公开(公告)号：US20100089533A1

公开(公告)日：2010-04-15

申请号：US12442834

申请日：2007-12-26

申请人： Masahisa Ueda ,  Takashi Kurimoto ,  Michio Ishikawa ,  Koukou Suu ,  Toshiya Yogo

发明人： Masahisa Ueda ,  Takashi Kurimoto ,  Michio Ishikawa ,  Koukou Suu ,  Toshiya Yogo

IPC分类号： H01L21/3065

CPC分类号： H01L21/31138 ,  H01J37/3244

摘要： Disclosed is an ashing apparatus wherein decrease in processing efficiency is suppressed. Specifically, a shower plate is arranged to face a substrate stage on which a substrate is placed, and diffuses oxygen radicals supplied into a chamber. A metal blocking plate is arranged between the shower plate and the substrate stage and has a through hole through which oxygen radicals pass. In addition, the metal blocking plate has a first layer, which is made of a metal same as the one exposed in the substrate, on the surface facing the substrate.

摘要翻译： 公开了一种抑制加工效率降低的灰化装置。 具体而言，将淋浴板配置成面对放置有基板的基板台，并使供给到室内的氧自由基扩散。 金属阻挡板布置在淋浴板和衬底台之间，并且具有氧自由基通过的通孔。 此外，金属阻挡板具有在与基板相对的表面上由与基板中露出的金属相同的金属制成的第一层。

公开(公告)号：US20100062606A1

公开(公告)日：2010-03-11

申请号：US12594966

申请日：2008-04-10

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01L21/31116

摘要： The object of the present invention is to provide a dry etching method by which generation of a notch in an insulating layer can be suppressed and highly-accurate microfabrication can be realized. In a dry etching method according to the present invention, a substrate in which a semiconductor layer is formed on an insulating layer formed of a silicon oxide is prepared, a through-hole is formed in the semiconductor layer, and a resin film is formed on side walls of the through-hole and a recessed portion while forming the recessed portion in the insulating layer by etching an area in which the insulating layer is exposed via the through-hole. By forming the resin film on the side wall of the recessed portion, the side wall of the recessed portion is protected from collision of ions in plasma and generation of a notch in the recessed-portion side wall is suppressed. Furthermore, by forming the resin film on the side wall of the through-hole, the side wall of the through-hole is protected from the collision of ions in plasma and a hole shape of the through-hole is prevented from fluctuating.

摘要翻译： 本发明的目的是提供一种能够抑制绝缘层中的凹口的产生并且可以实现高精度微细加工的干蚀刻方法。 在根据本发明的干蚀刻方法中，制备了在由氧化硅形成的绝缘层上形成半导体层的基板，在半导体层中形成通孔，并且在 通过蚀刻绝缘层经由通孔露出的区域，同时在绝缘层中形成凹部，同时通孔的侧壁和凹部。 通过在凹部的侧壁上形成树脂膜，可以防止凹部的侧壁与等离子体中的离子碰撞，并且抑制凹部侧壁中的切口的产生。 此外，通过在通孔的侧壁上形成树脂膜，可以防止通孔的侧壁免受等离子体中的离子的碰撞，并且防止通孔的孔形状发生波动。

公开(公告)号：US20090261066A1

公开(公告)日：2009-10-22

申请号：US12440116

申请日：2007-09-05

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01J37/321 ,  C03C15/00 ,  H01J37/32009 ,  H01J37/32541 ,  H01J37/3266 ,  H01J37/32706 ,  H01L21/67069

摘要： The present invention herein provides an apparatus and a method for dry etching, which can solve such a problem that an object to be processed undergoes cracking during the etching procedures due to the heat deformation thereof and thermal shocks, possibly encountered when subjecting, to dry etching procedures, the object having a high thermal expansion coefficient. A dry etching apparatus is provided with an electrode structure having a convex-shaped surface, the convex-shape is one concentric with the cross section of the electrode structure and the height thereof falls within the range of from 0.2 to 1.0 mm. An object consisting of a material having a thermal expansion coefficient of not less than 30×10−7/° C. is subjected to dry etching while using the foregoing dry etching apparatus.

摘要翻译： 本发明提供了一种用于干法蚀刻的装置和方法，其可以解决在蚀刻过程中由于其热变形和热冲击而被处理物体经受裂纹的问题，当经受干蚀刻时可能遇到的热冲击 程序，该物体具有较高的热膨胀系数。 干蚀刻装置设置有具有凸形表面的电极结构，凸形与电极结构的横截面同心，其高度在0.2至1.0mm的范围内。 使用上述干式蚀刻装置对由热膨胀系数为30×10 -7 /℃以上的材料构成的物体进行干式蚀刻。

公开(公告)号：US08993449B2

公开(公告)日：2015-03-31

申请号：US13386213

申请日：2010-08-12

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/30655

摘要： There is provided an etching method which can form trenches or via holes having desired aspect ratios and shapes in a to-be-processed object made of silicon. The etching method includes: a hydrogen halide-containing gas-based etching step of etching a silicon substrate by introducing a hydrogen halide-containing gas into a vacuum chamber; a fluorine-containing gas-based etching step of etching the silicon substrate by introducing a fluorine-containing gas into the vacuum chamber; a protective film formation step forming a protective film on the silicon substrate by sputtering a solid material; and a protective film removal step of removing part of the protective film by applying radio frequency bias power to a substrate electrode. The fluorine-containing gas-based etching step, the protective film formation step, and the protective film removal step are repeatedly performed in this order.

