公开(公告)号：US20110215445A1

公开(公告)日：2011-09-08

申请号：US13015720

申请日：2011-01-28

Applicant: Liu Yang ,  Manchao Xiao ,  Bing Han ,  Kirk S. Cuthill ,  Mark L. O'Neill

Inventor： Liu Yang ,  Manchao Xiao ,  Bing Han ,  Kirk S. Cuthill ,  Mark L. O'Neill

IPC: H01L21/316 ,  H01L29/00 ,  C23C16/30 ,  C23C16/44 ,  C09D183/04 ,  C07F7/02 ,  B01J19/00

CPC classification number: H01L21/02216 ,  B01J19/00 ,  C07F7/02 ,  C09D183/04 ,  C23C16/30 ,  C23C16/44 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/316 ,  H01L29/00

Abstract: Described herein are methods of forming dielectric films comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.

Abstract translation: 本文描述了形成包括硅，氧化物和任选的氮，碳，氢和硼的介电膜的方法。 本文还公开了在待加工物体上形成介电膜或涂层的方法，例如半导体晶片。

公开(公告)号：US20100304047A1

公开(公告)日：2010-12-02

申请号：US12476734

申请日：2009-06-02

Applicant: Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, JR. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

Inventor： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, JR. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

IPC: H05H1/24 ,  B05D5/12

CPC classification number: H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

Abstract: This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Abstract translation: 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US20100233886A1

公开(公告)日：2010-09-16

申请号：US12717572

申请日：2010-03-04

Applicant: Liu Yang ,  Manchao Xiao ,  Kirk Scott Cuthill ,  Bing Han ,  Mark Leonard O'Neill

Inventor： Liu Yang ,  Manchao Xiao ,  Kirk Scott Cuthill ,  Bing Han ,  Mark Leonard O'Neill

IPC: H01L21/316

CPC classification number: H01L21/02164 ,  C23C16/30 ,  C23C16/308 ,  C23C16/401 ,  H01L21/0228

Abstract: Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.

Abstract translation: 这里描述的是形成包括硅的介电膜的方法，所述介电膜包括硅，例如但不限于氧化硅，碳氧化硅，碳化硅及其组合，其表现出以下特征中的至少一个：低湿蚀刻电阻，介电常数 为6.0或更低，和/或可承受高温快速热退火工艺。 本文还公开了在待加工物体上形成介电膜或涂层的方法，例如半导体晶片。

公开(公告)号：US20070064281A1

公开(公告)日：2007-03-22

申请号：US11523903

申请日：2006-09-19

Applicant: Liu Yang

Inventor： Liu Yang

IPC: H04N1/04

CPC classification number: H04N1/00519 ,  H04N1/00551 ,  H04N1/00554 ,  H04N1/10 ,  H04N2201/0081

Abstract: A scanner includes a main body, a cover, a back plate and a positioning mechanism. The cover is pivoted to the main body. The back plate is disposed between the main body and the cover with one end pivoted to the main body and another end connected to the cover. The positioning mechanism is disposed on the cover and connecting the back plate and the cover, whereby the back plate is maintained at a predetermined position on the cover at an angle with respect to the main body.

Abstract translation: 扫描仪包括主体，盖，后板和定位机构。 盖子枢转到主体。 背板设置在主体和盖之间，一端枢转到主体，另一端连接到盖。 定位机构设置在盖上并连接背板和盖，由此背板相对于主体以一定角度保持在盖上的预定位置。

公开(公告)号：US20050171681A1

公开(公告)日：2005-08-04

申请号：US11062085

申请日：2005-02-18

Applicant: Tianshu Yang ,  Liu Yang

Inventor： Tianshu Yang ,  Liu Yang

IPC: B60Q1/44 ,  B60Q1/52 ,  F02D29/02 ,  G06F19/00

CPC classification number: B60Q1/525 ,  B60Q1/44 ,  B60Q5/006 ,  B60W30/08 ,  B60W30/16 ,  B60W50/14 ,  B60W2050/008 ,  F02D29/02 ,  F02D41/045 ,  F02D41/12 ,  F02D2200/0404

