公开(公告)号：US06204099B1

公开(公告)日：2001-03-20

申请号：US09390904

申请日：1999-09-07

申请人： Naoto Kusumoto ,  Shunpei Yamazaki

发明人： Naoto Kusumoto ,  Shunpei Yamazaki

IPC分类号： H01L2100

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02691 ,  H01L21/2022 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： An amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 &mgr;m or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystallize it. Then, of end portions (peripheral portions) of the island semiconductor regions, at least a portion used to form a channel of a thin film transistor (TFT), or a portion that a gate electrode crosses is etched, so that a region that the distortion is accumulated is removed. By using such semiconductor regions, a TFT is produced.

摘要翻译： 蚀刻非晶半导体膜，使其最窄部分的宽度为100μm以下，从而形成岛状半导体区域。 通过将诸如激光的强光照射到岛状半导体区域中，进行光退火以使其结晶。 然后，在岛状半导体区域的端部（周边部分）中，至少一部分用于形成薄膜晶体管（TFT）的通道的部分，或栅电极交叉的部分被蚀刻，使得 失真累积被去除。 通过使用这样的半导体区域，制造TFT。

公开(公告)号：US6054739A

公开(公告)日：2000-04-25

申请号：US10486

申请日：1998-01-21

申请人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Koichiro Tanaka

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/26

CPC分类号： H01L29/78696 ,  H01L21/2026 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66765

摘要： In producing a semiconductor device by annealing with laser light irradiation, while a linear laser light is scanned in a direction perpendicular to a line, the annealing is performed for a semiconductor material. In this state, since an anneal effect in a beam lateral direction corresponding to a line direction is 2 times or more different than that in the scanning direction, a plurality of semiconductor elements are formed along a line direction in which the linear laser light is irradiated. Also, a line direction connecting the source and drain region of a thin film transistor is aligned to the line direction of the linear laser light.

摘要翻译： 在通过激光照射进行退火来制造半导体器件的同时，在垂直于线的方向上扫描线性激光，对半导体材料进行退火。 在这种状态下，由于在与线方向对应的光束横向的退火效应是与扫描方向相反的2倍以上的退火效应，因此沿着照射线状激光的线方向形成多个半导体元件 。 而且，连接薄膜晶体管的源极和漏极区域的线方向与线性激光的线方向对准。

公开(公告)号：US5956581A

公开(公告)日：1999-09-21

申请号：US616623

申请日：1996-03-15

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Hideto Ohnuma

IPC分类号： H01L21/20 ,  H01L21/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/324

CPC分类号： H01L27/1214 ,  H01L21/3003 ,  H01L21/2026 ,  H01L29/66765 ,  Y10S438/908

摘要： A method of manufacturing a semiconductor device, comprises the steps of: forming an amorphous silicon film on a substrate having an insulating surface; processing said amorphous silicon film by plasma of a gas that mainly contains hydrogen or helium; and giving an energy to said amorphous silicon film.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在具有绝缘表面的衬底上形成非晶硅膜; 通过主要含有氢或氦的气体的等离子体处理所述非晶硅膜; 并向所述非晶硅膜提供能量。

公开(公告)号：US5953597A

公开(公告)日：1999-09-14

申请号：US604547

申请日：1996-02-21

申请人： Naoto Kusumoto ,  Shunpei Yamazaki

发明人： Naoto Kusumoto ,  Shunpei Yamazaki

IPC分类号： H01L21/20 ,  H01L21/335 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/01 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L31/0392 ,  H01L21/00

CPC分类号： H01L29/78696 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L21/2022

摘要： An amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 .mu.m or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystallize it. Then, of end portions (peripheral portions) of the island semiconductor regions, at least a portion used to form a channel of a thin film transistor (TFT), or a portion that a gate electrode crosses is etched, so that a region that the distortion is accumulated is removed. By using such semiconductor regions, a TFT is produced.

