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公开(公告)号：US20170040503A1
公开(公告)日：2017-02-09
申请号：US15297336
申请日：2016-10-19
CPC分类号： H01L33/504 , H01L27/156 , H01L33/0095 , H01L33/58 , H01L2933/0041 , H01L2933/0058
摘要： A method produces a multicolor LED display, the display including an LED luminous unit having a multiplicity of pixels. First subpixels, second subpixel and third subpixels contain an LED chip that emits radiation of a first color, wherein a first conversion layer that converts the radiation into a second color is arranged at least above the second subpixels and a second conversion layer that converts the radiation into a third color is arranged above the third subpixels. At least one process step is carried out in which the first or second conversion layer is applied or removed in at least one defined region above the pixels, wherein a portion of the LED chips is electrically operated, and wherein the region is defined by the radiation generated by the operated LED chips, generated heat or a generated electric field.
摘要翻译： 一种方法产生多色LED显示器，该显示器包括具有多个像素的LED发光单元。 第一子像素，第二子像素和第三子像素包含发射第一颜色的辐射的LED芯片，其中将辐射转换成第二颜色的第一转换层布置在第二子像素的至少上方，以及转换辐射的第二转换层 在第三子像素的上方配置第三颜色。 执行至少一个处理步骤，其中在像素上方的至少一个限定区域中施加或去除第一或第二转换层，其中一部分LED芯片是电操作的，并且其中该区域由辐射 由所操作的LED芯片产生的热量或产生的电场。
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公开(公告)号：US09515232B2
公开(公告)日：2016-12-06
申请号：US14414744
申请日：2013-07-23
CPC分类号： H01L33/504 , H01L27/156 , H01L33/0095 , H01L33/58 , H01L2933/0041 , H01L2933/0058
摘要： A method produces a multicolor LED display, the display including an LED luminous unit having a multiplicity of pixels. First subpixels, second subpixel and third subpixels contain an LED chip that emits radiation of a first color, wherein a first conversion layer that converts the radiation into a second color is arranged at least above the second subpixels and a second conversion layer that converts the radiation into a third color is arranged above the third subpixels. At least one process step is carried out in which the first or second conversion layer is applied or removed in at least one defined region above the pixels, wherein a portion of the LED chips is electrically operated, and wherein the region is defined by the radiation generated by the operated LED chips, generated heat or a generated electric field.
摘要翻译： 一种方法产生多色LED显示器，该显示器包括具有多个像素的LED发光单元。 第一子像素，第二子像素和第三子像素包含发射第一颜色的辐射的LED芯片，其中将辐射转换成第二颜色的第一转换层布置在第二子像素的至少上方，以及转换辐射的第二转换层 在第三子像素的上方配置第三颜色。 执行至少一个处理步骤，其中在像素上方的至少一个限定区域中施加或去除第一或第二转换层，其中一部分LED芯片是电操作的，并且其中该区域由辐射 由所操作的LED芯片产生的热量或产生的电场。
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公开(公告)号：US09425358B2
公开(公告)日：2016-08-23
申请号：US14428937
申请日：2013-09-12
IPC分类号： H01L33/38 , H01L33/20 , H01L33/48 , H01L33/62 , H01L31/0203 , H01L31/0224 , H01L31/02 , H01L31/0352 , H01L31/18
CPC分类号： H01L33/382 , H01L31/02002 , H01L31/0203 , H01L31/0224 , H01L31/0352 , H01L31/18 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/486 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor body and a carrier, on which the semiconductor body is arranged. The semiconductor body has a semiconductor layer sequence with an active region provided for generating or receiving radiation, a first semiconductor layer and a second semiconductor layer. The active region is arranged between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is arranged on the side of the active region facing away from the carrier. A trench structure extends through the second semiconductor layer and the active region into the first semiconductor layer. An electrical contact structure with a plurality of contact strips is formed between the carrier and the semiconductor body. The contact strips in the trench structure are connected in an electrically conductive manner to the first semiconductor layer.