Abstract: A kind of method and system for preventing rear end collision of vehicles are intended to apply to the vehicles equipped with the electric fuel injection system. By using a fuel-decreasing pre-warning electric control unit standing for PW-ECU, the throttle value D of the engine can be obtained through sampling from the throttle sensor 1 of the electric fuel injection system in real time. Do time differential operation to the throttle value D to get the throttle speed value Rt, then comparing the throttle speed value Rt with a preset fuel-decreasing pre-warning value Rp. If Rt equal to or exceed the preset value Rp when the engine decreases the fuel, the pre-warning devices 7 driven by PW-ECU will send out the pre-warning signals to the following vehicles. Therefore we can realize preventing rear end collision of the vehicles by the fuel-decreasing pre-warning method. At same time we provide a system for preventing rear end collision of the vehicles by the fuel-decreasing pre-warning method.

Abstract translation: 一种用于防止车辆后端碰撞的方法和系统旨在应用于配备有电动燃料喷射系统的车辆。 通过使用放置在PW-ECU上的燃料减少预警电气控制单元，可以通过从电动燃料喷射系统的节气门传感器1实时采样来获得发动机的节气门值D. 对节气门值D进行时间差分运算以得到节气门速度值R ，然后将节气门速度值R＆lt; T＆gt;与预设的燃料减少预警值进行比较 R＆lt; p＆gt;。 当发动机减少燃料时，如果R 等于或超过预设值R

，则由PW-ECU驱动的预警装置7将发出预警， 向以下车辆发出警告信号。 因此，通过减少燃油预警的方法，可以实现防止车辆的后端碰撞。 同时，我们提供了一种通过减少燃油预警方法来防止车辆后方碰撞的系统。

公开(公告)号：US20170295357A1

公开(公告)日：2017-10-12

申请号：US15504073

申请日：2015-08-17

Applicant: Liu Yang

Inventor： Liu Yang

IPC: H04N13/00 ,  H04N13/02 ,  H04N7/14 ,  H04N13/04

CPC classification number: H04N13/189 ,  G06F1/1626 ,  G06F3/04815 ,  H04M1/0268 ,  H04M1/72527 ,  H04M2250/52 ,  H04N7/142 ,  H04N13/128 ,  H04N13/139 ,  H04N13/156 ,  H04N13/161 ,  H04N13/194 ,  H04N13/239 ,  H04N13/243 ,  H04N13/246 ,  H04N13/271 ,  H04N13/296 ,  H04N13/30 ,  H04N13/302 ,  H04N13/305 ,  H04N13/31 ,  H04N13/337 ,  H04N13/341 ,  H04N13/344 ,  H04N13/366 ,  H04N13/398 ,  H04N21/816 ,  H04N2213/001

Abstract: A three-dimensional (3D) communication device includes a 3D stereoscopic camera for capturing video and photos in 3D. The device also includes a 3D display, which enables the display of video and photos in 3D that have been captured by a local user's communication device or that have been received from a remote 3D communication device. The 3D communication device may be configured as a handheld standalone device or may alternatively be configured as a modular device, a case, or a dock that can be interfaced with a portable computing device, such as a smart phone, which lacks the capability to capture and view 3D video/photo content. As such, the 3D communication device enables 3D chat or communication between a local user and one or more remote users of the 3D communication device or any other computing device that is configured with suitable communication or chat software.

公开(公告)号：US09766421B2

公开(公告)日：2017-09-19

申请号：US14364183

申请日：2012-09-04

Applicant: Liu Yang ,  Meng Wang ,  Zhilin Yuan ,  Rui Yang ,  Lidan Song ,  Liping Sun ,  Jinping Guo ,  Dingkang Chen ,  Yuhong Ma ,  Lihong Tang

Inventor： Liu Yang ,  Meng Wang ,  Zhilin Yuan ,  Rui Yang ,  Lidan Song ,  Liping Sun ,  Jinping Guo ,  Dingkang Chen ,  Yuhong Ma ,  Lihong Tang

