公开(公告)号：US08502465B2

公开(公告)日：2013-08-06

申请号：US12936238

申请日：2010-09-20

Applicant: Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames

Inventor： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames

IPC: H05B37/02 ,  H01L29/22

CPC classification number: H05B37/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/16 ,  H01L2224/48

Abstract: A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.

Abstract translation: 发射波长为390-415nm的发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该器件的电流密度大于约175安培/厘米2，外部量子效率具有小于约5％的绝对效率。

公开(公告)号：US08492185B1

公开(公告)日：2013-07-23

申请号：US13548931

申请日：2012-07-13

Applicant: Mark P. D'Evelyn ,  James Speck ,  William Houck ,  Mathew Schmidt ,  Arpan Chakraborty

Inventor： Mark P. D'Evelyn ,  James Speck ,  William Houck ,  Mathew Schmidt ,  Arpan Chakraborty

IPC: H01L21/00

CPC classification number: H01L21/02395 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0075

Abstract: A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes.

Abstract translation: 描述了制造具有高质量，低堆垛层错密度和相对低的位错密度的大面积非极性或半极性GaN晶片的方法。 晶圆可用作后续体积生长的晶种，也可用作LED和激光二极管的基板。

公开(公告)号：US08455894B1

公开(公告)日：2013-06-04

申请号：US12569844

申请日：2009-09-29

Applicant: Mark P. D'Evelyn ,  Rajat Sharma ,  Eric M. Hall

Inventor： Mark P. D'Evelyn ,  Rajat Sharma ,  Eric M. Hall

IPC: H01L33/02

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/382 ,  H01L2933/0083

Abstract: A high efficiency photonic-crystal light emitting diode comprises a flip-chipped stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1. Each layer has a high crystalline quality, with a dislocation density below about 105 cm−2. The backside of the stack, exposed by removal of the original substrate, has a photonic crystal pattern for improved light extraction.

Abstract translation: 高效率的光子晶体发光二极管包括Al x In y Ga 1-x-y N层的倒装堆叠，其中0 @ x，y，x + y @ 1。 每层具有高的结晶质量，位错密度低于约105cm-2。 通过去除原始基板曝光的堆叠的背面具有用于改进光提取的光子晶体图案。

公开(公告)号：US08435347B2

公开(公告)日：2013-05-07

申请号：US12891668

申请日：2010-09-27

Applicant: Mark P. D'Evelyn ,  Joseph A. Kapp ,  John C. Lawrenson

Inventor： Mark P. D'Evelyn ,  Joseph A. Kapp ,  John C. Lawrenson

IPC: B01J3/04

CPC classification number: C30B7/10 ,  C30B7/105 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

Abstract: A high pressure apparatus and related methods for processing supercritical fluids is described. The apparatus includes a capsule, a heater, at least one ceramic ring with one or more scribe marks and/or cracks present. The apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. The apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

Abstract translation: 描述了用于加工超临界流体的高压装置和相关方法。 该装置包括胶囊，加热器，至少一个具有一个或多个划痕和/或裂纹的陶瓷环。 该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳，具有相关绝缘的端部法兰和电源控制系统。 该装置能够分别获得0.2-2GPa和400-1200℃的压力和温度。

公开(公告)号：US08303710B2

公开(公告)日：2012-11-06

申请号：US12478736

申请日：2009-06-04

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: C30B11/00 ,  C30B9/00 ,  C30B17/00 ,  C30B21/02 ,  C30B28/06 ,  C30B35/00

CPC classification number: C30B7/00 ,  C30B29/403 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1092

Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

Abstract translation: 一种用于加工超临界流体的高压装置及相关方法。 在具体实施例中，本装置包括胶囊，加热器，至少一个陶瓷环，但可以是多个环，任选地，存在一个或多个划痕和/或裂纹。 在具体实施例中，该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳，具有相关绝缘的端部法兰和电源控制系统。 在具体实施例中，该装置能够分别访问0.2-2GPa和400-1200℃的压力和温度。

公开(公告)号：US08299473B1

公开(公告)日：2012-10-30

申请号：US12754886

申请日：2010-04-06

Applicant: Mark P. D'Evelyn ,  Rajat Sharma ,  Eric M. Hall ,  Daniel F. Feezell

Inventor： Mark P. D'Evelyn ,  Rajat Sharma ,  Eric M. Hall ,  Daniel F. Feezell

IPC: H01L27/15 ,  H01L33/00

CPC classification number: H01L33/50 ,  H01L33/16 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/505 ,  H01L33/507 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.