摘要翻译： 光电子半导体芯片包括半导体本体和载体，半导体本体被布置在该载体上。 半导体本体具有提供用于产生或接收辐射的有源区的半导体层序列，第一半导体层和第二半导体层。 有源区布置在第一半导体层和第二半导体层之间。 第一半导体层布置在有效区域背离载体的一侧。 沟槽结构延伸穿过第二半导体层和有源区进入第一半导体层。 在载体和半导体本体之间形成具有多个接触条的电接触结构。 沟槽结构中的接触条以导电方式连接到第一半导体层。
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44.发明申请公开(公告)号：US20150279903A1
公开(公告)日：2015-10-01
申请号：US14434760
申请日：2013-10-01
CPC分类号： H01L27/156 , H01L25/0753 , H01L33/0062 , H01L33/0079 , H01L33/18 , H01L33/24 , H01L33/385 , H01L2924/0002 , H01L2924/00
摘要： In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands (4) having a semiconductor layer sequence (3) on a growth substrate (2), wherein the islands (4) each comprise at least one active zone (33) of the semiconductor layer sequence (3), and an average diameter of the islands (4), as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 μm inclusive, B) producing a separating layer (5) on a side of the islands (4) facing the growth substrate (2), wherein the separating layer (5) surrounds the islands (4) all around, as viewed in a top view of the growth substrate (2), C) attaching a carrier substrate (6) to a side of the islands (4) facing away from the growth substrate (2), and D) detaching the growth substrate (2) from the islands (4), wherein at least a part of the separating layer (5) is destroyed and/or at least temporarily softened during the detachment.
摘要翻译： 在该方法的至少一个实施例中，所述方法包括以下步骤：A）在生长衬底（2）上产生具有半导体层序列（3）的辐射活性岛（4），其中岛（4）各自包括 半导体层序列（3）的至少一个活性区域（33）和从生长衬底的顶视图观察的岛状物（4）的平均直径为50nm-10μm，包括B， ）在面向生长衬底（2）的岛状物（4）的一侧上产生分离层（5），其中分离层（5）围绕生长的顶视图中的所有岛（4）周围 衬底（2），C）将载体衬底（6）附接到所述岛（4）背离所述生长衬底（2）的一侧，以及D）将所述生长衬底（2）从所述岛（4）上分离， 其中分离层（5）的至少一部分在分离期间被破坏和/或至少暂时软化。
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公开(公告)号：US20150236209A1
公开(公告)日：2015-08-20
申请号：US14428937
申请日：2013-09-12
IPC分类号： H01L33/38 , H01L33/48 , H01L33/62 , H01L31/18 , H01L31/0224 , H01L31/02 , H01L31/0352 , H01L33/20 , H01L31/0203
CPC分类号： H01L33/382 , H01L31/02002 , H01L31/0203 , H01L31/0224 , H01L31/0352 , H01L31/18 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/486 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor body and a carrier, on which the semiconductor body is arranged. The semiconductor body has a semiconductor layer sequence with an active region provided for generating or receiving radiation, a first semiconductor layer and a second semiconductor layer. The active region is arranged between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is arranged on the side of the active region facing away from the carrier. A trench structure, extends through the second semiconductor layer and the active region into the first semiconductor layer. An electrical contact structure with a plurality of contact strips is formed between the carrier and the semiconductor body. The contact strips in the trench structure are connected in an electrically conductive manner to the first semiconductor layer.