IPC: G02B7/182 ,  G02B7/00 ,  G02B7/18 ,  G02B26/08 ,  B32B41/00 ,  G02F1/29 ,  H04J14/02 ,  H04Q11/00

CPC classification number: G02B7/008 ,  B32B41/00 ,  G02B7/181 ,  G02B26/0816 ,  G02F1/29 ,  H04J14/0212 ,  H04Q2011/003

Abstract: A method for compensating for a wavelength shift in a wavelength selective switch (WSS), and a device therefor. The device comprises a fixed seat (301) as well as a rotation beam (304) and a compensation block (302) that have different thermal expansion amounts, the rotation beam (304) and the compensation block (302) being fixedly adhered to the fixed seat (301). In the method, a combined structure of the rotation beam (304) and the compensation block (302) with different thermal expansion amounts is adopted; the combined structure rotates by means of different expansion amounts generated by the rotation beam (304) and the compensation block (302) at the same external temperature, and further drives an optical element of the WSS to rotate, hence compensating for a wavelength shift of the WSS. The method is safe and reliable; the device has a simple structure, and is convenient to encapsulate, is applicable to various WSS optical paths, and does not affect advantages of the optical path structure of the WSS.

公开(公告)号：US08906455B2

公开(公告)日：2014-12-09

申请号：US13624190

申请日：2012-09-21

Applicant: Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Hansong Cheng

Inventor： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Hansong Cheng

IPC: C23C16/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/318 ,  C23C16/34 ,  H01L21/314 ,  C23C16/40 ,  C23C16/455 ,  C23C16/30

CPC classification number: H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

Abstract: This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Abstract translation: 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US08507040B2

公开(公告)日：2013-08-13

申请号：US13156501

申请日：2011-06-09

Applicant: Manchao Xiao ,  Xinjian Lei ,  Liu Yang

Inventor： Manchao Xiao ,  Xinjian Lei ,  Liu Yang

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/18

CPC classification number: C23C16/305 ,  C23C16/45553

Abstract: This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Abstract translation: 本发明公开了使用化学气相沉积（CVD）工艺，原子层沉积（ALD）工艺或湿法工艺的金属硫族化合物的合成。 有机甲硅烷基碲或有机甲硅烷基硒与一系列具有亲核取代基的金属化合物的配体交换反应产生金属硫族化物。 该化学物质用于沉积锗 - 锑碲（GeSbTe）和锗 - 锑 - 硒（GeSbSe）膜或其他碲和硒基金属化合物用于相变记忆和光伏器件。

公开(公告)号：US20120330210A1

公开(公告)日：2012-12-27

申请号：US13599194

申请日：2012-08-30

Applicant: Liu Yang ,  Valerio DiTizio

Inventor： Liu Yang ,  Valerio DiTizio

IPC: A61L15/44 ,  A61F13/02 ,  A61L15/26

CPC classification number: A61K31/155 ,  A61K33/38 ,  A61K45/06 ,  A61L2/232 ,  A61L15/44 ,  A61L15/46 ,  A61L15/60 ,  A61L26/0066 ,  A61L26/008 ,  A61L2300/104 ,  A61L2300/206 ,  A61L2300/404 ,  A61L2300/442 ,  A61K2300/00 ,  C08L83/04

Abstract: Antimicrobial silicone-based dressings, such as wound dressings, are disclosed. An example dressing comprises a transparent and self-adhesive gel sheet cured from a liquid containing silicone, the sheet having dispersed therein (i) particulates of a chlorhexidine compound that is not soluble in the liquid; and (ii) at least one other antimicrobial. Methods of making the silicone-based dressings and methods of use are also disclosed.

Abstract translation: 公开了抗菌硅酮敷料，如伤口敷料。 实例敷料包括从含有硅酮的液体固化的透明和自粘凝胶片，其中分散有片材（i）不溶于液体的洗必太化合物的颗粒; 和（ii）至少一种其它抗微生物剂。 还公开了制备硅酮基敷料和使用方法的方法。