摘要翻译： 蚀刻非晶半导体膜，使其最窄部分的宽度为100μm以下，由此形成岛状半导体区域。 通过将诸如激光的强光照射到岛状半导体区域中，进行光退火以使其结晶。 然后，在岛状半导体区域的端部（周边部分）中，至少一部分用于形成薄膜晶体管（TFT）的通道的部分，或栅电极交叉的部分被蚀刻，使得 失真累积被去除。 通过使用这样的半导体区域，制造TFT。

公开(公告)号：US5753542A

公开(公告)日：1998-05-19

申请号：US396780

申请日：1995-03-01

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L31/20 ,  H01L21/268

CPC分类号： H01L21/2026 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/41

摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5.times.10.sup.19 atoms.cm.sup.-3 or lower, preferably 1.times.10.sup.19 atoms.cm.sup.-3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.

公开(公告)号：US5656825A

公开(公告)日：1997-08-12

申请号：US487166

申请日：1995-06-07

申请人： Naoto Kusumoto ,  Yasuhiko Takemura ,  Hisashi Ohtani

发明人： Naoto Kusumoto ,  Yasuhiko Takemura ,  Hisashi Ohtani

IPC分类号： H01L21/20 ,  C30B1/02 ,  H01L21/02 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76 ,  H01L27/01

CPC分类号： H01L29/78696 ,  C30B1/023 ,  C30B29/06 ,  H01L27/12 ,  H01L27/1233 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： An amorphous semiconductor film having a thickness of 400.ANG. or more is formed on an insulating surface and is wholly or selectively etched to form a region having a thickness 300.ANG. or less. This is used as a channel-forming region in a TFT.

摘要翻译： 在绝缘表面上形成厚度为400或更大的非晶半导体膜，并且完全或选择性地蚀刻以形成厚度为300或更小的区域。 这被用作TFT中的沟道形成区域。

公开(公告)号：US09095066B2

公开(公告)日：2015-07-28

申请号：US12483102

申请日：2009-06-11

申请人： Naoto Kusumoto

发明人： Naoto Kusumoto

IPC分类号： H05K3/34 ,  H05K1/11 ,  H05K1/14

CPC分类号： H05K1/111 ,  H05K1/141 ,  H05K3/341 ,  H05K3/3431 ,  H05K3/3442 ,  H05K2201/049 ,  H05K2201/09381 ,  H05K2201/09427 ,  H05K2201/10121 ,  H05K2201/10378 ,  H05K2201/10636 ,  H05K2203/048 ,  Y02P70/611 ,  Y02P70/613

摘要： A printed board is provided, which includes at least a first connecting electrode and a second connecting electrode. A solder is provided over the first connecting electrode and the second connecting electrode, and a chip component is provided over the solder. The chip component includes a first terminal electrode and a second terminal electrode. The first connecting electrode is overlapped with the first terminal electrode and is electrically connected to the first terminal electrode through the solder. The second connecting electrode is overlapped with the second terminal electrode and is electrically connected to the second terminal electrode through the solder. Two corner portions of each of the first connecting electrode and the second connecting electrode are overlapped with two corner portions of each of the first terminal electrode and the second terminal electrode.

摘要翻译： 提供了一种印刷电路板，其包括至少第一连接电极和第二连接电极。 在第一连接电极和第二连接电极之上提供焊料，并且在焊料上方设置芯片部件。 芯片部件包括第一端子电极和第二端子电极。 第一连接电极与第一端子电极重叠，并通过焊料与第一端子电极电连接。 第二连接电极与第二端子电极重叠，并且通过焊料与第二端子电极电连接。 第一连接电极和第二连接电极的两个角部与第一端子电极和第二端子电极的两个角部重叠。

公开(公告)号：US09059347B2

公开(公告)日：2015-06-16

申请号：US13159579

申请日：2011-06-14

申请人： Kazuo Nishi ,  Takashi Hirose ,  Naoto Kusumoto

发明人： Kazuo Nishi ,  Takashi Hirose ,  Naoto Kusumoto

IPC分类号： H01L31/06 ,  H01L31/0352 ,  H01L31/0376 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0465