摘要翻译： 光电子半导体芯片包括半导体本体和载体，半导体本体被布置在该载体上。 半导体本体具有提供用于产生或接收辐射的有源区的半导体层序列，第一半导体层和第二半导体层。 有源区布置在第一半导体层和第二半导体层之间。 第一半导体层布置在有效区域背离载体的一侧。 沟槽结构延伸穿过第二半导体层和有源区进入第一半导体层。 在载体和半导体本体之间形成具有多个接触条的电接触结构。 沟槽结构中的接触条以导电方式连接到第一半导体层。
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公开(公告)号：US20220393059A1
公开(公告)日：2022-12-08
申请号：US17771368
申请日：2020-10-06
发明人： Korbinian Perzlmaier , Peter Stauß , Alexander F. Pfeuffer , Christoph Klemp , Kerstin Neveling , Andreas Biebersdorf
IPC分类号： H01L33/00 , H01L21/683
摘要： In an embodiment a component composite includes an auxiliary carrier, a plurality of components, a retaining structure and an electrically conductive sacrificial layer, wherein each of the components has a connection layer which faces the sacrificial layer and is electrically conductively connected to the sacrificial layer, wherein the sacrificial layer is arranged in vertical direction between the auxiliary carrier and the components, and wherein the sacrificial layer is to be removable and the components are mechanically connected to the auxiliary carrier only via the retaining structure in addition to the sacrificial layer.
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公开(公告)号：US20220238773A1
公开(公告)日：2022-07-28
申请号：US17609256
申请日：2020-05-06
IPC分类号： H01L33/62 , H01L25/04 , H01L25/075 , H01L31/02 , H01L31/18
摘要： In an embodiment a method for producing a component having a carrier and at least one component part electrically conductively connected to the carrier and mechanically fixed to the carrier by an electrically insulating bonding layer includes providing the carrier having a connection layer, wherein the bonding layer is disposed on the carrier and has at least one opening, wherein a connection surface of the connection layer is exposed, and wherein the bonding layer projects vertically beyond the exposed connection surface or vice versa, applying the component part having a contact layer on the carrier in such that, in top view of the carrier, an exposed contact surface of the contact layer covers the opening and the connection surface located therein, wherein the exposed contact surface is spaced apart from the exposed connection surface by a vertical distance and reducing the vertical distance by changing a volume of the bonding layer such that the exposed contact surface and the exposed connection surface are brought together, such that they are directly adjacent to each other and such that a direct electrical contact is formed between the contact layer and the connection layer.
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48.发明授权公开(公告)号：US10741723B2
公开(公告)日：2020-08-11
申请号：US16317472
申请日：2017-07-13
摘要： A component with an geometrically adapted contact structure and a method for producing such a component are disclosed. In an embodiment a component includes a contact structure including a contiguous contact layer having a plurality of openings and being assigned to a first electrical polarity of the component and a plurality of individual contacts at least in part having different vertical heights, wherein the contacts extend in the openings throughout the contiguous contact layer, wherein the contacts are laterally spaced from each other and assigned to a second electrical polarity of the component, and wherein the contacts are arranged with respect to their different heights and their positions such that a height distribution of the contacts is adapted to a predetermined geometrically non-planar contour profile.
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49.发明授权公开(公告)号：US10516079B2
公开(公告)日：2019-12-24
申请号：US16006765
申请日：2018-06-12
IPC分类号： H01L33/00 , H01L33/08 , H01L27/15 , H01L33/38 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/461 , H01L25/16 , H01L31/12
摘要： A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: A) providing a structured semiconductor layer sequence (21, 22, 23) having a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c), an active layer (23), and a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), B) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that the first contact layer (41) and the second contact layer (42) are electrically separated from each other, and the first contact layer (41) and the second contact layer (42) run parallel to each other.
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50.发明授权公开(公告)号：US10374121B2
公开(公告)日：2019-08-06
申请号：US15774960
申请日：2016-11-09
摘要： An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, a component includes a semiconductor layer sequence including a first main side, a first layer, an active layer, a second layer and a second main side, a first contact element arranged on the second main side filling a recess in the semiconductor layer sequence, wherein the recess extends from the second main side through the second layer and the active layer and opens out into the first layer and a second contact element arranged on the second main side, the second contact element being arranged laterally next to the recess in a plan view of the second main side, wherein the first contact element comprises a first transparent intermediate layer, a metallic first mirror layer and a metallic injection element.
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