摘要翻译： 提供了一种蚀刻方法，其可以在由硅制成的待处理物体中形成具有期望的纵横比和形状的沟槽或通孔。 蚀刻方法包括：含卤化氢的气体基蚀刻步骤，通过将含卤化氢的气体引入真空室来蚀刻硅衬底; 含氟气体蚀刻步骤，通过将真空室中引入含氟气体来蚀刻硅衬底; 通过溅射固体材料在硅衬底上形成保护膜的保护膜形成步骤; 以及通过对基板电极施加射频偏置功率来去除部分保护膜的保护膜去除步骤。 依次重复进行含氟气体蚀刻工序，保护膜形成工序和保护膜除去工序。

公开(公告)号：US20130023062A1

公开(公告)日：2013-01-24

申请号：US13515246

申请日：2010-11-30

申请人： Takeshi Masuda ,  Masahiko Kajinuma ,  Nobuyuki Kato ,  Koukou Suu

发明人： Takeshi Masuda ,  Masahiko Kajinuma ,  Nobuyuki Kato ,  Koukou Suu

IPC分类号： C23C16/22 ,  H01L21/02

CPC分类号： H01L21/02197 ,  C23C16/45565 ,  C23C16/481 ,  C23C16/52 ,  H01L21/02271 ,  H01L21/31691

摘要： In an apparatus for manufacturing a ceramic thin film by employing a thermal CVD method, an internal jig, which is provided with a heat radiation material film on the surface, is provided at a position that faces a substrate (S) on which the film is to be formed. The thin film and a semiconductor device are manufactured using such apparatus.

摘要翻译： 在通过采用热CVD法制造陶瓷薄膜的装置中，在面向基板（S）的位置上设有在表面上设置有散热材料膜的内部夹具 要形成 使用这种装置制造薄膜和半导体器件。

公开(公告)号：US20120305392A1

公开(公告)日：2012-12-06

申请号：US13522226

申请日：2010-12-24

申请人： Poong Kim ,  Koukou Suu ,  Shouichi Hashiguchi ,  Takanori Mikashima ,  Ryouta Uezono

发明人： Poong Kim ,  Koukou Suu ,  Shouichi Hashiguchi ,  Takanori Mikashima ,  Ryouta Uezono

IPC分类号： C04B35/01 ,  C23C14/08

CPC分类号： C04B35/01 ,  C04B35/6262 ,  C04B35/63416 ,  C04B35/638 ,  C04B37/006 ,  C04B2235/3203 ,  C04B2235/3275 ,  C04B2235/5436 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/721 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2237/124 ,  C04B2237/34 ,  C04B2237/40 ,  C23C14/08 ,  C23C14/3414 ,  H01M4/0426 ,  H01M4/525 ,  H01M10/052

摘要： Provided is a method for stably manufacturing high-density sintered LiCoO2. Said method uses a CIP-and-sintering method, which has a forming step using cold hydrostatic pressing and a sintering step. The pressing force is at least 1000 kg/cm2, the sintering temperature is between 1050° C. and 1120° C., and the sintering time is at least two hours. This makes it possible to stably manufacture sintered LiCoO2 with a relative density of at least 90%, a resistivity of at most 3 kΩ·cm, and a mean grain diameter between 20 and 50 μm.

摘要翻译： 提供一种用于稳定制造高密度烧结LiCoO2的方法。 所述方法使用CIP和烧结方法，其具有使用冷静压和烧结步骤的成形步骤。 按压力为1000kg / cm 2以上，烧结温度为1050℃〜1120℃，烧结时间为2小时以上。 这使得可以稳定地制造相对密度为至少90％，电阻率至多为3kΩ·OHgr·cm的平均晶粒直径为20至50μm的烧结LiCoO 2。

公开(公告)号：US08118935B2

公开(公告)日：2012-02-21

申请号：US11132173

申请日：2005-05-19

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/455 ,  C23C16/00 ,  H01L21/306

CPC分类号： C23C16/45502 ,  B01F3/02 ,  B01F5/0256 ,  B01F2215/0427 ,  B01J4/001 ,  B01J10/02 ,  B01J19/247 ,  C23C16/4412 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/4558 ,  C23C16/4585 ,  H01L21/67017

摘要： A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed to the stage. A cylindrical sleeve member is disposed and comes in close contact with a side wall of the stage to surround a periphery of the stage. The height of the stage can be established at the position where the volume of a second space formed below the stage and connected to a vacuum discharge means is larger than that of a first space formed above the stage, in such a manner that an exhaust gas is isotropically discharged from the first space without causing any convection current therein through the interstice between the sleeve member and an inner wall surface constituting the reactor.