Abstract translation: 发光器件包括具有覆盖表面区域的表面区域和发光二极管的衬底。 发光二极管制造在含有半极性或非极性GaN的衬底上并且发射第一波长的电磁辐射。 二极管包括以电子波函数和空穴波函数为特征的量子阱区域。 电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 该器件具有覆盖发光二极管的透明磷光体。 磷光体被基本上极化的发射激发以发射第二波长的电磁辐射。

公开(公告)号：US20120118223A1

公开(公告)日：2012-05-17

申请号：US13343563

申请日：2012-01-04

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: C30B7/10

CPC classification number: C30B29/406 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/068 ,  B30B11/005 ,  C30B7/10 ,  C30B29/403 ,  Y02P20/544 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

Abstract translation: 一种用于加工超临界流体的高压装置及相关方法。 在具体实施例中，本装置包括胶囊，加热器，至少一个陶瓷环，但可以是多个环，任选地，存在一个或多个划痕和/或裂纹。 在具体实施例中，该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳，具有相关绝缘的端部法兰和电源控制系统。 在具体实施例中，该装置能够分别访问0.2-2GPa和400-1200℃的压力和温度。

公开(公告)号：US20090320745A1

公开(公告)日：2009-12-31

申请号：US12484095

申请日：2009-06-12

Applicant: Mark P. D'Evelyn ,  James S. Speck ,  Michael T. Coulter ,  Shuji Nakamura

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Michael T. Coulter ,  Shuji Nakamura

IPC: C30B11/00 ,  H05B3/02 ,  C30B29/38

CPC classification number: H05B3/46 ,  H05B2203/003 ,  H05B2203/005 ,  H05B2203/017 ,  H05B2203/037 ,  Y10T117/1092

Abstract: An improved heater for processing materials or growing crystals in supercritical fluids is provided. In a specific embodiment, the heater is scalable up to very large volumes and is cost effective. In conjunction with suitable high pressure apparatus, the heater is capable of processing materials at pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

Abstract translation: 提供了用于处理材料或在超临界流体中生长晶体的改进的加热器。 在具体实施例中，加热器可扩展到非常大的体积并且是成本有效的。 结合合适的高压装置，加热器能够分别在0.2-2GPa和400-1200℃的压力和温度下处理材料。

公开(公告)号：US07119372B2

公开(公告)日：2006-10-10

申请号：US10693126

申请日：2003-10-24

Applicant: Edward B. Stokes ,  Mark P. D'Evelyn ,  Stanton E. Weaver ,  Peter M. Sandvik ,  Abasifreke U. Ebong ,  Xian-an Cao ,  Steven F. LeBoeuf ,  Nikhil R. Taskar

Inventor： Edward B. Stokes ,  Mark P. D'Evelyn ,  Stanton E. Weaver ,  Peter M. Sandvik ,  Abasifreke U. Ebong ,  Xian-an Cao ,  Steven F. LeBoeuf ,  Nikhil R. Taskar

IPC: H01L27/15

CPC classification number: H01L33/405 ,  H01L33/387 ,  H01L2933/0083

Abstract: A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).

Abstract translation: 倒装芯片发光二极管管芯（10,10'，10“）包括透光衬底（12,12'，12”）和半导体层（14,14'，14“），其被选择性地图案化 以限定装置台面（30,30'，30“）。 反射电极（34,34'，34“）设置在器件台面（30,30'，30”）上。 反射电极（34,34'，34“）包括设置在器件台面（30,30'，30”）上方的透光绝缘栅极（42,42'，60,80），欧姆材料 44,44'，44“，62）设置在绝缘栅极（42,42'，60,80）的开口处并与器件台面（30,30'，30”）形成欧姆接触， 设置在绝缘栅极（42,42'，60,80）上的导电反射膜（46,46'，46“）和欧姆材料（44,44'，44”，62）。 导电反射膜（46,46'，46“）与欧姆材料（44,44'，44”，62）电连通。