876 ,  Y10T428/24942 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/31942

摘要： A decorative laminate having improved scratch and abrasion resistance is provided. In one embodiment, the decorate laminate includes a substrate or core, a decorative sheet on the substrate, and an overlay sheet on the decorative sheet. The overlay sheet is coated on both major surfaces to provide scratch and abrasion resistance to the laminate. The coating on the interior facing surface contains mineral particles having a particle size of from between about 10-30 microns. The coating on the exterior facing surface contains a mixture of first mineral particles having a particle size of from between about 3-8 microns and second mineral particles having a particle size of less than about 1.0 micron. The first mineral particles are preferably alumina particles, and the second mineral particles are preferably sol gel process alumina particles.

摘要翻译： 提供了具有改善的耐刮擦和耐磨性的装饰层压板。 在一个实施例中，装饰层压板包括基底或芯，衬底上的装饰片和装饰片上的覆盖片。 覆盖片材涂覆在两个主表面上，以提供对层压板的耐刮擦和耐磨性。 面向内表面上的涂层含有粒度为约10-30微米的矿物颗粒。 面向外表面上的涂层含有粒度为约3-8微米的第一矿物颗粒和粒度小于约1.0微米的第二矿物颗粒的混合物。 第一矿物颗粒优选为氧化铝颗粒，并且第二矿物颗粒优选为溶胶凝胶法氧化铝颗粒。

公开(公告)号：US20060112626A1

公开(公告)日：2006-06-01

申请号：US10987400

申请日：2004-11-12

申请人： Mimi Liu ,  Kevin O'Brien ,  Mark Ensworth

发明人： Mimi Liu ,  Kevin O'Brien ,  Mark Ensworth

IPC分类号： A01G29/00

CPC分类号： A01G25/06

摘要： A watering device for providing water to a sub-surface level is provided. The watering device includes a body portion for distributing water radially therefrom and along its length. The watering device includes an irrigation assembly for emitting water from a water source, the irrigation assembly emitting the water within the watering device, and the water then being distributed through the body portion to surrounding soil. The irrigation assembly may be supported by the body portion. The irrigation assembly may include a bubbler, and may include a check valve. The device may include a top cap including retaining structure for providing a generally vertical or other desired orientation to the irrigation assembly. The device may further include a bottom cap that generally restricts the flow of water out of the bottom of the device and cooperates with body portion to direct water radially from the device.

摘要翻译： 提供了一种用于向亚表面水平提供水的浇水装置。 浇水装置包括用于沿其长度沿径向分配水的主体部分。 浇水装置包括一个用于从水源排出水的冲洗组件，该冲洗组件将浇水装置内的水排放出来，然后将水通过主体部分分配给周围的土壤。 灌注组件可以由主体部分支撑。 灌溉组件可以包括起泡器，并且可以包括止回阀。 该装置可以包括顶盖，其包括保持结构，用于向冲洗组件提供大致垂直或其它期望的取向。 该装置还可包括底盖，该底盖通常限制水流出设备的底部，并与主体部分配合以将水从该装置径向引导。

公开(公告)号：US20050227488A1

公开(公告)日：2005-10-13

申请号：US10814592

申请日：2004-03-31

申请人： Kevin O'Brien ,  Justin Brask

发明人： Kevin O'Brien ,  Justin Brask

IPC分类号： C23C18/16 ,  C23C18/31 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76849 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1666 ,  C23C18/31 ,  H01L21/288

摘要： Capping of copper structures in hydrophobic interlayer dielectric layer, using aqueous electro-less bath is described herein.

摘要翻译： 本文描述了使用水性无电极浴来疏水层间介电层中铜结构的封盖。

公开(公告)号：US20050106886A1

公开(公告)日：2005-05-19

申请号：US10715956

申请日：2003-11-17

申请人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

发明人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76808 ,  H01L21/31144 ,  H01L21/76802

摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This is particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.

摘要翻译： 描述了几种用于通过改变其组成以使其与周围电介质的蚀刻速率相匹配来调节牺牲光吸收材料（SLAM）的蚀刻速率的技术。 这在双镶嵌工艺中特别有用，其中SLAM填充通孔开口并与周围的电介质材料一起蚀刻以形成覆盖通孔开口的沟槽。

公开(公告)号：US20050042874A1

公开(公告)日：2005-02-24

申请号：US10953744

申请日：2004-09-29

申请人： Robert Meagley ,  Peter Moon ,  Kevin O'Brien

发明人： Robert Meagley ,  Peter Moon ,  Kevin O'Brien

IPC分类号： H01L21/768 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76808

摘要： A thermally decomposable sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The thermally decomposable sacrificial material may be removed without damaging or removing the dielectric layer. The thermally decomposable sacrificial material may be a combination of organic and inorganic materials, such as a hydrocarbon-siloxane polymer hybrid.

摘要翻译： 将可热分解的牺牲材料沉积在半导体衬底上的电介质层的空隙或开口中。 可以除去可热分解的牺牲材料而不损坏或去除介电层。 可热分解的牺牲材料可以是有机和无机材料的组合，例如烃 - 硅氧烷聚合物杂化物。

公开(公告)号：US20190304524A1

公开(公告)日：2019-10-03

申请号：US15942349

申请日：2018-03-30

申请人： Kaan Oguz ,  Charles Kuo ,  Mark Doczy ,  Kevin O'Brien

发明人： Kaan Oguz ,  Charles Kuo ,  Mark Doczy ,  Kevin O'Brien

IPC分类号： G11C11/16 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22

摘要： A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit torque material and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet structure electrode, where the free magnet structure includes a free magnet that is dipole coupled with a magnetic stability enhancement layer. The pMTJ device further includes a fixed layer and a tunnel barrier between the free layer and the fixed layer.