摘要翻译： 一种薄膜制造系统，其中用于将基板放置在其上的载物台设置在真空反应器内，并且将用于将成膜气体供应到真空反应器的顶面上的中心区域的气体头设置为使得气体头 反对舞台。 圆柱形套筒构件设置成与舞台的侧壁紧密接触以围绕舞台的周边。 该台架的高度可以在形成在载物台下方并连接到真空排出装置的第二空间的体积大于形成在载物台上方的第一空间的体积的位置上， 从第一空间各向同性地排出，而不会通过套筒构件和构成反应器的内壁面之间的间隙引起任何对流。

公开(公告)号：US20100219158A1

公开(公告)日：2010-09-02

申请号：US12301786

申请日：2007-05-16

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： C23F1/00

CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

摘要： A method for dry etching an interlayer insulating film with an ArF resist or KrF resist thereon comprises dry etching fine features into the interlayer insulating film with an etching gas in such a manner as to form a polymer film on the ArF or KrF resist from the etching gas, wherein the etching gas is introduced under a pressure of 0.5 Pa or less, and wherein a Fourier transform infrared spectrum of the polymer film includes a C—F bond peak at about 1200 cm−1, a C—N bond peak at about 1600 cm−1, and a C—H bond peak at about 3300 cm−1.

摘要翻译： 用ArF抗蚀剂或KrF抗蚀剂干蚀刻层间绝缘膜的方法包括用蚀刻气体将精细特征干蚀刻到层间绝缘膜中，以便从蚀刻法在ArF或KrF抗蚀剂上形成聚合物膜 气体，其中在0.5Pa或更小的压力下引入蚀刻气体，并且其中聚合物膜的傅里叶变换红外光谱包括在约1200cm -1处的C-F键峰，约在约100cm -1处的C-N键峰 1600cm -1和约3300cm -1处的C-H键峰。

公开(公告)号：US20100133233A1

公开(公告)日：2010-06-03

申请号：US12597645

申请日：2008-05-08

申请人： Yasuhiro Morikawa ,  Koukou Suu ,  Toshio Hayashi ,  Tadayuki Satou

发明人： Yasuhiro Morikawa ,  Koukou Suu ,  Toshio Hayashi ,  Tadayuki Satou

IPC分类号： B44C1/22

CPC分类号： H01L21/306 ,  H01L41/332 ,  H03H3/02

摘要： A dry etching method by which a substrate can be dry-etched on both sides without a crack is provided.The dry etching method includes: introducing an etching gas having a fluorocarbon gas and a rare gas into a vacuum chamber; generating plasma in the vacuum chamber having a predetermined pressure; and etching a substrate to be processed adhered on an adhesive surface of a heat-conductive sheet disposed on a substrate table.

摘要翻译： 提供了一种干法蚀刻方法，通过该方法可以在两面上进行干蚀刻而不产生裂纹。 干蚀刻方法包括：将具有碳氟化合物气体和稀有气体的蚀刻气体引入真空室; 在具有预定压力的真空室中产生等离子体; 以及将被处理基板附着在设置在基板台上的导热片的粘接面上。

公开(公告)号：US20090277873A1

公开(公告)日：2009-11-12

申请号：US12440671

申请日：2007-09-05

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： H01L21/3065 ,  B05D5/12 ,  C23C14/34

CPC分类号： H01J37/3266 ,  H01J37/32091 ,  H01J37/32642 ,  H01J2237/334

摘要： The object of the present invention is to provide a dry etching method which permits the reduction of the amount of any etching product formed during the etching process to thus improve the in-plane etching uniformity with respect to an object to be etched. The dry etching method comprises the steps of providing an electrode equipped with an electrode-presser member which at least comprises a surface layer composed of an yttrium-containing oxide and which is disposed on the peripheral region of the upper surface of the electrode, placing a substrate on the electrode and then subjecting the substrate to dry etching, while preventing the formation of any etching product at the peripheral region of the electrode.

摘要翻译： 本发明的目的是提供一种干蚀刻方法，其允许减少在蚀刻工艺期间形成的任何蚀刻产物的量，从而提高相对于待蚀刻对象的面内蚀刻均匀性。 干式蚀刻方法包括以下步骤：提供具有电极压紧构件的电极，所述电极压紧构件至少包括由含钇氧化物构成的表面层，并且设置在电极的上表面的周边区域， 基板，然后对基板进行干蚀刻，同时防止在电极的周边区域形成任何蚀刻产物。