CPC分类号： H01L31/03762 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03921 ,  H01L31/0465 ,  H01L31/1816 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device having a high electric generating capacity at low illuminance, in which a semiconductor layer is appropriately separated and short circuit of a side surface portion of a cell is prevented. The photoelectric conversion device includes an isolation groove formed between one first electrode and the other first electrode that is adjacent to the one first electrode; a stack including a first semiconductor layer having one conductivity type over the first electrode, a second semiconductor layer formed using an intrinsic semiconductor, and a third semiconductor layer having a conductivity type opposite to the one conductivity type; and a connection electrode connecting one first electrode and a second electrode that is in contact with a third semiconductor layer included in a stack formed over the other first electrode that is adjacent to the one first electrode. A side surface portion of the second semiconductor layer is not crystallized.

摘要翻译： 具有低照度的高发电量的光电转换装置，其中半导体层被适当地分离并且防止了电池的侧表面部分的短路。 光电转换装置包括形成在与第一电极相邻的一个第一电极和另一个第一电极之间的隔离槽; 包括在第一电极上具有一种导电类型的第一半导体层的堆叠，使用本征半导体形成的第二半导体层和具有与一种导电类型相反的导电类型的第三半导体层; 以及连接电极，其连接与包含在与所述一个第一电极相邻的另一个第一电极上形成的堆叠中的第三半导体层接触的第一电极和第二电极。 第二半导体层的侧表面部分不结晶。

公开(公告)号：US08557614B2

公开(公告)日：2013-10-15

申请号：US13336356

申请日：2011-12-23

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Naoto Kusumoto

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Naoto Kusumoto

IPC分类号： H01L21/66

CPC分类号： H01L51/56 ,  H01L27/3204 ,  H01L51/5268 ,  H01L51/5275 ,  H01L2251/5361 ,  H01L2251/5392 ,  H01L2251/568

摘要： An object is to provide a method for manufacturing a lighting device, in which a problem of a short circuit between an upper electrode and a lower electrode of a light-emitting element is solved without reducing a light-emitting property of a normal portion of the light-emitting element to the utmost. In a light-emitting element including an upper electrode, an electroluminescent layer, and a lower electrode, a short-circuited portion that is undesirably formed between the upper electrode and the lower electrode is irradiated with a laser beam, whereby a region where the short-circuited portion is removed is formed, and then the region is filled with an insulating resin having a light-transmitting property. Thus, the problem of the short circuit between the upper electrode and the lower electrode is solved and yield of a lighting device is improved.

摘要翻译： 本发明的目的是提供一种照明装置的制造方法，其中解决了发光元件的上部电极和下部电极之间的短路问题，而不会降低发光元件的正常部分的发光特性 发光元件最大。 在包括上电极，电致发光层和下电极的发光元件中，用激光束照射不希望地形成在上电极和下电极之间的短路部分，由此短路的区域 形成去除的部分，然后用具有透光性的绝缘树脂填充该区域。 因此，解决了上电极和下电极之间短路的问题，并且提高了照明装置的产量。

公开(公告)号：US08258512B2

公开(公告)日：2012-09-04

申请号：US12752388

申请日：2010-04-01

申请人： Kazuo Nishi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara

发明人： Kazuo Nishi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara

IPC分类号： H01L29/04

CPC分类号： H01L27/14665 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469 ,  H01L27/14692

摘要： An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.

摘要翻译： 本发明的目的在于提供一种通过进行薄膜晶体管的形成工序和并联形成光电转换层的工序，在短时间内制造的半导体器件，并提供其制造工艺。 根据本发明，制造半导体器件，使得在第一衬底上形成薄膜晶体管，在第二衬底上形成光电转换元件，并且连接薄膜晶体管和光电转换元件 通过将导电层夹在彼此相对的第一和第二基板之间，使得薄膜晶体管和光电转换元件位于第一和第二基板之间。 因此，可以提供一种制造半导体器件的方法，该方法抑制步骤数量的增加并增加通过量。